• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.105-107
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• 2002

The device characteristics and the interface electronic structures of organic light-emitting devices based on tris-(8-hydroxyquinoline)aluminum were investigated with $Al/CaF_2$, Al/LiF, and Al-only cathodes. Similar to the Al/LiF cathode, the $Al/CaF_2$ cathode greatly improved the performance of the device over Al-only cathode. However, a photoelectron spectroscopy study revealed that despite the performance improvement, the evolution of the new peaks during $Al/CaF_2$ cathode formation closely resembled those of the Al-only cathode rather than the Al/LiF cathode.

• Journal of the Korean institute of surface engineering
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• v.48 no.4
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• pp.174-178
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• 2015

We studied emission characteristics for blue fluorescent dual-side emission OLED with Al cathode thickness variation. In the bottom emission OLED of Al cathode with 10, 15, 20, 25, 30, and 150 nm thickness, maximum luminance showed 36.1, 8,130, 9,300, 12,000, 13,000, and $12,890cd/m^2$, and maximum current efficiency showed 2, 8.8, 10, 10.5, 10.8, and 11.4 cd/A, respectively. The emission characteristics of the bottom emission seemed to be improved according to decrease of resistance as the thickness of Al cathode increase. In the top emission OLED of Al cathode with 10, 15, 20, 25, and 30 nm thickness, maximum luminance showed 4.3, 351, 131, 88.6, and $33.2cd/m^2$, and maximum current efficiency showed 0.23, 0.38, 0.21, 0.16, and 0.09 cd/A, respectively. It yielded the highest maximum luminance and maximum current efficiency in Al cathode thickness 15 nm. It showed a tendency to decrease as the thickness of Al cathode increase. The reason for this is due to decrease of transmittance with increasing of Al cathode thickness. The electroluminescent spectra of bottom and top emission OLED were not change.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.37-40
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• 2000

This paper has been studied on characteristics of organic light-emitting device with various cathode materials. These catode materials were Al：Li(5%), Al, Cu, CsF/Al. And in these devices, HTL(hole transfer layer) was TPD and EML(emitting layer) was Alq$\sub$3/. We studied the I-V characteristics for each device. And then, the turn-on voltage of device for Al-Li(5%), Al, Cu, CsF/Al cathode were 7, 9, 13, 3V respectively. So, the CsF/Al cathode is superior to other cathode materials for I-V characteristics.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.25-28
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• 2005

We have investigated the effects of hole-injection buffer layer in organic light-emitting diodes using poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate)(PEDOT:PSS) in a device structure of $ITO/PEDOT:PSS/TPD/Alq_{3}/cathode$. Polymer PEDOT:PSS buffer layer was made by spin casting method. Current-voltage, luminance-voltage characteristics and efficiency of device were measured at room temperature with a variation of cathode materials; Al, LiF/Al, LiAl, and Ca/Al. The device with LiF/Al cathode shows an improvement of external quantum efficiency approximately by a factor of ten compared to that of Al cathode only device. Our observation shows that cathode is important in improving the efficiency of the organic light-emitting diodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.14-16
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• 2008

Built-in voltage in organic light-emitting diodes was studied using modulated photocurrent technique ambient conditions. From the bias voltage-dependent photocurrent, built-in voltage of the device is determined. The applied bias voltage when the magnitude of modulated photocurrent is zero corresponds to a built-in voltage. Built-in voltage in the device is generated due to a difference of work function of the anode and cathode. A device was made with a structure of anode/$Alq_3$/cathode to study a built-in voltage. ITO was used as an anode, and Al and LiAl were used as a cathode. A layer thickness of Al and LiAl were 100nm. Obtained built-in voltage is about 1.0V in the Al layer was used as a cathode. The obatined built-in voltage is about 1.6V in the LiAl layer was used as a cathode. The result of built-in voltage is dependent of cathode. We can see that the built-in voltage increase up to 0.4V when the LiAl layer was used as the cathode. These results correspond to the work function of LiAl which is lower than that of Al. As a result, the barrier height for an electron injection from the cathode to the organic layer could be lowered when the LiAl was used as a cathode.

