• 제목/요약/키워드: Additional etching

검색결과 72건 처리시간 0.027초

Reactive Ion Etching Process Integration on Monocrystalline Silicon Solar Cell for Industrial Production

  • Yoo, Chang Youn;Meemongkolkiat, Vichai;Hong, Keunkee;Kim, Jisun;Lee, Eunjoo;Kim, Dong Seop
    • Current Photovoltaic Research
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    • 제5권4호
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    • pp.105-108
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    • 2017
  • The reactive ion etching (RIE) technology which enables nano-texturatization of surface is applied on monocrystalline silicon solar cell. The additional RIE process on alkalized textured surface further improves the blue response and short circuit current. Such parameter is characterized by surface reflectance and quantum efficiency measurement. By varying the RIE process time and matching the subsequent processes, the absolute efficiency gain of 0.13% is achieved. However, the result indicates potential efficiency gain could be higher due to process integration. The critical etch process time is discussed which minimizes both front surface reflectance and etching damage, considering the challenges of required system throughput in industry.

Characterization of Band Gaps of Silicon Quantum Dots Synthesized by Etching Silicon Nanopowder with Aqueous Hydrofluoric Acid and Nitric Acid

  • Le, Thu-Huong;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • 제35권5호
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    • pp.1523-1528
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    • 2014
  • Silicon quantum dots (Si QDs) were synthesized by etching silicon nanopowder with aqueous hydrofluoric acid (HF) and nitric acid ($HNO_3$). Then, the hydride-terminated Si QDs (H-Si QDs) were functionalized by 1- octadecene (ODE). By only controlling the etching time, the maximum luminescence peak of octadecylterminated Si QDs (ODE-Si QDs) was tuned from 404 nm to 507 nm. The average optical gap was increased from 2.60 eV (ODE-Si QDs-5 min) for 5 min of etching to 3.20 eV (ODE-Si QDs-15 min) for 15 min of etching, and to 3.40 eV (ODE-Si QDs-30 min) for 30 min of etching. The electron affinities (EA), ionization potentials (IP), and quasi-particle gap (${\varepsilon}^{qp}_{gap}$) of the Si QDs were determined by cyclic voltammetry (CV). The quasi-particle gaps obtained from the CV were in good agreement with the average optical gap values from UV-vis absorption. In the case of the ODE-Si QDs-30 min sample, the difference between the quasi-particle gap and the average optical gap gives the electron-hole Coulombic interaction energy. The additional electronic levels of the ODE-Si QDs-30 min and ODE-Si QDs-15 min samples determined by the CV results are interpreted to have originated from the Si=O bond terminating Si QD.

이온빔 스퍼터링법에 의한 다층막의 표면특성변화 (The surface propery change of multi-layer thin film on ceramic substrate by ion beam sputtering)

  • 이찬영;이재상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.259-259
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    • 2008
  • The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

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상아질 표면처리방법이 compomer의 전단결합 강도에 미치는 영향에 관한 연구 (EFFECT ON THE SHEAR BOND STRENGTH OF A COMPOMER TO DENTIN ACCORDING TO SURFACE CONDITIONING)

  • 김수미;조영곤;문주훈
    • Restorative Dentistry and Endodontics
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    • 제23권2호
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    • pp.597-606
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    • 1998
  • The purpose of this study was to evaluate the shear bond strength of the Compoglass Carvifil bonded on the dentin surface according to etching or non-etching and two time application or three time application of single component. Human non-carious 60 extracted 3rd molar were used. The occlusal dentin surfaces of all teeth were exposed with Diamond Wheel Saw and polished with Lapping & Polishing machine(South Bay Technology Co., U.S.A). The teeth were then distributed randomly into four groups of 15 teeth each and dentin surface were conditioned as following. Control group : Non-etching, two times application of Syntac Single Component. (According to manufacture's instruction) Experimental group 1 : Non-etching, three times application of Syntac Single Component. Experimental group : 2 Etching, two times application of Syntac Single Component. Experimental group 3 : Etching, three times application of Syntac Single Component. Compoglass were bonded to exposed dentin surfaces and all samples were placed in distilled water for 7 days. The shear bond strengths were measured by universal testing machine (SHIMADAZU AUTOGRAPH, AGS-4D., Japan). The results were as follows : 1. Experimental group 3 revealed the highest value (30.75${\pm}$4.74 MPa) and control group revealed the lowest value(14.85${\pm}$2.69 MPa). There was significant difference of shear bond strength among four groups(P<0.01) 2. The acid-etching groups (experimental group 2, 3) had higher shear bond strengths than non etching groups(control group and experimental group 1). 3. The additional application of Syntac single component groups revealed a higher bond strength than two times application groups (control group and experimental group 2).

