• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.75-77
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• 2012

The AlGaN-based vertical light-emitting diodes (LEDs) on thick GaN epilayer were fabricated by a hydride vapor phase epitaxy with multi sliding boat system. The optical and electrical characteristics of AlGaN-based vertical LEDs were evaluated using a scanning electron microscopy, electroluminescence and I-V measurements. The AlGaN-based vertical LEDs structure has hexagonal symmetry, 500 ㎛ in diameter and above 67 ㎛ in growth thickness. At the room-temperature, the broaded strong peak and relatively high intensity peak were gradually measured at 405 nm with increasing injection current. And a forward operator voltage was measured to be about 7.5 V.

• Applied Chemistry for Engineering
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• v.23 no.6
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• pp.572-576
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• 2012

This study presents the $CO_2$ methanation reaction on Pt catalysts for reducing the amount of $CO_2$, one of greenhouse gases. The AlO(OH) of $Al_2O_3$precusor was used as a support via a thermal treatment and the Pt was used as an active metal. In XRD results, it was confirmed that the Pt was well dispersed and the support existed as the gamma $Al_2O_3$phase. The $Pt/Al_2O_3$ catalyst calcined at $600^{\circ}C$ showed the highest conversion efficiency and selectivity.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.287-292
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• 2006

Al substituted $CoAl_{0.5}Fe_{1.5}O_{4}$ has been studied with x-ray and neutron diffraction, $M\"{o}ssbauer$ spectroscopy and magnetization measurements. $CoAl_{0.5}Fe_{1.5}O_{4}$ revealed a cubic spinel structure of ferrinmagnetic long range ordering at room temperature, with magnetic moments of $Fe^{3+}(A)(-2.29{\mu}_{B}),\;Fe^{3+}(B)(3.81\;{\mu}_{B}),\;Co^{2+}(B)(2.66{\mu}_{B})$, respectively. The temperature dependence of the magnetic hyperfine field in $^{57}Fe$ nuclei at the tetrahedral (A) and octahedral (B) sites was analyzed based on the $N\'{e}el$ theory of magnetism. In the sample of $CoAl_{0.5}Fe_{1.5}O_{4}$, the interaction A-B interaction and intrasublattice A-A superexchange interaction were antiferromagnetic with strengths of $J_{A-B}=-19.3{\pm}0.2k_{B}\;and\;J_{A-A}=-21.6{\pm}0.2k_{B}$, respectively, while the intrasublattice B-B superexchange interaction was found to be ferromagnetic with a strength of $J_{B-B}=3.8{\pm}0.2k_{B}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.170-174
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• 2018

AlN crystal is been developing in global site for many years and 1 inch diameter wafer was already developed but it is demanding the efforts for the better quality. On the other hand, also the 2-inch size is developing recently to reduce the unit cost for manufacturing and to use to fabrication of the UV LED chips. In this study, we tried to evaluate the possibility of bulk AlN crystals on his thin films by PVT method. The AlN thin film was grown on SiC single crystal 2" wafer by HVPE method. We successfully grew AlN bulk crystal of a thickness of 7 mm using its thin film of a thickness of $10{\mu}m$ as a seed crystal. The resultants of AlN crystals were identified by metallurgical microscope, optical stereographic microscope and DCXRD measurement.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.163-167
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• 2004

TiAl(La)N thin films were oxidized in vacuum of about 7 Pa to reduce the oxidation of WC-Co as a substrate. The oxidation rate constants of the thin films were quantified by an assumption of parabolic oxidation. Increasing AI content significantly decreased the parabolic oxidation rate constant. A simultaneous addition of AI and La was more effective to reduce the oxidation rate. The parabolic oxidation rate constant of $Ti_{0.66}$ $Al_{0.32}$ $La_{ 0.02}$N thin film at 1273 K showed about ten times lower than that of TiN. The addition of a small amount of La with Al induced the preferential formation of dense $\alpha$ $-Al_2$$O_3$ film in oxide film, leading to the abrupt reduction of oxidation rate.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.431-435
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• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.191-195
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• 2004

Tunnel junctions with AI-N barriers fabricated by microwave-excited plasma were studied. When the Al thickness, nitridation time, and annealing temperature were 1 nm (0.8 nm), 50 s (35 s), and $280^{\circ}C$ ($300^{\circ}C$), TMR ratio and resistance-area product (RA) were 49% (34%) and $3 ${\times}$ 10^4$ $\Omega$$\mu\m^2$ ($1.5 ${\times}$ 10^4$ $\Omega$$\mu\m^2$), respectively. In order to clarify the annealing temperature dependence of TMR ratio, the local transport properties were measured for Ta 5 nm/Cu 20 nm/Ta 5 nm$29_{76}$ $Fe_{24}$ 2 nm/Cu 5 nm/M $n_{75}$$Ir_{25}$ 10 nm/ $Co_{71}$ $Co_{29}$ 4nm/Al-N junction with Al thickness of 0.8 nm and nitridation time of 35s at various temperatures. The increase of TMR ratio after annealing at $300^{\circ}C$, where the TMR ratio of the corresponding MTJ had the maximum value of 34%, can be well explained by the enhancement of the average barrier height ($\Phi_{ave}$) and the reduction of its fluctuation. After further annealing at $340^{\circ}C$, the leakage current was observed and the TMR ratio decreaseded