• Journal of Information Display
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• v.8 no.3
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• pp.5-10
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• 2007

Twin target sputtering (TTS) system with a configuration of vertically parallel facing Al targets and a substrate holder perpendicular to the Al target plane has been designed to realize a direct Al cathode sputtering on organic light emitting diodes (OLEDs). The TTS system has a linear twin target gun with ladder type magnet array for effective and uniform confinement of high density plasma. It is shown that OLEDs with Al cathode deposited by the TTS show a relatvely lower leakage current density $({\sim}1{\times}10^{-5}mA/cm^2)$ at reverse bias of -6V, compared to that ($1{\times}10^{-2}{\sim}10^{-3}$ $mA/cm^2$ at -6V) of OLEDs with Al cathodes grown by conventional DC magnetron sputtering. In addition, it was found that Al cathode films prepared by TTS were amorphous structure with nanocrystallines due to low substrate temperature. This demonstrates that there is no plasma damage caused by the bombardment of energetic particles. This indicates that the TTS system with ladder type magnet array could be useful plasma damage free deposition technique for direct Al cathode sputtering on OLEDs or flexible OLEDs.

• Journal of Electrochemical Science and Technology
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• v.7 no.4
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• pp.263-268
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• 2016

This study describes the effect of coating the $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ cathode surface with a homogeneous carbon layer produced by carbonization of polyvinylidene fluoride (PVDF) as a novel organic source. The phase integrity of the above cathode was not affected by the carbon coating, whereas its rate capability and cycling performance were enhanced. Similarly, the cathode thermal stability was also improved after coating, which additionally protected the cathode surface against the reactive electrolyte containing hydrofluoric acid (HF). The results show that coating the $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ cathode with carbon using the PVDF precursor is an effective approach to enhance its electrochemical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.475-476
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• 2005

Efficient electron injection is essential to achieve bright and efficient organic light-emitting diodes (OLEDs). In spite of high work function of Al, it is a common cathode because of its stability. In this paper, to overcome the poor electron injection in OLEDs with Al cathode, OLEDs with various composite cathodes were fabricated and investigated using a conventional OLEDs structure of indium tin oxide ITO/NPB(40 nm)/$Alq_3$(50 nm)/Al. composite cathodes were composed of alkaline materials such as Ca and Li, Al deposition or codeposited with AI. We showed best performance at the device with composite cathode (LiF/Al).

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.889-892
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• 2003

Effects of $N_{2}$ plasma treatment of the Al bottom cathode on the characteristics of top emission inverted organic light emitting diodes (TEIOLEDs) were studied. TEIOLEDs were fabricated by depositing an Al bottom cathode, a tris-(8-hydroxyquinoline) aluminum $(Alq_{3})$ emitting layer, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'diamine (TPD) hole transport layer, and an indium tin oxide (ITO) top anode sequentially. The Al bottom cathode layer was subjected to $N_{2}$ plasma treatment before deposition of the $Alq_{3}$ layer. X-ray photoelectron spectroscopy suggested that the existence of and the amount of $AIN_x$ between the $Alq_{3}$ emitting layer and the Al bottom cathode significantly affect the characteristics of TEIOLEDs. The maximum external quantum efficiency of the TEIOLED with an Ai bottom cathode subjected to $N_{2}$ plasma treatment for 30 s was about twice as high as that of the TEIOLED with an untreated Al bottom cathode.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.25-27
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• 2003

The device characteristics and the interface electronic structures of organic light-emitting devices based on /tris-(8-hydroxyquinoline)aluminum ($Alq_3$) were investigated with Al/NaF cathode. The Al/NaF cathode greatly improved the performance of the device over the Al-only cathode. A series of photoelectron spectroscopy studies on cathode structures including Al/LiF and $Al/CaF_2$ revealed that the performance enhancement originated mainly from the HOMO peak shift upon the fluoride deposition rather than the formation of the gap states