characteristics of Al-Nd and Al-Zr thin film for TFT-FCD by DC magnetron sputtering system

Dc magnetron sputtering system을 이용한 TFT-LCD를 위한 Al-Nd와 Al-Zr 박막 특성에 관한 연구

Recently low resistance of gate line or data line is required for large screen size TFT-LCD panels. As a result, lower resistance Al-alloy is currently reviewed extensively and the resistivity is required smaller than 10$\mu\Omega$cm. In this paper, Al-Nd and Al-Zr thin film were deposited on glass substrated by D.C. magnetron sputtering system under various condition. Its properties were characterized by SEM, AFM, XRD and 4-point-probe. The optimal condition was $120^{\circ}C$, 125W, 0.4Pa, 30sccm (Ar) and $350^{\circ}C$, 20min. annealing. At that condition the resistivity of Al-Zr(0.9%wt.) is about 4$\mu\Omega$cm.