• Electrical & Electronic Materials
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• v.12 no.8
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• pp.39-45
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• 1999

Comparative photoresponsive current-volt-age characteristics of n-channel PHEMT and MESFET on GaAs substrate. with (W/L)=200${\mu}{\textrm}{m}$/1${\mu}{\textrm}{m}$ of gates, are reported as a function of electro-optical stimulation (P\ulcorner, λ=830nm) for the first time as far as we know. Significantly different photoresponses are observed in MESFET and PHEMT, mainly due to different optoelectronic mechanisms in the formation and current conduction of channel carriers. Under high optical power, high photoresponsity with a strong non-linearity with P\ulcorner, predominantly due to a parallel conduction via a heavily doped Al\ulcornerGa\ulcornerAs donor layer, was observed in PHEMT while the optically induced drain current has been very small but monotonically increasing with optical stimulation in GaAs MESFET. We also investigated differences in optically stimulated gate leakage currents and photonic gate responses on gate voltage and drain voltage as a function of P\ulcorner. Based on the drain and gate responses to electro-optical stimulation. PHEMTs are expected to be a better candidate for high performance photonically responsive microwave device compared with MESFETs.

• Korean Journal of Materials Research
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• v.23 no.12
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• pp.714-721
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• 2013

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

• Journal of Powder Materials
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• v.21 no.3
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• pp.202-206
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• 2014

Leaching of MOCVD dust in the LED industry is an essential stage for hydro-metallurgical recovery of pure Ga and In. To recover Ga and In, the leaching behavior of MOCVD scrap of an LED, which contains significant amounts of Ga, In, Al and Fe in various phases, has been investigated. The leaching process must be performed effectively to maximize recovery of Ga and In metals using the most efficient lixiviant. Crystalline structure and metallic composition of the raw MOCVD dust were analyzed prior to digestion. Subsequently, various mineral acids were tested to comprehensively study and optimize the leaching parameters such as acidity, pulp density, temperature and time. The most effective leaching of Ga and In was observed for a boiling 4 M HCl solution vigorously stirred at 400 rpm. Phase transformation of GaN into gallium oxide by heat treatment also improved the leaching efficiency of Ga. Subsequently high purity Ga and In can be recovered by series of hydro processes.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.201-206
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• 2002

Pd/Si/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved at $400^{\circ}C$/20sec. This was related to the formation of Pd-Si compounds by rapid thermal annealing and the in-diffusion of Si atoms to InGaAs surface. However, the specific contact resistivity increased slightly to low-$10^{-6}\Omega \textrm{cm}^2$ at $400^{\circ}C$ for longer than 30 seconds, and to high-$10^{-7}$ at 425~$450^{\circ}C$ for 10 seconds. This resulted from the formation of Pd-Ga compounds. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained after annealing at high temperature. Therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.324-329
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• 2018

Red phosphor in glasses (PiGs) for automotive light-emitting diode (LED) applications were fabricated with 620-nm $CaAlSiN_3:Eu^{2+}$ phosphor and Pb-free silicate glass. PiGs were synthesized and mounted on high-power blue LED to make a monochromatic red LED. PiGs were simple mixtures of red phosphor and transparent glass powder. After being fabricated with uniaxial press and CIP at 300 MPa for 20 min, the green bodies were thermally treated at $550^{\circ}C$ for 30 min to produce high dense PiGs. As the phosphor content increased, the density of the sintered body decreased and PiGs containing 30% phosphor had a full sintered density. Changes in photoluminescence spectra and color coordination were studied by varying the thickness of plates that were mounted after optical polishing. As a result of the optical spectrum and color coordinates, PiG plate with $210{\mu}m$ thickness showed a color purity of 99.7%. In order to evaluate the thermal stability, the thermal quenching characteristics were measured at temperatures of $30{\sim}150^{\circ}C$. The results showed that the red PIG plates were 30% more thermally stable compared to the AlGaInP red chip.

• Journal of Magnetics
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• v.16 no.4
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• pp.332-336
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• 2011

We studied the effect on the electronic and magnetic properties of the N defect in clean and Cu-doped wurtzite III-nitrides by using the first-principles calculations. When it is doped two Cu atoms in the nearest neighboring sites, the system of AlN, GaN, or InN with the N vacancy is energetically more favorable than that without the N vacancy site. When the Cu concentration increases, the total magnetic moment of a supercell becomes small. The ferromagnetism of Cu atom is very low due to the weak 3d-3d coupling. It is noticeable that the spin-exchange interaction between the Cu-3d and N defect states is important.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.75-75
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• 1999

