• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.97-105
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• 1998

20mol% Gd-doped CeO2 ultrafine powders as a promising electrolyte for the low temperature solid ox-ide fuel cells were synthesized with particle sizes of 15-20 nm using glycine nitrate process(GNP) fol-lowed by sintering their pellets at 150$0^{\circ}C$ for various times in air and then the electrical properties of the sintered pellets were investigated. The sintering behaviors and electrical properties for the sintered 20 sintered mol% Gd-doped CeO2 pellets were analyzed using dilatometer and SEM and AC two-terminal impedance technique respectively. As the heating temperature increased the synthesized powder had the sintering behaviors to show the start of the significant shrink at temperature of about $700^{\circ}C$ and to show the end of the shrink at the temperature of about 147$0^{\circ}C$. When the pellets were sintered with the vaious times at 150$0^{\circ}C$ the temperatuer which the shrink had been already completed the grain sizes in the sintered 20 mol% Gd-doped GeO2 pellets increased with the increase of the sintering time but their electrical resis-tivities showed the minimum value at the sintering time of 10h. It is due that the pellet sintered for 10h had the minimum activation energy fior the electtrical conduction. Thus it is thought that the decrease of the activation energy with the increase of the sintering time to 10h is induced by the enhanced mi-crostructure like the decrease of pore amount and the grain growth and its increase with the sintering times more than 10h is induced by the increase of the amounts of the impurities such as Mg. Al and Si from the sintering atmosphere.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.470-475
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• 2013

In this study, we report that effects of a filler with a high coefficient of thermal expansion on a sealant for high-temperature ($750{\sim}850^{\circ}C$) SOFC. We designed a $SiO_2-BaO-ZnO-B_2O_3-Al_2O_3$ glass system with a softening temperature higher than $750^{\circ}C$. The properties of the glass system show not only low volumetric shrinking but also low swelling. The glass system did not create a crystal phase during along-term heat treatment. We fabricated a seal gasket with 0, 10, 15, and 20 wt% cristobalite added as filler materials with glass powder. The coefficient of thermal expansion of the seal gasket increased according to cristobalite content. During along-term heat treatment, the leak rate decreased by about 5% after a heat treatment in an oxidizing atmosphere at $750^{\circ}C$ for 2000 h, also decreasing by about 6% after a heat treatment in a reducing atmosphere at $750^{\circ}C$ for 1000 h.

• Journal of Surface Science and Engineering
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• v.50 no.5
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• pp.301-307
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• 2017

The purpose of this study is to investigate the electrical properties of thick-film resistor (TFR) prepared from $CaO-ZnO-B_2O_3-Al_2O_3-SiO_2$ (CZBAS) glass containing $RuO_2$ particles. $RuO_2$-glass composite powder was made by mixing and melting oxide powders of constituents. For comparison, $RuO_2$ powder was simply mixed with glass powder. $RuO_2$-40wt% glass composite and mixture were dispersed in an organic binder to obtain printable resistor paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C/min$ in an ambient atmosphere. $RuO_2$-glass composite sample showed much higher resistance compared to the simple mixed sample. This could be attributed to the difference in conducting mechanism. After sintering at $850^{\circ}C$, temperature coefficient of resistance of composite sample was lower than that of simple-mixed sample. TFR with dense and homogeneous microstructure could be obtained by using $RuO_2$-glass composite powder.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1188-1195
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• 1999

The effect of aluminosilicate sol on the formation of mullite layer in zircon shell mold was investigated. Aluminosilicate sol was prepared by mixing of colloidal silica(NALCO(R) 1130) and an aqueous solution of aluminium nitrate at room temperature. The sol gelled at 50$^{\circ}C$ for 48 hrs. It was identified that the gel consists of aluminosilicate complexes and gibbsite. The coordination number of all aluminium ion bonded with silicon ion was four. Mullite phase formed by sintering above 1300$^{\circ}C$. XRD peak of mullite sharpened with increasing sintering temperature and the content of aluminium nitrate. Mullite phase displayed whisker-like 0.5~5${\mu}m $ particles. Separation between 1st and 3rd layers during sintering and the difference in thermal expansion coefficient between residual silica and mullite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.75-75
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• 2018

