• Transactions of the Korean Society of Automotive Engineers
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• v.13 no.4
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• pp.174-181
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• 2005

In order to investigate the behavior of fatigue crack growth of SiC-particulate- reinforced Al-Si alloy composites, fatigue tests using single edge notched tension(SENT) specimens were performed. Composite materials were manufactured by using both permanent die casting and extrusion processes with different volume fractions of $10\%\;and\;20\%$. $SiC_p-reinfurced$ Al-Si composites showed the increased levels of threshold stress intensity factor range, ${\Delta}K_{th}$, for the increased volume fractions of SiC particles, which implies the increased fatigue crack growth resistance at the threshold or low ${\Delta}K$ levels, compared to the unreinforced Al-Si alloy. In the Paris region, however, the composites showed the increased rate of crack growth resulting in the unfavorable effects on the fatigue crack growth resistance. Critical stress intensity factor range at unstable crack growth leading to final fracture decreased as the volume fraction of SiC particle increased, because of the reduced fracture toughness of the composites. Extruded materials showed higher threshold and critical values than the cast materials.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.364-371
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• 2013

The sintering behavior of monolithic SiC is examined using the binary sintering additive of $Al_2O_3$-rare earth oxide ($RE_2O_3$, where RE = Sc, Nd, Dy, Ho, or Yb). Through hot pressing at 20 MPa and $1750^{\circ}C$ for 1 h in an Ar atmosphere for 52 nm fine ${\beta}$-SiC powder added with 5 wt% sintering additive, a SiC density of > 97% is achieved, which indicates the effectiveness of $Al_2O_3-RE_2O_3$ system as a sintering of additive for SiC. Based on this result, 7 wt% of $Al_2O_3-Sc_2O_3$ is tested as an additive system for the fabrication of a continuous SiC fiber-reinforced SiC-matrix composite ($SiC_f$/SiC). Electrophoretic deposition combined with the application of ultrasonic pulses is used to efficiently infiltrate the matrix phase into the voids of $Tyranno^{TM}$-SA3 fabric. After hot pressing, a composite density of > 97% is obtained, along with a maximum flexural strength of 443 MPa.

• Journal of Korea Foundry Society
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• v.17 no.1
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• pp.28-35
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• 1997

SiC whisker and $Al_2O_3-SiO_2$ short fiber reinforced AC8A, AC8B and AC8B(J) marix composites were fabricated by squeeze casting method. Preform deformation, change of reinforcement volumefraction and formation of macro-segregation in two composites were investigated by using micro Vickers hardness test, analysis of macro and micro structures with OM, SEM and EDAX. $Al_2O_3-SiO_2$ short fiber preform manufactured with 5% $SiO_2$ binder in this study was considerably deformed and cracked, nevertheless, the short fibers were distributed homogeneously in the composites. In SiC whisker reinforced composites, on the other hand, preform deforming and cracking were not occurred, however, macro segregation zone formed along the infiltration routes by interface reaction during infiltration of molten metal into the preform was observed at center-low area in the composites. The decrease of hardness in the macro segregation zone resulted from the depletion of Si and Mg atoms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

• Journal of the Korean Ceramic Society
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• v.28 no.7
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• pp.561-567
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• 1991

Submicron ${\alpha}-SiC$ powder with $Al_2O_3$ addition was hot-pressed under the controlled heating and pressurizing schedule. $SiO_2$ layer on ${\alpha}-SiC$ powder was effective for the sintering of ${\alpha}-SiC$ powder when $Al_2O_3$ was used as an additive. Applying of pressure under the controlled schedule accelerated the rearrangment of SiC grains, yielding 98% of theoretical density of SiC even at $1900^{\circ}C$. Flexural strength of the specimen containing 2 wt% $Al_2O_3$ was increased as increasing the hot-pressing temperature up to $2050^{\circ}C$ and maximum value was 800 MPa, while the flexural strength of the specimen containing 10 wt% $Al_2O_3$ was decreased as increasing the hot-pressing temperature above $2000^{\circ}C$ due to the formation of continuous grain boundary phase. Fracture toughness of the specimens was in the range of $3.5~4.5\;MNm^{-3/2}$ regardless of the amount of $Al_2O_3$ addition.

