• Proceedings of the KWS Conference
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• 2002.10a
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• pp.450-455
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• 2002

Cu-cored Sn-Ag solder balls were fabricated by coating pure Sn and Ag on Cu balls. The melting behavior and the solderability of the BGA joint with the Ni/Au coated Cu pad were investigated and were compared with those of the commercial Sn-Ag and Sn-Ag-Cu balls. DSC analyses clarified the melting of Cu-cored solders to start at a rather low temperature, the eutectic temperature of Sn-Ag-Cu. It was ascribed to the diffusion of Cu and Ag into Sn plating during the heating process. After reflow soldering the microstructures of the solder and of the interfacial layer between the solder and the Cu pad were analyzed with SEM and EPMA. By EDX analysis, formation of a eutectic microstructure composing of $\beta$-Sn, Ag$_3$Sn, ad Cu$_{6}$Sn$_{5}$ phases was confirmed in the solder, and the η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer was found to form at the interface between the solder and the Cu pad. By conducting shear tests, it was found that the BGA joint using Cu-cored solder ball could prevent the degradation of joint strength during aging at 423K because of the slower growth me of η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer formed at the solder, pad interface. Furthermore, Cu-cored multi-component Sn-Ag-Bi balls were fabricated by sequentially coating the binary Sn-Ag and Sn-Bi solders on Cu balls. The reflow property of these solder balls was investigated. Melting of these solder balls was clarified to start at the almost same temperature as that of Sn-2Ag-0.75Cu-3Bi solder. A microstructure composing of (Sn), Ag$_3$Sn, Bi and Cu$_{6}$Sn$_{5}$ phases was found to form in the solder ball, and a reaction layer containing primarily η'-(Au, Co, Cu, Ni)$_{6}$Sn$_{5}$ was found at the interface with Ni/Au coated Cu pad after reflow soldering. By conducting shear test, it was found that the BGA joints using this Cu-core solder balls hardly degraded their joint shear strength during aging at 423K due to the slower growth rate of the η'-(Au, Cu, Ni)$_{6}$Sn$_{5}$ reaction layer at the solder/pad interface.he solder/pad interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.73-76
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• 1995

In this study, the slab waveguide was fabricated using potassium-nitride(KNO$_3$) or silver-nitride (AgNO$_3$) molten sources by ion-exchange process. The effective refractive indices of waveguide were measured by Prism-Coupling method. and The characteristics of waveguide(mode dispersion, effective diffusion depth. surface refractive index, diffusion coefficient, and refractive index profile etc,) were investigated by WKB method, In the case of potassium ion-exchange, the computer calculation showed that the refractive index profile of waveguide followed Gaussian function, the surface refractive index increased with ion-exchange time and the effective diffusion depth increased a little as ion-exchange time increased, while the surface refractive index of silver ion-exchanged waveguide decreased with ion-exchange time because of the ion depletion on the surface of waveguide, and the effective diffusion depth seriously with ion-exchange tim. Double ion-exchanged waveguide was fabricated by performing silver ion-exchange after potassium ion-exchange. Double ion-exchanged waveguide had a tight mode binding force since the surface refractive index was larger than single step ion-exchanged waveguide.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.4
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• pp.458-464
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• 2011

Recently, one of the hydrogen production methods has attracted using dense metallic membrane. It has high hydrogen permeation and selectivity which hardly could adopt industrial product because of high cost, hydrogen embrittlment and thermal stability. Meanwhile, vanadium has high hydrogen solubility and it use to instead of Pd-Ag amorphous membrane. Aluminum carried out blocking hydrogen diffusion on grain boundary therefore protecting hydrogen embrittlement. Most of dense metallic membrane is solution diffusion mechanism. The solution diffusion mechanism was very similar hydrogen storing steps such as steps of metal hydride. Thus, V-Al composites were fabricated to use hydrogen induced mechanical alloying. The fabricated V-Al composites were characterized by XRD, SEM, EDS and simultaneous TG/DSC analyses. The hydrogenation behaviors were evaluated using a Sievert's type automatic PCT apparatus. The hydrogenation behaviors of V-Al composites was evaluated too low hydrogen stored capacity and fast hydrogenation kinetics. In PCI results, V-Al composites had low hydrogen solubility, in spite of that, hydrogen kinetics was calculated very fast and hydrogen absorption/desorption contents were same capacity.

• Journal of the Korean institute of surface engineering
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• v.48 no.1
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• pp.11-22
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• 2015

Pd alloy hydrogen membranes for hydrogen purification and separation need thermal stability at high temperature for commercial applications. Intermetallic diffusion between the Pd alloy film and the porous metal support gives rise to serious problems in long-term stability of Pd alloy membranes. Ceramic barriers are widely used to prevent the intermetallic diffusion from the porous metal support. However, these layers result in poor adhesion at the interface between film and barrier because of the fundamentally poor chemical affinity and a large thermal stress. In this study, we developed Pd alloy membranes having a dense microstructure and saturated composition on modified metal supports by advanced DC magnetron sputtering and heat treatment for enhanced thermal stability. Experimental results showed that Pd-Cu and Pd-Ag alloy membranes had considerably enhanced long-term stability owing to stable, dense alloy film microstructure and saturated composition, effective diffusion barrier, and good adhesive interface layer.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.59-64
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• 2013

