• 제목/요약/키워드: Al droplet

검색결과 53건 처리시간 0.031초

NaCl과 NaBr수용액에서 적층가공으로 제조된 Ti-6Al-4V 합금의 공식 저항성 비교 (Comparing Resistances to Pitting Corrosion of Additive Manufactured Ti-6Al-4V Alloys in NaCl and NaBr Aqueous Solutions)

  • 서동일;이재봉
    • Corrosion Science and Technology
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    • 제18권3호
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    • pp.110-116
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    • 2019
  • Resistances to pitting corrosion of additive manufactured (AM) Ti-6Al-4V alloys in 0.6 M NaBr and 0.6 M NaCl aqueous solutions were compared using micro-droplet cell techniques. With respect to the pitting corrosion resistance, this study focused on two different types of halide anions in aqueous solutions, i.e. $Br^-$ and $Cl^-$. The differences between $Br^-$ and $Cl^-$ halide anions for breakdown on passive films of AM Ti-6Al-4V alloy were explained using Langmuir adsorption model with their equilibrium adsorption coefficients. The results of the analysis showed that the lower resistance to pitting potential of AM Ti-6Al-4V alloy in $Br^-$ aqueous solution was attributed to the higher equilibrium adsorption coefficient of Br-. In addition, micro-electrochemical test results showed that the pitting corrosion resistance of dark grains in additive manufactured Ti-6Al-4V alloy was lower as compared to that of bright grains due to the larger volume of ${\alpha}^{\prime}$ phase that caused the susceptibility to pit initiation.

전도성 수적에 의한 Al2O3/실리콘 고무 나노컴포지트의 DC 연면 방전 특성 (The DC Creepage Discharge Characteristics of Al2O3/Silicone Rubber Nanocomposites in presence of a water droplet)

  • 박지성;김지호;서청원;권정훈;임기조
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2015년도 제46회 하계학술대회
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    • pp.1141-1142
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    • 2015
  • 실리콘 고무는 옥외용 폴리머 애자 또는 부싱 등에 주로 사용되고 있으며, 이에 대한 연구가 많이 진행되어 지고 있다. 최근에는 나노 기술이 발달함에 따라 전기 재료에 나노 사이즈의 필러를 첨가하여 재료의 특정 특성들을 향상시키는 연구들이 진행되어 지고 있다. 본 논문에서는 전기적인 성능을 향상시키고자 나노 사이즈의 $Al_2O_3$를 첨가한 상온 경화형 실리콘 고무에 대한 연구를 진행하였으며, DC 전계와 오염 상황 하에서 연면 파괴 강도를 측정하였으며, 접촉각과 표면 저향률을 측정하였다. 실험 결과, 필러 함량이 증가할수록 연면 절연 파괴 강도와 표면 저항률은 증가하였으며 접촉각은 감소하였다. 또한, 일정 함량 이상에서는 연면 절연 파괴 강도와 표면 저항율이 감소하는 것으로 나타났다.

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Effect of Al and Mg Contents on Wettability and Reactivity of Molten Zn-Al-Mg Alloys on Steel Sheets Covered with MnO and SiO2 Layers

  • Huh, Joo-Youl;Hwang, Min-Je;Shim, Seung-Woo;Kim, Tae-Chul;Kim, Jong-Sang
    • Metals and materials international
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    • 제24권6호
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    • pp.1241-1248
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    • 2018
  • The reactive wetting behaviors of molten Zn-Al-Mg alloys on MnO- and amorphous (a-) $SiO_2$-covered steel sheets were investigated by the sessile drop method, as a function of the Al and Mg contents in the alloys. The sessile drop tests were carried out at $460^{\circ}C$ and the variation in the contact angles (${\theta}_c$) of alloys containing 0.2-2.5 wt% Al and 0-3.0 wt% Mg was monitored for 20 s. For all the alloys, the MnO-covered steel substrate exhibited reactive wetting whereas the $a-SiO_2$-covered steel exhibited nonreactive, nonwetting (${\theta}_c>90^{\circ}$) behavior. The MnO layer was rapidly removed by Al and Mg contained in the alloys. The wetting of the MnO-covered steel sheet significantly improved upon increasing the Mg content but decreased upon increasing the Al content, indicating that the surface tension of the alloy droplet is the main factor controlling its wettability. Although the reactions of Al and Mg in molten alloys with the $a-SiO_2$ layer were found to be sluggish, the wettability of Zn-Al-Mg alloys on the $a-SiO_2$ layer improved upon increasing the Al and Mg contents. These results suggest that the wetting of advanced high-strength steel sheets, the surface oxide layer of which consists of a mixture of MnO and $SiO_2$, with Zn-Al-Mg alloys could be most effectively improved by increasing the Mg content of the alloys.

