• 소성∙가공
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• 제31권1호
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• pp.29-38
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• 2022

Recently, the composite material market is gradually growing. Various composite forming processes have been developed in order to reduce the production cost of the composite material. Unlike the conventional forming process, the microwave composite forming process has the advantage of reducing the processing time because the composite material is heated directly or indirectly at the same time. Due to this advantage, in this study, a double cantilever beam test was conducted with specimens manufactured by the microwave composite forming process. The purpose of this study was to compare mode-I energy release rate for specimens manufactured by prepreg compression forming and microwave composite forming processes. First, a microwave oven was proposed to conduct the microwave composite forming process. Double cantilever beam specimens were manufactured. After that, the double cantilever beam test was conducted to obtain the mode-I energy release rate. Mode-I energy release rates of specimens manufactured by the microwave composite forming and prepreg compression forming processes were then compared. As a result, mode-I energy release rates of specimens fabricated by the microwave composite forming process were similar to those fabricated with the prepreg compression forming process with a relatively reduced process time.

• Korean Chemical Engineering Research
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• 제46권3호
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• pp.619-625
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• 2008

패시베이션 및 절연 목적으로 이용하는 플라즈마 화학기상증착(PECVD)법에 의해 증착된 무기막과 웨이퍼 간 본딩 접착제로 이용하는 유기 박막 적층면의, 열 순환에 의한 잔류 응력 및 본딩 결합력의 효과를 4점 굽힙 시험법과 웨이퍼 곡률 측정법에 의해 평가하였다. 무기막으로는 산화 규소막($SiO_2$)과 산화 질화막($SiN_x$)이, 유기 박막으로는 BCB(Benzocyclobutene)가 이용되었다. 이를 통해, 열 순환 동안 무기막과 유기막 사이에서의 잔류 응력과 본딩 결합력의 상관관계에 대한 모델식을 개발하였다. 최대 온도 350 및 $400^{\circ}C$에서 수행한 열 순환 공정에서, PECVD 산화 질화막과 BCB로 구성된 다층막에서, 본딩 결합력은 첫 번째 순환 공정 동안 감소한다. 이는 산화질화막 내 잔류인장응력의 증가가 다층막의 잔류응력에 의해 변형되는 에너지 및 본딩 결합력의 감소를 유도한다는 모델식의 예측과 일치하며, PECVD 산화 규소막내 잔류 압축 응력의 감소가 다층막의 잔류응력에 의해 변형되는 에너지 및 본딩 결합력 상승을 이끄는 산화 규소막과 BCB 구조의 본딩 결합력 결과와 비교된다. 이러한 산화 규소막과 산화 질화막을 포함한 다층막의 상반된 본딩 결합력은 증착 공정 후 막 내에 형성된 수소 결합이 고온 순환 공정 동안 축합 반응을 통해 더 밀집되어 인장응력을 형성하기 때문임을 알 수 있었다.

• 폴리머
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• 제30권5호
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• pp.445-452
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• 2006

본 연구에서는 슈반세포와 다양한 세포 부착인자로 코팅된 고분자 표면과의 상호관계에 대해 연구하였다. 세포 접착인자로 알려진 피브로넥틴, 피브리노겐, 라미닌, 비트로넥틴, 폴리-D-라이신 및 폴리-L-라이신을 PLGA 필름에 코팅하고 물 접촉각 측정과 ESCA 분석을 실시해 표면특성을 평가하구 접착인자로 코팅하거나 하지 않은 PLGA 필름의 표면에 슈반세포를 배양한 후 세포 계수와 SEM 관찰을 통해 세포 부착과 성장을 알아보았다. 세포 계수 결과에서 세포 부착은 PLGA 표면의 단백질 흡착과 관련 있음을 확인할 수 있었으며, 세포의 성장은 배양액의 우태아혈청 함량의 영향을 받는 것으로 나타났다. 이러한 결과를 통해 슈반세포의 접착과 성장이 특정한 세포 접착인자에 의해 영향을 받음을 알 수 있었다. 본 실험의 결과를 통해 조직공학적 신경 재생에 응용하기 위한 신경유도관의 개발에서 세포의 부착과 성장을 향상시키기 위해서는 세포의 종류 및 배양조건에 따라 신경유도관이 적절한 표면환경을 제공해야 함이 필수적임을 알 수 있었다.

