• Journal of Sensor Science and Technology
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• v.14 no.3
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• pp.160-168
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.

• Journal of the Korean Magnetics Society
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• v.21 no.3
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• pp.88-92
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• 2011

We grew $Zn_{0.4}Fe_{2.6}O_4$ thin films using Pulsed Laser Deposition and studied their crystal structure and magnetical characteristics as a function of growth temperature ($T_g$). For the film with $T_g=300^{\circ}C$, X-ray reflections from ${\alpha}-Fe_2O_3$ and ZnO were observed. However, when $T_g$ was increased from 300 to $500^{\circ}C$, crystal structure of inverse spinel was stabilized with the crystal orientation of $Zn_{0.4}Fe_{2.6}O_4(111)/Al_2O_3(0001)$ without any detection of ${\alpha}-Fe_2O_3$ and ZnO phases. The surface morphology shows flattening behavior with increasing $T_g$ from 300 to $500^{\circ}C$. These observations indicate that Zn is substituted into tetrahedron A-site of the inverse-spinel $Fe_3O_4$. M-H curves exhibit clear ferromagnetism for the sample with $T_g=500^{\circ}C$ whereas no ferromagnetism is observed for the film with $T_g=300^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.238-246
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• 1996

High-density SiC-AIN solid solutions were fabricated from powder mixtures of $\beta$-SiC and AIN by hot-pressing in the 1870 to $2030^{\circ}C$ temperature range. The reaction of AIN and $\beta$-SiC (3C) powder transformed to the 2 H (wurzite) structure appeared to depend on the temperature and SiC/A1N ratio and seeds present. The crystalline phases consisted of a SiC-rich solid-solution phase and an A1N-rich solid-solution phase. At $2030^{\circ}C$ for 1 h, for a composition of 50 % AIN/50 % SiC with a seeding of $\alpha$-SiC, the complete solid solution could be obtained and the microstructures are equiaxed with a relatively homogeneous grain size of 2 H phases. The variation of the seeding of $\alpha$-SiC in SIC-A1N solid solutions could be attributed to the transformation behaviour and differences in size and shape of the grains, as well as to other factors, such as grain size distributions, compositional inhomogeneity, and structural defects.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.290.2-290.2
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• 2016

Recently, organic thin-film transistors have been widely researched for organic light-emitting diode panels, memory devices, logic circuits for flexible display because of its virtue of mechanical flexibility, low fabrication cost, low process temperature, and large area production. In order to achieve high performance OTFTs, increase in accumulation carrier mobility is a critical factor. Post-fabrication thermal annealing process has been known as one of the methods to achieve this by improving the crystal quality of organic semiconductor materials In this paper, we researched the properties of pentacene films with X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM) analyses as different annealing temperature in N2 ambient. Electrical characterization of the pentacene based thin film transistor was also conducted by transfer length method (TLM) with different annealing temperature in Al- and Ti-pentacene junctions to confirm the Fermi level pinning phenomenon. For Al- and Ti-pentacene junctions, is was found that as the surface quality of the pentacene films changed as annealing temperature increased, the hole-barrier height (h-BH) that were controlled by Fermi level pinning were effectively reduced.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.5
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• pp.242-242
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• 2004

The composites were fabricated 61 vol.%α-α-SiC and 39vol.% WC powders with the liquid forming additives of 12wt% Al₂O₃＋Y₂O₃ by pressureless annealing at 1700, 1800, 1900℃ for 4 hours. The result of phase analysis of composites by XRD revealed α-SiC(2H), WC, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density, the flexural strength, fracture toughness and Young′s modulus showed respectively the highest value of 99.4%, 375.76㎫, 5.79㎫ㆍ$m^{\frac{1}{2}}$, and 106.43㎬ for composite by pressureless annealing temperature 1900℃ at room temperature. The electrical resistivity showed the lowest value of 1.47×$10^{-3}$/Ω·㎝ for composite by pressureless annealing temperature 1900℃ at 25℃. The electrical resistivity of the α-SiC-WC composites was all positive temperature cofficient resistance (PTCR) in the temperature ranges from 25℃ to 500℃.

