• 한국세라믹학회지
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• 제53권5호
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• pp.478-482
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• 2016

Metal-supported SOFCs have been investigated to overcome the disadvantages of ceramic-supported SOFCs, including issues related to mechanical strength and sealing. In the case of ceramic-supported cells, the mechanical support is a brittle ceramic or cermet, and it contains expensive materials. However, metal-supported cells utilize ceramic layers that are only as thick as necessary for electrochemical functioning, thereby compensating for the disadvantages of ceramic-supported cells. The mechanical support is fabricated from inexpensive and robust metals, and the electrochemically active layers are applied directly to the metal support. The metal-supported SOFCs thus can provide a reduced system cost, ease of manufacturing, and operational advantages. Owing to these features, metal-supported SOFCs are a very promising candidate for commercialization. Given the importance of studying worldwide trends in metal-supported SOFC research for performance evaluation, this paper reviews development trends with a focus on fabrication methods. Furthermore, a novel fabrication method developed in KAIST is discussed.

• 공업화학
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• 제30권4호
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• pp.460-465
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• 2019

본 연구에서는 각종 산업시설에서 발생하는 $H_2S$를 처리하기 위하여 금속산화물 기반의 흡착제의 활성물질 최적화 및 입상형 흡착제 제조에 관한 연구를 진행하였다. 적용되는 흡착제는 금속산화물 중 높은 물리화학적 안정성과 비교적 큰 비표면적을 가지는 $TiO_2$를 이용하여 활성물질의 종류와 함량을 다르게 제조하였다. 이러한 흡착제의 물리화학적 특성과 흡착성능과의 상관관계를 확인한 결과 활성금속 중 대표적인 알칼리 물질인 KI를 첨착한 흡착제의 흡착성능이 가장 우수하였으며, 함량과 흡착성능의 관계는 비례하지 않고 volcano plot을 나타냈다. XRD, SEM, BET 분석을 통해 특정 함량 이상부터 활성물질이 표면에 노출됨을 확인하였으며, 비표면적은 $40{\sim}100m^2/g$, 기공의 부피는 $0.1{\sim}0.3cm^3/g$의 기공 특성을 가질 때 흡착성능이 가장 우수한 것으로 판단하였다. 실 공정 적용을 위해 흡착제를 입상형으로 성형 또는 세라믹 지지체에 코팅을 진행하였으며, 성형보다는 세라믹 지지체에 흡착제를 코팅하였을 때 우수한 흡착성능을 나타내는 것으로 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.1081-1081
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• 2002

Top emission organic EL devices were fabricated by using metal-doped cathode interface layer to achieve low drive voltages. Also, facing-targets-type sputtering was used to sputter indium-tin oxide layer on top of organic active layer. The devices fabricated in this study showed reasonably high external quantum efficiency of about 1 % which is comparable to that of bottom-emission-type devices.

• 한국생명과학회:학술대회논문집
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• 한국생명과학회 2002년도 제37회 국제학술심포지움 및 추계학술대회
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• pp.87-87
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• 2002

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2005년도 춘계학술발표대회 개요집
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• pp.57-59
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• 2005

• Journal of Welding and Joining
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• 제9권4호
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• pp.17-27
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• 1991

The direct brazing technology which could be used for the simplification of brazing process and the improvement of brazed joint quality was studied with $Al_2O_3$ and stainless steels. The brazing of $Al_2O_3$ to STS304 or STS430 was performed under different brazing conditions such as brazing filler metal, temperature, heating rate and brazing time. Microstructural observation and chemical analysis be SEM/EPAM were carried out to verify the quality of brazed joints. 4-point bending strength of brazed joints was also measured to find the optimal brazing conditions. The results showed that, in brazing of $Al_2O_3$, the mixed oxide layer resulted from the reaction between Ti in filler metal and oxide layer on the material surface to be brazed was found to be bery important for the joint quality. The width of oxide layer varied with the brazing conditions such as brazing time, heating rate and chemical composition of filler metals. The strength of brazed joints was more affected by the type of materials and their thermal properties than by brazing heat cycle.

