• 한국재료학회지
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• 제14권7호
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• pp.494-499
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• 2004

The structural, electrical and optical properties of GaN epilayers grown on various ion-implanted sapphire(0001) substrates by MOCVD were investigated. Sapphire substrates have been widely adopted to grow high quality GaN epilayer despite the large differences of lattice constant and thermal expansion coefficient between them. So, GaN or AlN buffer layer and pre-treatment was indispensably introduced before the GaN epilayer growth. The ion-implanted substrate's surface had decreased internal free energies during the growth of the ions implanted sapphire(0001) substrates. The crystal and optical properties of GaN epilayers grown in ions implanted sapphire(0001) substrate were improved. Also, excessively roughened and modified surface by ions degraded the GaN epilyers. Not only the ionic radius but also the chemical species of implanted sapphire(0001) substrates could improve the properties of GaN epilayers grown by MOCVD. This result implies that higher quality of GaN epilayers was achieved by using ion-implanted sapphire(0001) substrate with various ions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.22-25
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• 2001

A thyristor switch circuit for capacitor discharge application, of which the equivalent circuit includes a resistor between cathode and gate of a reverse-conducting thyristor and an avalanche diode anti-parallel between its anode and gate to set thyristor tum-on voltage, is monolithically integrated by planar process with AVE double-implantation method. To ensure a lower breakdown voltage of the avalanche diode for thyristor tum-on than the break-over voltage of the thyristor, $p^+$ wells on thyristor p base layer are made by boron implantation/drive-in for a steeper doping profile with higher concentrations while rest p layers of thyristor and free-wheeling diode parts are formed with Al implantation/drive-in for a doping profile of lower steepness. The free-wheeling diode part is isolated from the thyristor part by formation of separated p-well emitter for suppressing commutation between them, which is achieved during the formation of thyristor p-base layer.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.751-755
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• 2009

We proposed circular AlGaN/GaN schottky barrier diode, which has no mesa structure near the current path. Proposed device showed low leakage current of 10 nA/mm at -100 V while that of the rectangular device was 34 nA/mm at the same condition. Proposed circular AIGaN/GaN SBD showed high forward current of 88.61 mA at 3,5 V while that of the conventional device was 14.1 mA at the same condition.

• 한국의학물리학회지:의학물리
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• 제5권2호
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• pp.3-12
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• 1994

$Na^{+}$ 이온을 주입시킨 후, $^{17}$ Cs 감마선으로 조사된 $Al_2$O$_3$ 및, $Na^{+}$ 이 주입된 $Al_2$O$_3$의 열자극 발광을 340K～620K의 온도 구간에서 측정하였다. $Na^{+}$ 이온을 주입시킨 후, $^{137}$Cs 감마선으로 조사된 $Al_2$O$_3$의 열자극 발광 곡선은 415K, 452K, 508K, 및 568K에서 TL peak를 가지는 곡선으로 분해되었다. $Na^{+}$ 이온 주입 후 $^{137}$Cs 감마선 조사된 $Al_2$O$_3$는, $Na^{+}$ 이온만 주입된 $Al_2$O$_3$와 $^{137}$Cs 감마선 만 조사된 $Al_2$O$_3$보다 각각 defect traps에 구속된 전하운반체의 밀도와 defect traps의 밀도가 증강되었기 때문에, $Na^{+}$ 이온 주입 후 $^{137}$Cs 감마선 조사된 $Al_2$O$_3$보다 각각 20배, 5배 증가되었다. 주입 이온 선량과 에너지의 증가는 defect trap 밀도의 증가를 초래함으로, 이온 주입된 시료의 열자극 발광 세기는 이온의 선량과 에너지에 의존함을 알았다. 입사 이온의 질량이 증가함에 따라 열자극 발광 세기는 기하급수적으로 급격히 감소하였고, 이것은 열자극 발광 세기가 결함 생성률 뿐만 아니라, 이온의 주입 깊이에도 밀접한 관계가 있음을 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1997년도 제12회 학술발표회 논문개요집
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• pp.196-196
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• 1997

• Journal of Chest Surgery
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• 제17권1호
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• pp.125-128
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• 1984

The management of the exposed cardiac pacemaker or its lead is a new challenge to the plastic surgeon. This complication is not rare. Coburn et al. [1972] reported less than 5 percent, but Sowton et al. [1974] showed that over a period of 19 years, in a series of 372 patients, the pacing system had to be removed because of local wound breakdown or infection in 10 percent of the cases. The methods used to treat exposure may vary from removal and re-introduction at anterior site to the rotation of local flaps to cover the exposed pacemaker. Recently we have experienced 6 times of migration and recurrent skin ulcerations without pyogenic infection overlying the pacemaker in one patient. We developed a new technique, anchoring the pacemaker to the clavicle by a wire through the hole of clavicle and by creating a pocket under the pectoralis major muscle. Then we would like to emphasize this operating method could be choice of treatment to prevent the migration of pacemaker and the ulceration of skin when complication of implantation of pacemaker is occurred.

