• Journal of Powder Materials
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• v.11 no.3
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• pp.259-264
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• 2004

Aluminum based metal matrix composite reinforced with SiC particles was fabricated by the powder-in sheath rolling method. A stainless steel tube with outer diameter of 12 mm and wall thickness of 1mm was used as a sheath. Mixture of aluminum powder and SiC particles of which volume content was varied from 5 to 20vol.% was filled in the tube by tap filling and then rolled to 75% reduction at ambient temperature. The rolled specimen was sintered at 56$0^{\circ}C$ for 0.5hr. The tensile strength of the (SiC)$_{p}$/Al composite increased with the volume content of SiC particles, and at 20vol.% it reached a maximum of 100㎫ which is 1.6 times higher than unreinforced material. The elongation decreased with the volume content of $Al_{2}$O$_{3}$ particles. The mechanical properties of the (SiC)$_{p}$/Al composite fabricated by the powder-in sheath rolling is compared with that of (Al$_{2}$O$_{3}$)$_{p}$/Al composite by the same process.ess.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.158-158
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• 2009

• Journal of Integrative Natural Science
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• v.2 no.4
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• pp.233-236
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• 2009

This study was undertaken to measure the electrochemical corrosion of amorphous $Zr_{65}Al_8Ni_{15}Cu_{12}$ (at.%) alloy ribbon under various conditions, including 0.4 mM HCl solution, and for various values of the pH and the immersion time. The corrosion potentials($E_{corr}$) for the amorphous $Zr_{65}Al_8Ni_{15}Cu_{12}$ alloy in 0.4 mM HCl decreased with increasing temperature; the corrosion current density($I_{corr}$) increased with increasing temperature in general. The polarization resistance($R_p$) was inversely proportional to the corrosion rate. While pH=7, 9, 11 was not as sensitive as pH=3, 5, pH=3 was more sensitive for amorphous $Zr_{65}Al_8Ni_{15}Cu_{12}$ alloy than other pHs specially. The change of mass in the 70 mM $H_2SO_4$ solution with immersion time was the greatest in the first 100 h.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.25-28
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• 2001

In this paper, we have investigated the effects of gas flow rate, rf power, process pressure and Ar addition on reactive ion etching of InP, InGaAs and InAlAs using Sic14 and Cl$_2$ gases. The etch rates were measured by using a surface profiler. The etched profiles, sidewall roughness, and surface morphology were observed by scanning electron microscopy and by atomic force microscopy. The selective etching of InGaAs to InP and InAlAs was studied by varying the etching parameters. It was found that Cl$_2$ gas is more efficient for the selective etching of InGaAs to InAlAs than SiCl$_4$ gas. The etch selectivity of InGaAs to InAlAs is strongly dependent on the rf power and the process pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.46-47
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• 2005

이번 연구는 $BCl_3/CF_4$ 플라즈마를 사용하여 반도체소자 제조 시 널리 이용되는 GaAs 계열반도체 중 대표적인 재료인 GaAs/AlGaAs 및 GaAs/InGaP 구조를 선택적으로 건식 식각한 후 분석한 것이다. 공정변수로는 ICP 소스파워를 0-500W, RIE 파워를 0-50W 그리고 $BCl_3/CF_4$ 가스 혼합비를 중점적으로 변화시켰다. $BCl_3$ 플라즈마만을 사용한 경우 (20$BCl_3$, 20W RIE power, 300W ICP source power, 7.5mTorr) 는 GaAs:AlGaAs의 선택비가 0.5:1 이었으며 이때 GaAs의 식각률은 ~2200${\AA}/min$ 이었으며 AlGaAs의 식각률은 ~4500${\AA}/min$ 이었다. 식각 후 표면의 RMS roughness은 < 2nm로 깨끗한 결과를 보여주었다. 15% $CF_4$ 가스가 혼합된 $17BCl_3/3CF_4$, 20W RIE power, 300W ICP source power, 7.5mTorr의 조건에서 3분 동안 공정한 결과 순수한 $BCl_3$ 플라즈마만을 사용한 경우보다 표면은 다소 거칠었지만 (RMS roughness: ~8.4) GaAs의 식각률 (~980nm/min)과 AlGaAs와 InGaP에 대한 GaAs의 선택도 (GaAs:AlGaAs=16:1, GaAs:InGaP=38:1)는 크게 증가하였다. 그리고 AlGaAs 및 InGaP의 경우 식각 시 나타난 휘발성이 낮은 식각 부산물 ($AlF_3:1300^{\circ}C$, $InF_3:1200^{\circ}C$)로 인하여 50nm/min 이하의 낮은 식각률을 보였고, 62.5%의 $CF_4$가 혼합된 $7.5BCl_3/12.5CF_4$플라즈마의 조건에서는 AlGaAs 및 InGaP에 대한 GaAs의 선택도가 각각 280:1, 250:1을 나타내었다.

