• Title/Summary/Keyword: Acid Copper Plating Additives

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Development of the Latest High-performance Acid Copper Plating Additives for Via-Filling & PTH

  • Nishiki, Shingo
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.4
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    • pp.39-43
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    • 2012
  • Via-filling plating and through-hole plating are absolutely imperative for manufacturing of printed-wiring board. This Paper is introducing the latest developments of our company worked on the high-performance of acid copper plating additives for them.

Effect of Compositional Ratio of Additives on the Plating Properties in Environment-Friendly Electroless Plating Reaction (친환경 무전해 도금반응에서 첨가제의 조성비가 도금특성에 미치는 영향)

  • Chun, Kyung-Soo;Paik, Gwi-Chan
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.9
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    • pp.4015-4021
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    • 2011
  • The purpose of this study is to investigate the effect of compositional ratio of additives, such as potassium ferrocyanide, aminoacetic acid (=glycine) and 2,2'-dipyridyl, on the physical properties of copper layer deposited by environment-friendly electroless plating reaction. The highest plating rate of copper layer, $9.5mg{\cdot}cm^{-2}{\cdot}hr^{-1}$, was obtained at 20 mg/L of potassium ferrocyanide and 0.01 mol/L of aminoacetic acid, which coincided with the change in the hardness of the copper layer. In the additives used in this study, potassium ferrocyanide was considered to improve the plating rate, aminoacetic acid increased the hardness value of deposited films and 2,2'-dipyridyl enhanced the brightness of copper deposited films.

Formation of Copper Seed Layers and Copper Via Filling with Various Additives (Copper Seed Layer 형성 및 도금 첨가제에 따른 Copper Via Filling)

  • Lee, Hyun-Ju;Ji, Chang-Wook;Woo, Sung-Min;Choi, Man-Ho;Hwang, Yoon-Hwae;Lee, Jae-Ho;Kim, Yang-Do
    • Korean Journal of Materials Research
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    • v.22 no.7
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    • pp.335-341
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    • 2012
  • Recently, the demand for the miniaturization of printed circuit boards has been increasing, as electronic devices have been sharply downsized. Conventional multi-layered PCBs are limited in terms their use with higher packaging densities. Therefore, a build-up process has been adopted as a new multi-layered PCB manufacturing process. In this process, via-holes are used to connect each conductive layer. After the connection of the interlayers created by electro copper plating, the via-holes are filled with a conductive paste. In this study, a desmear treatment, electroless plating and electroplating were carried out to investigate the optimum processing conditions for Cu via filling on a PCB. The desmear treatment involved swelling, etching, reduction, and an acid dip. A seed layer was formed on the via surface by electroless Cu plating. For Cu via filling, the electroplating of Cu from an acid sulfate bath containing typical additives such as PEG(polyethylene glycol), chloride ions, bis-(3-sodiumsulfopropyl disulfide) (SPS), and Janus Green B(JGB) was carried out. The desmear treatment clearly removes laser drilling residue and improves the surface roughness, which is necessary to ensure good adhesion of the Cu. A homogeneous and thick Cu seed layer was deposited on the samples after the desmear treatment. The 2,2'-Dipyridyl additive significantly improves the seed layer quality. SPS, PEG, and JGB additives are necessary to ensure defect-free bottom-up super filling.

Effects of Chloride Ion on Accelerator and Inhibitor during the Electrolytic Cu Via-Filling Plating (전해 Cu Via-Filling 도금에서 염소이온이 가속제와 억제제에 미치는 영향)

  • Yu, Hyun-Chul;Cho, Jin-Ki
    • Journal of the Korean institute of surface engineering
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    • v.46 no.4
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    • pp.158-161
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    • 2013
  • Recently, the weight reduction and miniaturization of the electronics have placed great emphasis. The miniaturization of PCB (Printed Circuit Board) as main component among the electronic components has also become progressed. The use of acid copper plating process for Via-Filling effectively forms interlayer connection in build-up PCBs with high-density interconnections. However, in the case of copper-via filled in a bath, which is greatly dependent on the effects of additives. This paper discusses effects of Cl ion on the filling of PCB vias with electrodeposited copper based on both electrochemical experiment and practical observation of cross sections of vias.