Effect of Working Pressure and Substrate Bias on Phase Formation and Microstructure of Cr-Al-N Coatings

  • Choi, Seon-A;Kim, Seong-Won;Lee, Sung-Min;Kim, Hyung-Tae;Oh, Yoon-Suk
    • 한국세라믹학회지
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    • 제54권6호
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    • pp.511-517
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    • 2017
  • With different working pressures and substrate biases, Cr-Al-N coatings were deposited by hybrid physical vapor deposition (PVD) method, consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) processes. Cr and Al targets were used for the arc ion plating and the sputtering process, respectively. Phase analysis, and composition, binding energy, and microstructural analyses were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM), respectively. Surface droplet size of Cr-Al-N coatings was found to decrease with increasing substrate bias. A decrease of the deposition rate of Cr-Al-N films was expected due to the increase of substrate bias. The coatings were grown with textured CrN phase and (111), (200), and (220) planes. X-ray diffraction data show that all Cr-Al-N coatings shifted to lower diffraction angles due to the addition of Al. The XPS results were used to determine the $Cr_2N$, CrN, and (Cr,Al)N binding energies. The compositions of the Cr-Al-N films were measured by XPS to be Cr 23.2~36.9 at%, Al 30.1~40.3 at%, and N 31.3~38.6 at%.

GaAs/AlGaAs 양자점구조에서 표면전기장에 관한연구

  • 김종수;조현준;김정화;배인호;김진수;김준오;노삼규;이상준;임재영
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.158-158
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    • 2010
  • 본 연구에서는 분자선 박막성장 장비를 (MBE) 이용하여 droplet epitaxy 방법으로 성장시킨 GaAs/AlGaAs 양자점구조의 표면전기장변화에 관하여 photoreflectance spectroscopy (PR)를 이용하였다. 본 실험에 사용된 GaAs/AlGaAs 양자점 구조는 undoped-GaAs (001) 기판을 위에 성장온도 $580^{\circ}C$에서 GaAs buffer layer를 100 nm 성장 후 장벽층으로 AlGaAs을 100 nm 성장하였다. AlGaAs 장벽층을 성장한 후 기판온도를 $300^{\circ}C$로 설정하여 Ga을 3.75 원자층를 (ML) 조사하여 Ga drop을 형성하였다. Ga drop을 GaAs 나노구조로 결정화시키기 위하여 $As_4$를 beam equivalent pressure (BEP) 기준으로 $1{\times}10^{-4}$ Torr로 기판온도 $150^{\circ}C$에서 조사하였다. 결정화 직후 RHEED로 육각구조의 회절 페턴을 관측하여 결정화를 확인하였다. GaAs 나노 구조를 성장한 후 AlGaAs 장벽층을 성장하기위해 10 nm AlGaAs layer는 MEE 방법을 이용하여 $150^{\circ}C$에서 저온 성장 하였으며, 저온성장 후 기판온도를 $580^{\circ}C$로 설정하여 80 nm의 AlGaAs 층을 성장하고 최종적으로 GaAs 10 nm를 capping layer로 성장하였다. 저온성장 과정에서의 결정성의 저하를 보상하기위하여 MBE 챔버내에서 $650^{\circ}C$에서 열처리를 수행하였다. GaAs/AlGaAs 양자점의 광학적 특성은 photoluminescence를 이용하여 평가 하였으며 780 nm 근처에서 발광을 보여 주었다. 특히 PR 실험으로부터 시료의 전기장에 의한 Franz-Keldysh oscillation (FKO)의 변화를 관측하여 GaAs/AlGaAs 양자점의 존재에 의한 시료의 표면에 형성되는 표면전기장을 측정하였다. 또한 시료에 형성된 전기장의 세기를 계산하기위해 PR 신호로부터 fast Fourier transformation (FFT)을 이용하였다. 특히 온도의 존성실험을 통하여 표면전기장의 변화를 관측 하였으며 양자구속효과와 관련성에 대하여 고찰 하였다.

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알루미늄 박판에 대한 AC 펄스 MIG 용접에서 극성가변의 효과 (The effect of variable polarity on AC pulse Welding for sheet Al metal)

  • 공현상;임성룡;김기정;조상명
    • 한국마린엔지니어링학회:학술대회논문집
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    • 한국마린엔지니어링학회 2001년도 추계학술대회 논문집(Proceeding of the KOSME 2001 Autumn Annual Meeting)
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    • pp.88-91
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    • 2001
  • New type of vehicles made from thin aluminum alloy are under rapid development and some product are already on the market, but when welding sheet metal joint of aluminum alloy, the main problem are burn-through by the high heat input. The purpose of this study, it is to prevent the burn-through and to shallow penetration that AC pulse welding has diminish the penetration and to lower the droplet temperature at Al sheet metal welding. In this study, we observed the bead appearance and whether it was appeared burn through or not , as the variation of the root gap in the lap and butt-joint welding process.