• 대한전자공학회논문지
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• 제22권6호
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• pp.7-12
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• 1985

Oxygen-active 금속, 천이금속 및 oxygen-noble 금속, 즉, Al, Ti, Mn, Ni 그리고 Cuㄹ박막의 광투과율을 조사하였다. Slide-glass 위에 $6{\times}10^{-5}$ ~ $2{\times}10^{-4}$ mbr 압력범위와 0.5 ~ $2{\AA}$/sec 의 증착속도 범위에서 두께를 $85{\AA}$내외로 하여 증착하였다. 증착속도와 진공도는 금속박막의 광학적 성질에 큰 영향을 미치며 이는 주로 산소개입에 의한 것임을 알 수 있었다. 특히 광투과율이 매우 낮다고 알려진 산소와의 친화력이 강한 금속, 즉, Al, Ti, Cr 그리고 Ni의 광투과율을 저 진공도나 느린 증착속도에 의한 증착공정으로 상당히 향상시킬 수 있었다.

• 전자공학회논문지D
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• 제34D권5호
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• pp.61-66
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• 1997

In this paper we report the fabrication of an InGaAs metal-semiconductor-metal (MSM) photodiode(PD) which an InAlAs barrier enhancement layer that has very low dark current and high speed chracteristics. The detector using Cr/Au schottky metal fingers with 4um spacing on a large active area of 300*300um$^{2}$ offers a low dark current of 38nA at 10V, a low capacitance of 0.8pF, and a high 3-dB bandwidth of 2.4 GHz. To our knowledge, these characteristics are better than any previously published results obtained from large area InGaAs MSM PD's. The RC equivalent model and frequency domain current response model considering transit time were also used to analyze the frequency characteristic of the fabricated device.

• Journal of Advanced Marine Engineering and Technology
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• 제30권8호
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• pp.901-906
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• 2006

In this paper, the power amplifier using active bias circuits for LDMOS(Lateral Diffused Metal Oxide Semiconductor) MRF-21180 is designed and fabricated. According to change the temperature, the gate voltage of LDMOS is controlled by the fabricated active bias circuits which is made of PNP transistor to suppress drain current. The driving amplifier using MRF-21125 and MRF-21060 is made to drive the LDMOS MRF-21180 power amplifier. The variation of current consumption in the fabricated 60 watt power amplifier has an excellent characteristics of less than 0.1 A, whereas a passive biasing circuit dissipates more than 0.5 A. The implemented power amplifier has the gain over 9 dB, the gain flatness of less than $\pm$0.1 dB and input and output return loss of less than -6 dB over the frequency range 2.11 $\sim$ 2.17 GHz. The DC operation point of this power amplifier at temperature variation 0 $^{\circ}C$ to 60 $^{\circ}C$ is fixed by active bias circuit.

• Current Optics and Photonics
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• 제1권4호
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• pp.358-363
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• 2017

In this study, we present a detailed investigation of luminescence properties of a blue light-emitting diode using InGaN/GaN (indium component is 17.43%) multiple quantum wells as the active region grown on patterned sapphire substrate by low-pressure metal-organic chemical vapor deposition (MOCVD). High-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman scattering (RS) and photoluminescence (PL) measurements are employed to study the crystal quality, the threading dislocation density, surface morphology, residual strain existing in the active region and optical properties. We conclude that the crystalline quality and surface morphology can be greatly improved, the red-shift of peak wavelength is eliminated and the superior blue light LED can be obtained because the residual strain that existed in the active region can be relaxed when the LED is grown on patterned sapphire substrate (PSS). We discuss the mechanisms of growing on PSS to enhance the superior luminescence properties of blue light LED from the viewpoint of residual strain in the active region.