Copper Via Filling Using Organic Additives and Wave Current Electroplating (유기물 첨가제와 펄스-역펄스 전착법을 이용한 구리 Via Filling에 관한 연구)

  • Lee, Suk-Ei;Lee, Jae-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.3
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    • pp.37-42
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    • 2007
  • Copper deposition studies have been actively studied since interests on 3D SiP were increased. The defects inside via can be easily formed due to the current density differences on entrance, bottom and wall of via. So far many different additives and current types were discussed and optimized to obtain void-free copper via filling. In this research acid cupric sulfate plating bath containing additives such as PEG, SPS, JGB, PEI and wave current applied electroplating were examined. The size and shape of grain were influenced by the types of organic additives. The cross section of specimen were analyzed by FESEM. When PEI was added, the denser copper deposits were obtained. Electroplaing time was reduced when 2 step via filling was employed.

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Investigation of Ni/Cu Contact for Crystalline Silicon Solar Cells (결정질 실리콘 태양전지에 적용하기 위한 도금법으로 형성환 Ni/Cu 전극에 관한 연구)

  • Kim, Bum-Ho;Choi, Jun-Young;Lee, Eun-Joo;Lee, Soo-Hong
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.06a
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    • pp.250-253
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    • 2007
  • An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. The Ni contact was formed on the front grid pattern by electroless plating followed by anneal ing at $380{\sim}400^{\circ}C$ for $15{\sim}30$ min at $N_{2}$ gas to allow formation of a nickel-silicide in a tube furnace or a rapid thermal processing(RTP) chamber because nickel is transformed to NiSi at $380{\sim}400^{\circ}C$. The Ni plating solution is composed of a mixture of $NiCl_{2}$ as a main nickel source. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. The Ni/Cu contact was found to be well suited for high-efficiency solar cells and was successfully formed by using electroless plating and electroplating, which are more cost effective than vacuum evaporation. In this paper, we investigated low-cost Ni/Cu contact formation by electroless and electroplating for crystalline silicon solar cells.

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Investigation of Plated Contact for Crystalline Silicon Solar Cells (결정질 실리콘 태양전지에 적용될 도금전극 특성 연구)

  • Kim, Bum-Ho;Choi, Jun-Young;Lee, Eun-Joo;Lee, Soo-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.192-193
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    • 2007
  • An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electro less plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. In this paper, we investigated low-cost Ni/Cu contact formation by electro less and electroplating for crystalline silicon solar cells.

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The Electrochemical Characteristics of Mercapto Compounds on the Copper Electroplating (전기구리도금에 미치는 Mercapto화합물의 전기화학적 특성)

  • Son Sang Ki;Lee Yoo Yong;Cho Byung Won;Lee Jae Bong;Lee Tae Hee
    • Journal of the Korean Electrochemical Society
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    • v.4 no.4
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    • pp.160-165
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    • 2001
  • The eletrochemical charateristics of mercapto compound additives on the copper electroplating for semi conductor metalization were investigated. Mercapto compounds including sulfur atom is known that they activate deposition rate in eletroplating. Four different types of mercapto compounds were chosen with different concentration and both the characteristics of plating and throwing power were investigated by electrochemical experiments such as Hull cell test, Haring-Blum cell, cathodic polarization, EQCM(Electrochemical Quartz Crystal Microbalance). 3-Mercapto-1-propanesulfonic acid among 4 different mercapto compounds was regarded as the most proper activator with the results of the mass change of Cu metal deposited on eletrode by cathodic polarization and EQCM. The overpotential was more shifted to 100 mV in the concentration of 20 ppm than the solution with only $Cl^-$ in cathodic scan.