• 제목/요약/키워드: Air-dielectric

검색결과 429건 처리시간 0.028초

유전체 장벽 방전 플라즈마 반응기를 이용한 페놀 처리 (Phenol Treatment Plasma Reactor of Dielectric Barrier Discharge)

  • 박영식
    • 한국환경과학회지
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    • 제21권4호
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    • pp.479-488
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    • 2012
  • A Dielectric barrier discharge (DBD) plasma is shown in the present investigation to be effective of phenol degradation in the aqueous solutions in batch reactor with continuous air bubbling. Removal of phenol and effects of various parameters on the removal efficiency in the aqueous solution with high-voltage streamer discharge plasma are studied. The effect of 1st voltage (80 ~ 220 V), air flow rate (3 ~ 7 L/min), pH (3 ~ 11), electric conductivity of solution (4.16 ${\mu}S$/cm, deionized water) ~ 16.57 mS/cm (addition of NaCl 10 g/L) and initial phenol concentration (2.5 ~ 20.0 mg/L) were investigated. The observed results showed that phenol degradation was higher in the basic solution than that of the acidic. The optimum values on the 1st voltage and air flow rate for phenol degradation were 140 V and 6 L/min, respectively. It was considered that absorbance variation of $UV_{254}$ of phenol solution can be use as an indirect indicator of change of the non-biodegradable organic compounds within the treated phenol solution. Electric conductivity was not influenced the phenol degradation. To obtain the removal efficiency of phenol and COD of phenol over 97 % (initial phenol concentration, 10.0 mg/L), 80 min and 120 min were need, respectively. Phenol and COD degradation showed a pseudo-first order kinetics.

유속 감지를 위한 실리콘 유량센서의 설계 및 제작 (Design and Fabrication of Silicon Flow Sensor For Detecting Air Flow)

  • 이영주;전국진;부종욱;김성태
    • 전자공학회논문지A
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    • 제31A권5호
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    • pp.113-120
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    • 1994
  • Silicon flow sensor that can detect the velocity and direction of air flow was designed and fabricated by integrated circuit process and bulk micromachining technique. The flow sensor consists of three-layered dielectric diaphragm, a heater at the center of the diaphragm, and four thermopiles surrounding the heater at each side of diaphragm as sensing elements. This diaphragm structure contributes to improve the sensitivity of the sensor due to excellent thermal isolation property of dielectric materials and their tiny thickness. The flow sensor has good axial symmetry to sense 2-D air flow with the optimized sensing position in the proposed structure. The sensor is fabricated using CMOS compatible process followed by the anisotropic etching of silicon in KOH and EDP solutions to form I$\mu$ m thick dielectric diaphragm as the last step. TCR(Temperature Coefficient of Resistance) of the heater of the fabricated sensors was measured to calculate the operating temperature of the heater and the output voltage of the sensor with respect to flow velocity was also measured. The TCR of the polysilicon heater resistor is 697ppm/K, and the operating temperature of the heater is 331$^{\circ}C$ when the applied voltage is 5V. Measured sensitivity of the sensor is 18.7mV/(m/s)$^{1/2}$ for the flow velocity of smaller than 10m/s.

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음이온 생성을 위한 표면 유전체장벽방전의 설계조건 연구 (A Study of The Surface Dielectric Barrier Discharge Design Conditions for Generating Negative Air Ions)

  • 신상문;김정윤;김종수;최재하;최원호
    • 조명전기설비학회논문지
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    • 제28권1호
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    • pp.114-122
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    • 2014
  • This paper describes a study of the design conditions of a planar surface dielectric barrier discharge (DBD) reactors for generating negative air ions. The capacity of negative air ion generated by the surface DBD reactor is affected by the shape, area ratio and the location of the discharge and induction electrodes of it. To study the optimal design conditions of DBD reactors, the electrodes printed on the substrate of a PCB board is utilized to conduct kind of experiments: the distance of the each electrode along with the X-Y axis, the area ratio of the discharge electrode to induction electrode, and the symmetrical and asymmetrical location of two electrodes. The ion generation capacity is inverse proportional to the gap increases along with X-Y axis. And the optimum ion concentration generated by the ionizer was inspected when the electrodes area ratio was 3 and 5 times of the symmetrical and asymmetrical experimental condition respectively.