100nm 공간 분해능을 갖는 NSOM 장치를 자체 제작하고 computer를 이용하여 측정을 자동화 하였다. 압전소자의 인가된 전압에 대한 이동거리를 x, y, z 축에 따라 측정 및 보정하고 NSOM topography 사진을 얻는데 성공하였다. 이때 이동거리는 x, y 축은 약 20nm/V이고, z 축은 2.5nm/V 이었다. 하지만 압전소자의 인가된 전압에 따른 이동거리의 비선형성에 대한 보정 및 feedback 제어의 안정화 등은 앞으로 해결해야할 문제로 남아 있다. 자체제작된 NSOM을 이용하여 GaAs/AlGaAs MQWs와 InAs/GaAs QDs 시료에 대한 PL, photocurrent 및 reflectance 등 분광 실험을 성공적으로 수행하였다. PL 실험의 경우 첨예한 광 섬유에 보내진 레이저 광의 세기가 매우 미약하기 (수십 nW) 때문에 탐침 크기가 약 500nm 일 때 측정되었다. 하지만 photocurrent 실험에서는 시료를 검출기로 사용하기 때문에 신호대 잡음비가 PL에 비하여 100배 이상 좋아지는 것을 발견하였다. 따라서 NSOM을 이용한 photocurrent 방법은 앞으로 NSOM의 공간 분해능을 높이는데 하나의 돌파구를 마련해 줄 것으로 기대된다.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.17-20
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• 2000

We have enhanced the yield of 0.25 ${\mu}{\textrm}{m}$ T-gate $Al_{0.25}$G $a_{0.75}$As/I $n_{0.2}$G $a_{0.8}$As P-HEMT using three-layer E-beam lithography process and selective etching process. The three-layer resist structure (PMMA/copolymer/ PMMA=2000 $\AA$/3000 $\AA$/2000 $\AA$) and three developers (Benzene：IPA=1：1,Methanol：IPA =1：1,MIBK：IPA=1：3) were used for fabrication of a wide-head T-gate by the conventional double E-beam exposure technology. Also 1 wt% citric acid： $H_2O$$_2$：N $H_{4}$OH(200m1：4ml：2.2ml) solution were used for uniform gate recess. The etching selectivity of GaAs over $Al_{0.25}$G $a_{0.75}$As is measured to be 80. So these P-HEMT processes can be used in X-band MMIC LNA fabrication.ion.ion.ion.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.591-593
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• 2008

In this report, cerium doped lutetium aluminate ($Lu_3Al_5O_{12}$:Ce) phosphor has been synthesized by the solid state method under reduction atmosphere with mixture gas. The prepared phosphor shows a main luminescent peak at 555nm. Consequently, this phosphor is possible to be applicable to white LED lamp by InGaN chips.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.41.2-41.2
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• 2011

Display 산업의 확대로 인해 광학적 특성 및 전기적 특성이 우수한 TCO (Transparent conductive oxide) 연구가 활발히 진행되고 있다. 기존에는 ITO가 대부분의 분야에서 이용되었지만 In의 경제적인 단점으로 인해 새로운 대체물로써 ZnO가 떠오르고 있다. ZnO는 전형적인 n-type 반도체이며, wide band gap 물질로써 Al, Ga, B과 같은 3 족 원소를 doping 함으로써 광학적 및 전기적 특성을 향상시킬 수 있다. 최근에는 ZnO의 이온반경과 비슷한 Ga을 도핑한 Ga-doped ZnO 박막에 대한 연구가 활발히 진행되고 있다. 이는 ZnO에 Ga을 도핑함으로써 격자결함을 최소화 시키고 carrier concentration 및 hall mobility를 향상시켜 전기전도도의 향상을 이루기 때문이다. 본 연구에서는 $Ga_2O_3$이 3wt% doping 된 ZnO rotating cylindrical target 을 DC magnetron sputtering 을 이용하여 2 kW의 파워와 70 kHz의 주파수를 고정하고, 증착 온도를 변화시켜 유리 기판 위에 Ga-doped ZnO 박막을 증착 하였다. 증착 시 온도가 Ga-doped ZnO 박막에 미치는 영향을 관찰하기 위해 박막 표면의 조성을 분석하였고, 결정성 및 전기적 특성의 변화를 통해 박막의 특성을 비교 평가하였다. Ga-doped ZnO 박막의 표면과 두께는 SEM (Scanning electron microscope) 분석을 통해 관찰하였고, XRD (X-ray diffractometer) 를 이용하여 결정학적 특성을 확인하였다. 또한 Van der Pauw 방법을 이용한 hall 측정을 통해 resistivity, carrier concentration, hall mobility를 분석하였고, UV-Vis를 이용하여 박막의 투과율을 분석하였으며, 이를 토대로 투명 전도막으로써 Ga-doped ZnO 박막의 응용 가능성을 평가하였다.