• Korean Journal of Materials Research
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• v.27 no.8
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• pp.397-402
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• 2017

We used an etching process to control the line-width of screen printed Ag paste patterns. Ag paste was printed on anodized Al substrate to produce a high power LED. In general, Ag paste spreads or diffuses on anodized Al substrate in the process of screen printing; therefore, the line-width of the printed Ag paste pattern increases in contrast with the ideal line-width of the pattern. Smudges of Ag paste on anodized Al substrate were removed by neutral etching process without surface damage of the anodized Al substrate. Accordingly, the line-width of the printed Ag paste pattern was controlled as close as possible to the ideal line-width. When the etched Ag paste pattern was used as a seed layer for electroless Ni plating, the line width of the plated Ni film was similar to the line-width of the etched Ag paste pattern. Finally, in pattern formation by Ag paste screen printing, we found that the accuracy of the line-width of the pattern can be effectively improved by using an etching process before electroless Ni plating.

• Laser Solutions
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• v.3 no.2
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• pp.25-33
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• 2000

One of perspective direction of microfabrication is direct laser writing technology that allows to create metal, semiconductive and dielectric micropatterns on substrate surface. In this work, a two step method, the combination of seed forming process, in which metallic Al seed was selectively generated on AlN ceramic substrate by direct writing technique using a pulsed Nd : YAG laser and subsequent electroless Ni plating on the activated Al seed, was presented. The effects of laser parameters such as pulse energy, scanning speed and pulse frequency on shape of Alseed and conductor line after electroless Ni plating were investigated. The nature of the laser activated surface is analyzed from XPS data. The line width of this metallic Al and Ni is analyzed using SEM. As a results, Al seed line with 24㎛ width and 100㎛ isolated line space is obtained. Finally, laser direct writing can be applied in the field between thin and thick film technique in electronic industry.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.3
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• pp.492-499
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• 2011

This paper describes that the evaluation on operation practicality of Al conductor cable will be used instead of Cu conductor cable. Analysis is divided into two kinds of cases as transmission and distribution. To evaluate that Al conductor line has the insulation strength indeed safely, various analysis and calculation such as single line-to-ground fault current, lightning surge and allowance current were carried. Model was established based on real combined transmission and distribution is being used in utility with EMTP. The analysis results on Al and Cu conductor line were compared each other. It was proved that Al conductor line can be operated instead of Cu conductor line without special insulation problem in transmission and distribution, in electrical view point such as overvoltage and allowance current.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.233-236
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• 2000

The structural, electrical and chemical characteristics of Al alloy thin film with low impurity concentrations AlW deposited by using dc magnetron sputtering deposition are investigated for the applications as data bus line in the TFT-LCD panel. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at $300^{\circ}C$ for 20 min.. Moreover, the resistivity of AlW does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AlW is found to be hillock free. And for investigating chemical attack in TFT-LCD etching processing the electric potential of AlW alloy for Ag/AgCl were investigated by cyclic voltammetry. When W wt.% of AlW alloy was higher than about 3%, the electric potential of AlW was more positive than ITO's. Therefore AlW alloy thin film can be propose to use for data bus line.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.31-35
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• 1999

In this paper, the lifetime dependence as a function of the line length of Al-1%Si thin film interconnections due to electromigration in semiconductor devices was studied. Al-1%Si thin film interconnections with a pattern of straight type were formed by using a standard photolithography process. The test patterns manufactured have line lengths in the range of 100 to 1600 $mu extrm{m}$. Al-1%Si thin film interconnections with Ti underlayers showed longer lifetime than those without Ti underlayers. Ti underlayers are believed to improve electromigration resistance resulting in a longer lifetime in Al-1%Si thin film interconnections. The dependence of lifetime on the line length in Al-1%Si/Ti thin film interconnections shows a saturation tendency near 800 $\mu\textrm{m}$ line length.

• Laser Solutions
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• v.16 no.3
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• pp.1-10
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• 2013

In this study, Al-Si coated boron steel(1.2 mm) were laser welded by $CO_2$ laser and hot-stamping was applied to the laser joints. Tensile properties and microstructures of the joints were investigated before and after hot-stamping. Tensile and yield strengths of the as welded specimen similar with base metal and fracture occurred base metal of boron steel. Although, in case of heat treated specimen, fracture occurred fusion zone that Al segregated zone near the bond line. These could be explained by the existence of ferrite, in the Al segregated zone near the bond line and base metal of boron steel. Before hot-stamping, hardness of base metal is lower than fusion zone and heat affected zone in spite of exist Al segregation zone($Fe_3$(Al,Si)). So fracture occurred base metal. Although, after hot-stamping, microstructure of base metal and welds zone transformed to martensite and bainite except in Al segregation zone near the bond line that $Fe_3$(Al,Si) transformed to a-ferrite. So fracture occurred Al segregation zone near the bond line.

