• 연구논문집
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• 통권26호
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• pp.103-112
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• 1996

$Al_2O_3/SiC$ Hybrid-Composite이 일반적인 분말공정에 의하여 제조되었다. 소결시 $\gamma-Al_2O_3에서 $\alpha-Al_2O_3$로의 전이에 seed역할을 하는 $\alpha-Al_2O_3의 첨가는 균일한 미세구조를 발달시켜 강도의 증진을 가져왔다. nano size의 SiC의 첨가는 $Al_2O_3$의 소결성과 입성장에 영향을 미쳐 파괴강도의 증진을 가져왔다. $Al_2O_3/SiC$ nano-Composite에 SiC plates의 첨가는 파괴강도의 감소를 가져왔지만, 상대적으로 파괴인성은 증진되었다. SiC plates에 nitride (BN, $Si_3N_4$ 코팅을 할 경우 crack deflection을 더욱 유발하여 파괴인성이 증진되었다.

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2003년도 춘계총회 및 학술발표회
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• pp.45-45
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• 2003

• 한국세라믹학회지
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• 제53권6호
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• pp.635-640
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• 2016

Electrical behavior of AlN ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to additional $TiO_2$ dopant. From the impedance spectroscopy, it was found that the grain and grain boundary conductivities have greatly decreased with addition of $TiO_2$ dopant. The $TiO_2$ dopant also increased the activation energy of the grain conductivity by about 0.37 eV; this increase was attributed to the formation of an associate between Al vacancies and Ti ions at the Al sites. Similarly, the electronic conductivity was reduced by $TiO_2$ addition. However, $TiO_2$ solubility in AlN grains was below the detection limit of typical EDX analysis. Grain boundary was clean, without liquid films, but did show yttrium segregation. The transference number of ions was close to 1, showing that AlN is a predominantly ionic conductor. Based on the observed results, the implications of using AlN applications as insulators have been discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1925-1927
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• 1999

At the study, it has fabricated Al/AlN/GaAs MIS capacitor using DC reactive sputtering method. To applicate GaAs semiconductor in a MIS devices, investigated capability of AIN thin film by the insulator layer. Also it has investigated inversion of C-V characteristics by addition of the hydrogen(hydrogen concentration: 5%) and it has investigated that leakage current has $10^{-8}A/cm^2$ for 1 MV/cm breakdown electric field of I-V characteristics.

• 한국표면공학회지
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• 제36권6호
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• pp.480-490
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• 2003

Effects of plasma-nitriding on the pitting corrosion of Fe-30at%Al-5at%Cr alloy containing Ti, Hf, and Zr were investigated using potentiostat in 0.1M HCl. The specimen was casted by the vacuum arc melting. The subsequent homogenization was carried out in Ar gas atmosphere at $1000^{\circ}C$ for 7days and phase stabilizing heat treatment was carried out in Ar gas atmosphere at $500^{\circ}C$ for 5 days. The specimen was nitrided in the $N_2$, and $H_2$, (1:1) mixed gas of $10^{-4}$ torr at $480^{\circ}C$ for 10 hrs. After the corrosion tests, the surface of the tested specimens were observed by the optical microscopy and scanning electron microscopy(SEM). For Fe-30at%Al-5Cr alloy, the addition of Hf has equi-axied structure and addition of Zr showed dendritic structure. For Fe-30at%Al-5Cr alloy containing Ti, plasma nitriding proved beneficial to decrease the pitting corrosion attack by increasing pitting potential due to formation of TiN film. Addition of Hf and Zr resulted in a higher activation current density and also a lower pitting potential. These results indicated the role of dendritic structure in decreasing the pitting corrosion resistance of Fe-30Al-5Cr alloy. Ti addition to Fe-30Al-5Cr decreased the number and size of pits. In the case of Zr and Hf addition, the pits nucleated remarkably at dendritic branches.