• Analytical Science and Technology
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• v.21 no.3
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• pp.229-236
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• 2008

$C/TiO_2$ composites were prepared with surface modified MWCNT sequentially after HCl treatment and TNB as titanium source. There is a single crystal structure which is anatase in all of the samples from the data of XRD. The SEM microphotographs of $C/TiO_2$ composites show that the $TiO_2$ particles were well mixed with the CNT. There are C, O and Al with strong Ti peaks in all samples from EDX results, and it also shows that the sample CT has much more amount of C and Ti content than that of sample HCT. Finally, the photocatalytic activities for the $C/TiO_2$ composites have more effective than that of pristine $TiO_2$.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.47-50
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• 2010

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, $4.13\times10^{-4}\Omega{\cdot}cm^{-1}$ was found in 750 nm films with an electron mobility $(\mu)$ of $10.6 cm^2V^{-1} s^{-1}$ and a carrier concentration (n) of $1.42\times10^{21} cm^{-3}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.232-232
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• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.428-436
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• 1997

Hexacelsian ($BaO{\cdot}Al_2O_3{\cdot}2SiO_2$) powder was prepared by a solution-polymerization route employing PVA solution as a polymeric carrier. A fine amorphous-type hexacelsian powder with an average particle size of 0.8 $\mu \textrm{m}$ and a BET specific surface area of $63 \textrm{m}^2$/g was made by a ball-milling the powder precursor for 12 h after calcination at $800^{\circ}C$ for :1 h. A densified hexacelsian was obtained through sintering at $1550^{\circ}C$ for 2 h under an air atmosphere. The $\alpha\longleftrightarrow\beta$ and $\beta\longleftrightarrow\gamma$ displacive phase transformation in polycrystalline hexacelsia,n was examined by using dilatometry and differential scanning calorimtry. The reconstructive transformation between hexacelsian and celsian was obtained by annealing at $1600^{\circ}C$ for 72h. Volume contraction of 5.6% was accompanied by the reconstructive transformation.

• Journal of the Speleological Society of Korea
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• v.45 no.46
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• pp.9-31
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• 1996

The Mt. Peakdu is situated in north of the main peninsula, commanding geographically coordinated between longitude W($127^{\circ}$ 15' - $128^{\circ}$ 00') to E($128^{\circ}$ 15'- $129^{\circ}$ 00'), between latitude from S($41^{\circ}$ 15'- $42^{\circ}$ 00') to N($42^{\circ}$ 10'- $42^{\circ}$ 40'). The Manjyang-Gul in Cheju volcanic island is situated in the south of the main peninsula, commanding the Korean Strait, geographically coordinated longitude N($33^{\circ}$ 32' 26") and E($126^{\circ}$ 46' 48"). The quantitative analysis using XRF of volcanic rock samples for the north of Lu- Ming- Feng in Mt. Peakdu Group and the Manjang-Gul in Cheju island was Performed. The major chemical components by group analysis are as follows; Peakdu-Mt. Cheju Peakdu-Mt. Cheju (1) $Na_2O$(3.29Wt% and 3.27Wt%) (2) MgO (3.95Wt% and 6.l5Wt%) (3) $Al_2O_3$((17.64Wt% and 15.l7Wt%) (4) $SiO_2$((50.62Wt% and 50.99Wt%) (5) $P_2O_5$ (0.36Wt% and 0.30Wt%) (6) $K_2O$ (1.37Wt% and 1.04Wt%) (7) CaO (8.56Wt% and 8.06Wt%) (8) $TiO_2$ (2.37Wt% and 2.l5Wt%) (9) MnO (0.llWt% and 0.l6Wt%) (10) $Fe_2O_3$(9.l2Wt% and 12.56Wt%) The Group analysis data were compared in the relation within the age of formation for $0.16{\pm}0.08Ma$ in Mt. Peakdu Group, and $0.42{\pm}42Ma$ or $0.42{\pm}42Ma$ in Cheju island for K-Ar age. The crystal structure are mixed crystal of monoclinic, hexagonal and triclinic system in Mt. Peakdu Group and mixed structure of triclinic and cubic system in Cheju volcanic island.ic island.