• Journal of Microbiology and Biotechnology
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• v.13 no.2
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• pp.217-224
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• 2003

Previously, we developed a CHO cell line (CHO-OTC1-Al9) that expresses the first two enzymes in the urea cycle and exhibits a higher ammonia-removing ability and faster growth rate than a vector-controlled CHO cell line (CHO-neo-5). The current study was undertaken to develop a cell line with an ammonia-removing ability higher than the cell line developed previously. To accomplish this, CHO cell lines expressing the first three, first four, or all five enzymes of the urea cycle were constructed using a stable transfection method. Finally, the CHO-AS-16, CHO-AL-19, and CHO-Arg-11 cell lines expressing the first three, first four, and all five enzymes of the urea cycle, respectively, were selected and found to exhibit higher ammonia-removing ability than the CHO-OTC1-Al9 cell line. Among the three selected cell lines, CHO-AL-19 showed the highest ammonia-removing ability and highest cell viability at a higher cell density, with 40% and 15% lower ammonia concentration in the, culture media than that of CHO-neo-5 and CHO-OTC1-A19 cell lines, respectively. CHO-AL-19 also showed 44% and 10% higher cell viability than the CHO-neo-5 and CHO-OTC-Al9 cell lines, at a higher cell density, respectively. The ammonia concentrations in the culture media were expressed as the ammonia concentration/cell, and the CHO-AL-19 cells revealed 45-60% and 20% lower ammonia concentration/cell than the CHO-neo-5 and CHO-OTC1-Al9 cells, respectively.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.46-49
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• 2016

A thin film transistor (TFT) has been fabricated using the amorphous 0.5 wt% Si doped zinc-tin-oxide (a-0.5 SZTO) with different electrodes made of either aluminium (Al) or titanium/aluminium(Ti/Al). Contact resistance and total channel resistance of a-0.5SZTO TFTs have been investigated and compared using the transmission line method (TLM). We measured the total resistance of 1.0×10² Ω/cm using Ti/Al electrodes. This result is due to Ti, which is a material known for its adhesion layer. We found that the Ti/Al electrode showed better contact characteristics between the channel and electrodes compared with that made of Al only. The former showed a less contact and total resistance. We achieved high performance of the TFTs characteristic, such as Vth of 2.6 V, field effect mobility of 20.1 cm² V⁻¹s⁻¹, S.S of 0.9 Vdecade⁻¹, and on/off current ratio of 9.7×10⁶ A. It was demonstrated that the Ti/Al electrodes improved performance of TFTs due to enhanced contact resistance.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.245-248
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• 1999

Recently low resistance of gate line or data line is required for large screen size TFT-LCD panels. As a result, lower resistance Al-alloy is currently reviewed extensively and the resistivity is required smaller than 10$\mu\Omega$cm. In this paper, Al-Nd and Al-Zr thin film were deposited on glass substrated by D.C. magnetron sputtering system under various condition. Its properties were characterized by SEM, AFM, XRD and 4-point-probe. The optimal condition was $120^{\circ}C$, 125W, 0.4Pa, 30sccm (Ar) and $350^{\circ}C$, 20min. annealing. At that condition the resistivity of Al-Zr(0.9%wt.) is about 4$\mu\Omega$cm.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.58-58
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• 2000

Recently low resistance of bus line is required for large screen size RFT-CLD panels. As a result, lower resistance Al-alloy is currently reviewed extensively. The resistivity is required smaller than 10$\mu$$\Omega$cm and high resistance of chemical attack is required. In this paper, Al-W thin film were deposited on glass substrates by D.C magnetron sputtering system under various condition for high chemical resistance. Its properties were characterized by SEM, AFM, XRD, 4-point-probe, and cyclic voltammertry. The optimal condition of Al-W was 10$0^{\circ}C$, 100W, 0.4Pa, 23sccm(Ar) and 35$0^{\circ}C$, 20min. annealing. At that condition the resistivity of Al-W(3 wt.%) was about 11$\mu$$\Omega$cm. And when wt.% of W in Al-W alloy was higher than about 4%, Al-W alloy thin film has high chemical resistance.