• Title/Summary/Keyword: Al-Ti-Si-N

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TiAl-N 코팅의 내식성에 미치는 4원계 원소 영향에 관한 연구

  • Jeong, Deok-Hyeong;Lee, Seon-Yeong;Sin, Seung-Yong;Mun, Gyeong-Il
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.396-396
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    • 2012
  • 산업 분야에서 TiN, CrN, CrAl-N, TiAl-N과 같은 Hard 코팅들은 기계적 특성이 우수하여 절삭 공구, 기계 부품분야에서 많이 사용되고 있다. 최근 연구 동향을 살펴보면 기존에 하나 또는 두가지 합금상태의 Hard 코팅을 넘어서 제3원소, 제4원소를 첨가하여 미세 구조적 변화를 통해 기존의 우수한 특성에 고온안정성, 내식성, 내산화성 등 다양한 기능성을 부여하는 다기능성 연구가 활발히 진행 중이다. 본 연구에서는 마그네트론 스퍼터를 이용하여 고경도 코팅인 Ti-Al계열에 Si, Cu, Cr, B을 첨가함에 따른 내식특성을 확인해보았다. 성분이 균일한 코팅을 만들기 위해 Ti-Al, Ti-Al-Si, Ti-Al-Cu, Ti-Al-Cr, Ti-Al-B 단일합금타겟을 제조하여 실험을 진행하였다. 기본 물성을 확인하기 위해 경도 측정과 SEM XRD 등을 분석하였다. 내식성 평가는 동전위 테스트와 염수분무 테스트를 진행하였고 전해질은 염수와 동일한 5%-NaCl로 진행하였다. 그 결과 Ti-Al-Cr이 내식성에 강한 것으로 나타났고 염수분무 실험에서도 1200시간 이상 지속되는 성과를 보였다.

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Electrical Characteristics of $TiSi_2$ Salicide Contact ($TiSi_2$ SALICIDE CONTACT의 전기적 특성)

  • Lee, Cheol-Jin;Yang, Ji-Woon;Lee, Nae-In;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • 1991.07a
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    • pp.178-182
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    • 1991
  • Contact resistance and contact leakage current of the $Al/TiSi_2/Si$ system are investigated for $N^+\;and\;P^+$ junctions. Titanium disilicide is one of the most common silicides because of its thermal stability, ability, to form selective formation and low resistivity. In this paper, the effect of RTA temperature and Junction implant dose are characterized. The $TiSi_2$ contact resistance to $N^+$ silicon is lower than that of Al to $N^+$ silicon, but $TiSi_2$ of contact resistance to $P^+$ silicon is higher than that of Al to $P^+$ silicon. The $TiSi_2$ of contact leakage current to $N^+\;and\;P^+$ silicon is similar to that of Al contact.

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Electrical Characteristics of Ti Self-Aligned Silicide Contact (Ti Self-Aligned Silicide를 이용한 Contact에서의 전기적 특성)

  • 이철진;허윤종;성영권
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.2
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    • pp.170-177
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    • 1992
  • Contact resistance and contact leakage current of the Al/TiSiS12T/Si system are investigated for NS0+T and PS0+T junctions. SALICIDE (Self Aligned Silicide) process was used to make the Al/TiSiS12T/Si system. Titanium disilicide is one of the most common silicides because of its thermal stability, ability to form selective formation and low resistivity. In this paper, RTA temperature effect and Junction implant dose effect were evaluated to characterize contact resistance and contact leakage current. The TiSiS12T contact resistance to NS0+T silicon is lower than that to PS0+T silicon, and TiSiS12T of contact leakage current to NS0+T silicon is lower than that to PS0+T silicon. Contact resistance and contact leakage current of the Al/TiSiS12T/Si system by this method were possible for VLSI application.

The Study on the properties of CrTiAlN Thin Films with Si Contents Variation by Cathodic Arc Ion Plating (아크이온플레이팅법에 의한 CrTiAlSiN 박막의 Si 함량 변화에 따른 특성 연구)

  • Jo, Yong-Gi;Yu, Gwang-Chun;Jeong, Dong-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.110-110
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    • 2012
  • 아크이온플레이팅법과 스퍼터링법을 이용하여 금형의 보호코팅으로서 CrTiAlSiN 박막을 합성하였다. 연구는 CrTiAlN 피막에 Si이 첨가됨에 따른 농도변화가 피막의 경도 및 내열성에 미치는 영향을 조사하였다. Si 함유량 변화에 따른 특성의 변화에 대해 XRD, TGA, 경도분석, 윤활성의 분석을 통해 조사하였으며, 함성된 피막은 기존 CrN 박막 대비 내열성이 우수하게 향상되었으며 경도의 향상과 낮은 윤활성을 보였다.