• 전자공학회논문지
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• 제52권11호
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• pp.29-35
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• 2015

다결정 실리콘으로 구성된 금속-반도체-금속(MSM) 구조의 광검출기의 광 응답 특성을 개선시키기 위해 중수소를 사용한 후속 공정을 행하였다. 다결정 실리콘 내 중수소 결합 형성 방법에 따른 광검출기의 특성 변화를 전기적 측정을 통해 비교하였다. 광검출기는 Schottky 접합 특성을 갖기 위해 Al/Ti 전극 금속이 사용되었다. 본 연구에서는 광 흡수 영역인 다결정 실리콘 내에 중수소 결합을 형성시켜 다결정 실리콘 내에 존재하는 결함을 효과적으로 passivation하여 결함밀도를 감소시키고자 한다. 후속 중수소 공정으로는 열처리 확산 방법과 이온 주입 방법을 각각 사용하였다. 중수소 열처리 확산 방법을 통해서 중수소는 다결정 실리콘의 표면 근처에 대부분 존재하였다. 다결정 실리콘의 표면은 광 흡수가 일어나는 부분이므로 중수소의 결합을 통해 광 응답 특성이 개선됨을 확인하였다. 중수소 이온 주입 방법을 통해서는 중수소를 다결정 실리콘 내부로 쉽게 분포시킬 수 있지만 다결정 실리콘 표면 근처에 결함을 만들 수 있어 광 응답 특성을 저하시키는 원인이 되었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.165-165
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• 2003

The growth of GaN on Si is of great interest due to the several advantages low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate [1]. In this work, the properties of GaN overlayer grown on ion implanted Si(111)and bare Si(111) have been investigated. Si(111) surface was treated ion implantation with 60KeV and dose 1${\times}$10$\^$16//$\textrm{cm}^2$ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 15-30 minutes at 1100$^{\circ}C$ with metal organic chemical vapor deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction (XRD), Scanning electron microscope (SEM) Photoluminescence (PL) at room temperature and Hall measurement The results showed that the GaN on ion implanted Si(111) markedly affected to the structural, optical and electrical characteristic of GaN layers.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1229_1230
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• 2009

$SiO_2$ 패시베이션 층에 As+ 이온을 주입한 1.2 kV급 AlGaN/GaN 쇼트키 장벽 다이오드( Schottky Barrier Diode, SBD )를 제작하였다. 주입된 As+ 이온들은 역방향 바이어스에서 공핍 영역의 곡률을 변화 시켰고, 이로 인해 항복 전압이 증가하고 누설 전류가 감소하였다. 제안된 소자의 항복전압이 1204 V 이었고, 기존 소자의 항복전압은 604 V 이었다. 캐소드 전압이 100 V일 때 제안된 소자의 누설전류는 21.2 nA/mm 이었고, 같은 조건에서 제안된 소자는 $80.3{\mu}A/mm$ 이었다. 주입된 As+ 양이온은 이차원 전자 가스( Two-Dimensional Electron Gas, 2DEG )에 전자를 유도했고, 채널의 농도가 미세하게 증가하였다. 따라서 순방향 전류가 증가하였다.

• Journal of Magnetics
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• 제13권1호
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• pp.19-22
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• 2008

ZnO nanotips, grown on c-$Al_2O_3$ and quartz, were implanted variously with 200 keV Fe or Mn ions to a dose level of $5{\times}10^{16}cm^{-2}$. The magnetic properties of these samples were measured using a superconducting quantum interference device (SQUID) magnetometer. Fe-implanted ZnO nanotips grown on c-$Al_2O_3$ showed a coercive field width of 209 Oe and a remanent field of 12% of the saturation magnetization ($2.3{\times}10^{-5}emu$) at 300K for a sample annealed at $700^{\circ}C$ for 20 minutes. The field-cooled and the zero-field-cooled magnetization measurements also showed evidence of ferromagnetism in this sample with an estimated Curie temperature of around 350 K. The Mn-implanted ZnO nanotips grown on c-$Al_2O_3$ showed superparamagnetism resulting from the dominance of a spin-glass phase. The ZnO nanotips grown on quartz and implanted with Fe or Mn showed signs of ferromagnetism, but neither was consistent.