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식각 표면패턴의 사출성형에 관한 실험적 연구 (An Experimental Study on Injection Molding of Etched Surface Pattern)

  • ;이희관;양균의
    • 한국정밀공학회지
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    • 제20권2호
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    • pp.25-32
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    • 2003
  • Molding properties of etched surface pattern are presented. Injection molding has given attention on improving dimensional accuracy and productivity. However, the molding of etched surface pattern on plastic parts is not researched relatively for its additional values, which can meet design function and customer's attraction. Specimens, whose surface patterns are made by print-type etching, are investigated. The molding properties of surface pattern are estimated with roughness deviation of surface pattern on part and mold. The etching properties are related to physical properties of plastic materials and surface roughness of etched pattern. Also, flow mark and gate location can give influence on surface pattern molding. The experimental result can contribute to good molding of surface pattern in injection molding.

공정 디자인에 따른 클래드강 맞대기 용접부의 기계적 특성에 관한 연구 (A Study on the Mechanical Properties of Butt Welding Zone of Clad Steel According to the Process Design)

  • 이정현;박재원
    • 한국생산제조학회지
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    • 제21권4호
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    • pp.532-540
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    • 2012
  • In this study, some considerations have been suggested in developing on-site techniques to evaluate the sensitization of stainless steels. Electrochemical potentiokinetic reactivation (EPR) technique is known to be a candidate tool for field applications since it enables quantitative assessment in reasonable test time, compared to oxalic etching (ditch) technique. The on-site application of the test method imposes additional restrictions on the selection of the test method (for example, minimum surface preparation requirement, insensitivity to testing temperature, etc.). The EPR and etching techniques have been compared in order to sensitization of stainless steel structures. It has been widely reported that the maximum sensitivity in the welded structure of stainless steel is shown at heat-affected zone (HAZ) than weldments with cast structure. In this work, sectioned weldments and external surfaces were investigated to reveal the degree of sensitization by the etching and the results were compared with those of EPR test. The EPR test showed little sensitivity to surface roughness and test temperature.

접착레진의 부가도포가 레진 시멘트의 결합강도에 미치는 영향에 대한 연구 (The Effect of Bonding Resin on Bond Strength of Dual-Cure Resin Cements)

  • 김덕수;박상혁;최기운;최경규
    • Restorative Dentistry and Endodontics
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    • 제32권5호
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    • pp.426-436
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    • 2007
  • 본 연구에서는 접착레진의 부가적인 도포가 레진 시멘트의 결합강도에 미치는 영향을 연구하였다. One-Step Plus와 Choice, Single Bond와 Rely X ARC, One-Up Bond F와 Bistite II DC를 사용하였고 접착레진으로 D/E Bonding resin과 Pre-Bond Resin을 선택하였다. 적용 및 광중합 유무에 따라 12개의 군을 설정하였다. 제 3대구치의 건전한 상아질 면에 간접 복합레진 수복물을 제작하여 접착을 시행하고$1\;{\times}\;1\;mm^2$의 시편을 만들어 미세인장강도를 측정하였다. 또한 투과전자현미경으로 접착계면을 관찰하였다. 그리하여 다음과 같은 결론을 얻을 수 있었다. 1. Single Bond와 Rely X ARC, 그리고 One-Step Plus와 Choice를 조합하고 광중합을 시행한 군에서, 접착 레진을 부가적으로 도포할 경우 미세인장강도가 증가하였다. 2. One-Up Bond F와 Bistite II DC를 조합한 군에서 접착레진의 부가적인 도포에 의한 미세인장강도의 차이는 나타나지 않았다. 3. 광중합을 시행한 군들 중, One-Step Plus와 Choice를 조합한 군이 다른 군보다 높은 미세인장결합강도를 보였다. 4. 자가중합만을 시행한 군간에는 접착레진의 부가적인 도포에 의한 차이가 나타나지 않았다. 투과전자현미경 관찰을 시행하여 광중합을 시행하고 접착레진을 부가적으로 도포한 실험군에서 미세누출이 감소하고 접착층의 두께가 증가한 것을 확인할 수 있었다. 본 연구결과 완전산부식 상아질 접착제와 이중중합 레진 시멘트를 사용할 경우 부가적인 접착레진의 도포가 임상적으로 유용할 수 있다는 사실을 확인할 수 있었다.

