• Title/Summary/Keyword: Active RF

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Design of a Data Transmitter Modem using the DS/SS for the Active RF-ID system (능동형 RF-lD 시스템에 적용 가능한 DS/SS방식의 데이터 전송용 모뎀설계)

  • Park, Young-Hun;Kim, Jin-Kyung;Baek, Seung-Jae;Kwak, Jin-Kyu;Park, Jin-Soo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.1
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    • pp.539-542
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    • 2005
  • In this paper, we propose a wireless data access system, which used direct sequence spread spectrum method and the ISM band with 900MHz radio frequency. By applying bi-directional transmission between wireless transmitter and receiver, it can be effectively connected with any kinds of RF-ID with 900MHz ISM band. Therefore it could economically be used as peripheral equipments for RF-ID system.

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Silicon Micromachined RF Components: Review

  • Yook, Jong-Gwan
    • Proceedings of the IEEK Conference
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    • 1999.06a
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    • pp.199-202
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    • 1999
  • In this paper, a possibility of building various types of RF passive components using the silicon micromachining technique has been examined with special emphasis on the wireless and mobile communication applications. Silicon micromachining technique is compatible with conventional silicon IC process and could provide a possibility of integrating base-band signal processing units and RF passive and active circuit components all in one silicon wafer rendering implementation of system-on-chip paradigm for future mobile and wireless communication systems.

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비정질 산화물 반도체 IGZO 박막의 특성 연구

  • Jang, Yajuin;Kim, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.287-287
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    • 2012
  • 최근 투명 산화물 반도체(TOS: Transparent Oxide Semiconductor)중에 비정질 산화물 반도체(amorphous oxide semiconductor)를 이용한 트랜지스터 연구가 활발히 진행되고 있다. 비정질 산화물 반도체는 박막 트렌지스터 소자의 Active Layer으로 사용할 수 있다. 본 연구는 RF magnetron sputtering법으로 유리기판 위에 IGZO박막을 증착하였다. 박막 증착 조건은 초기 압력 $3.0{\times}10^{-6}$ Torr, 증착 압력 20 mTorr, 반응가스 Ar 50 sccm, RF power 30w, 증착 온도는 실온으로 고정하였으며, 공정변수로 증착 시간을 변화시키며 IGZO박막을 증착하였다. IGZO 타겟은 $In_2O_3$, $Ga_2O_3$, ZnO 분말을 각각 1:1:1 mol% 조성비로 혼합하여 소결한 타겟을 사용하였다. XRD 분석결과에 따라서 Bragg's 법칙을 만족하는 피크가 나타나지 않는 비정질 구조임을 확인할 수 있었다. 가시광 영역에서(450~700 nm) 모든 박막은 90% 이상 투과도를 나타내었다. 증착시간이 증가할수록 밴드갭이 감소하는 것을 확인하였다. 증착시간이 5분인 경우 캐리어 농도는 $2.2{\times}10^{19}$ $cm^{-3}$, 이동도는 7.5 $cm^2/V-s$, 비저항은 $3.8{\times}10^{-2}{\Omega}$-cm의 반도체 특성을 나타냈고, 박막 트렌지스터 소자의 Active Layer으로 사용할 수 있다.

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A Study of Passive Intermodulation Distortion on RF Connectors (RF 커넥터의 Passive IMD에 관한 연구)

  • 조인귀;이재화;안승호;최상국;정명영;최태구
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.2
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    • pp.268-277
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    • 2000
  • Nowadays, the interference between neighbor basestations is getting higher as mobile communication services expand, then the increase of the interference causes IMD(Intermolulation Distortion) problems for not only active devices but also passive devices. In this paper, we have designed and assembled several adapters having variable plating thickness and materials to analyze PIMD(Passive Intermodulation Distortion) mechanisms for coaxial cables which is one of the representative passive RF devices. The measurement results of the assembled adapters show that IM level depends on conductivity of plating materials, plating thickness, device structure, aging effect and so on. Furthermore, we have obtained PIMD mechanisms and some control methods of PIMD from the results.

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Design of a 2-Port Frequency Mixer for the Retrodirective Active Array Antenna (역지향성 능동배열 안테나용 2-Port 주파수 혼합기의 설계)

  • 전중창;김태수;김현덕
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2004.05b
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    • pp.59-63
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    • 2004
  • In this paper, we have developed a 2-port resistive frequency mixer for the retrodirective active array. The circuit topology is consisted of 2-port to avoid the complexity of LO and RF signal combination, using a pseudomorphic HEMT device. The operating frequencies are 4.0 GHz, 2.01 GHz, and 1.99 GHz for LO, RF, and IF, respectively. Conversion loss is measured to be -1㏈ and 1-㏈ compression point -15 ㏈m at the LO power of -10 ㏈m.

