• Applied Science and Convergence Technology
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• 제27권1호
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• pp.5-8
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• 2018

In this paper, plasma treatment effects on a ploy(dimethyl siloxane) substrate were analyzed for the applications of stretchable silver nanowire (Ag NWs) electrodes. The oxygen plasma treated sample shows the best performance compared to nitrogen treated and untreated samples. The lowest sheet resistance and reasonable stretching capability was achieved up to 20% strain condition without open circuit fail for the oxygen plasma treated sample.

• 마이크로전자및패키징학회지
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• 제11권1호
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• pp.1-6
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• 2004

자동차 전장품의 시험환경 조건이 엄격해짐에 따라, 전장품 개발 기술자들은 이에 부합하는 성능, 신뢰성, 비용 등을 고려한 보다 효과적인 제품 설계를 위해 노력하고 있다. 본 논문에서는 ECM 알루미나 기판의 플라즈마 세척 영향과 리플로우 후 Sn-37wt%Pb 솔더와 패드 접합부 계면에서 형성되는 금속간 화합물을 관찰하였다. 기판의 플라즈마 세척은 계면 접착력을 저해하였던 C에 의한 유기 잔류물 층이 제거되어 계면 접착력을 향상시키는 효과가 있다. 또한 AFM 분석 결과 도체 패드의 표면 거칠기는 304 nm에서 330 m로 증가하였다. 리플로우 과정에서 솔더와 TiWN/Cu 패드 계면에서 형성된 $Cu_6/Sn_5$는 리플로우 횟수가 증가할 수록 결정립의 크기도 조대화되었다. 솔더와 Ag-Pd 도체패드 계면에서는 세포질 형태의 $Ag_3Sn$화합물이 관찰되었다. $Ag_3Sn$은 지름이 약 0.1∼0.6 $\mu\textrm{m}$이며, 솔더 내부에서는 침상 모양도 관찰되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.101-102
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-Insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C$ and $440^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4} eV/K)T^2/(T+332 K)$. After the as-grown $AgGaS_2$ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.519-522
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• 2002

Ag (silver) can be used for YBa$_2$Cu$_3$O$\_$7-$\delta$/(YBCO) coated conductor tape as the substrate on which YBCO can be deposited directly because of the chemical compatibility of Ag with YBCO. We have fabricated rolled Ag tapes with various total reduction ratios and different thicknesses. As-rolled Ag tape was recrystallized at 750$^{\circ}C$ for 30min in air and vacuum of 10$\^$-3/ torr. The orientation distribution functions (ODF) calculated from three x-ray pole figures of as-rolled and recrystallized tapes were analysed. As the total reduction ratio increased from 94 to 98%, the development of {110}texture of as-rolled Ag improved. Under the present experimental condition, maximum {110}ODF value of Ag tape was obtained for the sample with 94% total reduction ratio which was recrystallized at 750$^{\circ}C$ for 30min in vacuum of 10$\^$-3/ torr.

• 한국표면공학회지
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• 제32권4호
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• pp.496-502
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• 1999

Electroplating of Ag and Au on the functional area of lead frames are required for good bonding ability in IC packaging. As the patterns of the lead frame become finer, development of new deposition technology has been required for solving problems associated with process control for uniform thickness on selected area. Sputtering was employed to investigate the adhesion between substrate Alloy42 and Ag film as a new candidate process alternative to conventional electroplating. Coating thickness of Ag film was controlled to 3.5$\mu\textrm{m}$ at room temperature as a reference. The deposition of film was optimized to ensure the adhesion by process parameters of substrate heating temperature at $100~300^{\circ}C$, sputter etching time at -300V for 10~30min, bias voltage of -100~-500V, and existence of Cr interlayer film of $500\AA$. The critical $load L_{c}$ /, defined as the minimum load at which initial damage occurs, was the highest up to 29N at bias voltage of -500V by scratch test. AFM surface image and AES depth profile were investigated to analyze the interface. The effect of bias voltage in sputtering was to improve the surface roughness and remove the oxide on Alloy42.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.207-210
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• 2007