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.123-123
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• 2010

3족 질화물계 물질은 발광다이오드와 같은 광전자소자적용에 있어서 매우 우수한물 질이다.일반적으로, GaN 에피 성장에 있어서 저온 중간층을 삽입한 2 단계 성장 방법은 낮은 결함밀도와 균일한 표면을 얻기 위해 도입된 기술이다. 특히 AlN 중간층은 GaN 중간층과 비교하였을 때 결정성뿐만 아니라 높은 온도에서의 열적안정성, GaN 기반의 자외선 검출기서의빛 흡수 감소 등의 장점을 가지고 있다. 또한 패턴 사파이어 기판위 GaN 에피 성장은 측면성장 효과를 통해 결함 밀도 감소와 광 추출 효율을 향상시키는 것으로 알려져 있다.또한 열응력으로 인한 기판의 휨 현상은 박막성장중 기판의 온도 분포를 불균일하게 만드는 원인이 되며 이는 결국 박막 조성 및 결정성의 열화를 유도하게 되고 최종적으로 소자특성을 떨어 뜨리는 원인이 되는데 AlN 중간층의 도입으로 이것을 완화시킬 수 있는 효과가 있다. 하지만, AlN 중간층이 패턴된 기판 위에 성장시킨 GaN 에피층에 미치는 영향은 명확하지 않다. 본 연구팀은 일반적인 c-plane 사파이어 기판과 플라즈마 건식 에칭을 통한 렌즈 모양의 패턴된 사파이어 기판을 이용해서 AlN 중간층과 GaN 에피층을 유기금속 화학기상증착법으로 성장하였다. 특히, 렌즈 모양의 패턴된 사파이어 기판은 패턴 모양과 패턴 밀도가 성장에 미치는 영향을 연구하기 위해 두가지 패턴의 사파이어 기판을 이용하였다. AlN 중간층 두께를 조절함으로써 최적화된 GaN 에피층을 90분까지 4단계로 시간 변화를 주어 성장 양상을 관찰한 결과, GaN 에피박막의 성장은 패턴 기판의 trench 부분에서 시작하여 기판의 패턴부분을 덮는 측면 성장을 보이고있다. 또한 TEM과 CL을 통해 GaN 에피박막의 관통 전위를 분석해 본 결과 측면 성장과정에서 성장 방향을 따라 옆으로 휘게 됨으로 표면까지 도달하는 결정결함의 수가 획기적으로 줄어드는 것을 확인함으로써 고품질의 GaN 에피층을 성장시킬 수 있었다. 그리고 패턴밀도가 높고 모양이 볼록할수록 측면 성장 효과로 인한 결정성 향상과 난반사 증가를 통한 임계각 증가로 광추출 효율이 향상 되는 것을 확인할 수 있었다. 이러한 결과를 바탕으로 최적화된 AlN 중간층을 이용하여 패턴 기판위에서 고품질의 GaN 에피층을 성장시킬 수 있었다.

• Journal of the Korean Ceramic Society
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• v.28 no.6
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• pp.457-464
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• 1991

Aluminum nitride (AlN) has excellent properties such as high thermal conductivity and electrical resistivity, whereas it has some disadvantages such as low sinterability and tendency to be hydrolyzed by moisture at room temperature. In the present work, the relative density, modulus of rupture and microhardness were examined for pressure-less-sintered AlN (synthetic and commercial) bodies which were prepared under the conditions of various sintering temperatures, holding times and additions of CaCO3 which showed the best effect on sinterability among the various sintering aids. As a result, the AlN bodies with 1.0 wt% CaCO3 (0.56wt% CaO) which were sintered at 1800$^{\circ}C$ for 20 min showed good densification. In this case, the relative densities were 95.9% and 95.2%, and microhardnesses were 10.3 GPa and 9.8 GPa for synthetic and commercial AlN respectively. And as the holding time at 1800$^{\circ}C$ was increased from 10 min to 60 min, the relative density was increased from 91.9% to 96.5%. It was considered that impurities of metals and oxygen promoted the densification of AlN at low temperature (1600$^{\circ}C$).

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.123-128
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• 1999

This paper reports the preparation and characterization of colored coatings of $Al_2O_3$-CoO. Films of 25mol% CoO doped $Al_2O_3$, have been prepared on soda-lime-silica slide glasses by the sol-gel process from Al-alkoxide and Co-nitrate. The films have been characterized by a photospectroscopy and hardness tester. The color, spectral reflectance and spectral transmittance of the films was expressed in Lab color chart and on spectra plot. Microhardness of the films increased with increasing of the heating temperature. Transmittance and reflectance of the films decreased with increase of the heating temperature and coating times. The coating films showed various light-yellow, deep-yellow, greenish-yellow color as a function of the coating times and heating temperature.