A Study of Passive Intermodulation Distortion on RF Connectors

RF 커넥터의 Passive IMD에 관한 연구

  • 조인귀 (한국전자통신연구원 부품기술개발부) ;
  • 이재화 (한국전자통신연구원 부품기술개발부) ;
  • 안승호 (한국전자통신연구원 부품기술개발부) ;
  • 최상국 (한국전자통신연구원 부품기술개발부) ;
  • 정명영 (한국전자통신연구원 부품기술개발부) ;
  • 최태구 (한국전자통신연구원 부품기술개발부)
  • Published : 2000.02.01

Abstract

Nowadays, the interference between neighbor basestations is getting higher as mobile communication services expand, then the increase of the interference causes IMD(Intermolulation Distortion) problems for not only active devices but also passive devices. In this paper, we have designed and assembled several adapters having variable plating thickness and materials to analyze PIMD(Passive Intermodulation Distortion) mechanisms for coaxial cables which is one of the representative passive RF devices. The measurement results of the assembled adapters show that IM level depends on conductivity of plating materials, plating thickness, device structure, aging effect and so on. Furthermore, we have obtained PIMD mechanisms and some control methods of PIMD from the results.

이동통선 서비스가 확장됨에 따라 인접 기지국간의 간섭이 증가하고 그에 따른 IMD(Intermodulation Distortion) 문제도 증가하여 Active IMD뿐만 아니라 Passive IMD(Passive Intermodulation Distortion)에 대한 문 제도 함께 부상하고 었다. 따라서 본 고에서는 대표적인 RF 소자 중 동축선에서의 PIMD의 발생기구의 분석을 위하여 다양한 도금 두께와 도금 재질을 갖는 어랩터를 설계 및 제작하였다. 제작된 어댐터 측정결과 1M 발생 수준이 도금 재질의 전도율, 소자의 구조, 도금 재질의 두께. Aging현상 등에 의존함을 확인하였으며, 도금 두께의 변화와 재질의 변화를 통해 PIMD 발생기구를 분석하였고, PIMD의 제어기술 방안을 검토하였다.

Keywords

References

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