• 한국응용과학기술학회지
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• 제21권4호
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• pp.274-278
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• 2004

In this study, hetero-electrode structures have been fabricated to increase luminescence efficiency. The presence of a thin layer of Sn or Ag at the organic-aluminum interface enhanced both electron injection efficiency and electroluminescence when compared to OLEDs using homogeneous electrode. In this paper, the effect of the cathode using Sn/Al hetero electrode structure is observed. Electric properties of the OLED using Sn/Al hetero cathode are improved in comparison of only Al cathode. The hetero-electrode existing different energy level induces the advanced structure of OLED can accumulate electron density. The luminescence efficiency of OLED with Sn/Al of Ag/Al cathode is higher because of their higher electron injection efficiency. And, the turn on voltage of the OLED device using Sn thin layer is lowest as about 10 V.

• 한국재료학회지
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• 제12권5호
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• pp.347-352
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• 2002

A transparent dielectric of the $PbO-B_2O_3-SiO_2-A1_2O_3$ system which was a low melting glass has been used for PDP (Plasma Display Panel), but it has a problem which is a reaction to be occurred between a transparent dielectric layer and electrodes (Ag, ITO) after firing. This research was conducted for ion migration of $Ag^+\$ and $Sn^ {2+}$ during firing three different frits of low melting glass. The result showed that yellowing phenomena occurred through a chemical reaction between $Ag^+\$and $Sn^ {2+}$ at 550~58$0^{\circ}C$ for 20~60 min. In addition, it was confirmed that the migration of $Sn^{2+}$ from ITO electrode made a strong effect on the yellowing phenomena.

• 한국세라믹학회지
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• 제33권11호
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• pp.1231-1236
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• 1996

The electrode resistance of semiconducting PTC BaTiO3 ceramic material was studied in some detail. Comme-rical In-Ag paste In-Ga alloy and electroless plated Ni as well as evaporated Al were chosen as electrode. The contact resistance of electroded samples were measured by both dc resistivity and ac impedance analysis. The aging effect on contact resistance under cyclic loading from -1$0^{\circ}C$ to 85$^{\circ}C$ was also monitored for the prolonged period of time. In case of Al electroded samples the heat treatment and protective coating had effects on the stability against contact resistance degradation. It was also found that the samples with commercial In-Ag paste and electroless plated Ni electrode had good properties of contact resistance against aging.

• 대한의용생체공학회:의공학회지
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• 제26권1호
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• pp.49-54
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• 2005

This paper presents a design of 1-channel active dry electrode module for EEG from one's forehead. The IA(instrumentation amplifier) circuit inside the module is based on the configuration sown on the paper MettingVanRijn et al. We analyze the IA circuit to find out the related equation, and then compare its simulated characteristic with the result obtained from the real active dry electrode circuit. With the active dry electrode and the wet(Ag/AgCI) electrode connected to the separated analog processing module on one's forehead at the same time, their real time and FFT outputs of EEG are examined for comparison. The active dry electrode module has advantages over the wet electrode and its analog processing module: 1) The size of the analog processing circuit of the active dry electrode module is smaller than that of existing EEG analog processing module; 2) the total cost required to make the proposed analog processing circuit is much lower than that of the existing circuit, since the designed circuit needs smaller parts; 3) the electrical characteristic is comparable to the general EEG analog processing module even if the designed module has simpler circuit configuration.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1297-1299
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• 1998

LB layers of L-$\alpha$-DLPC deposited by LB method were deposited onto n-type silicon wafer as Z-type film. Films made up of 8, 16 layers of lipid with long alkyl chain and the thickness of monolayer and multilayers was determined by ellipsometry. It was deposited Ag and Al onto LB layers and silicon wafer for electrode and small electrode exhibit high capacitance and low leakage current. The C-V curves of the MLS capacitor shows very high saturation value of capacitance. And cross-sectional SEM image of MLS capacitor indicated the presence of pore with Al electrode and we found that the Ag is good for electrode metal.

• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.628-636
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• 1998

LB layers L-$\alpha$-DLPC deposited by LB method were deposited onto n-type silicon wafer as Z-type film. Films made up of 8, 16 layers of lipid with long alkyl chain and the thickness of monolayer and multiayers was determined by ellipsometry. Ut was deposited Ag and Al onto LB layers and silicon wafer for electrode and small electrode exhibit high capacitiance and low lekage current. The C-V curves of the MLS capacitor shows very high saturation value of capacitance. And cross-sectional SEM image of MLD capacitor indicated the presence of pore with Al electrode and we found that the Ag is good for electrode metal.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.110.2-110.2
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• 2012

We reported on antireflective ZnSnO (ZTO)/Ag bilayer and ZTO/Ag/ZTO trilayer source/drain (S/D) electrodes for all-transparent ZTO channel based thin film transistors (TFTs). The ZTO/Ag bilayer is more transparent (83.71%) and effective source/drain (S/D) electrodes for the ZTO channel/Al2O3 gate dielectric/ITO gate electrode/glass structure than ZTO/Ag/ZTO trilayer because the bottom ZTO layer in the trilayer increasea contact resistance between S/D electrodes and ZTO channel layer and reduce the antireflection effect. The ZTO based all-transparent TFTs with ZTO/Ag bilayer S/D electrode showed a saturation mobility of 4.54cm2/Vs and switching property (1.31V/decade) comparable to TTFT with Ag S/D electrodes.

• 전기의세계
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• 제25권1호
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• pp.104-107
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• 1976

The switching characteristics of Non-crystalline As-Te-Si-Ge thin film device using Ag, In and Al metal for electrode, has been investigated. Threshold voltage and holding current of each sandwich type device varied due the to formation of the potential barrier in between non crystalline solid and electrode interface.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.889-892
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• 2009

We have developed a practical printing technology for the gate electrode of organic thin film transistors(OTFTs) by combining screen-printing with wet-etching process using nano-silver ink as a conducting material. The screen-printed and wet-etched Ag electrode exhibited a minimum line width of ~5 um, the thickness of ~65 nm, and a resistivity of ${\sim}10^{-6}{\Omega}{\cdot}cm$, producing good geometrical and electrical characteristics for gate electrode. The OTFTs with the screen-printed and wet-etched Ag electrode produced the saturation mobility of $0.13cm^2$/Vs and current on/off ratio of $1.79{\times}10^6$, being comparable to those of OTFT with the thermally evaporated Al gate electrode.

• 마이크로전자및패키징학회지
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• 제27권2호
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• pp.45-51
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• 2020

미래의 유연 전자 기기는 고온, 고습 환경 조건에서 사용될 수 있으며 반복적으로 굽히고 펴기를 반복하기 때문에 장기 신뢰성 확보를 위해서는 환경 조건과 반복 기계적 변형의 효과를 동시에 고려해야 한다. 본 연구에서는 전자기기에서 가장 일반적으로 사용되는 Al, Ag, Cu 전극을 유연 기판상에 진공 증착한 뒤 환경적인 요건을 상온/일반습도와 85℃/85% 습도 두 가지로 조건에서, 기계적 변형이 없는 평평한 상태와 반복적으로 굽힘 변형을 가해주는 조건의 총 4가지 환경 및 피로 복합 실험을 실시하였다. Al, Ag, Cu 전극 모두 기계적 변형이 없는 평평한 경우에 일반 환경 조건 및 고온/고습 조건 모두 10시간 동안 전기 저항 변화가 발생하지 않았다. 일반 환경 조건에서 굽힘 피로 실험을 진행한 경우, Al, Ag, Cu 전극 모두 금속의 피로 파괴 현상에 의해 10만 싸이클 이후 전기 저항이 약 400%~600% 증가하였다. 고온/고습에서 피로 실험의 경우, Al, Ag 전극은 일반 조건 피로 실험과 결과가 유사하였으나, Cu의 경우 고온/고습 피로실험의 경우 10만 싸이클 이후 전기 저항이 90000% 이상 증가하였다. 이는 부식과 기계적 피로가 동시에 발생할 경우 금속 전극에 매우 심각한 신뢰성 문제를 유발한다는 것을 의미하며, 환경 조건과 기계적 변형을 동시에 고려한 전극 소재 디자인이 필요하다는 것을 의미한다.