• 한국재료학회지
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• 제17권10호
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• pp.560-566
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• 2007

AlN plates were fabricated by hot pressing at $1700-1900^{\circ}C$ using yttria and alumina (3 and $10\;{\mu}m$ particle size) powders as additives and characterized: density, thermal conductivity, transverse rupture strength, and grain size measurement by SEM and EDS. Density values of $3.31-3.34\;g/cm^3$ are largely attributed to hot pressing of powder mixtures in carbon mold under $N_2$ atmosphere which caused effective degree of oxygen removal from yttrium-aluminate phase expected to form at $1100^{\circ}C$. The grain size of hot pressed AlN was almost homogeneous, with size approximately from 3.2 to $4.0\;{\mu}m$ after hot pressing. $Al_2O_3$ powder of $3\;{\mu}m$ particle size resulted in better transverse rupture strength and finer grain size compared to $10\;{\mu}m$ $Al_2O_3$ powder. The thermal conductivity of AlN ranged between $83-92.7\;W/m{\cdot}K$ and decreased with $Al_2O_3$ addition. Fine grain size is preferred for better mechanical properties and thermal conductivity.

• 한국세라믹학회지
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• 제27권8호
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• pp.956-956
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• 1990

석탄회의 탄소가 첨가된 질화반응시에 생성된 AIN, SiC 그리고 Si3N4 등의 생성물 분포를 반응온도, 시간 그리고 탄소의 첨가량에 따라 검토하였다. AIN의 조성은 시료입자가 작을수록 증가하였으며 반응온도 14500~1500℃와 약 2시간의 반응시간 그리고 약 30%의 탄소 첨가량 (시료무게 기준) 에서 최대값을 나타내었다. SiC와 Si3N4 조성변화는 서로 상반된 경향을 보였으며 반응온도가 낮고 반응시간이 작으며 그리고 탄소첨가량이 증가할 수록 SiC의 조성은 Si3N4 에 비하여 크게 나타났다.

• 센서학회지
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• 제25권5호
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• pp.320-325
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• 2016

In this paper, we propose an AlGaN/GaN-based extended-gate metal-insulator-semiconductor high electron mobility transistor (MISHEMT)-type biosensor for detecting streptavidin-biotin complexes. We measure the drain current of the fabricated sensor, which varies depending on the antibody-antigen reaction of streptavidin with biotin molecules. To confirm the immobilization of biotin polyethylene glycol (PEG) thiol, we analyze the Au surface of a GaN sample using X-ray photoelectron spectroscopy (XPS). The proposed biosensor shows higher sensitivity than Si-based extended-gate metal oxide semiconductor field effect transistor (MOSFET)-type biosensor. In addition, the proposed AlGaN/GaN-based extended-gate MISHEMT-type biosensor exhibits better long-term stability, compared to the conventional AlGaN/GaN-based MISHEMT-type biosensor.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.33-35
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• 2011

Films of CrAlN and CrZrN were deposited on a steel substrate by closed field unbalanced magnetron sputtering, and their oxidation behaviors were investigated. CrAlN films consisted of dense, polycrystalline CrN and AlN fine columns. The formed oxides consisted primarily of crystalline $Cr_2O_3$ incorporated with $Al_2O_3$. The oxide layers were thin and compact so as to make CrAlN films more protective than CrN films. In case of CrZrN films, Zr atoms were dissolved in the CrN phase. Zr atoms advantageously refined the columnar structure, reduced the surface roughness, and increased the micro-hardness. However, the addition of Zr did not increased oxidation resistance, mainly because Zr was not a protective element. All the deposited films displayed relatively good oxidation resistance, owing to the formation of the highly protective $Cr_2O_3$ on their surface. The $Cr_{40}Zr_9N$ and $Cr_{31}Zr_{16}N$ films oxidized to $Cr_2O_3$ as the major phase and ${\alpha}-ZrO_2$ as the minor one, whereas the CrN film oxidized to $Cr_2O_3$.

• 한국전기전자재료학회논문지
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• 제25권11호
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• pp.862-866
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• 2012

Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.