• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.1-9
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• 2011

Understanding the void characterization in the solder joints has become more important because of the application of lead free solder materials and its reliability in electronic packaging technology. According to the JEDEC 217 standard, it describes void types formed in the solder joints, and divides into some categories depending on the void position and formation cause. Based on the previous papers and the standards related to the void, reliability of the BGA solder joints is determined by the size of void, as well as the location of void inside the BGA solder ball. Prior to reflow soldering process, OSP(organic surface preservative) finished Cu electrode was exposed under $85^{\circ}C$/60%RH(relative humidity) for 168 h. Voids induced by the exposure of $85^{\circ}C$/60%RH became larger and bigger with increasing aging times. The void position has more influence on mechanical strength property than the amount of void growth does.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1229-1232
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• 2005

We report the method of preventing the grey color of Bi based glass frits caused by reduction of $Bi_2O_3$. To prevent reduction of $Bi_2O_3$, we controlled the melting temperature. Low melting temperature reduces the reduction of $Bi_2O_3$ and that makes clarity transparent glass cullets. After firing, glass frits that melted at lower temperature showed better transparency. To prevent the browning, we used some additives like CuO, $CeO_2$, CoO and $TiO_2$. The colors of glass cullets were varied according to additives. After firing, dielectric layer contained additives showed better transparency than the one without additives. In the point of reaction between dielectric layer and Ag electrode, CuO was the most effective additive in preventing the yellowing.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.3
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• pp.19-24
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• 1999

The multilayer chip band pass filter for mobile communication is fabricated and designed. The size, insertion loss, center frequency and band width of multilayer chip filter are 4.5$\times$4.4$\times$1.8[mm], 3.0[dB] and 700[MHz]$\pm$15[MHz] respectively. The chip filter using $BiNbO_4$with CuO 0.06wt% +$V_2O_5$.lwt% was fabricated by screen printing with Ag electrode after tape casting. Insertion loss and center frequency of the fabricated chip filter are 2.58[dB] and 692.5$\pm$15[MHz] respectively. The center frequency was lower 7.5[MHz] than design result, but other characteristics of chip filter were similar to the ruts ultras of design result.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.9-17
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• 1998

BiNbO$_{4}$ ceramics with 0.07wt% V$_{2}$O$_{5}$ and 0.03wt% CuO (BNC3V7) sintered at 900 .deg. C where it is possible for these to be co-fired with ag electronde. Dielectric constant of 44.3 TCF (Thermal Coefficient of resonance Frequency) of 2 ppm/.deg. C and Qxf value 22,000 GHz can be obtained from BNC3V7. the laminatedchip LC filter is indispensible to the minimaturization of PCS (Personal Communication System) terminals. Therefore, multilayer type BPF has been fabricated by screen-printing with silver electrode after tape casting. The simulated characteristics of the fabricated filters sintered at 900.deg. C werecomparedwith the designed ones. for Band Pass Filter widths was similar that ofdesigned ones. For Low Pass Filter (LPF), insertion loss value of band pass widths (2.4 dB) which is a few higher than that of designed (1dB), but characteristization of band pass widths was similar that of designed ones.s.of designed ones.s.

• Journal of the Korean Ceramic Society
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• v.35 no.2
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• pp.123-128
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• 1998

Multilayer ceramic capacitors(MLCC) were prepared by laminating the layer of composition with dif-ferent Curie temperature to improve temperature coefficient in the Pb(Mg1/3Nb2/3)O3-PbTiO3 binary system. Green sheet was formed by tape casting using Pb(Mg1/3Nb2/3)O3-PbTiO3 and PbTiO3 synthesized with solid state reaction of PBO. Nb2O5 MgO and TiO2. Green sheet with electrode of 70Ag-30Pd was laminated under 300 kg/cm2 at 70$^{\circ}C$ and sintered at 1100$^{\circ}C$ for 2hr. Curie temperatues for MLCC with 10 layers of pure PMN and 0.9PMN-0.1PT were lowered to -22$^{\circ}C$ and 36$^{\circ}C$ respectively. MLCC with 7 layers of PMN and 3 layers of 0.9PMN-0.1PT showed nearly zero temperature coefficient of capacitance in the range of -20∼30$^{\circ}C$ and sum of dissipation factor of each layer.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1307-1308
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• 2008

본 연구에서는 이전에 제안한 stripe형으로 제작된 경사형 대향유지전극구조의 마진 개선과 오방전 감소를 위하여 폐쇄형으로 제작된 경사형 대향유지전극구조를 제안하였다. 제안된 구조는 상판의 유지전극들을 페쇄형으로 패터닝된 유전체층 사이에 Ag 전극을 경사형으로 형성하여 만든 구조이다. 테스트 패널은 250${\mu}m$ 유지전극 간격들을 가지는 제안된 구조와 기존의 유지전극 간격 60${\mu}m$의 ITO 구조를 reference로 하여 제작하였다. 폐쇄형 구조를 reference를 기준으로 이전의 stripe형과 비교했을때 전류가 50${\sim}$64% 증가하여 효율이 18% 감소하였지만 마진이 25V 증가하였고 휘도가 최대 44% 증가하였다. 패쇄형 구조가 stripe형 구조에 비해 효율이 감소하였지만 기존의 면방전형 구조에 비해 최대 146%의 효율 증가를 보였으며 동일전압에서 stripe 구조에 비해 높은 휘도와 넓어진 마진을 가졌다.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1311-1312
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• 2008

