• Nuclear Engineering and Technology
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• v.43 no.2
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• pp.159-166
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• 2011

Si-rich-layer-coated U-7 wt%Mo plates were prepared in order to evaluate the diffusion barrier performance of the Si-rich layer in U-Mo vs. Al interdiffusion. Pure Si powder was used for coating the U-Mo plates by annealing at $900^{\circ}C$ for 1 h under vacuum of approximately 1 Pa. Si-rich layers containing more than 60 at% of Si were formed on U-7 wt%Mo plates. Diffusion couple tests were conducted in a muffle furnace at $560-600^{\circ}C$ under vacuum using Si-rich-layer-coated U-Mo plates and pure Al plates. Diffusion couple tests using uncoated U-Mo plates and Al-(0, 2 or 5 wt%)Si plates were also conducted for comparison. Si-rich-layer coatings were more effective in suppressing the interaction during diffusion couple tests between coated U-Mo plate and Al, when compared with U-Mo vs. Al-Si diffusion couples, since only small amounts of Al in the coating could be found after the diffusion couple tests. Si-rich-layer-coated U-7wt%Mo particles were also prepared using the same technique for U-7 wt%Mo plates to observe the microsturctures of the coated particles.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.165.2-165
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• 2000

• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.781-789
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• 1997

Pressure sintered SiC specimens were joined using MgO-Al2O3-SiO2 (MAS) glass which has a thermal expansion coefficient similar to that of SiC. MAS melt showed excellent behavior of wetting on the SiC substrate over 148$0^{\circ}C$, and the wettability was much influenced by the joining atmosphere. The joining was conducted at 150$0^{\circ}C$ for 30 min in Ar atmosphere. The flexural strength of the joined specimen shows 342~380 MPa up to 80$0^{\circ}C$, which is almost the same as that of as-recieved SiC specimen. However, the flexural strength of the joined specimen decreased to about 80 MPa at 90$0^{\circ}C$ due to softening of the glass melt. The analyses od XRD and WDS show that the reaction between the SiC specimen and the MAS melt produces the oxycarbide glass, which had a high strength and a good stability at high temperatures.

• Journal of the Korean institute of surface engineering
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• v.49 no.5
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• pp.467-471
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• 2016

In order to investigate the Na gettering, PSG/$SiO_2$/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/$SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/$SiO_2$/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/$SiO_2$ interface and at the $SiO_2$/Al-1%Si interfaces. Na impurity gettering in PSG/$SiO_2$/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be $SiO_2$.

• Applied Microscopy
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• v.26 no.1
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• pp.95-104
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• 1996

A comprehensive methodology to characterize the interfacial reaction products of $SiC_p/2024$ Al composites is introduced on the basis of the experimental results obtained using XRD, SEM and TEM. XRD performed on the electrochemically extracted $SiC_p$ and bulk $SiC_p/2024$ Al composite have shown that the interfacial reaction products consist of $Al_{4}C_3$ having hexagonal crystallographic structure, pure eutectic Si having diamond cubic crystallographic structure, and $CuAl_2$, having tetragonal crystalloraphic structure, respectively. According to the images observed by SEM, $Al_{4}C_3$, which has been reported to have needle shape, has a hexagonal platelet-shape and eutectic Si is found to have a dendritic shape. In addition eutectic $CuAl_2$, was observed to form near interface and/or along the grain boundaries. In order to confirm the results obtained by XRD, the primitive cell volume and reciprocal lattice height of such interfacial reaction products were calculated using the data obtained from convergent beam electron diffraction (CBED) patterns, and then compared with theoretical values.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1588-1590
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• 2004

The composites were fabricated, respectively, using 61vol.% SiC - 39vol.% $TiB_2$ and using 61vol.% SiC 39vol.% WC powders with the liquid forming additives of 12wt% $Al_2O_3+Y_2O_3$ by pressureless annealing at 1800$^{\circ}C$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, WC were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H), $TiB_2$ and YAG($Al_5Y_3O_{12}$) crystal phase on the SiC-$TiB_2$, and SiC(2H), WC and YAG($Al_5Y_3O_{12}$) crystal phase on the SiC-WC composites. ${\beta}{\rightarrow}{\alpha}$-SiC phase transformation was ocurred on the SiC-$TiB_2$, but ${\alpha}{\rightarrow}{\beta}$-SiC reverse transformation was not occurred on the SiC-WC composites. The relative density, the flexural strength showed respectively value of 96.2%, 310.19Mpa in SiC-WC composites. The electrical resistivity of the SiC-$TiB_2$ and the SiC-WC composites is all positive temperature cofficient resistance(PTCR) in the temperature ranges from 25$^{\circ}C$ to 500$^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.112.2-112.2
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.151-154
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• 2003

AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.853-855
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• 1998

The electrical resistivity and mechanical properties of the hot-pressed and annealed ${\beta}$-SiC+39vol.%$ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_{2}O_{3}+Y_{2}O_{3}$(6:4wt%). In this microstructures. no reactions were observed between $\beta$-SiC and $ZrB_2$, and the relative density is over 97.6% of the theoretical density. Phase analysis of composites by XRD revealed mostly of a $\alpha$-SiC(6H, 4H), $ZrB_2$ and weakly $\beta$-SiC(15R) phase. The fracture toughness decreased with increased $Al_{2}O_{3}+Y_{2}O_{3}$ contents and showed the highest for composite added with 4wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives. The electrical resistivity increased with increased $Al_{2}O_{3}+Y_{2}O_{3}$ contents because of the increasing tendency of pore formation according to amount of liquid forming additives $Al_{2}O_{3}+Y_{2}O_{3}$. The electrical resistivity of composites is all positive temperature coefficient resistance(PTCR) against temperature up to $700^{\circ}C$.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.199-207
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• 1997

$Al_2O_3$/SiC particulate composites were fabircated by pressureless sintering. The dispersed phase was SiC of which the content was varied from 1.0 to 10 vol%. Three SiC powders having different median diameters from 0.28 $\mu\textrm{m}$ to 1.9 $\mu\textrm{m}$ were used. The microstructure became finer and more uniform as the SiC content increased except the 10 vol% specimens, which were sintered at a higher temperature. Under the same sintering condition, densification as well as grain growth was retarded more severly when the SiC content was higher or the SiC particle size was smaller. The highest flexural strength obtained at 5.0 vol% SiC regardless of the SiC particle size seemed to be owing to the finer and more uniform microstructures of the specimens. Annealing of the specimens at $1300^{\circ}C$ improved the strength in general and this annealing effect was good for the specimens containing as low as 1.0 vol% of SiC. Fracture toughness did not change appreciably with the SiC content but, for the composites containing 10 vol% SiC, a significantly higher toughness was obtained with the specimen containing 1.9$\mu\textrm{m}$ SiC particles.