• Korean Journal of Materials Research
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• v.10 no.8
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• pp.540-544
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• 2000

The effect of atmospheric annearling on the densification and electrical poperty of the Ca-doped $YCrO_3$were investigated. In order to study the densification and elecrical properties of $Y_{0.7}Ca_{0.3}CrO3$ the sample sintered at $1700^{\circ}C$ for 12hrs were subsequently annealed at $1400^{\circ}C$ under various atmospheres($O_2$, Air, $N_2$)as a function of time. The density of $Y_{0.7}Ca_{0.3}CrO3$ was $4.5/cm^3$ before annealing. Under the $N_2$ annealingm the bulk density of $Y_{0.7}Ca_{0.3}CrO3$ was increased to $4.9g/cm^3$ at 24hrs and then remained unchanged at 48hrs. When $Y_{0.7}Ca_{0.3}CrO3$nwas annealing at $1400^{\circ}C$ for 12hrs and 24hrs under $O_2$ activation energies were about 0.16eV at 12hrs and 24hrs, and showed 0.167eV below 400K, and 0.24eV over 400K at 48hrs.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.222-227
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• 2008

In this study, $BaTiO_3$ thin films were grown by RF-magnetron sputtering, and the effects of a post-annealing process on the structural characteristics of the $BaTiO_3$ thin films were investigated. For the crystallization of the grown thin films, post-annealing was carried out in air at an annealing temperature that varied from $500-1000^{\circ}C$. XRD results showed that the highest crystal quality was obtained from the samples annealed at $600-700^{\circ}C$. From the SEM analysis, no crystal grains were observed after annealing at temperatures ranging from 500 to $600^{\circ}C$; and 80 nm grains were obtained at $700^{\circ}C$. The surface roughness of the $BaTiO_3$ thin films from AFM measurements and the crystal quality from Raman analysis also showed that the optimum annealing temperature was $700^{\circ}C$. XPS results demonstrated that the binding energy of each element of the thin-film-type $BaTiO_3$ in this study shifted with the annealing temperature. Additionally, a Ti-rich phenomenon was observed for samples annealed at $1000^{\circ}C$. Depth-profiling analysis through a GDS (glow discharge spectrometer) showed that a stoichiometric composition could be obtained when the annealing temperature was in the range of 500 to $700^{\circ}C$. All of the results obtained in this study clearly demonstrate that an annealing temperature of $700^{\circ}C$ results in optimal structural properties of $BaTiO_3$ thin films in terms of their crystal quality, surface roughness, and composition.

• Current Photovoltaic Research
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• v.4 no.1
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• pp.25-29
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• 2016

$Eu^{3+}$-activated $MgMoO_4$ phosphor thin films were grown at $400^{\circ}C$ on quartz substrates by radio-frequency magnetron sputter deposition from a 15 mol% Eu-doped $MgMoO_4$ target. After the deposition, the phosphor thin films were annealed at several temperatures for 30 min in air. The influence of thermal annealing temperature on the structural and optical properties of $MgMoO_4:Eu^{3+}$ phosphor thin films was investigated by using X-ray diffraction (XRD), photoluminescence (PL), and ultraviolet-visible spectrophotometry. The transmittance, optical band gap, and intensities of the luminescence and excitation spectra of the thin films were found to depend on the thermal annealing temperature. The XRD patterns indicated that all the thin films had a monoclinic structure with a main (220) diffraction peak. The highest average transmittance of 91.3% in the wavelength range of 320~1100 nm was obtained for the phosphor thin film annealed at $800^{\circ}C$. At this annealing temperature the optical band gap energy was estimated as 4.83 eV. The emission and excitation spectra exhibited that the $MgMoO_4:Eu^{3+}$ phosphor thin films could be effectively excited by near ultraviolet (281 nm) light, and emitted the dominant 614 nm red light. The results show that increasing RTA temperature can enhance $Eu^{3+}$ emission and excitation intensity.