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액체연료 액적군 의 비정상 집단연소 (Non-Steady Group Combustion of Liquid Fuel Droplets)

  • 김호영
    • 대한기계학회논문집
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    • 제8권6호
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    • pp.544-552
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    • 1984
  • 본 연구에서는 Chiu et al.의 집단연소이론에 대한 비정상집단연소모델(non- steady group combustion model)을 개발, 정지된 액적군에서 초기 액적들의 분포상태, 즉 초기액적들의 크기, 수밀도 및 액적군의 크기에 따른 연소시간, 연소형태 및 특성 과 화염의 성질등을 비정상 상태하에서 이론적인 모델을 통하여 고찰한다.

Ink-jet 프린팅용 CoAl2O4 고화도 나노 무기 잉크 제조 및 프린팅 특성평가 (Synthesis and Characterization of CoAl2O4 Glazed Blue Ceramic Ink for Ink-Jet Printing)

  • 이기찬;윤종원;김진호;황광택;한규성
    • 한국재료학회지
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    • 제24권2호
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    • pp.73-80
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    • 2014
  • Ink-jet printing technology has been widely attractive due to its facility for direct and fine printing on various substrates. Recent studies have focused on expanding the application of ink-jet printing technology from general consumer use and design companies to the prototype production of precision parts and parts manufacturing. The use of ink-jet printing technology in decorated tableware, tiles, and other ceramic products also has many advantages. The printing process is fast and can be adaptable to various kinds of objects because there is no direct contact point between the printer and the substrates to be printed. For application to ceramic product decoration, inks containing highly dispersed inorganic nano-pigments are required. Here we report the synthesis and characterization of blue $CoAl_2O_4$ nanopigment for ink-jet printing. Blue ceramic ink based on the obtained $CoAl_2O_4$ pigment was prepared by dissolving $CoAl_2O_4$ pigment in a mixed solution of ethylene glycol and ethanol with volume ratios of 7:3 and 8:2, respectively, to obtain the appropriate viscosity for ink-jet printing. The ink solution contained 15 wt% of $CoAl_2O_4$ pigment and Cetyltrimethyl ammonium bromide(CTAB) and Sodium dodecyl sulfate(SDS) as dispersive agents. The prepared blue ceramic ink was stably jetted and formed a sphere-shaped droplet from an ink-jet printer.

열처리 조건에 따른 Al-Si-Mg계 합금의 표면 젖음성 영향 (Effect of Heat Treatment on Surface Wettability of Al-Si-Mg Alloy)

  • 장호성;최유진;이승원;전종배;박성혁;신선미
    • 한국표면공학회지
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    • 제51권6호
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    • pp.337-343
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    • 2018
  • The present study investigated the effect of heat treatment process on the surface wettability of an Al-Si-Mg alloy. After solution-treated at $525^{\circ}C$ and aged at $160^{\circ}C$, the alloy showed high hardness due to the formation of precipitates. In addition, surface wettability was improved in such a way that the contact angle of distilled water droplet on the flat surface decreased to $37.6{\sim}42.1^{\circ}$ after the heat treatment. The surface energy predicted by Owens-Wendt equation also confirmed the increase of surface energy after the heat-treatment. However, when the surface roughness increased, the positive effect of the heat treatment on wettability diminished due to the geometrical factors of the rough surface.

플라즈마분자선에피탁시법을 이용한 사파이어 기판 위 질화알루미늄 박막의 에피탁시 성장 (Growth of Epitaxial AlN Thin Films on Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy)

  • 이효성;한석규;임동석;신은정;임세환;홍순구;정명호;이정용
    • 한국재료학회지
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    • 제21권11호
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    • pp.634-638
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    • 2011
  • We report growth of epitaxial AlN thin films on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. To achieve two-dimensional growth the substrates were nitrided by nitrogen plasma prior to the AlN growth, which resulted in the formation of a two-dimensional single crystalline AlN layer. The formation of the two-dimensional AlN layer by the nitridation process was confirmed by the observation of streaky reflection high energy electron diffraction (RHEED) patterns. The growth of AlN thin films was performed on the nitrided AlN layer by changing the Al beam flux with the fixed nitrogen flux at 860$^{\circ}C$. The growth mode of AlN films was also affected by the beam flux. By increasing the Al beam flux, two-dimensional growth of AlN films was favored, and a very flat surface with a root mean square roughness of 0.196 nm (for the 2 ${\mu}m$ ${\times}$ 2 ${\mu}m$ area) was obtained. Interestingly, additional diffraction lines were observed for the two-dimensionally grown AlN films, which were probably caused by the Al adlayer, which was similar to a report of Ga adlayer in the two-dimensional growth of GaN. Al droplets were observed in the sample grown with a higher Al beam flux after cooling to room temperature, which resulted from the excessive Al flux.