• Advances in nano research
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• 제5권3호
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• pp.193-201
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• 2017

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.

• Nuclear Engineering and Technology
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• 제33권3호
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• pp.307-314
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• 2001

The changes of weight gain, structure, morphology and uranium oxidation states in l0wt% G $d_2$ $O_3$-doped U $O_2$ during the oxidation below 475$^{\circ}C$ and heat treatment at 130$0^{\circ}C$ in air were investigated using TGA, XRD, SEM, EPMA and XPS. The room temperature ( $U_{0.86}$G $d_{0.14}$) $O_2$Cubic Phase Converted to highly distorted ( $U_{0.86}$G $d_{0.14}$)$_3$ $O_{8}$ -type sing1e Phase by oxidation at 475 $^{\circ}C$ in air. This oxidized phase was reduced by annealing at 130$0^{\circ}C$ in air. The room temperature XRD pattern of the 130$0^{\circ}C$ annealed powder revealed that ( $U_{0.86}$G $d_{0.14}$)$_3$ $O_{8}$ -type single phase was separated into Gd-depleted $U_3$ $O_{8}$ and Gd-enriched ( $U_{0.7}$G $d_{0.3}$) $O_2$$_{+x}$ type cubic phase. The reduction and phase separation by the high temperature annealing of kinetically metastable and highly deformed ( $U_{0.86}$G $d_{0.14}$)$_3$ $O_{8}$ -type phase are interpreted in terms of cation size difference between G $d^3$$^{+}$ and U according to the oxidation state of U.U.U.U.U.te of U.U.U.U.U.

• Corrosion Science and Technology
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• 제6권6호
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• pp.275-281
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• 2007

The effect of annealing on the pitting corrosion resistance of anodized Al-Mg alloy (AA5052) processed by equal-channel angular pressing (ECAP) was investigated by electrochemical techniques in a solution containing 0.2 mol/L of $AlCl_3$ and also by surface analysis. The Al-Mg alloy was annealed at a fixed temperature between 473 and 573 K for 120 min in air after ECAP. Anodizing was conducted for 40 min at $100-400A/m^2$ at 293 K in a solution containing 1.53 mol/L of $H_2SO_4$ and 0.0185 mol/L of $Al_2(SO_4)_3$. The internal stress generated in anodic oxide films during anodization was measured with a strain gauge to clarify the effect of ECAP on the pitting corrosion resistance of anodized Al-Mg alloy. The time required to initiate the pitting corrosion of anodized Al-Mg alloy was shorter in samples subjected to ECAP, indicating that ECAP decreased the pitting corrosion resistance. However, the pitting corrosion resistance was greatly improved by annealing after ECAP. The time required to initiate pitting corrosion increased with increasing annealing temperature. The strain gauge attached to Al-Mg alloy revealed that the internal stress present in the anodic oxide films was compressive stress, and that the stress was larger with ECAP than without. The compressive internal stress gradually decreased with increasing annealing temperature. Scanning electron microscopy showed that cracks occurred in the anodic oxide film on Al-Mg alloy during initial corrosion and that the cracks were larger with ECAP than without. The ECAP process of severe plastic deformation produces large internal stresses in the Al-Mg alloy; the stresses remain in the anodic oxide films, increasingthe likelihood of cracks. It is assumed that the pitting corrosion is promoted by these cracks as a result of the higher internal stress resulting from ECAP. The improvement in the pitting corrosion resistance of anodized AlMg alloy as a result of annealing appears to be attributable to a decrease in the internal stresses in anodic oxide films

• 한국자기학회지
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• 제13권6호
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• pp.221-225
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• 2003

