• 한국재료학회지
• /
• 제10권9호
• /
• pp.624-628
• /
• 2000

표면 탄성과 디바이스의 전극재료로 사용되는 Al-%Cu(4000$\AA$)/tungsten nitride 박막을 magnetron sputtering 법으로 제조하고 전기저항을 평가한 비정질상의 tungsten nitride 박막을 제조할 수 있었고, 비정질 형성을 위해 질소비(R =$N_2$/(Ar+$N_2$)가 10~40% 정도 필요하다. Tungsten nitride 박막의 잔류응력은 비정질이 형성되면서 급격히 감소되었다. 이러한 비정질 박막위에 Al-1%Cu 합금막이 형성되었다. 다층막은 453K에서 4시간 동안 열처리함으로써 $3.6{\mu}{\Omega}-cm$의 저항을 나타냈는데, 이는 박막내 결정립 성장과 결함의 감소에 기인하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
• /
• pp.165-168
• /
• 2004

In this study, AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. The electrical, optical and crystallographic properties of AZO thin film with $O_2$ gas flow ratio have been investigated. The thickness, transmittance, crystal structure and resistivity of AZO thin film were measured by a-step, UV-VIS spectrometer, XRD and four-point probe, respectively. As a result AZO thin film deposited with the transmittance over 80% and the resistivity about $10^{-1}\Omega-cm$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.586-589
• /
• 2004

In this study, AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. The electrical, optical properties and crystalline of AZO thin film with thickness have been investigated. The thickness, transmittance, crystalline and electrical properties of AZO thin film were measured by a-step, UV-VIS spectrometer, hall effect measurement system, XRD and four-point probe, respectively. As a result, AZO thin film deposited with the transmittance over 80% and the resistivity about $10^{-4}\;\Omega-cm$.

• 한국세라믹학회지
• /
• 제50권6호
• /
• pp.551-556
• /
• 2013

AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition and the films were characterized by changing the deposition conditions. In particular, we investigated the optimal conditions for the application of a heat sinking plane AlN thin film. Epitaxial AlN films were deposited on sapphire ($c-Al_2O_3$) single crystals by pulsed laser deposition (PLD) with an AlN target. AlN films were deposited at a fixed pressure of $2{\times}10^{-5}$ Torr, while the substrate temperature was varied from 500 to $700^{\circ}C$. According to the experimental results of the growth temperature of the thin film, AlN thin films were confirmed with a highly c-axis orientation, maximum grain size, and high thermal conductivity at $650^{\circ}C$. The thermal conductivity of the AlN thin film was found to increase compared to bulk AlN near the band gap value of 6.2 eV.

• 대한치과보철학회지
• /
• 제30권4호
• /
• pp.481-492
• /
• 1992

Author measured the bonding strength between Dental Porcelain and Nonprecious Dental Alloy and analyzed diffusion Phenomena at the interfaceby by Auger electron spectroscopy and also Electron spectroscopy for Chemical Analysis. The each specimen was sputtered with Al, Cr, In and Sn. 1. Ni whic is the main element of the matris of dental nonprecious alloy diffuse more than the other element and the Ni diffusion rate of each specimen was well coordinated with the bonding strength of each. 2. The Sn thin film suppress the diffusion rate of Ni of matrix into the Dental Porcelain than the In or Cr thin films. 3. The Al thin film suppress the diffusion rate of Ni than the Sn thin film. 4. The main coponent of dental porcelain : Al, Si, Mo diffused into the matrix of alloy. It means that the each element of dental alloy and dental porelain diffused into the each other part.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2009년도 추계학술대회 논문집
• /
• pp.349-349
• /
• 2009

High quality ZnO:Al films were prepared on glass substrates by in-line RF magnetron sputtering and their surface morphologies were modified by wet-etching process in dilute acid solution to improve optical properties for application to silicon thin film solar cells as front electrode. The as-deposited films show a strong preferred orientation in [001] direction under our experimental conditions. A low resistivity below $5{\times}10^{-4}{\Omega}{\cdot}cm$ and high optical transmittance above 80% in a visible range are achieved in the films deposited at optimized conditions. After wet-etching, the surface morphologies of the films are changed dramatically depending on the deposition conditions, especially working pressure. The optical properties such as total/diffuse transmittance, haze and angular resolved distribution of light are varied significantly with the surface morphology feature, whereas the electrical properties are seldom changed. The cell performances of silicon thin film solar cells fabricated on the textured films are also evaluated in detail with comparison of commercial $SnO_2$:F films.

• 한국전기전자재료학회논문지
• /
• 제31권5호
• /
• pp.273-277
• /
• 2018

This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed $Al_2O_3$ diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed $Al_2O_3$ diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed $Al_2O_3$-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.

• 한국재료학회지
• /
• 제20권7호
• /
• pp.351-355
• /
• 2010

Transparent conducting aluminum-doped ZnO thin films were deposited using a sol-gel process. In this study, the important deposition parameters were investigated thoroughly to determine the appropriate procedures to grow large area thin films with low resistivity and high transparency at low cost for device applications. The doping concentration of aluminum was adjusted in a range from 1 to 4 mol% by controlling the precursor concentration. The annealing temperatures for the pre-heat treatment and post-heat treatment was $250^{\circ}C$ and 400-$600^{\circ}C$, respectively. The SEM images show that Al doped and undoped ZnO films were quite uniform and compact. The XRD pattern shows that the Al doped ZnO film has poorer crystallinity than the undoped films. The crystal quality of Al doped ZnO films was improved with an increase of the annealing temperature to $600^{\circ}C$. Although the structure of the aluminum doped ZnO films did not have a preferred orientation along the (002) plane, these films had high transmittance (> 87%) in the visible region. The absorption edge was observed at approximately 370 nm, and the absorption wavelength showed a blue-shift with increasing doping concentration. The ZnO films annealed at $500^{\circ}C$ showed the lowest resistivity at 1 mol% Al doping.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.351-351
• /
• 2010

Nanoscale patterning using an atomic force microscope tip induced scratching was systematically investigated in AI thin film on 4H-SiC. To identify the effects of the scratch parameters, including the tip loading force, scratch speed, and number of scratches, we varied each parameters and evaluated the major parameter which has intimate relationship with the scale of patterns. In this work, we present the successful demonstration of nano patterning of Al thin film on a 4H-SiC substrate using an AFM scratching and evaluated the scratch parameters on Al/4H-SiC.

• 반도체디스플레이기술학회지
• /
• 제21권1호
• /
• pp.67-70
• /
• 2022

In order to prevent water vapor and oxygen permeation in the organic light emitting diodes (OLED), Al₂O₃ thin-film encapsulation (TFE) technology were investigated. Atomic layer deposition (ALD) method was used for making the Al₂O₃ TFE layer because it has superior barrier performance with advantages of excellent uniformity over large scales at relatively low deposition temperatures. In this study, the thickness of the Al₂O₃ layer was varied by controlling the numbers of the unit pulse cycle including Tri Methyl Aluminum(Al(CH₃)₃) injection, Ar purge, and H₂O injection. In this case, several process parameters such as injection pulse times, Ar flow rate, precursor temperature, and substrate temperatures were fixed for analysis of the effect only on the thickness of the Al₂O₃ layer. As results, at least the thickness of 39 nm was required in order to obtain the minimum WVTR of 9.04 mg/m²day per one Al₂O₃ layer and a good transmittance of 90.94 % at 550 nm wavelength.