• Journal of the Microelectronics and Packaging Society
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• 제8권3호
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• pp.69-75
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• 2001

Photoimageable thick film technology is a new technology in that the lithography process such as exposure and development is applied to the conventional thick film process. Line resolution of 25 $\mu\textrm{m}$ width and 25 $\mu\textrm{m}$ space could be obtained by laminating green sheet, printing photoimageable Ag paste, exposing the test patterns, developing, and co-firing. In case of using the alumina substrate, 20 $\mu\textrm{m}$ fine line could be also obtained by similar process. Test results showed that exposing power density and developing time were the most important processing parameters for the fine line formation. Microstrip and series gap resonators with well-defined line morphology and good transmission characteristics in high frequency were formed by this new technology, and thereby dielectric constant and loss of test substrate were calculated.

• Journal of the Korean Ceramic Society
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• 제44권5호
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• pp.173-178
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• 2007

The microstructure and microwave dielectric properties of dolomite type borates, $CaZr(BO_3)_2$ ceramics prepared by conventional mixed oxide method were explored. The sintering temperature of $CaZr(BO_3)_2$ ceramics could be reduced from $1150^{\circ}C\;to\;925^{\circ}C$ with little amount of sintering additives. Microwave dielectric properties of 3 wt% $Bi_2O_3-CuO$ added $CaZr(BO_3)_2$ ceramics sintered at $925^{\circ}C$ were $K{\approx}10.4,\;Q{\times}f{\approx}80,000GHz\;and\;TCF{\approx}+2ppm/^{\circ}C$. Thus obtained LTCC tape was co-fired with Ag paste for compatibility test and revealed no sign of Ag reaction with the ceramics. Therefore, $CaZr(BO_3)_2$ ceramics is considered as a possible candidate material for low temperature co-fired multilayer devices.

• Bulletin of the Korean Chemical Society
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• 제11권3호
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• pp.200-205
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• 1990

Chemically modified electrodes(CMEs), based on 2-imino-1-cyclopentane-dithiocarboxylic acid (icdc) containing carbon paste, have been characterized using cyclic voltammetric techniques. Ag(I) was chemically deposited on the CMEs, and voltammograms were obtained with the electrode in a separate buffer solution. The CME surface can be regenerated with exposure to acid and reused for deposition. In 10 deposition/measurement/regenerate cycles, the linear response have been reproduced up to $1{\times}10^{-6}$ M in linear sweep voltammetry and 1${\times}$10-8 M in differential pulse voltammetry with relative standard deviation of 5.2% and 12.4%, respectiveiy. The sensitivity increased with deposition time and scanning rate, and detection limit was $1{\times}10^{-7}M\;and\;1{\times}10^{-9}M$ at 20 minutes deposition in the linear sweep voltammetry and differential pulse voltammetry, respectively. The presence of some metal ions does not influence the silver ion response. Satisfactory results were obtained for the analysis of the silver ion for a variety of reference materials without interference of Hg ion at the condition of pH = 5-6.

• Journal of the Microelectronics and Packaging Society
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• 제29권4호
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• pp.35-40
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• 2022

In this study, the average particle size of silver powder was 2㎛, 7㎛, and a mixture of these (50:50wt%), three kinds of silver pastes were prepared. In addition, as a result of examining the viscosity and viscoelasticity of the three silver pastes, TGA measurement, resistance change according to strain, and change in surface structure of the electrode, the following conclusions were obtained. Summarizing these results, it was found that it is most desirable to have a particle size of about 2㎛ in order to minimize the change in resistance due to strain.

• Journal of the Korean Magnetics Society
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• 제13권3호
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• pp.109-114
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• 2003

The purpose of this study Is to investigate the effect of $V_2$O$_{5}$ addition on the microstructures and magnetic properties of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt％ $V_2O_{5}$-doped NiCuZn ferrite pastes. With increasing the $V_2O_{5}$ content, the exaggerated grain growth of ferrite layers was developed due to the promotion of Ag diffusion and Cu segregation into the grain boundaries oi ferrites, which affected significantly the magnetic properties of the chip inductors. After sintering at $900^{\circ}C$, the inductance at 10 MHZ of the 0.5 wt％ $V_2O_{5}$-doped chip inductor was 3.7 ${\mu}$H less than 4.2 ${\mu}$H of the 0.3 wt% $V_2O_{5}$-doped one, which was thought to be caused by the residual stress at the ferrite layers increased with the promotion of Ag diffusion and Cu segregation. The quality factor of the 0.5 wt% $V_2O_{5}$-doped chip inductor decreased with increasing the sintering temperature, which was considered to be caused by the electrical resistivity of the ferrite layer decreased with the promotion of Ag/cu segregation at the grain boundaries and the growth of the mean grain size of ferrite due to exaggerated grain growth of ferrite layers.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 한국마이크로전자및패키징학회 2004년도 ISMP Pb-free solders and the PCB technologies related to Pb-free solders
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• pp.211-219
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• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces stric시y related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials. In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.