차세대 대형 FPD(Flat Panel Display)로 각광받는 PDP(Plasma Display Panel)는 cost, 소비전력, 효율 등의 문제점이 있다. 본 연구에서는 저가격화를 실현하기 위하여 종래 사용되었던 투명전극인 ITO(Indium-Tin Oxide)전극 대신 금속(Ag) 전극만을 사용하여 공정을 간소화한 Fence 전극구조를 제안하였다. 그리고 소비전력의 감소와 효율의 향상을 위해 격벽쪽의 전극을 제거하여 방전경로상의 저항을 증가시켜 방전전류를 감소시키는 동시에 하전입자의 격벽손실을 줄이는 4-inch Test Panel을 제작하여 전기광학적 특성 실험을 하였다. 제안한 구조의 돌기길이를 변화시켜 방전개시전압, 휘도, 소비전력, 효율 등을 측정, 비교하여 power가 14%감소하여 효율을 11% 향상 시킬 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.166.1-166.1
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• 2014

We have controlled the graphene surface in two ways to improve the device performance of optoelectronics based on graphene transparent conductive films. We controlled multilayer graphene (MLG) work function and localized surface plasmon resonance wavelength using a silver nanoparticles formed on graphene surface. Graphene substrates were prepared using a chemical vapor deposition and transfer process. Various size of silver nanoparticles were prepared using a thermal evaporator and post annealing process on graphene surface. Silver nanoparticles were confirmed by using scanning electron microscopy (SEM). Work functions of graphene surface with various sizes of Ag nanoparticles were measured using ultraviolet photoelectron spectroscopy (UPS). The result shows that the work functions of MLG could be controlled from 4.39 eV to 4.55 eV by coating different amounts of silver nanoparticles while minimal changes in the sheet resistance and transmittance. Also the Localized surface plasmon resonance (LSPR) wavelength was investigated according to various sizes of silver nanoparticles. LSPR wavelength was measured using the absorbance spectrum, and we confirmed that the resonance wavelength could be controlled from 396nm to 425nm according to the size of silver nanoparticles on graphene surface. To confirm improvement of the device performance, we fabricated the organic solar cell based on MLG electrode. The results show that the work function and plasmon resonance wavelength could be controlled to improve the performance of optoelectronics device.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.472.2-472.2
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• 2014

현재 결정질 실리콘 태양전지의 전 후면 전극의 형성은 스크린 프린팅 방법이 주를 이루고 있다. 스크린 프린팅 방법은 쉽고 빠르게 인쇄가 가능한 반면 단가가 높고 금속 페이스트에 첨가된 여러 혼합물에 의해서 전극과 기판 사이의 저항이 크다는 단점이 있다. 본 논문에서는 도금을 이용하여 태양전지의 전극을 형성한 후 태양전지의 전기적 특성을 비교하였다. 또한 단일반사방지막($SiN_x$) 증착 후 도금을 이용한 전극 형성 시 반사방지막의 pin-hole에 의해 전극 이외의 표면에 도금이 되는 ghost plating 현상이 발생하게 되는데, 이를 방지하기 위해 thermal oxidation을 이용하여 SiO2/SiNx 이중반사 방지막을 증착함으로써 ghost plating을 최소화 시켰다. Ni을 이용하여 전극과 기판 사이의 저항을 낮추었으며, 주요 전극은 Cu 도금을 사용함으로써 단가를 낮추었으며 마지막으로 Cu전극의 산화를 방지하기 위해 Ag을 이용하여 얇게 도금하였다. 실험에 사용된 Si 웨이퍼 특성은 p-형, $156{\times}156mm2$, $200{\mu}m$, $0.5{\sim}3.0{\Omega}{\cdot}cm$ 이다. 웨이퍼는 표면조직화, p-n접합 형성, 반사방지막 코팅을 하였으며 스크린 프린팅 방법을 이용해 후면 전극을 인쇄하고 열처리 과정을 통해 전극을 형성하였다. 이 후 전면에 레이저를 이용해 전극 패턴을 형성한 후 도금을 실행하여 태양전지를 완성하였다. 완성된 태양전지는 솔라 시뮬레이터, QE 및 TLM패턴을 이용하여 전기적 특성을 분석하였으며, SEM과 linescan, 광학현미경 등을 이용하여 전극을 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.53-54
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• 2005

We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin rim transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with top cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that TOLED with ITO or IZO top cathode layer prepared by BCS has much lower leakage current density ($1\times10^{-5}$ mA/cm2 at -6V) than that ($1\times10^{-1}\sim10^{\circ}mA/cm^2$)of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and dc/rf sputtering in fabrication process of organic based optoelectronics.