In-situ annealing tests of Cu/Ni/Au/Sn-Ag/Cu micro-bump for 3D IC package were performed in an scanning electron microscope chamber at $135-170^{\circ}C$ in order to investigate the growth kinetics of intermetallic compound (IMC). The IMC growth behaviors of both $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ follow linear relationship with the square root of the annealing time, which could be understood by the dominant diffusion mechanism. Two IMC phases with slightly different compositions, that is, $(Cu,Au^a)_6Sn_5$ and $(Cu,Au^b)_6Sn_5$ formed at Cu/solder interface after bonding and grew with increased annealing time. By the way, $Cu_3Sn$ and $(Cu,Au^b)_6Sn_5$ phases formed at the interfaces between $(Cu,Ni,Au)_6Sn_5$ and Ni/Sn, respectively, and both grew with increased annealing time. The activation energies for $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ IMC growths during annealing were 0.69 and 0.84 eV, respectively, where Ni layer seems to serve as diffusion barrier for extensive Cu-Sn IMC formation which is expected to contribute to the improvement of electrical reliability of micro-bump.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.3
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• pp.55-61
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• 2022

In this study, properties of Pb-free solder joints which were combined using Sn-3.0Ag-0.5Cu (SAC305) Pb-free solder with a mid-temperature type of melting temperature and Sn-57Bi-1Ag Pb-free solder with a low-temperature type of melting temperature were reported. Combined Pb-free solder joints were formed by reflow soldering processes with ball grid array (BGA) packages which have SAC305 solder balls and flame retardant-4 (FR-4) printed circuit boards (PCBs) which printed Sn-57Bi-1Ag solder paste. The reflow soldering processes were performed with two types of temperature profiles and interfacial properties of combined Pb-free solder joints such as interfacial reactions, formations of intermetallic compounds (IMCs), diffusion mechanisms of Bi, and so on were analyzed with the reflow process conditions. In order to compare reliability characteristics of combined Pb-free solder joints, we also conducted thermal shock test and analyzed changes of mechanical properties for joints from a shear test during the thermal shock test.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.307-313
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• 2005

Electromigration behavior in the Sn96.5Ag3.0Cu0.5 solder lines was investigated and compared Sn96.5Ag3.0Cu0.5 with eutectic SnPb. Measurements were made for relevant parameters for electromigration of the solder, such as drift velocity, threshold current density, activation energy, as well as the product of diffusivity and effective charge number (DZ$\ast$). The threshold current density were measured to be $2.38{\times}10^4A/cm^2$ at $140^{\circ}C$ and the value represented the maximum current density which the SnAgCu solder can carry without electromigration damage at the stressing temperatures. The electromigration energy was measured to 0.56 eV in the temperature range of $110-160^{\circ}C$. The measured products of diffusivity and the effective charge number, DZ$\ast$ were $3.12{\times}10^{-10} cm^2/s$ at $110^{\circ}C$, $4.66{\times}10^{-10} cm^2/s$ at $125^{\circ}C$, $8.76{\times}10^{-10} cm^2/s$ at $140^{\circ}C$, $2.14{\times}10^{-9}cm^2/s$ at $160^{\circ}C$ SnPb solder existed incubation stage, while SnAgCu did not have incubation stage. It was thought that the diffusion mechanism of SnAgCu was different from that of SnPb.

• Journal of the Korean Chemical Society
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• v.47 no.2
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• pp.121-126
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• 2003

Tris(2-cyclohexylaminoethyl)amine (L) was synthesized by the Schiff base condensation reaction of tris(2-aminoethyl)amine with cyclohexanone, followed by reduction. The thermodynamic characteristics, mole ratio and formation constant of [Zn(II)-L] complex were measured by the cyclic voltammetry and isothermal titration. In the case of Zn(II), well-defined cathodic and anodic peak were obtained at -1.02V and -0.48V vs Ag/AgCl , respectively. For the [Zn(II)-L] complex, both peaks were obtained at -1.19V and -0.45V vs Ag/AgCl, respectively. In addition, the peak height gradually increases as the scan rate increases, suggesting that the currents obtained were diffusion - controlled. The mole ratio and stability constant of the complex measured cyclic voltammerty were 1:1 and logK$_f$= 5.8, respectively. And the mole ratio and stability constant of the complexe calculated by isothermal titration method was 1:1 and logK =5.4, respectively. ${\Delta}$H, ${\Delta}$G and T${\Delta}$S for the complex formation were -53.0 kJ/mol, -31.1 kJ/mol, and -21.9 J/K at 25 ${\circ}$C, respectively.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.09a
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• pp.233-241
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• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces strictly related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.

• Journal of the Korean Chemical Society
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• v.23 no.3
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• pp.180-185
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• 1979

Electrochemical reduction behavior from 2-butyne-1, 4-diol (BID) to 2-butene-1,4-diol (BED) by the use of various cathodes, such as Ti, Zr, Ni, Pt, Cu, Ag, Au, Zn, Hg, Pb and graphite has been studied. It has been found that cathodic polarization curve with metal of IB subgroup such as Cu, Ag and Au consisted of one wave in BID-alkaline solution, whereas it was not formed any wave in BED solution. Therefore, it was found that the cathode which was the most suitable in order to proceed in this reaction was Cu, Ag and Au. At cyclic voltammetry using a silver cathode in BID-alkaline solution, the current of the peak was proportional to square root of the sweep rate of potential and also proportional to concentration of BID. Activation energy was calculated for 3.75 kcal/mole from the plot of log $I_l$ vs. 1/T. Consequently, the reduction current of BID with a silver cathode in alkaline solution was found the diffusion current.