통상적인 rf 스파터 장비와 YIG 타켓으로 수 $\mu\textrm{m}$의 Fe-Y-O 비정질상을 Ga-Gd Garnet(GGG) (111) 기판위에 만든 다음 550-105$0^{\circ}C$의 온도에서 대기 중 열처리할 때 열처리온도가 결정특성과 자기특성에 미치는 영향을 조사하였다 .Fe-Y-O 비정질상의 결정화온도는 졸-겔 분말의 결정화온도보다 훨씬 낮은 600-$650^{\circ}C$이었으며, $650^{\circ}C$ 이상에서 열처리하면 YIG(888)면의 피크의 강도는 GGG(888) 면 회절강도의 80%정도이고 YIG(888)면의 록킹곡선의 반가폭도 0.14$^{\circ}$보다 작아 YIG박막의 우수한 에피택시성장을 확인하였다. 열처리온도가 높을 경우 격자상수가 작아지면서 YIG(888)면의 회절선이 강해지고 좁아져서 높은 온도가 YIG박막의 고상에피택시성장에 유리하였으며 이것은 자화곡선에서도 확인되었다. 또한 높은 온도에서 열처리된 박막에서 수직이방성이 유도되었으며 이것은 기판과 박막의 0.15%의 격자불일치 때문에 생기는 것이다.

• 청정기술
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• 제15권3호
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• pp.202-209
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• 2009

질소 도핑된 $WO_3$ ($WO_3$:N) 막을 반응성 RF 마그네트론 스퍼터링을 이용하여 상온에서 증착한 다음, $300^{\circ}C$에서부터 $500^{\circ}C$의 온도 구간에서 후열처리(post-annealing)하였다. $WO_3$ 내 질소 음이온은 O 2p valence state와의 mixing effect 의해 광학적 밴드갭을 줄임으로써 장파장 영역의 빛을 흡수할 수 있었다. 더욱이 $350^{\circ}C$ 이상의 후열처리에 의해 $WO_3$:N의 결정성이 크게 향상됨을 발견하였으며, 동일 온도에서 열처리된 순수한 $WO_3$ 막보다 광전기화학 특성이 휠씬 우수한 셀 성능을 가짐을 알 수 있었다.

• Advances in nano research
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• 제15권1호
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• pp.1-13
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• 2023

Ti₃C₂T_x MXene, a 2D material, is known to exhibit unique characteristics that are strongly dependent on surface termination groups. Here, we developed a novel annealing approach with Ca as a reducing agent to simultaneously remove F and O groups from the surface of multilayered MXene powder. Unlike H₂ annealing that removes F effectively but has difficulty in removing O, annealing with Ca effectively removed both O and F. X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectroscopy revealed that the proposed approach effectively removed F and O from the MXene powder. The results of O/N analyses showed that the O concentration decreased by 57.5% (from 2.66 to 1.13 wt%). In addition, XPS fitting showed that the volume fraction of metal oxides (TiO₂ and Al₂O₃) decreased, while surface termination groups (-O and -OH) were enhanced, which could increase the hydrophilic and adsorption properties of the MXene. These findings suggest that when F and O are removed from the MXene powder, the interlayer spacing of its lattice structure increases. The proposed treatment also resulted in an increase in the specific surface area (from 5.17 to 10.98 m²/g), with an increase in oxidation resistance temperature in air from ~436 to ~667 ℃. The benefits of this novel technology were verified by demonstrating the significantly improved cyclic charge-discharge characteristics of a lithium-ion battery with a Ca-treated MXene electrode.

• 한국세라믹학회지
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• 제41권6호
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• pp.450-455
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• 2004

NiCr 합금을 열증발원으로 사용한 thermal evaporation법으로 NiCr박막을 $Al_2$O$_3$/Si 기판 위에 증착시켰다. 이 때 동일한 량의 NiCr 합금을 1회에 모두 증착하는 방법과, l/2씩 2회 증착하는 방법으로 NiCr 박막을 각각 증착시켜, 박막의 미세구조에 따른 막의 특성변화를 고찰하였으며, 열처리 온도에 따른 NiCr 박막의 상 변화, 조성변화 및 미세구조 변화를 XRD, AES 및 FE-SEM으로 각각 분석하였다. 열처리 과정에서 박막내부에 존재하는 Cr 성분이 표면 쪽으로 확산하여 산화됨으로써 Cr산화층/Ni 층/Cr 산화층의 전형적인 다층구조를 형성함을 알 수 있었으며, 특히, $700^{\circ}C$ 이상에서는 Ni 층이 Cr산화층을 통하여 표면 쪽으로 확산됨으로써 표면에 원주형 결정립을 가지는 NiO 층을 형성하였다. 특히 Ni 층이 확산 전의 구조를 유지한 채 표면에 추가적인 NiO층이 형성되는데, 이는 형성된 Cr산화층의 확산이 상대적으로 Ni 층에 비하여 어려운데 기인한다.

