• 제목/요약/키워드: Active matrix organic light-emitting diode (AMOLED)

검색결과 37건 처리시간 0.027초

2.2 inch QCIF+ Active-Matrix Organic Light-Emitting Diode Display With High Performance and Mass Productive Ability

  • Tsai, Cheng-Hung;Chiu, Chen-Lun;Chen, Cheng-Ming;Shih, I-Cheng;Tang, Shun-Jyun;Huang, Chun-Yao
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.799-802
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    • 2005
  • This paper described a 2.2" $QCIF^+$ ($176{\times}RGB{\times}220$) active matrix organic light-emitting diode display (AMOLED) using low-temperature poly-silicon (LTPS) technology. We have designed the OLED pixel to match the OLED material characteristic with COG specification and optimized pixel structure to improve color gamma adjustment and simplify signal complexity.

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능동형 유기 발광 다이오드(AMOLED)에서 발생하는 수소화된 비정질 실리콘 박막 트랜지스터(Hydrogenated Amorphous Silicon Thin Film Transistor)의 이력 (Hysteresis) 현상 (Hysteresis Phenomenon of Hydrogenated Amorphous Silicon Thin Film Transistors for an Active Matrix Organic Light Emitting Diode)

  • 최성환;이재훈;신광섭;박중현;신희선;한민구
    • 전기학회논문지
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    • 제56권1호
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    • pp.112-116
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    • 2007
  • We have investigated the hysteresis phenomenon of a hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and analyzed the effect of hysteresis phenomenon when a-Si:H TFT is a pixel element of active matrix organic light emitting diode (AMOLED). When a-Si:H TFT is addressed to different starting gate voltages, such as 10V and 5V, the measured transfer characteristics with 1uA at $V_{DS}$ = 10V shows that the gate voltage shift of 0.15V is occurred due to the different quantities of trapped charge. When the step gate-voltage in the transfer curve is decreased from 0.5V to 0.05V, the gate-voltage shift is decreased from 0.78V to 0.39V due to the change of charge do-trapping rate. The measured OLED current in the widely used 2-TFT pixel show that a gate-voltage of TFT in the previous frame can influence OLED current in the present frame by 35% due to the change of interface trap density induced by different starting gate voltages.

유기발광(有機發光) 다이오드의 가속(加速) 수명(壽命) 시험(試驗)에 관한 연구(硏究) (Life Estimation of Organic Light Emission Diode by Accelerated Test)

  • 최영태;조재립
    • 한국품질경영학회:학술대회논문집
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    • 한국품질경영학회 2010년도 춘계학술대회
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    • pp.262-268
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    • 2010
  • Organic light emitting diode is developed fast from 1963 after discovering electric light emitting phenomenon. First PMOLED(passive matrix OLED) product is manufactured and AMOLED(active matrix OLED) using TFT(thin film ransistor) is now in the center. PMOLED is mainly mounted at sub display. but AMOLED is mounted at main display. Also AMOLED expand the market to PMP(portable multimedia players), navigation and TV. Even thought OLED's market is opening to many applications, OLED is worried about lifetime until now. That's appeared in market in a very short time and is not known well about result of OLED's lifetime and reliability test. And there is no standard ssessment method and not enough study to standardization the method. A study's purpose is reduce the time for life test by accelerated current and it can do production possible design by accelerated life model in design phase. It's must be add to process variables and design variables(like ratio of light emitting, organic material structure, condition of aging, etc) to make the best use of supplied accelerated lifetime model in this paper. In terms of lifetime it needs each criterion of applications because of image sticking. In conclusion, it's possible to discover new defect because there is not much time to be opened in market and develop a method of manufacturing process & materials, so we need to study on the subject of this paper continuously.

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Development of a 14.1 inch Full Color AMOLED Display with Top Emission Structure

  • Jung, J.H.;Goh, J.C.;Choi, B.R.;Chai, C.C.;Kim, H.;Lee, S.P.;Sung, U.C.;Ko, C.S.;Kim, N.D.;Chung, K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.793-796
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    • 2005
  • A structure and a design of device were developed to fabricate large-scale active matrix organic light-emitting diode (AMOLED) display with good color purity and high aperture ratio. With these technologies, we developed a full color 14.1 inch WXGA AMOLED display. For the integration of OLED on an active matrix a-Si TFT backplane, an efficient top emission OLED is essential since the TFT circuitry covers a large position of the pixel aperture. These technologies will enable up the OLED applications to larger size displays such as desktop monitors and TVs.