Cross Capacitance 원리를 작용한 새로운 유전상수 측정방법 제안 (A New Measurement Method of Dielectric Constants Applied the Principles of Cross Capacitance)

  • 김한준;이래덕;강전흥;유광민;한상옥
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.1084-1087
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    • 2002
  • The guard-ring type 3-terminal parallel plate electrodes proposed by ASTM D 150-81 and IEC 250 have been widely used for measurement of dielectric constants of solid dielectrics. However the method using this electrodes causes many uncertainty associated with the measurement errors of the diameter of the guarded electrode. the gap between guarded and guard-ring electrode. the distance of two active electrodes(the thickness of specimen), the roughness and contamination of surface of electrode and specimen. close adherence grade of electrode and specimen. In this paper. a new electrode system of cross capacitance type based on Thompson-Lampard theorem is designed and is employed for the measurement of dielectric constant. The results of simulation of guard-ring electrode and cross capacitance electrode using FEM program show that distance measurement between two electrodes in guard-ring electrode produces large uncertainty. on the other hand this effect in cross capacitance electrode is negligible. Furthermore. the air gap effects in the cross capacitance electrode is 5.6 times less sensitive than that in guard-ring electrode by assuming air gap of $50{\mu}m$.

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폴리플로필렌 필름의 열노화에 의한 유전완화현상에 관한 연구 (A study on the dielectric dispersion phenomena due to thermal aging of polypropylene film)

  • 이준웅;김용주;이상석
    • E2M - 전기 전자와 첨단 소재
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    • 제1권1호
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    • pp.54-61
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    • 1988
  • This paper was a study on dielectric phenomena of the specimen, Polypropylene films which were annealled in air and quenched in liquid nitrogen after aging for 5[hr] in water of 100[.deg.C]. The specimen was measured in temperature range of 15-120[.deg.C] and in frequency range of 30-1x 10$^{6}$ [HZ]. As the results of the study, it was confirmed that the tacticity of specimen was isotactic structure, and the degree of cryatallinity of the specimens calculated by means of Natta's method from XRD (X-ray Diffraction) spectrum was 55[%]. And for dielectric relaxation, .betha. peak-the tan .delta. (spectrum around 20[.deg.C])-attributed due to amorphous regions, and .alpha. peak - the tan .delta. spectrum around 90[.deg.C]-due to crystalline regions. It was identified that the degree of crystallinity of the specimen quenched in the liquid nitrogen was increased to 55-65[%], and that of the specimen annealled in the air was decreased to 55-50[%]. And activation energy from dielectric loss spectra was obtained 34.5[kcal/mole] for .alpha. peak and 80.5[kcal/mole] for .betha. peak, respectively.

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Dry-Air 중의 전극 형상 및 에폭시수지의 크기변화에 따른 연면방전특성 연구 (Surface Discharge Characteristics for Epoxy Resin in Dry-Air with Variations of Electrode Features and Epoxy Resin Size)

  • 박혜리;최은혁;김이국;이광식
    • 조명전기설비학회논문지
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    • 제23권2호
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    • pp.154-160
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    • 2009
  • 본 논문은 친환경 절연재료인 Dry-Air 중 에폭시 수지의 연면절연특성을 구명하여 Dry-Air를 절연매체로 사용한 각종 절연설계 시에 응용 가능한 기초자료를 제공하고자 한다. 사용한 전극은 침 대 평판, 구 대 평판, KS M3015 전극으로써, 동일한 조건 하에서 전극의 종류에 따른 연면 절연 파괴 전압, 연면 거리, 연면방전 전계강도를 비교하였다. 연면전계강도는 침 대 평판 전극 하에서 가장 높게 나타났다. 또한 에폭시 수지의 두께와 지름을 변화시켰을 때의 연면 절연 특성은 에폭시 수지의 두께가 두꺼울수록, 지름이 길수록 연면 절연 파괴 전압이 높게 나타남을 확인하였다.

계면조건에 따른 에폭시와 고무 거시계면의 절연내력 (Dielectric Strength of Macro Interface between Epoxy and Rubber According to the Interface Condition)

  • 오용철;배덕권;김진사;김충혁
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제55권12호
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    • pp.581-585
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    • 2006
  • Macro interfaces between two different bulk materials which affect the stability of insulation system exist inevitably in the complex insulation system using in extra high voltage (EHV) electric devices. In this paper, Interface between epoxy and ethylene propylene diene terpolymer (EPDM) was selected as an interface in electrical insulation system and the AC dielectric strength of the interface was investigated. Air compress system was used to give pressure to the interface. Specimens were prepared in various ways to generate different surface conditions for each type of interface. Increasing interfacial pressure, decreasing surface roughness and spreading oil over surfaces improve the AC interfacial dielectric strength. Especially, the dielectric strength was saturated at certain interfacial pressure.