Microabrasive로 처리한 상아질표면에 대한 복합레진의 결합강도에 관한 연구 (A STUDY OF THE BOND STRENGTHS OF COMPOSITE RESIN TO DENTIN SURFACES PREPARED WITH MICROABRASIVE)

  • 최경규;민병순
    • Restorative Dentistry and Endodontics
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    • 제22권1호
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    • pp.61-75
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    • 1997
  • The bond strengths of composite resin to tooth dentin vary with the methods of cavity preparation and surface treatment. Recent developments in techniques of dentinal surface treatment have renewed interest in microabrasive as a means of tooth preparation, The purpose of this study was to determine the effects of a new method of cavity preparation on the bond of composite resin to dentin. Freshly extracted 144 healthy human third molars were used in this study. The dentin surfaces prepared with #600 SiC abrasive paper were divided into control and air abrasion groups according to the method of dentin surface preparation using different combinations of delivery pressure, time, and acid etching. The shear bond strengths were measured after the composite resin (Clearfil Photo Bright) was bonded to prepared dentin surfaces by light-curing using a dentin bonding system (All-bond 2), In addition, the average surface roughness was measured to investigate the effect of differently prepared dentin surfaces on the shear bond strengths. The surface changes of prepared dentin and the debonded dentin surfaces were observed with SEM (S-2300, Hitachi Co., Japan). The following results from this-study were obtained ; 1. There was no significant difference of shear bond strengths according to the changes of delivery pressure and time. 2. The shear bond strengths were lower than the control in the air abraded-only groups, but those of the additional acid-etched groups were higher than the control. 3. The shear bond strengths to all air-abraded surfaces were increased by acid etching. 4. The correlation between shear bond strengths and surface roughness was not certain, although the mean surface roughness of all air-abraded surfaces has increased evidently while it has slightly decreased for additional acid etching. 5. On SEM examination, the dentinal tubules were almost occluded in the air abraded-only groups, but those were opened in the additional acid-etched groups. 6. The debonded surfaces were showed adhesive failure mode in the air abraded- only groups, while those were showed mainly the mixed and cohesive failure mode in the additional acid-etched groups. These results suggest that the layer produced during cavity preparation or surface treatment with air abrasion must be removed for maximum bond strength of composite resin to dentin.

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습식 에칭 공정에서의 과산화수소 이상반응에 대한 안전 대책 및 제어에 관한 연구 (A study on Safety Management and Control in Wet-Etching Process for H2O2 Reactions)

  • 유흥렬;손영득
    • 한국산학기술학회논문지
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    • 제19권4호
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    • pp.650-656
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    • 2018
  • TFT-LCD 산업은 반도체와 유사한 공정기술을 갖는 대규모 장치 산업으로 일종의 Giant Microelectronics 산업이다. 습식 에칭(Wet Etching)은 전체 TFT 공정에서 비교적 큰 비중을 차지하고 있지만 발표된 연구사례는 부족한 실정이다. 그 주요 원인은 반응이 일어나는 에칭액(Etchant) 성분이 기업의 비밀로 간주되어 외부에 발표되는 사례가 거의 없기 때문이다. 최근 대면적 LCD 제조를 위하여 사용되는 알루미늄(Al)과 구리(Cu)는 습식 에칭을 진행하기에 매우 까다로운 물질이다. 저 저항성 재료인 Cu는 습식 에칭 공정에서만 가능하며 높은 속도와 낮은 실패율, 적은 소비전력으로 Al 에칭 대용으로 사용하고 있다. 그리고 에칭액으로 사용하는 과산화수소($H_2O_2$)의 이상 반응으로 추가적인 배관 및 전기적인 안전장치가 필요하다. 본 논문에서는 과산화수소의 이상 반응을 제한하지는 못하나 이상 반응 발생 시 설비의 피해를 최소화 할 수 있는 방법을 제안한다. 또한 최근에 알루미늄 에칭설비에서 구리 에칭설비로 변경하는 사례가 많아 구리 에칭설비에 대한 하드웨어 인터록을 제안하고 안전 등급이 높은 안전 PLC로 구현하여 이상 반응에 대한 대비책을 강구하는 방안을 제안한다.

광조형법을 이용한 고분자 리소그래피에 관한 연구 (A Study on the Polymer Lithography using Stereolithography)

  • 정영대;이현섭;손재혁;조인호;정해도
    • 한국정밀공학회지
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    • 제22권1호
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    • pp.199-206
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    • 2005
  • Mask manufacturing is a high COC and COO process in developing of semiconductor devices because of mask production tool with high resolution. Direct writing has been thought to be the one of the patterning method to cope with development or small-lot production of the device. This study consists two categories. One is the additional process of the direct and maskless patterning generation using SLA for easy and convenient application and the other is a removal process using wet-etching process. In this study, cured status of epoxy pattern is most important parameter because of the beer-lambert law according to the diffusion of UV light. In order to improve the contact force between patterns and substrate, prime process was performed and to remove the semi-cured resin which makes a bad effects to the pattern, spin cleaning process using TPM was also performed. At a removal process, contact force between photo-curable resin as an etching mask and Si wafer is important parameter.