• Applied Chemistry for Engineering
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• 제27권1호
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• pp.68-73
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• 2016

Silver nanoparticles were prepared by chemical reduction-protection method using 1-decanoic acid and tri-n-octylphosphine as surfactants, and using $NaBH_4$ as a reducing agent. The silver nanoparticles were also studied for their formation, structure, morphology and size using UV-Visible spectroscopy, XRD, TEM and SEM. Further the viscosity of the silver paste and the surface resistance of the silver metal film produced by screen coating onto a PET film were investigated. Well dispersed and quasispherical silver nanoparticles with the size of 10-200 nm were obtained under the optimal molar ratio of $NaBH_4/AgNO_3=1:5$. The surface resistance of silver metal film coated on the PET film made with the silver nanoparticles under the optimal molar ratio showed a minal value of $41{\mu}{\Omega}/cm^2$.

• Proceedings of the KWS Conference
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• 대한용접접합학회 2010년도 춘계학술발표대회 초록집
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• pp.82-82
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• 2010

표면실장 공법을 통해 CSP 패키지를 보드에 실장 하는데 있어 무연솔더 접합부의 신뢰성에 영향을 미치는 인자 중 가장 중요한 것은 접합부에 형성되는 IMC (Intermetallic compound, 금속간화합물)인 것으로 알려져 있다. 접합부의 칩 부분에는 솔더와 칩의 UBM (Under bump metalization)이 접합하여 IMC가 형성되나, 보드 부분에는 솔더와 보드의 UBM 뿐만 아니라 그 사이에 솔더 페이스트가 함께 접합되어 IMC가 형성된다. 본 연구에서는 패키지의 신뢰성 연구를 위해 솔더 페이스트의 유무 및 두께에 따른 무연 솔더 접합부의 미세조직의 변화를 분석하였다. 본 실험에서는 Sn-3.0(Wt.%)Ag-0.5Cu 조성과 본 연구진에 의해 개발된 Sn-Ag-Cu-In 조성의 직경 $450{\mu}m$ 솔더 볼을 사용하였으며, 솔더 페이스트는 상용 Sn-3.0Ag-0.5Cu (ALPHA OM-325)를 사용하였다. 칩은 ENIG (Electroless nickel immersion gold) finish pad가 형성된 CSP (Chip scale package)를, 보드는 OSP (Organic solderability preservative)/Cu finish pad가 형성된 것을 사용하였다. 실험 방법은 보드를 솔더 페이스트 없이 플라즈마 처리 한 것, 솔더 페이스트를 $30{\mu}m$ 두께로 인쇄한 것, $120{\mu}m$의 두께로 인쇄한 것, 이렇게 3가지 조건으로 준비한 후, 솔더 볼이 bumping된 칩을 mounting하여, $242^{\circ}C$의 peak 온도 조건의 oven(1809UL, Heller)에서 reflow를 실시하여 패키지를 형성하였다. 이후 시편은 정밀 연마한 후, OM(Optical Microscopic)과 SEM(scanning electron microscope) 및 EDS(energy dispersive spectroscope)를 사용하여 솔더 접합부 IMC의 미세조직을 관찰, 분석하였다.

• Nuclear Engineering and Technology
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• 제56권11호
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• pp.4487-4493
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• 2024

Bonding between plasma-facing materials (PFMs) and heat sinks is an important factor for the performance of plasma-facing components (PFCs) in the tokamak device; in some specific applications, graphite is adopted as the plasma-facing material and CuCrZr as the heatsink. Bonding of graphite and CuCrZr is a critical and difficult process due to the poor wettability of graphite and wide gap of material properties between graphite and CuCrZr, to which should be paid more attention. Herein, brazing processes were developed to achieve the bonding of CuCrZr and graphite, and a layer of oxygen-free copper (OFC) was placed between graphite tiles and CuCrZr heat sinks as a stress-buffer layer. Three types of brazing fillers including Ti powder with AgCu foil, AgCuTi paste and AgCuTi foil were used to achieve the bonding of CuCrZr and graphite. Samples were tested by scanning electron microscopy (SEM), energy dispersive spectrometry (EDS) and shear strength experiment; the results showed that these three types of fillers can achieve the bonding of CuCrZr and graphite. In addition, one-step brazing and multi-step brazing were both developed to achieve the bonding of graphite/OFC/CuCrZr, and the mock-ups were manufactured and endured cyclic high heat loads in the high heat flux (HHF) tests. In conclusion, the simplified one step brazing process including types of fillers, brazing temperature and brazing sequence was determined, which provides a promising premise method for the heat transfer structure design of PFCs.

• Journal of the Microelectronics and Packaging Society
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• 제28권2호
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• pp.65-70
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• 2021

In this study, interfacial properties and mechanical properties of joints were reported after Cu pads finished with organic solderability preservative (OSP) on flame retardant-4 (FR-4) printed circuit board (PCB) and electronic components were joined with a Sn-57Bi-1Ag solder paste by using a laser bonding process. The laser bonding process was performed under various bonding conditions with changing a laser power and a bonding time and effects of bonding conditions on interfacial and mechanical properties of joints were analyzed. In order to apply for industry, properties of bonding joints using a reflow bonding process which are widely used were compared. When the laser bonding process were performed, we observed that Cu₆Sn₅ intermetallic compounds (IMCs) were fully formed at the interface although the bonding times were very short about 2 and 3 s. Furthermore, void formations of the joints by using the laser bonding process were suppressed at the joints with comparing to the reflow bonding process and shear strengths of bonding joints were higher than that by using the reflow bonding process. Therefore, in spite of a very short bonding time, it is expected that joints will be stably formed and have a high mechanical strength by using the laser bonding process.