소결 분위기가 $(1-x)CaTiO_3-xLaAlO_3$계의 마이크로파 유전특성에 미치는 영향 (The Effect of Sintering Atmosphere on the Microwave Dielectric Properties of $(1-x)CaTiO_3-xLaAlO_3$ System)

  • 여동훈;김현재;문종하
    • 한국세라믹학회지
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    • 제34권5호
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    • pp.505-511
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    • 1997
  • The effects of sintering atmospheres(air, O2, N2) on the sintering and microwave dielectric properties of (1-x)CaTiO3-xLaAlO3 system was investigated. The sintered density of (1-x)CaTiO3-xLaAlO3 under air atmosphere increased linearly with increasing x, but it decreased in the range of x>0.5 under O2 atmosphere and x>0.6 under N2 atmosphere in spite of the increament of the smaller La(1.06$\AA$) and Al(0.5 $\AA$) ion than Ca(0.99$\AA$) and Ti(0.6$\AA$). In case of the air sintering atmosphere of (1-x)CaTiO3-xLaAlO3 the two phases of orthorhombic and rhombohedral crystal system were coexisting, and the XRD peak of rhombohedral crystalsystem was to be higher with increasing x. However, the sintering atmosphere of O2 and N2 made the monophasic crystal system of orthorhombic keep up by x=0.5 and x=0.6, respectively, and it transformed to pseudo-cubic crystal system in x>0.5 and x>0.6. The XRD peak intensity of (1-x)CaTiO3-xLaAlO3 was to be gradually higher with increasing x under the air atmosphere of sintering. Whereas, its XRD peak intensity increased till x=0.6 but decreased with increasing x in the range of x>0.6 under O2 and N2 atmosphere. The relative dielectric constant of (1-x)CaTiO3-xLaAlO3 sintered under air atmosphere decreased linearly and the Q.f0 value increased according as x increased. On the other hand, the relative dielectric constant of (1-x)CaTiO3-xLaAlO3 under O2 and N2 atmosphere decreased in the range of x$\leq$0.5 with increasing x, but increased rapidly in the range of x$\geq$0.6. And the Q.f0 value increased till x=0.6 but decreased in the range of x>0.6 with increasing x. The temperature coefficient of resonant frequency had no relation to sintering atmosphere.

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유속감지를 위한 반도체 유량센서 (Semiconductor Flow Sensor To Detect Air flow)

  • 이영주;전국진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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    • pp.188-191
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    • 1993
  • Silicon flow sensor which can detect the magnitude and direction of two dimensional air flow was designed and fabricated by CMOS process and bulk micromachining technique. The flow sensor consists of three-layered dielectric diaphragm a heater at the center of the diaphragm and four thermopiles surrounding the heater at each side of diaphragm as sensing elements. This diaphragm structure contributes to improve the sensitivity due to excellent thermal isolation property of dielectric materials and its tiny thickness. The flow sensor has good axial symmetry to sense 2-D air flow with the optimized sensing position in the given structure. Measured sensitivity of our sensor is $18.7mV/(m/s)^{1/2}$.

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초고주파 소자 실장을 위한 유전체를 이용하는 본딩와이어 기생 효과 감소 방법 (Reduction of the bondwire parasitic effect using dielectric materials for microwave device packaging)

  • 김성진;윤상기;이해영
    • 전자공학회논문지D
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    • 제34D권2호
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    • pp.1-9
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    • 1997
  • For the reduction of parasitic inductance and matching of bonding wire in the package of microwave devices, we propose multiple bonding wires buried in a dielectric material of FR-4 composite. This structure is analyzed using the method of moments (MoM) and compared with the common bondwires and ribbon interconnections. The FR-4 composite is modelled by the cole-cole model which can consider the loss and the variation of the permittivity in a frequency. At 20 GHz, the parasitic reactance is reduced by 90%, 80%, 60% compared to those of a single bonding wire in air, double bonding wires in air and ribbon interconnection in air, respectively. Also, the new bondwire shows very good matching of 60.ohm characteristic impedance and has 15dB, 10dB, 5dB improvement of the return loss and 2.5dB, 0.7dB, 0.2dB improvement of the insertion loss compared to the common interconnections. This technique can minimize the parasitic effect of bondwires in microwave device packaging.

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