• Composites Research
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• 제20권3호
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• pp.8-16
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• 2007

자동차 충돌이나 전복사고에 있어서 부재들의 변형은 축방향 압축붕괴와 함께 굽힘붕괴가 혼합된 변형양상을 보여주고 있으며, 자동차에 사용되는 대부분의 박벽관 부재는 굽힘붕괴가 주된 붕괴형태로 나타나고 있다. 하지만 혼성 사각관의 굽힘붕괴에 대한 연구는 축방향 붕괴의 연구에 비해 많이 부족한 현실이다. 본 논문에서는 알루미늄-복합재료 혼성 사각관의 굽힘 붕괴 거동 및 에너지 흡수 특성을 실험적 방법으로 연구하여 경량화 구조부재로서의 적용가능성을 조사하였다. 접착필름 살입형 경화법으로 제작된 알루미늄-복합재료 혼성 사각관 보에 대해 복합 재료 층의 적층두께와 적층 각에 따른 굽힘 성능을 평가하였다. 본 혼성 사각관 보는 복합재료만으로 구성된 사각관 보에서 발생할 수 있는 불안정한 붕괴모드를 안정적인 붕괴로 전환시키면서, 단순 알루미늄 사각관에 비해 에너지 흡수 능력이 향상되었고, 특히 $[0^{\circ}/90^{\circ}]s$를 적층한 혼성 사각관의 경우 벽두께 1mm인 알루미늄 사각관 시험편과 비교하여 흡수에너지가 1.78배 증가하였고 단위무게당 흡수에너지는 1.29배로 증가함을 보였다.

• Composites Research
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• 제37권3호
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• pp.219-225
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• 2024

정찰위성의 탑재체인 위성용 전개형 반사판 안테나는 발사 환경에 대한 구조안정성 및 궤도 환경에 대한 운용 성능을 고려하여 경량화, 고성능의 구조 개발이 필수적이다. 그 중, 복합재 주반사판은 전개형 반사판 안테나를 구성하는 핵심 구성품이며, 발사체 탑재 성능을 고려한 경량 설계 뿐만 아니라 위성체 임무 수행 중 민첩한 자세제어 기동 이후 높은 품질의 위성 영상을 획득하기 위해서는 높은 전개 시 강성을 갖는 고성능의 주반사판 개발이 요구된다. 주반사판 개발을 위해 전개형 반사판 안테나를 구성하는 복합재 주반사판의 적층 설계 및 재료 물성에 따른 구조적 성능을 분석하여 주반사판의 초기 설계안을 도출하였으며, 도출된 초기 설계안을 기준으로 제작 공정을 변수로 4가지 타입의 복합재 주반사판을 제작하였다. 공정 변수로는 복합재 구조의 성형 공정, 탄소 섬유 복합재 시트와 허니콤 코어 간 접착 필름의 적용 유/무, 샌드위치 복합재 내부의 벤팅 경로를 선정하였다. 제작된 4가지 종류의 주반사판에 대해 무게 측정, 비파괴 검사, 표면오차 측정 및 모드 시험을 통한 전개 시 강성 측정을 수행하였으며, 경량 및 구조적 성능을 향상시킬 수 있도록 접착 필름을 미적용하며 벤팅 경로를 포함하는 주반사판 제작 공정을 선정하여 SAR(합성 개구 안테나)를 포함한 위성체에 실 적용이 가능한 복합재 주반사판을 개발하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.311-311
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• 2009

