• 한국세라믹학회지
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• 제36권2호
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• pp.210-219
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• 1999

Alcohols, hydrocarbons, ketones 그리고 ethers와 같은 다양한 유기용매에서 질화규소 및 소결첨가제로 사용되는 AlN, Nd2O3 입자의 분산특성을 연구하였다. 분산안정화기구 및 유기공정첨가제와의 상호작용에 관한 연구를 수행하여 비수계 시스템에서 세라믹 입자의 분산성을 규명하였다. 현탁액의 물성특성은 산술된 Hamaker 상수 뿐 아니라 electrokinetic sonic amplitude 측정 및 유동학적 결과로부터 얻어진 흐름곡선을 이용하여 평가하였다. 유기용매 내에서 Si3N4, AlN 그리고 Nd2O3 분산안정화에 기여하는 정전기적 척력은 예상보다 컸으며, 이것은 유기용매의 물리화학적 특성에 의존함을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제28권11호
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• pp.711-714
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• 2015

In this paper, high quality AlN layers were regrown on AlN nanopillar structure with $SiO_2$-dots by HVPE. Surface morphology of AlN layer regrown exhibited flatter than a conventional AlN template. The laterally overgrown AlN regions would consist of a continuous well coalesced layer with lower dislocation density than in the template because of the dislocation blocking and dislocation bending effects. Moreover, result of Raman spectroscopy suggest that the AlN nanopillar structure with $SiO_2$-dots relieves the strain in the AlN layer regrown by HVPE.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.71-72
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• 2008

In this paper, the effect of thermal annealing on surface acoustic wave (SAW) properties of aluminum nitride (AlN) films were described. The films were fabricated on Si substrates by using Pulsed Reactive Magnetron Sputtering System. The SAW properties of $600^{\circ}C$-annealed AlN films were better than those of both $900^{\circ}C$-annealed AlN films and as-deposited ones. Their SAW velocities (Raleigh mode) and insertion losses were about 5212 m/s and 16.19 dB at $600^{\circ}C$ with the wavelength of $40{\mu}m$. The dependence of characteristics of AlN films on annealing conditions were also evaluated by using Fourier Transform-Infrared Spectroscopy (FT-IR) Spectrums and Atomic Force Microscopy (AFM).

• Bulletin of the Korean Chemical Society
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• 제14권2호
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• pp.255-258
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• 1993

Molecular dynamics (MD) calculations were carried out in order to investigate the effect of MD cell size to predict the melting phenomena of A-type zeolite. We studied two model systems: a pseudocell of $(T_2O_4Na)_n$, (L= 12.264 $^{\AA}$, N= 84) and a true-cell of (SiAlO$_4Na)_n$. (L= 24.528 $^{\AA}$, N= 672), where T is Si or Al. The radial and bond angle distribution functions of T(Si, Al)-O-T(Si, Al) and diffusion coefficients of T and O were reported at various temperatures. For the true-cell model, the melting temperature is below 1500 K and probably around 1000 K, which is about 600-700 K lower than the pseudocell model. Although it took more time (about 30 times longer) to obtain the molecular trajectories of the true-cell model than those of the pseudocell model, the true-cell model gave more realistic structural transition for the A-type zeolite, which agrees with experiment.

• 한국세라믹학회지
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• 제33권2호
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• pp.169-176
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• 1996

The specimens which were prepared from $\alpha$-Si3N4 with additions of YAG(3Y2O3.5Al2O3)-10 wt% and various AlN contents were sintered in N2 atmosphere at 1$700^{\circ}C$ The effect of $\alpha$,$\beta$-solid solution contents and sintering time on mechanical properties were investigated. As the content of $\beta$-solid solution and sintering time increased the hardness is reduced but the hardness of specimen sintered over 10 hours is constant irrespective of sintering time. While the fracture toughness increased with increasing of $\beta$-solid solution and sintering time. The fracture toughness of specimen with 80% $\beta$-solid solution content increased from 3.89 to 6.66 MPam1/2 with sintering sintering up to 20 hours/ But the amount of increased fracture toughness of specimen with below 20% $\beta$-solid solution content is not significant.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.461-464
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• 1987

With the fabrication of Al-$Al_2O_3$-n(p) type Si devices, the analysis and measurement of various characteristics, this study presented the electric physical property theory for the charge distribution of MAS device $Al_2O_3$ films, and inquired out the devices available. In order to study them, Al-(450A)$Al_2O_3$-n(p) type Si was the main objects in the study. They were examined through carrier injection, C-V curves of devices on time, ${\Delta}V_{FB}$-t curves, I-V curves and $Al_2O_3$ film's breakdown characteristics.

• 한국표면공학회지
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• 제56권5호
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• pp.335-340
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• 2023

Quinary component of 3㎛ thick Ti-Al-Si-Cu-N films were deposited onto WC-Co and Si wafer substrates by using an arc ion plating(AIP) system. In this study, the influence of copper(Cu) contents on the mechanical properties and microstructure of the films were investigated. The hardness of the films with 3.1 at.% Cu addition exhibited the hardness value of above 42 GPa due to the microstructural change as well as the solid-solution hardening. The instrumental analyses revealed that the deposited film with Cu content of 3.1 at.% was a nano-composites with nano-sized crystallites (5-7 nm in dia.) and a thin layer of amorphous Si₃N₄ phase.

• 전기전자학회논문지
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• 제22권4호
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• pp.1230-1233
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• 2018

에어로졸 데포지션 (aerosol deposition)공정을 통해 $Al_2O_3$막을 4H-SiC 상에 50 nm 두께로 제조하였고, 후열처리 공정에 따른 전기적 특성을 분석하였다. 그 결과 $N_2$분위기 열처리 시 $Al_2O_3$와 SiC 계면의 고정전하량이 감소하였으나 산소공공 생성에 의한 누설전류의 증가를 확인하였다. 본 결과로부터 계면특성 향상과 누설전류의 감소를 위해서는 적절한 $N_2$와 $O_2$가스의 혼합이 중요함을 확인하였다.

• 한국결정성장학회지
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• 제23권6호
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• pp.279-282
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• 2013

최근 관심이 높아지고 있는 GaN, SiC 단결정과 함께 자외선 LED 및 전력 반도체 용 기판 소재로서 응용성이 높은 질화갈륨(AlN, Aluminum Nitride) 단결정을 성장하였다. 아직 상용화된 AlN 기판은 없지만, 단결정 성장에 대한 연구가 이루어지고 있다. 본 연구에서는 국내 최초로 AlN 단결정의 성장 결과 직경 약 8 mm의 결정을 성장하였다. 성장된 단결정은 광학현미경으로 관찰하였으며, DCXRD를 통하여 결정성을 평가한 결과를 보고하고자 한다.

• Journal of Korean Vacuum Science & Technology
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• 제5권1호
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• pp.11-18
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• 2001

Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.