• The Korean Journal of Ecology
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• v.15 no.2
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• pp.157-172
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• 1992

Studies were conducted to evaluate the differential al tolerance of suwon 205 and olmil wheats grown is nutrient solution and determine the impact of NH4+-N or Ca2+ nutrition of the response of the two wheat vareties to al. In various concentrations of al, olmil induced lower ph levels than suwon 205 in nutrient solutions and the reduction of root length and dry weight was greater in olmil than in suwon 205. The uptake of al was greater in root than in shoot of the two wheat varieties, but more increased in root of olimil. also the uptake of ca, mg, k and p was inhibited by al especialy decrease of ca and p uptake in roots of olmil was more pronounced than in those of suwon 205. In nutrient solutions that contained NH4+-N plus 9ppm al, the ability of both varienties to raise the ph was reduced as the level of NH4+-N in nutrient solutions was increased, and al-sensitive olimil induced lower ph than did al-tolerant suwon 205. al toxicity was intensified by increasing the concentration of NH4+-N in nurient and toxic effect was greater in olmil. al toxicity in the two wheat varieties was steadily increased as the ca level of nutrient solution was reduced, sepecialy this effect was stronger in al-sensitive olmil than in al-tolerant suwon 205.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.525-526
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• 2009

we investigated the effect of rapid thermal annealing (RTA) temperature on photoluminescence (PL) of 635 nm InGaP/InGaAlP multiple quantum well structure. RTA is performed with the quantum well structure with 5.5 nm of well width. The highest PL peak intensity is shown at 1 min. of RTA at $720^{\circ}C$ sample as 3 times higher as compared to the as-grown sample. The effect may be assigned to an expected reduction in number of nonradiative recombination centers in the quantum well.

• Journal of Environmental Science International
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• v.17 no.2
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• pp.233-237
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• 2008

The objective of this study was conducted to evaluate the effects of poultry litter amendments on pH and soluble reactive phosphorus (SRP) in poultry litter. Two laboratory studies were conducted for 42 d in Exp. 1 and for 10 d in Exp. 2, respectively. The poultry litter was treated with various amendments which included 4 g fly ash and 4 g $AlCl_3\;(AlCl_36H_2O)/100g$ litter in Exp. 1 and 4 g alum$(Al_2(SO_4){_3}\;14H_2O)$, 8 g alum, 8.66 g liquid alum, and 17.3 g liquid alum/100 g litter in Exp. 2; untreated litter served as controls. There were no differences in pH between control and T1(4 g fly ash) and SRP contents between T1(4 g fly ash) and T2(4 g $AlCl_3$) in Exp. 1. A significant difference in pH and SRP contents in Exp. 2 was observed among all treatments(P< 0.05). In experiment 1, T1(4 g fly ash) and T2(4 g $AlCl_3$) at 42 d decreased SRP in litter by 47.1% and 62.6% of that from litter alone, respectively. In experiment 2, T1(4 g alum), T2(8.66 g liquid alum), T3(8 g alum), and T4(17.3 g liquid alum) treatments at 10 days reduced SRP contents by up to 36.2%, 62.9%, 87.0%, and 83.9%, respectively, when compared with the controls. Decrease in SRP contents was chiefly associated with reduction in litter pH. These results indicate that use of various litter amendments to limit P solubility has potential and should be pursued as a means of reducing soluble reative phosphorus during short term.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.431-435
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• 2009

The apparatus has been fabricated using the laser diode and microprocessor unit. The apparatus used a InGaAlP laser diode for laser medical therapy and was designed for a pulse width modulation type to increase stimulation effects. To raise the stimulus effect of the human body, the optical irradiation frequency could be set up. The study has executed in-vivo experiment by employing our own developed laser diode irradiation system to investigate the effects of the InGaAlP laser diode irradiation on the wound healing as a preliminary study aimed at the application of InGaAlP laser diode to wound healing of human skin injury. The study cut out whole skin layers of Sprague-Dawley rat on the back part in 1 cm circle and observed developing effects after executing light irradiation for 9 days, and in result it is found that the light irradiation rat showed earlier wound healing than non-irradiation rat during the experimental period. In addition, there are some differences found regarding the healing process between laser diode irradiated rats and non-irradiated ones.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.