Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2009.07a
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- Pages.1229_1230
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- 2009
1.2KV AlGaN/GaN Schottky Barrier Diode Employing As+ Ion Implantation on $SiO_2$ Passivation layer
항복전압 향상을 위해 As+ 이온을 주입한 AlGaN/GaN 쇼트키 장벽 다이오드
- Kim, Min-Ki (Seoul National University) ;
- Lim, Ji-Yong (Seoul National University) ;
- Choi, Young-Hwan (Seoul National University) ;
- Kim, Young-Shil (Seoul National University) ;
- Seok, O-Gyun (Seoul National University) ;
- Han, Min-Koo (Seoul National University)
- Published : 2009.07.14
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