• Korean Chemical Engineering Research
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• v.48 no.1
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• pp.53-57
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• 2010

In this work, we made experimental studies on the annealing process of PTFE(polytetrafluoroethylene) at $290{\sim}350^{\circ}C$ and examined the effects on crystallinity and tensile strength of PTFE. The experiments were performed at air atmosphere and the processes progressed up to 8 hours. From measuring tensile strength and SEM(scanning electron microscopy) observation, we could know PTFE was anisotropic material due to the band structure. Crystallinity of raw and annealed PTFE was measured by DSC(differential scanning calorimetry). As a result, crystallinity of annealed PTFE decreased and tensile strength increased. Also, we could verify the relation between crystallinity and tensile strength of annealed PTFE was linear. Raw PTFE, however, dropped out from the linear relation. Finally, PTFE annealed at $350^{\circ}C$ for 6 hours showed the smallest crystallinity and the largest tensile strength.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.14-21
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• 2003

Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.84-91
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• 2008

The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.525-529
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• 1999

The influence of ambient gases on field emission performance of Mo-field emitter array(FEA) in the frit-sealing step of field emission display(FED) packaging process was investigated. Mo-tip FEA was mounted on the glass substrate having a surrounded frit(Ferro FX11-137) and fired at $415^{\circ}C$ in the ambient gases of air, $N_2$ and Ar. The Ar gas was proved to be most proper ambient among the used gases through evaluating the turn-on voltage and field emission current of the fired Mo-tip FEA devices. It was confirmed that the Mo surface fired in Ar ambient was less oxidized when compared with another ones annealed in air and Ar ambient by the AFM, XPS, AES and SIMS analysis. Finally, the 3.5 inch-sized Mo-tip FED, which was packaged using frit-sealing process in the Ar ambient, was proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.310-313
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• 2002

Structures obtained with a direct boning of two FZ silicon wafers joined in such a way that a smooth surface of one wafer was attached to the grooved surface of the other were studied. A square net of grooves was made with a conventional photo lithography process. After high temperature annealing the appearance of voids and the rearrangement of structural defects were observed with X-ray diffraction topography techniques. It was shown that the formation of void free grooved boundaries was feasible. In the cases when particulate contamination was prevented, the voids appeared in the grooved structures could be eliminated with annealing. Since it was found that the flattening was accompanied with plastic deformation, this deformation was suggested to be intensively involved in the process of void removal. A model was proposed explaining the interaction between the structural defects resulted in "a dissolution" of cavities. The described processes may occur in grooved as well as in smooth structures, but there are the former that allow to manage air traps and undesirable excess of dislocation density. Grooves can be paths for air leave. According to the established mechanisms, if not outdone, the dislocations form local defect arrangements at the grooves permitting the substantial reduction in defect density over the remainder of the interfacial area.

• Progress in Superconductivity and Cryogenics
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• v.16 no.1
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• pp.6-8
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• 2014

The influence of quenching temperature, heating atmosphere and annealing time on superconducting characteristics has been studied for $LuBa_2Cu_3O_{7-z}$ compound which has been recently synthesized in a nearly phase-pure form. Resistivity measurements for the as-prepared sample heated at $300^{\circ}C$ in oxygen and subsequently quenched into liquid nitrogen revealed that there is no significant change in $T_c$. On the other hand, $T_c$ of the sample slightly increased when the sample was heated at $300^{\circ}C$ either in air or in $N_2$ atmosphere. It was also found that $T_c$ of the sample decreased when the annealing temperature in $N_2$ atmosphere increased above $400^{\circ}C$. The experimental results indicated that the as-prepared sample is under overdoped state. The enhanced superconducting transition observed in the samples after heating at $300^{\circ}C$ in air or $N_2$ atmosphere was discussed in conjunction with a slight removal of oxygen and ordering of oxygen atoms in the as-prepared sample.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.4
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• pp.1186-1191
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• 2010

Colored cubic zirconia specimen made by skull melt process were annealed in vacuum at the temperature of $1200^{\circ}C{\sim}1400^{\circ}C$ for 10~60 minutes to enhance the color. All the seven specimen become darker and eventually be black as annealing temperature and time increase. The black samples turned into original colors when we elevated the temperature with oxy-acetylene torch for around 10 minutes in the air. Finally, we could tune the colors of cubic zirconia either anneal in vacuum or the black samples in the air to obtain the proposed colors. Our proposed new process may be appropriate to fabricate the precious synthetic colored cubic zirconia to simulate the natural colored gem quality diamonds.