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Evaluation of Effective Jamming/Deception Area of Active Decoy against Ground Tracking Radars on Dynamic Combat Scenarios (동적 교전 시나리오에서 지상 추적 레이다에 대한 이탈방사체의 효과적 재밍/기만 영역 분석)

  • Rim, Jae-Won;Lee, Sangyeob;Koh, Il-Suek;Baek, Chung;Lee, Seungsoo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.4
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    • pp.269-278
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    • 2017
  • We analyze the jamming/deception performance of an active decoy against ground tracking radars on dynamic combat scenarios. Based on the movement and the interference flow of an airborne platform, the trajectories of the active decoy is accurately calculated by solving 6-degree of freedom equations of motion. On realistic combat scenarios, numerical simulations are examined to analyze the jamming performance of the decoy for various movements of the platform and RF specifications of the active decoy. Effective jamming/deception area against the ground tracking radars is estimated from the simulation.

Analysis of the RF Link Design for ETCS and Study on the Communication Zone by the Antenna Beam Pattern (ETCS용 RF 링크 설계와 안테나 빔 패턴에 의한 통신 영역 연구)

  • Yim Choon-Sik;Ha Jae-Kwon;Ahn Dong-Hyun
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.3 no.1 s.4
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    • pp.21-30
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    • 2004
  • This paper describes the design of RF link between RSE and OBU of ETCS and the analysis of the antenna beam pattern to get a proper communication area in the cross direction and traveling direction of lanes. This stage should be performed prior to determination of system requirements of ITS service based on active DSRC. This study is important and fundamental technical analysis to design and implement base station of ETCS.

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Optimized RF Education System Using Real Module (실질 모듈을 이용한 최적화 RF 교육 시스템)

  • Ryu, Su-Ha;Shin, Jae-Ho;Yi, Sang-Hoi;Lee, Won-Seok
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.149-150
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    • 2008
  • In this paper, we propose a new RF education system using real module that engineer apply at actual companies and laboratories. The proposed system provides beginner and college students with a real effect of RF hardware education. The Optimized RF education system we present is made up of a real passive module, active module, mobile communication module, DSP based system.

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Graphene field-effect transistor for radio-frequency applications : review

  • Moon, Jeong-Sun
    • Carbon letters
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    • v.13 no.1
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    • pp.17-22
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    • 2012
  • Currently, graphene is a topic of very active research in fields from science to potential applications. For various radio-frequency (RF) circuit applications including low-noise amplifiers, the unique ambipolar nature of graphene field-effect transistors can be utilized for high-performance frequency multipliers, mixers and high-speed radiometers. Potential integration of graphene on Silicon substrates with complementary metal-oxide-semiconductor compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene metal-oxide-semiconductor field-effect transistors to minimize parasitics and improve gate modulation efficiency in the channel. In this paper, we highlight recent progress in graphene materials, devices, and circuits for RF applications. For passive RF applications, we show its transparent electromagnetic shielding in Ku-band and transparent antenna, where its success depends on quality of materials. We also attempt to discuss future applications and challenges of graphene.

Dynamic Range Improvement of Digital Receiver (디지털 수신기의 Dynamic Range 개선방안)

  • Hwang, Hee-Geun;Rhee, Young-Chul
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.5 no.2
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    • pp.61-67
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    • 2012
  • In this paper, In this paper, we consider a dynamic range in the frequency converter to obtain a high conversion gain and linearity while operating area proposed to broaden the design. Super-heterodyne RF Front-End style was applied to the active mixer stage, GaAs devices were used. Circuit design easy and simple forms benefit circuit is constructed in the drain mixer, passive mixer with the operating area were compared and analyzed. The simulation results of the conversion gain of 2.4dB and 0.2dBm about a gain-compression point, and showed the dynamic range of 71.9dB, when compared with passive mixers, dynamic range of approximately 6dB improvement was identified. Measurements of an approximately 2dB conversion gain and-1.0dBm of the gain-compression point, and confirmed that the active area of 71.1dB. When compared with passive mixers, dynamic range of is reduced by approximately 8dB has been improved.