Commercially pure titanium (CP-Ti) and Ti-6Al-4V alloys have been widely used in implant materials such as dental and orthopedic implants due to their corrosion resistance, biocompatibility, and good mechanical properties. However, surface modification of titanium and titanium alloys is necessary to improve osseointegration between implant surface and bone. Especially, when titanium oxide nanotubes are formed on the surface of titanium alloy, cell adhesion is greatly improved. In addition, plasma electrolytic oxide (PEO) coatings have a good safety for osseointegration and can easily and quickly form coatings of uniform thickness with various pore sizes. Recently, the effects of bone element such as magnesium, zinc, strontium, silicon, and manganese for bone regeneration are researching in dental implant field. The purpose of this study was researched on the surface morphology of PEO-treated Ti-6Al-4V alloy after anodic titanium oxide treatmentusing various instruments. Ti-6Al-4V ELI disks were used as specimens for nanotube formation and PEO-treatment. The solution for the nanotube formation experiment was 1 M $H_3PO_4$ + 0.8 wt. % NaF electrolyte was used. The applied potential was 30V for 1 hours. The PEO treatment was performed after removing the nanotubes by ultrasonics for 10 minutes. The PEO treatment after removal of the nanotubes was carried out in the $Ca(CH_3)_2{\cdot}H_2O+(CH_3COO)_2Mg{\cdot}4H_2O+Mn(CH_3COO)_2{\cdot}4H_2O+Zn(CH_3CO_2)_2Zn{\cdot}2H_2O+Sr(CH_2COO)_2{\cdot}0.5H_2O+C_3H_7CaO_6P$ and $Na_2SiO_3{\cdot}9H_2O$ electrolytes. And the PEO-treatment time and potential were 3 minutes at 280V. The morphology changes of the coatings on Ti-6Al-4V alloy surface were observed using FE-SEM, EDS, XRD, AFM, and scratch tester. The morphology of PEO-treated surface in 5 ion coating solution after nanotube removal showed formation or nano-sized mesh and micro-sized pores.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.229-233
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• 2015

Currently, the majority of commercial white LEDs are phosphor converted LEDs made of a blue-emitting chip and YAG yellow phosphor dispersed in organic silicone. However, silicone in high-power devices results in long-term performance problems such as reacting with water, color transition, and shrinkage by heat. Additionally, yellow phosphor is not applicable to warm white LEDs that require a low CCT and high CRI. To solve these problems, mixing of green phosphor, red phosphor and glass, which are stable in high temperatures, is common a production method for high-power warm white LEDs. In this study, we fabricated conversion lenses with LUAG green phosphor, SCASN red phosphor and low-softening point glass for high-power warm white LEDs. Conversion lenses can be well controlled through the phosphor content and heat treatment temperature. Therefore, when the green phosphor content was increased, the CRI and luminance efficiency gradually intensified. Moreover, using high heat treatment temperatures, the fabricated conversion lenses had a high CRI and low luminance efficiency. Thus, the fabricated conversion lenses with green and red phosphor below 90 wt% and 10 wt% with a sintering temperature of $500^{\circ}C$ had the best optical properties. The measured values for the CCT, CRI and luminance efficiency were 3200 K, 80, and 85 lm/w.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.249-249
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• 1999

