• 한국재료학회지
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• 제16권4호
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• pp.257-263
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• 2006

We have investigated the effect of silver added to Cu films on the microstructure evolution, resistivity, surface morphology, stress relaxation temperature, and adhesion properties of Cu(Ag) alloy thin films deposited on Mo glue layer upon annealing. In addition, pure Cu films deposited on Mo has been annealed and compared. The results show that the silver in Cu(Ag) thin films control the grain growth through the coarsening of its precipitates upon annealing at $300^{\circ}C{\sim}600^{\circ}C$ and the grain growth of Cu reveals the activation energy of 0.22 eV, approximately one third of activation energy for diffusion of Ag dopant along the grain boundaries in Cu matrix (0.75 eV). This indicates that the grain growth can be controlled by Ag diffusion along the grain boundaries. In addition, the grain growth can be a major contributor to the decreased resistivity of Cu(Ag) alloy thin films at the temperature of $300^{\circ}C{\sim}500^{\circ}C$, and decreases the resistivity of Cu(Ag) thin films to $1.96{\mu}{\Omega}-cm$ after annealing at $600^{\circ}C$. Furthermore, the addition of Ag increases the stress relaxation temperature of Cu(Ag) thin films, and thus leading to the enhanced resistance to the void formation, which starts at $300^{\circ}C$ in the pure Cu thin films. Moreover, Cu(Ag) thin films shows the increased adhesion properties, possibly resulting from the Ag segregating to the interface. Consequently, the Cu(Ag) thin films can be used as a metallization of advanced TFT-LCDs.

• 센서학회지
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• 제15권2호
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• pp.97-101
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• 2006

Silver electrode having a high Electrocatalytic activity is oxygen-permeable electrode, in which oxygen ad-atoms are adsorbed and moved toward YSZ electrolyte by bulk diffusion. It is the different point in comparison to usual porous electrodes, especially platinum, which react with oxygen only in TPBs(Three Phase Boundaries). Also ad-atoms at TPBs of Pt are diffused to YSZ electrolyte by interfacial diffusion mechanism. These properties were used for turning down the operating temperature of YSZ from over $600^{\circ}C$ to below $450^{\circ}C$. The different heat-treatment temperature between a working electrode and a reference electrode suppresses the formation of silver oxides and reduces a volatility of Ag as well. Above all, these own characteristics and special processes of Ag improved a long-term stability of a oxygen sensor.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 춘계학술발표대회 개요집
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• pp.263-265
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• 2002

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 춘계학술발표대회 개요집
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• pp.260-262
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• 2002

• 대한화학회지
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• 제37권8호
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• pp.730-734
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• 1993

비양성자성 용매인 N,N-dimethylformamide(DMF) 중에서 Biliverdin(BV)의 전기화학적인 환원거동을 직류폴라로그래프법, 순환전압전류법 및 정전위 전기량법으로 조사하였다. 또한 BV의 최종 환원생성물을 UV-Vis spectroscopy로 조사하였다. DMF 용매 중에서 BV는 -0.71 V vs. Ag/Ag$^+$와 -0.91 V vs. Ag/Ag$^+$ 에서 2개의 환원파를 보였다. 각 환원파의 전류유형은 제 1환원파는 확산지배적인 전류였으며, 제 2환원파는 반응성 전류가 약간 포함된 확산전류이었다. 그리고 제 1단계의 환원과정은 비가역적이었다. 각 환원단계에 관여하는 전자수는 1개씩 이었으며, BV은 DMF 용액 중에서 1전자 2단계의 환원과정을 거쳐서 Bilirubin으로 환원되었다.

• 전기학회논문지
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• 제60권6호
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• pp.1169-1174
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• 2011

CdTe thin-film solar cell technology is well known that it can theoretically improve its conversion efficiency and manufacturing costs compared to the conventional silicon solar cell technology, due to its optical band gap energy (about 1.45eV) for solar energy absorption, high light absorption capability and low cost requirements for producing solar cells. Although the prior studies obtained the high light absorption, CdTe thin film solar cell has not been come up to the sufficient efficiency yet. So, doping method was selected for the improvement of the electrical characteristics in CdTe solar cells. Some elements including Cu, Ag, Cd and Te were generally used for the p-dopant as substitutional acceptors in CdTe thin film. In this study, the sputtering-deposited CdTe thin film was immersed in $AgNO_3$ solution for ion exchange method to dope Ag ions. The effects of immersion temperature and Ag-concentration were investigated on the optical properties and electrical characteristics of CdTe thin film by using Auger electron spectroscopy depth-profile, UV-visible spectrophotometer, and a Hall effect measurement system. The best optical and electrical characteristics were sucessfully obtained by Ag doping at high temperature and concentration. The larger and more uniform diffusion of Ag ions made increase of the Ag ion density in CdTe thin film to decrease the series resistance as well as mede the faster diffusion of light by the metal ions to enhance the light absorption.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• 전기화학회지
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• 제5권1호
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• pp.7-12
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• 2002

염수 전해 공정에서 산소음극형 가스화산전극의 적용에 대해 연구, 조사하였다. 가스확산전극은 반응층, 가스확산층, 급 전체로 구성된다. 반응층은 친수성 카본블랙, 소수성 카본블랙, PTFE(polytetrafluoroethylene), 은거울반응이나 함침법에 의해 담지된 은 촉매로 제조하였다. 가스확산충은 소수성 카본블랙과 PTFE로 제조되며, 반응층 내에 사용되는 급전체는 Ni망을 사용하였다. 실험에 의하면 함침법에 의해 Ag촉매를 반응충 카본에 담지시켜 제작된 전극$(Ag\;10wt\%$,바인더 $20wt\%)$이 산소음극 과전압이 약 700mv, 전해조에 장착하여 측정한 전해전압(전해 조건이 $80^{\circ}C,\;32wt\%$ 가성소다 그리고 $300 mA/cm^2$의 전류 밀도)이 약 2.2V로 가장 우수한 결과를 나타내었다. 이는 기존 공정의 전해전압 3.4V에 비해 $30\%$이상 저감된 결과이다. 또한 개발된 가스확산 전극은 염수 분해용 전해 공정에서 3개월 연속 운전이 가능하였다.

• Elastomers and Composites
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• 제57권1호
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• pp.1-8
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• 2022

In this study, the photo-deposition method was used to introduce Ag onto the surface of TiO₂ to synthesize an Ag-TiO₂ composite. The effects of the varying amounts of AgNO₃ precursor and annealing time periods on the Ag content in the composites, as well as their antibacterial characteristics under visible light conditions were studied. SEM analysis revealed the spherical morphology of the Ag-TiO₂ composite. Compared with TiO₂, the Ag particles were too small to be observed. An XPS analysis of the Ag-TiO₂ surface confirmed the Ag content and showed the peak intensities for elements such as Ag, Ti, O, C, and Si. The highest Ag content was observed when 33.3 wt.% of AgNO₃ and an annealing time of 6 h were employed; this was the optimum annealing time for Ti-Ag-O bonding, in that the lowest number of O bonds and the highest number of Ag bonds were confirmed by XPS analysis. Superior antibacterial properties against Bacillus and Escherichia coli, in addition to the widest inhibition zones were exhibited by the Ag-TiO₂ composite with an increased Ag content in a disk diffusion test, the bacterial reduction rate against Staphylococcus aureus and Escherichia coli being 99.9%.