Carbon nanotubes (CNTs) belong to an ideal material for field emitters because of their superior electrical, mechanical, and chemical properties together with unique geometric features. Several applications of CNTs to field emitters have been demonstrated in electron emission devices such as field emission display (FED), backlight unit (BLU), X-ray source, etc. In this study, we fabricated a CNT cathode by using filtration processes. First, an aqueous CNT solution was prepared by ultrasonically dispersing purified single-walled CNTs (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). The aqueous CNT solution in a milliliter or even several tens of micro-litters was filtered by an alumina membrane through the vacuum filtration, and an ultra-thin CNT film was formed onto the alumina membrane. Thereafter, the alumina membrane was solvated by acetone, and the floating CNT film was easily transferred to indium-tin-oxide (ITO) glass substrate in an area defined as 1 cm with a film mask. The CNT film was subjected to an activation process with an adhesive roller, erecting the CNTs up to serve as electron emitters. In order to measure their luminance characteristics, an ITO-coated glass substrate having phosphor was employed as an anode plate. Our field emitter array (FEA) was fairly transparent unlike conventional FEAs, which enabled light to emit not only through the anode frontside but also through the cathode backside, where luminace on the cathode backside was higher than that on the anode frontside. Futhermore, we added a reflecting metal layer to cathode or anode side to enhance the luminance of light passing through the other side. In one case, the metal layer was formed onto the bottom face of the cathode substrate and reflected the light back so that light passed only through the anode substrate. In the other case, the reflecting layer coated on the anode substrate made all light go only through the cathode substrate. Among the two cases, the latter showed higher luminance than the former. This study will discuss the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the either side.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• 한국표면공학회지
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• 제49권2호
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• pp.166-171
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• 2016

Cathodic protection is widely recognized as the most cost effective and technically appropriate corrosion prevention methodology for the port, offshore structures, ships. When applying the cathodic protection method to metal facilities in seawater, on the surface of the metal facilities a compound of calcium carbonate($CaCO_3$) or magnesium hydroxide($Mg(OH)_2$) films are formed by $Ca^{2+}$ and $Mg^{2+}$ ions among the many ionic components dissolving in the seawater. And calcareous deposit films such as $CaCO_3$ and $Mg(OH)_2$ etc. are formed by the surface of the steel product. These calcareous deposit film functions as a barrier against the corrosive environment, leading to a decrease in current demand. On the other hand, the general calcareous deposit film is a compound like ceramics. Therefore, there may be some problems such as weaker adhesive power and the longer time of film formation uniting with the base metal. In this study, we tried to determine and control the optimal condition through applying the principle of cathodic current process to form calcareous deposit film of uniform and compact on steel plate. The quantity of precipitates was analyzed, and both the morphology, component and crystal structure were analyzed as well through SEM, EDS and XRD. And based on the previous analysis, it was elucidated mechanism of calcareous deposit film formed in the sacrificial anode type (Al, Zn) and current density (1, 3, $5A/m^2$) conditions. In addition, the taping test was performed to evaluate the adhesion.

• 한국표면공학회지
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• 제48권2호
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• pp.43-49
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• 2015

This study reports a fabrication of $TiO_2$ on the surface of dental implants by pulsed d.c. magnetron sputtering from a Ti target. A systematic investigation on the microstructure and mechanical properties of $TiO_2$ films was carried out with the variation of $O_2$ contents and substrate temperatures. The effects of deposition parameters on the fabricated structures were investigated by X-ray diffraction (XRD) technique and field emission scanning electron microscope (FE-SEM). Hydrophilic properties were evaluated by measuring water contact angles on the film surface. With increasing $O_2$ contents up to 40%, surface roughness of $TiO_2$ film increased while relatively smooth surface was obtained with 50% $O_2$ contents. Surface roughness and adhesion strength both increased as substrate temperature increased up to $200^{\circ}C$. From these results, hydrophilic and adhesive properties of the present $TiO_2$ films synthesized with 40% $O_2$ at $200^{\circ}C$ are regarded to be suitable for bio-compatible applications.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.