GaN과 같은 III-nitride 반도체 관한 식각 기술의 연구는 blue-emitting laser diode(LD)를 위한 경면(mirror facet)의 형성뿐만아니라 새로운 display 용도의 light emitting diodes (LED), 고온에서 작동되는 광전소자 제조 등에도 그 중요성이 증대되고 있다. 최근에는 III-nitride 물질의 높은 식각속도와 미려하고 수직한 식각형상을 이루기 위하여 ECR(Electron Cyclotron Resonance)이나 ICP(Inductively Coupled Plasma)와 같은 고밀도 플라즈마 식각과 CAIBE(Chemically assisted ion beam etching)를 이용한 연구가 진행되고 있다. 현재 제조되어 지고 있는 LED 및 LD와 같은 광소자의 구조의 대부분은 p-GaN/AlGaN/InGaN(Q.W)/AlGaN/n-GaN 와 같은 여러 층의 형태로 이루어져 있다. 이중 InGaN는 광소자나 전자소자의 특성에 영향을 주는 가장 중요한 부분으로써 현재까지 보고된 식각연구는 undoped GaN에 대부분 집중되고 있고 이에 비해 소자 특성에 핵심을 이루는 InGaN의 식각특성에 관한 연구는 미흡한 상황이다. 본 연구에서는 고밀도 플라즈마원인 ICP 장비를 이용하여 InGaN를 식각하였고, 식각에는 Cl2/CH4, Cl2/Ar 플라즈마를 사용하였다. InGaN의 식각특성에 영향을 미치는 플라즈마의 특성을 관찰하기 위하여 quadrupole mass spectrometry(QMS)와 optical emission spectroscopy(PES)를 사용하였다. 기판 온도는 5$0^{\circ}C$, 공정 압력은 5,Torr에서 30mTorr로 변화시켰고 inductive power는 200~800watt, bias voltage는 0~-200voltage로 변화시켰으며 식각마스크로는 SiO2를 patterning 하여 사용하였다. n-GaN, p-GaN 층 이외에 광소자 제조시 필수적인 InGaN 층을 100% Cl2로 식각한 경우에 InGaN의 식각속도가 GaN에 비해 매우 낮은 식각속도를 보였다. Cl2 gas에 소량의 CH4나 Ar gas를 첨가하는 경우와 공정압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%Ar 플라즈마에서 공정 압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%CHF3 와 Cl2/10%Ar 플라즈마에서 공정압력을 15mTorr로 감소시키는 경우 InGaN과 GaNrks의 선택적인 식각이 가능하였다. InGaN의 식각속도는 Cl2/Ar 플라즈마의 이온에 의한 Cl2/CHF3(CH4) 플라즈마에서의 CHx radical 형성에 의하여 증가하는 것으로 사료되어 진다.

• Journal of Technologic Dentistry
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• v.33 no.4
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• pp.263-270
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• 2011

Purpose: The grindability of binary Ti-X%Zr(X=10,20,40) alloys in order to develop a Ti alloy with better machinability than unalloyed titanium has been evaluated. Methods: Experimental Ti-Zr alloys were made in an argon-arc melting furnace. Slabs of experimental alloys were ground using a SiC abrasive wheel on an electric handpiece at circumferential speeds(12000,18000,25000 or 30000rpm) by applying a force(200gr). Grinding rate was evaluated by measuring the amount of metal volume removed after grinding for 1 minute and the volume ratio of metal removed compared to the wheel material lost, which was calculated from the diameter loss (grinding ratio). Experimental datas were compared to those for cp Ti(commercially pure titanium) and Ti-6%Al-4%V alloy were used controls. Results: It was observed that the grindability of Ti-Zr alloys increased with an increase in the Zr concentration. More, they are higher than cp Ti, particularly the Ti-20%Zr alloy exhibited the highest grindability at all circumferential speeds. There was significant difference in the grinding rate and grinding ratio between Ti-20%Zr alloy and cp Ti at any speed(p<0.05). Conclusion: By alloying with Zr, the Ti exhibited better grindability at all circumferential speeds. the Ti-20%Zr alloy has a great potential for use as a dental machining alloy.

• Korean Journal of Materials Research
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• v.27 no.5
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• pp.281-288
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• 2017

In this study, Fe-Ni slag, converter slag and dephosphorization slag generated from the steel industry, and fly ash or bottom ash from a power plant, were mixed at an appropriate mixing ratio and melted in a melting furnace in a mass-production process for glass ceramics. Then, glass-ceramic products, having a basalt composition with $SiO_2$, $Al_2O_3$, CaO, MgO, and $Fe_2O_3$ components, were fabricated through casting and heat treatment process. Comparison was made of the samples before and after the modification of the process conditions. Glass-ceramic samples before and after the process modification were similar in chemical composition, but $Al_2O_3$ and $Na_2O$ contents were slightly higher in the samples before the modification. Before and after the process modification, it was confirmed that the sample had a melting temperature below $1250^{\circ}C$, and that pyroxene and diopside are the primary phases of the product. The crystallization temperature in the sample after modification was found to be higher than that in the sample before modification. The activation energy for crystallization was evaluated and found to be 467 kJ/mol for the sample before the process modification, and 337 kJ/mol for the sample after the process modification. The degree of crystallinity was evaluated and found to be 82 % before the process change and 87 % after the process change. Mechanical properties such as compressive strength and bending strength were evaluated and found to be excellent for the sample after process modification. In conclusion, the samples after the process modification were evaluated and found to have superior characteristics compared to those before the modification.