We prepared Al doped ZnO/Ag/Al doped ZnO on the polymer substrate by Facing Target Sputtering (FTS). FTS featured Facing Target Sputtering featured that deposition is stable at the low pressure, it has high plasma density and suppresses the substrate damage from energetic particles. We fixed to 50nm up and down thickness of AZO layer, respectively and that of intermediate Ag layer was adjusted with deposition time. In the result, AZO/Ag/AZO multilayer thin films have much better electrical conductivity than AZO single layer thin film. As increasing the thickness of Ag layer, the transmittance decreased.

• 한국세라믹학회지
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• 제36권6호
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• pp.583-589
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• 1999

In the fabrication of ceramic chip couples for high frequency application such as the mobile communication equipment the formation of electrode lines and Ag diffusion were investigated with heat treatment conditions for removing organic binders. The deformation and densification of the electrode line greatly depended on the binder burnout process due to the overlapped temperature zone near 400$^{\circ}C$ of the binder dissociation and the solid phase sintering of the silver electrode. Ag ions were diffused into the glass ceramic substrate. The Ag diffusion was led by the glassy phase containing Pb ions rather than by the crystalline phase containing Ca ions. The fact suggests that the Ag diffusion could be controlled by managing the composition of the glass ceramic substrate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.140-140
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• 2000

The initial growth mode of Nb on Ag(11) in sub-monolayer regime and the influence of subsequent 520K annealing are studied using UHV Scanning Tunneling Microscopy. E-beam evaporated Nb is deposited onto the substrate at RT, and STM measurements are carried out at RT and 78 K. With Nb being immiscible in bulk Ag, 3D islands formation begins at early stage and no particular ordered structure is found. After annealing to 520K, most of islands are disappeared from terrace. There exist 2 possibilities. : (1) Diffusion of Nb into the 2nd or 3rd layer of Ag substrate or (2) agglomeration of Nb on Ag at higher temperature. A model will be given to explain the evidence. In addition, we investigated the change of STM image according to bias voltage depending on island size. Possible physical mechanism responsible for such behavior together with interaction between Nb islands and reactive gases will be also discussed.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 추계기술심포지움논문집
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• pp.169-172
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• 2002

Silver pastes for inner conductor in the Low Temperature Co-fired Ceramics (LTCC) are composed of silver powder, binder, solvent and additives. The composition of the chemicals have influence on rheology, printability, shrinkage rate, etc. In this study, commercial Ag pastes and Ag pastes made in KETI were investigated to find the relationship between characteristics of Ag paste and solid contents. Ag pastes with 68~90 wt% Solid Contents were tested. Substrate/paste matching property and conductivity of the conductor lines showed large dependence on solid contents of Ag paste.

• 한국재료학회지
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• 제16권8호
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• pp.490-496
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• 2006

ITO monolayer and ITO/Ag/ITO multilayer thin films are prepared by D.C. magnetron sputtering method. Ag layer was inserted for applying ITO to a flexible substrate at low temperature. Carrier concentration and carrier mobility of ITO and ITO/Ag/ITO thin films were measured, the transmittance of them also was done. The amorphous phase was confirmed to be combined in addition to (400) and (440) peaks from XRD result of ITO thin film. As the substrate temperature increased, the preferred orientation of (400) appeared. From the result of application of Ag layer at room temperature, the growth of columnar structure was inhibited, and the amorphous phase formed mostly. The ITO/Ag/ITO thin film represented the transmittance of above 80% when the thickness of Ag layer was 50 ${\AA}$, and the concentration of carrier increased up to above 10 times than that of ITO thin film. Finally, since very low resistance of 3.9${\Omega}/{\square}$ was observed, the effective application of low temperature process is expected to be possible for ITO thin film.