• 한국자기학회지
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• 제7권1호
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• pp.38-43
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• 1997

열처리 효과가 DC 마그네트론 스파터링 방법으로 제작한 $Co_{1-x}$ $Ti_{x}$(X = 0.13, 0.16, 0.21 at.%)계 박막의 표면자기특성에 미치는 영향을 조사하기 위하여, 제작된 시료를 150 .deg. C, 175 .deg. C, 200 .deg. C, 225 .deg. C 및 250 .deg. C의 공기 분위기에서 각각 1 시간씩 열처리한 후, 강자성 공명 실험을 통해 관측된 스핀파 공명 흡수선의 거동을 고찰했다. 모든 시료에 대해 다수의 volume mode 스핀파와 한 개 또는 두 개의 surgace mode 스핀파가 관측되었는데, 대체적으로 이와같은 현상은 시료 양면의 표면이방성이 0보다 작은 경우에 나타나는 특성이다. 열처리 온도가 150 .deg. C에서 250 .deg. C로 증가함에 따라 $K_{s2}$는 -0.11 erg/c $m_{2}$에서 -0.25 erg/$cm^{2}$로 미약하게 감소했으며, $K_{s1}$은 0.16 erg/$cm^{2}$에서 -0.53 erg/$cm^{2}$로 변화하는 모습을 보였다. 이와 같은 현상은 저온 열처리 과정(150 .deg. C ~ 200 .deg. C) 에서 공기쪽 표면층에 존재하는 Ti이 산화하여 공기쪽 표면층의 Co함량이 증가했고, 고온 열처리 과정 (225 .deg. C ~ 250 .deg. C)에서 Co 원자가 확산하므로서 나타나는 현상으로 해석된다.석된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.130.2-130.2
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• 2013

Today, chemical vapor deposition (CVD) of hydrocarbon gases has been demonstrated as an attractive method to synthesize large-area graphene layers. However, special care should be taken to precisely control the resulting graphene layers in CVD due to its sensitivity to various process parameters. Therefore, a facile synthesis to grow graphene layers with high controllability will have great advantages for scalable practical applications. In order to simplify and create efficiency in graphene synthesis, the graphene growth by thermal annealing process has been discussed by several groups. However, the study on growth mechanism and the detailed structural and optoelectronic properties in the resulting graphene films have not been reported yet, which will be of particular interest to explore for the practical application of graphene. In this study, we report the growth of few-layer, large-area graphene films using rapid thermal annealing (RTA) without the use of intentional carbon-containing precursor. The instability of nickel films in air facilitates the spontaneous formation of ultrathin (<2~3 nm) carbon- and oxygen-containing compounds on a nickel surface and high-temperature annealing of the nickel samples results in the formation of few-layer graphene films with high crystallinity. From annealing temperature and ambient studies during RTA, it was found that the evaporation of oxygen atoms from the surface is the dominant factor affecting the formation of graphene films. The thickness of the graphene layers is strongly dependent on the RTA temperature and time and the resulting films have a limited thickness less than 2 nm even for an extended RTA time. The transferred films have a low sheet resistance of ~380 ${\Omega}/sq$, with ~93% optical transparency. This simple and potentially inexpensive method of synthesizing novel 2-dimensional carbon films offers a wide choice of graphene films for various potential applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.223-223
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• 2009