• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.12
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• pp.1825-1832
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• 2013

Since domestic terrestrial DTV transition introduces the need for a multi-channel service as raised again to multi-channel service is being promoted. Current terrestrial broadcasters to realize multi-channel services are provided jointly countermeasures. Multi-channel services also active in policy-making of Korea Communications Commission. Therefore, in this article, terrestrial technical issues that arise in multi-channel services and services for the implementation of policy measures were proposed. Therefore, in this article terrestrial technical issues that arise in multi-channel services and services for the implementation of policy measures by looking at the future terrestrial multi-channel service to pursue the direction and policies of regulatory agencies aims to help.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.127-130
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• 1998

Wireless multimedia networks require channel allocation strategies for various multimedia traffic since the mobility of users needs to be considered in addition to diversity of QoS requirements of multimedia traffic. In this paper, we propose an Efficient Channel Allocation strategy, based on prioritization of handoff calls used in Guard channel method. Gurad channels can be shared between non real time calls and real time handoff calls. To decrease the probability of handoff failure, when resources become scarce, the Call Admission Control can take some resources away from the active calls. It is shown through extensive simulations that the proposed strategy provides higher channel utilization and lower probability of handoff failure than existing strategies.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.13 no.4
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• pp.1904-1921
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• 2019

In this paper, we investigate the problem of secure communications in multiple-input-multiple-output interference networks from the perspective of physical layer security. Specifically, the legitimate transmitter-receiver pairs are divided into different categories of active and inactive. To enhance the security performances of active pairs, inactive pairs serve as cooperative jammers and broadcast artificial noises to interfere with the eavesdropper. Besides, active pairs improve their own security by using joint transceivers. The encoding of active pairs and inactive pairs are designed by maximizing the difference of mean-squared errors between active pairs and the eavesdropper. In detail, the transmit precoder matrices of active pairs and inactive pairs are solved according to game theory and linear programming respectively. Experimental results show that the proposed algorithm has fast convergence speed, and the security performances in different scenarios are effectively improved.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.145-148
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• 2007

The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.

• ETRI Journal
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• v.46 no.2
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• pp.323-332
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• 2024

Receiver and transmitter monolithic microwave integrated circuit (MMIC) multifunction chips (MFCs) for active phased-array antennas for Ka-band satellite communication (SATCOM) terminals have been designed and fabricated using a 0.15-㎛ GaAs pseudomorphic high-electron mobility transistor (pHEMT) process. The MFCs consist of four-channel radio frequency (RF) paths and a 4:1 combiner. Each channel provides several functions such as signal amplification, 6-bit phase shifting, and 5-bit attenuation with a 44-bit serial-to-parallel converter (SPC). RF pads are implemented on the bottom side of the chip to remove the parasitic inductance induced by wire bonding. The area of the fabricated chips is 5.2 mm × 4.2 mm. The receiver chip exhibits a gain of 18 dB and a noise figure of 2.0 dB over a frequency range from 17 GHz to 21 GHz with a low direct current (DC) power of 0.36 W. The transmitter chip provides a gain of 20 dB and a 1-dB gain compression point (P1dB) of 18.4 dBm over a frequency range from 28 GHz to 31 GHz with a low DC power of 0.85 W. The P1dB can be increased to 20.6 dBm at a higher bias of +4.5 V.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.594-600
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• 2014

A threshold voltage compensation pixel circuit was developed for active-matrix organic light emitting diodes (AMOLEDs) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs). Oxide TFTs are n-channel TFTs; therefore, we developed a circuit for the n-channel TFT characteristics. The proposed pixel circuit was verified and proved by circuit analysis and circuit simulations. The proposed circuit was able to compensate for the threshold voltage variations of the drive TFT in AMOLEDs. The error rate of the OLED current for a threshold voltage change of 3 V was as low as 1.5%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.303-304
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• 2009

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine. ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.26-29
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• 2006

Transparent ZnO thin films were prepared by KrF pulsed laser deposition (PLD) technique and applied to a bottom-gate type thin film transistor device as an active channel layer. A high conductive crystalline Si substrate was used as an metal-like bottom gate and SiN insulating layer was then deposited by LPCVD(low pressure chemical vapour deposition). An aluminum layer was then vacuum evaporated and patterned to form a source/drain metal contact. Oxygen partial pressure and substrate temperature were varied during the ZnO PLD deposition process and their influence on the thin film properties were investigated by X-ray diffraction(XRD) and Hall-van der Pauw method. Optical transparency of the ZnO thin film was analyzed by UV-visible phometer. The resulting ZnO-TFT devices showed an on-off ration of $10^6$ and field effect mobility of 2.4-6.1 $cm^2/V{\cdot}s$.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.22.1-22
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• 2001

In this paper we present Multiple-Channel Active Noise Control[ANC] system by employing Independent Component Analysis[ICA] and Adaptive Network Fuzzy Inference System[ANFIS]. ICA is widely used in signal processing and communication and it use prewhiting and appropriate choice of non-linearities, ICA can separate mixed signal. ANFIS controller is trained with the hybrid learning algorithm to optimize its parameters for adaptively canceling noise. This new method which minimizes a statistical dependency of mutual information(MI) in mixed low frequency noise signal and there is no need to secondary path modeling. The proposed implementations achieve more powerful and stable noise reduction than Filtered-X LMS algorithms which is needed for LTI assumption and precise secondary error

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.33-38
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• 2017

In this paper, a 4-channel common-cathode VCSEL diode driver array with 3.125 Gb/s per channel operation speed is realized. In order to achieve faster speed of the switching main driver with relatively large transistors, the transmitter array chip consists of a pre-amplifier with active inductor stage and also an input buffer with modified equalizer, which leads to bandwidth extension and reduced current consumption. The utilized VCSEL diode provides inherently 2.2 V forward bias voltage, $50{\Omega}$ resistance, and 850 fF capacitance. In addition, the main driver based upon current steering technique is designed, so that two individual current sources can provide bias currents of 3.0 mA and modulation currents of 3.3 mA to VCSEL diodes. The proposed 4-channel VCSEL driver array has been implemented by using a $0.11-{\mu}m$ CMOS technology, and the chip core occupies the area of $0.15{\times}0.18{\mu}m^2$ and dissipates 22.3 mW per channel.