• Journal of IKEEE
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• v.25 no.1
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• pp.1-9
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• 2021

In this paper, a 4H-SiC UMOSFET was studied which is suitable for high voltage and high current applications. In general, SiO2 is a material most commonly used as a gate dielectric material in SiC MOSFETs. However, since the dielectric constant value is 2.5 times lower than 4H-SiC, it suffers a high electric field and has poor characteristics in the SiO2/SiC junction. Therefore, the static characteristics of a device with high-k material as a gate dielectric and a device with SiO2 were compared using TCAD simulation. The results show BV decreased, VTH decreased, gm increased, and Ron decreased. Especially when the temperature is 300K, the Ron of Al2O3 and HfO2 decreases by 66.29% and 69.49%. and at 600K, Ron decreases by 39.71% and 49.88%, respectively. Thus, Al2O3 and HfO2 are suitable as gate dielectric materials for high voltage SiC MOSFET.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.193-202
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• 1999

Al powder, AlN powder, SiC whisker and sintering aids were wet-mixed, and then the specimens prepared with mixed powder were reacted by nitridation at 600∼1400$^{\circ}C$ for 5 hrs. It was cleat that the higher nitridation and the more SiC whisker content were, the better bending strength was. The specimen of Al50/AlN50 reacted at 1400$^{\circ}C$ for 5hrs had the nitridation percent of 97%, the shrinkage under 2%, and the relative density of 78%. And the maximum bending strength of reaction-bonded specimen was 250 MPa. The specimens completely nitrided were post-sintered at 1700, 1800 and 1900$^{\circ}C$ for 2hrs. The post-sintered body had the shrinkage under 6% and the relative density of 86%. Because of the formation of solid solution between AlN and SiC whisker over 1800$^{\circ}C$, the promotion of mechanical properties according to SiC whisker addition was not observed. The post-sintered body had the maximum bending strength of 195 MPa.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1301-1302
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• 2006

Sintered composites of Al-8wt%Cu-10vol%SiCp were deformed by repressing or equal channel angular pressing(ECAP) at room temperature, $500^{\circ}C$ and $600^{\circ}C$. Repressing produced more densification than ECAP but resulted in much lower transverse rupture strengths. In both cases, deformation at room temperature and $500^{\circ}C$, resulted in much lower strengths than deformation at $600^{\circ}C$, and also caused the fracturing of some SiC particles. The higher bend strengths and less SiC fracturing at $600^{\circ}C$ are attributable to the presence of an Al-Cu liquid phase during deformation. The employment of copper coated SiC instead of bare SiC particles for preparing the composites was found not improving the properties.

• Journal of Ocean Engineering and Technology
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• v.22 no.4
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• pp.59-64
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• 2008

The mechanical properties of liquid phase sintered (LPS) SiC materials, with the addition of oxide powder, were investigated, in conjunction with a detailed analysis of their microstructures. LPS-SiC materials were fabricated at a temperature of 1820 $^{\circ}C$ under an argon atmosphere, using three different starting sizes of SiC particles. The sintering additive for the fabrication of the LPS-SiC materials was an $Al_2O_3-Y_2O_3$ mixture with a constant composition ratio ($Al_2O_3/Y_2O_3$: 1.5). The particle sizes of the commercial SiC powderswere 30 nm, 0.3 $\mu$m, and 3.0 $\mu$m. The flexural strength of the LPS-SiC materials was also examined at elevated temperatures. A decrease in the starting size of the SiC particles led to an increase in the flexural strength of the LPS-SiC materials, accompanying a highly dense morphology with the creation of a secondary phase. Such a secondary phase was identified as $Y_3Al_2(AlO_4)2$. The flexural strength of the LPS-SiC materials greatly decreased with an increase in the test temperature, due to the creation of a large amount of pores.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.9
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• pp.2374-2385
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• 1994

SiCw/Al composite material is especially attractive because of their superior specific strength, specific stiffness, corrosion fatigue resistance, creep resistance, and wear resistance compared with the corresponding wrought Al alloy. In this study, Fatigue crack growth behavior and fatigue crack path morphology(FCPM) of SiC whisker reinforced Al 6061 alloy with 25% SiC volume fraction and Al 6061 allay were performed. Result of the fatigue crack growth test sgiwed that fatigue crack growth rate of SiCw/Al 6061 composite was slower than that of Al 6061 matrix therefore it was confirmed that Sic whisker have a excellent fatigue resistance. And Al 6061 matrix had only FCPM perpendicular to loading direction. On the other hand SiCw/Al 6061 composite had three types in fatigue crack path morphology. First type is that both sides FCPM of artificial notch are perpendicular to loading direction. Second type is that a FCPM in artifical notch has slant angle to loading direction and the other side FCPM is perpendicular to loading direction. Third type is that both sides FCPM of notch have slant angle to loading direction. It was considered that this kinds of phenomena were due to non-uniform distribution of SiC whisker and confirmed by SEM observation for fracture mechanism study.