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Development of Al plasma assisted chemical vapor deposition using DMEAA (DMEAA를 이용한 알루미늄 PACVD법의 개발)

  • 김동찬;김병윤;이병일;김동환;주승기
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.10
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    • pp.98-106
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    • 1996
  • A thin film of aluminum for ultra large scale integrated circuits metalization has been deposited on TiN and SiO$_{2}$ substrates by plasma assisted chemical vapor deposition using DMEAA (dimenthylethylamine alane) as a precursor. The effects of plasma on surface topology and growth characteristics were investigated. Thermal CVD Al could not be got continuous films on insulating subsrate such as SiO$_{2}$. However, it was found that Al films could be deposited on SiO$_{2}$ substate without any pretreatments by the hydrogen plasma for pyrolysis of DMEAA. Compared to the thermal CVD, PACVD films showed much better reflectance and resistance on TiN and SiO$_{2}$ substrate. We obtained mirror-like PACVD Al film of 90% reflectance and resistance on TiN and SiO$_{2}$ substrates. We obtained mirror-like PACVD Al film of 90% reflectance on TiN substrate. Excellent conformal step coverage was obtained on submicron contact holes ;by the PACVD blanket deposition.

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Microstructural Characterization of TiCrAlSiN Thin Films Deposited with Various Bias Voltages (Bias voltgae에 따른 TiCrAlSiN 코팅막의 미세구조 분석)

  • Lee, Jae-Uk;Lee, Jeong-Yong;Vinh, P.V.;Kim, Seon-Gyu
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2007.04a
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    • pp.122-123
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    • 2007
  • Bias voltage를 달리하여 cathodic arc plasma 방법으로 Si 기판 위에 성장시킨 TiCrAlSiN 코팅막의 미세구조를 투과전자현미경으로 관찰하였다. -200 V에서 0 V로 bias voltage가 변화함에 따라 'nano-multilayered' 구조가 무너지면서 '주상형(columnar)'구조로 코팅막의 미세구조가 변함을 알 수 있었고, EDS line scan을 통해 multilayer의 화학적 조성 변화를 확인하였다.

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The R-V Characteristics of $SiO_2 $ & $SiO_2/TiN$ Thin Film Fabricated by RF Sputtering (RF Sputtering으로 제작한 $SiO_2 $$SiO_2/TiN$ 박막의 R-V 특성)

  • 김창석;하충기;김병인
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.10
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    • pp.826-832
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    • 1998
  • In this study the thin films with the structure of Si+SiO$_2$+TiN are made by RF supttering method. TiN, which has small diffusion coefficient and low resistivity, is evaporated between SiO$_2$ and Al layers. It investigates the V-R characteristics depending on the thickness of SiO$_2$ which is used as insulation layer and researches its effects on voltage stability of thin film and varistor. These films show very small resistance valus in negative(-) voltage and large and large value in positive voltage band, and with the increase of voltage, resistance value is rapidly reduced and the satisfactory characteristic of varistor is shown at +1[V]. It is found that resistance value of TiN thin film is small and also TiN thin film has more current than the thin film which is not evaporated by TiN thin film. When Al electrode is evaporated of SiO$_2$ thin film, spiking occurs, but the spiking can be prevented with evaporation of TiN between SiO$_2$ and Al layers and this thin films in made easily because of its good attachment. With the increase of voltage, the resistance is changed into non-linear pattern and the bidirectional varistor characteristic is shown and then its theory can be verified by this experiment. Accordingly, when TiN is evaporated of Si Wafer(n-100), it obtains better voltage-resistance than thin film which is not evaporated and also when varistor character is used electrically to automatic control element such as elimination of flame, power distribution arrestor and constant voltage compensation, satisfactory reproducibilities are expected.

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High-temperature Oxidation of the TiAlCrSiN Film Deposited on the Cemented Hard Carbide

  • Lee, Dong Bok
    • Journal of the Korean institute of surface engineering
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    • v.47 no.5
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    • pp.252-256
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    • 2014
  • The TiAlCrSiN film was deposited on the WC-20%TiC-10%Co carbide, and its oxidation behavior was examined at $700-1000^{\circ}C$. It displayed relatively good oxidation resistance owing to the formation of $TiO_2$, $Al_2O_3$, $Cr_2O_3$, and $SiO_2$ up to $900^{\circ}C$. However, at $1000^{\circ}C$, the fast oxidation rate and partial oxidation of WC in the substrate led to the formation of the thick, fragile oxide scale.

Syntheses and properties of Ti2AlN MAX-phase films

  • Zhang, Tengfei;Myoung, Hee-bok;Shin, Dong-woo;Kim, Kwang Ho
    • Journal of Ceramic Processing Research
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    • v.13 no.spc1
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    • pp.149-153
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    • 2012
  • Ti2AlN MAX-phase films were synthesized through the post-annealing process of as-deposited Ti-Al-N films. Near amorphous or quasi-crystalline ternary Ti-Al-N films were deposited on Si and Al2O3 substrates by sputtering a Ti2AlN MAX-phase target at room temperature, 300 ℃ and 450 ℃, respectively. A vacuum annealing of those films at 800 ℃ for 1 hour changed those films to crystalline Ti2AlN MAX-phase. The polycrystalline Ti2AlN MAX-phase films exhibited very excellent oxidation resistance due to its characteristics microstructure (nanolaminates), which has potential applications for high-temperature protective coatings. The microstructure and composition of Ti2AlN MAX-phase films were investigated using with a variety of characterization tools.