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A Driving Method for Large-Size AMOLED Displays Using a-Si:H TFTs

  • Min, Ung-Gyu;In, Hai-Jung;Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.517-520
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    • 2008
  • A voltage-programming pixel circuit, which compensates the threshold voltage shift of TFTs and the degradation of OLED, is proposed for large sized a-Si:H active matrix organic light emitting diode (AMOLED) applications. Considering threshold voltage variation (or shift), OLED degradation and reverse bias annealing, HSPICE simulation results indicate that luminance error of every gray level is less than 0.4 LSB under the condition of +1V threshold voltage shift and from -0.2 LSB to 2.6 LSB within 30% degradation of OLED in the case of 40-inch full HDTV condition.

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Data Supply Voltage Reduction Scheme for Low-Power AMOLED Displays

  • Nam, Hyoungsik;Jeong, Hoon
    • ETRI Journal
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    • 제34권5호
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    • pp.727-733
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    • 2012
  • This paper demonstrates a new driving scheme that allows reducing the supply voltage of data drivers for low-power active matrix organic light-emitting diode (AMOLED) displays. The proposed technique drives down the data voltage range by 50%, which subsequently diminishes in the peak power consumption of data drivers at the full white pattern by 75%. Because the gate voltage of a driving thin film transistor covers the same range as a conventional driving scheme by means of a level-shifting scheme, the low-data supply scheme achieves the equivalent dynamic range of OLED currents. The average power consumption of data drivers is reduced by 60% over 24 test images, and power consumption is kept below 25%.

Development of 40 inch Full Color AMOLED Display

  • Chung, K.;Huh, J.M.;Sung, U.C.;Chai, C.C.;Lee, J.H.;Kim, H.;Lee, S.P.;Goh, J.C.;Park, S.K.;Ko, C.S.;Koh, B.S.;Shin, K.J.;Choi, J.H.;Jung, J.H.;Kim, N.D.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.781-784
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    • 2005
  • We have developed technology to fabricate large-size active matrix organic light-emitting diode (AMOLED) displays with good color purity. Using these innovations, we have developed a 40inch diagonal WXGA AMOLED full color display. Because the TFT circuitry occupies a large portion of the pixel structure, an efficient white emission OLED is essential to integrate the device onto the active matrix backplane. The development of these technologies enables OLED displays to fulfill the requirements for larger size applications such as HDTVs

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A New AMOLED Pixel Circuit Employing a-Si:H TFTs for High Aperture Ratio

  • Shin, Hee-Sun;Lee, Jae-Hoon;Jung, Sang-Hoon;Kim, Chang-Yeon;Han, Min-Koo
    • Journal of Information Display
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    • 제6권2호
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    • pp.12-15
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    • 2005
  • We propose a new pixel design for active matrix organic light emitting diode (AM-OLED) displays using hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). The pixel circuit is composed of five TFTs and one capacitor, and employs only one additional control signal line. It is verified by SPICE simulation results that the proposed pixel compensates the threshold voltage shift of the a-Si:H TFTs and OLED.

Oxide TFT as an Emerging Technology for Next Generation Display

  • Kim, Hye-Dong;Jeong, Jae-Kyeong;Mo, Yeon-Gon;Chung, Ho-Kyoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.119-122
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    • 2008
  • In this paper, we describe the current status and issues of the oxide thin-film transistors (OTFTs), which attract much attention as an emerging new backplane technology replacing conventional silicon-based TFTs technologies. First, the unique benefits of OTFTs will be presented as a backplane for large-sized AMOLED including note-book PC, second TV and HD-TV. And then, the state-of-the-art transistor performance and uniformity characteristics of OTFTs will be highlighted. The obtained a-IGZO TFTs exhibited the field-effect mobility of $18\;cm^2/Vs$, threshold voltage of 1.8 V, on/off ratio of $10^9$, and subthreshold gate swing of 0.28 V/decade. In addition, the world largest-sized 12.1-inch WXGA active-matrix organic light emitting diode (AMOLED) display is demonstrated using indium-gallium-zinc oxide (IGZO) TFTs.

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Thin Film Transistor (TFT) Pixel Design for AMOLED

  • Han, Min-Koo;Lee, Jae-Hoon;Nam, Woo-Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.413-418
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    • 2006
  • Highly stable thin-film transistor (TFT) pixel employing both low temperature polycrystalline silicon (LTPS) and amorphous silicon (a-Si) for active matrix organic light emitting diode (AMOLED) is discussed. ELA (excimer laser annealing) LTPS-TFT pixel should compensate $I_{OLED}$ variation caused by the non-uniformity of LTPS-TFT due to the fluctuation of excimer laser energy and amorphous silicon TFT pixel is desired to suppress the decrease of $I_{OLED}$ induced by the degradation of a-Si TFT. We discuss various compensation schemes of both LTPS and a-Si TFT employing the voltage and the current programming.

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