• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.276-276
• /
• 2012

The interface morphology of organic active layers is known to play a crucial role in the performance of organic photovoltaic (OPV) cells. Especially, a controlled nanostructure with a large contact area between electron donor (D) and acceptor (A) layers is necessary to improve the power conversion efficiency (PCE) of the cells since the short exciton diffusion lengths in organic semiconductors limit the charge (hole and electron) separation before excitons recombination. In this work, we developed simple solvent treating methods to fabricate a nanostructured DA interface and applied them to enhance the PCE of ZnPc/C60 based small molecule OPV cells. Interestingly, it was observed that the solvent treatment on the donor layer prior to the deposition of the acceptor layer resulted in a significant decrease in PCE, which was due to an existence of undesirable voids at the DA interface. Instead, the solvent vapor treatment after the DA bilayer formation led to densely packed and well dispersed DA contacts. Consequently, 3-fold enhancement of PCE as compared to the untreated bilayer cell was accomplished.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.336-336
• /
• 2011

Over the past decades, organic semiconductors have been investigated intensely for their potential in a wide range of optoelectronic device applications since the organic materials have advantages for very light, flexible and low cost device fabrications. In this study, we fabricated small-molecule organic solar cells (OSCs) based on chloro[subphthalocyaninato]boron(III) (SubPc) as an electron donor and $C_{60}$ as an electron acceptor material. Recently SubPc, a cone-shaped molecule with $14{\pi}$-electrons in its aromatic system, has attracted growing attention in small-molecule OSC applications as an electron-donating material for its greater open-circuit voltage (VOC), extinction coefficient and dielectric constant compared to conventional planar metal phthalocyanines. In spite of the power conversion efficiency (PCE) enhancement of small-molecule OSC using SubPc and $C_{60}$, however, the study on the interface between donor-acceptor heterojunction of this system is limited. In this work, SubPc thin films at various thicknesses were deposited by organic molecular beam deposition (OMBD) and the evolution of surface morphology was observed using atomic force microscopy (AFM) and field emission scanning electron microscopy (FE-SEM). We also investigated the influence of film thickness and surface morphology on the PCE of small-molecule OSC devices.

• Analytical Science and Technology
• /
• v.8 no.4
• /
• pp.481-486
• /
• 1995

Quenching experiments by photoinduced electron transfer between a charged donor and a neutral acceptor were carried out in acetonitrile, dichloromethane and mixed solvents of acetonitrile and dichloromethane. Tris(2, 2'-bipyridine) ruthenium(II) ($[Ru(bpy)_3]^{2+}$) which has 2+ charge and dicyanobis (2, 2'-bipyridine) ruthenium(II) ($Ru(bpy)_2(CN)_2$) which has no charge were used as electron donors, and a series of tris(${\beta}$-diketonato) ruthenium (III) was used as acceptor. In dichloromethane, $[Ru(bpy)_3]^{2+}$ and its counter ions ($ClO{_4}^-$) form ion pair. In the estimate of ${\Delta}G$ of electron transfer, the electrostatic potential between counter ions and product ion pair produced by electron transfer must be taken into account. A similar effect of counter ions was found in mixed solvents of 10, 30, 50, 70 and 90% acetonitrile ratio in volume. The effect of counter ion on ${\Delta}G$ became smaller with the increase in acetonitrile ratio. The result in mixed solvents suggests that $[Ru(bpy)_3]^{2+}$ and its counter ions form ion pair even in 90% acetonitrile solution.

• Proceedings of the Korean Radioactive Waste Society Conference
• /
• 2003.11a
• /
• pp.256-260
• /
• 2003

The paper is aiming at presenting the proper treatment method and procedures of ILW waste to both waste generators and acceptor so that the waste characteristics are satisfied with the WAC(Waste Acceptance Criteria) and as a result, the disposal facility would be operating safely. The ILW generators are responsible for reducing the volume of waste, treating and packaging the waste in order to meet the WAC, and acceptor has an obligation of inspecting the waste in conformity with the acceptance procedure established by regulation. Recently, a number of countries including France and USA examine the disposal acceptability of ILW waste by the WCP(Waste Package Quality Certification Program).

• Transactions on Electrical and Electronic Materials
• /
• v.6 no.3
• /
• pp.124-127
• /
• 2005

It has been a long time since organic solar cells were expected as a low-cost energy-conversion device. Although practical use of them has not been achieved, technological progress continues. Morphology of the materials, organic/inorganic interface, metal cathodes, molecular packing and structural properties of the donor and acceptor layers are essential for photovoltaic response. We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerene$(C_60)$ as electron acceptor(A) with doped charge transport layers, and BCP and $Alq_3$ as an exciton blocking layer(EBL). We have measured the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source. We were use of $Alq_3$ layer leads to external power conversion efficiency was $2.65\%$ at illumination intensity $100\;mW/cm^2$. Also we confirmed the optimum thickness ratio of the DA hetero-junction is about 1:2.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.11
• /
• pp.969-974
• /
• 2003

HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• YAKHAK HOEJI
• /
• v.33 no.3
• /
• pp.141-148
• /
• 1989

The weak UV absorbing antihistaminics such as chlorpheniramine, triprolidine, tripelennamine and diphenhydramine were analyzed by charge-transfer spectrophotometric method. The results obtained are summarized as folows. It was possible to determine a weak UV absorbing antihistaminics using the intense charge-transfer UV bands in chloroform. Charge transfer complexes were formed in a 1:1 ratio between antihistaminics and iodine in chloroform. Linear relationship was found between absorbance and concentration in the range of $1.0\;{\times}\;10^{-5}M-5.0\;{\times}\;10^{-5}M$ for chlorpheniramine( ${\varepsilon}\;=\;2.082\;{\times}\;10^4$) and tripelennamine ( ${\varepsilon}\;=\;1.578\;{\times}\;10^4$), $1.0\;{\times}\;10^{-5}M-8.0\;{\times}\;10^{-5}M$ for triprolidine ( ${\varepsilon}\;=\;1.120\;{\times}\;10^4$) and $1.0\;{\times}\;10^{-5}M-1.0\;{\times}\;10^{-4}M$ for diphenhydramine ( ${\varepsilon}\;=\;9.900\;{\times}\;10^3$). Charge transfer complexes of chlorpheniramine, triprolidine and tripelennamine have absorption maxima at 293 nm and complex form of diphenhydramine has absorption maximum at 270 nm. By UV, IR spectra, it could be inferred that CT-complexes were formed by interaction between the basic nitrogen of antihistaminics as electron donor (non bonding electron) and iodine as electron acceptor (${\sigma}$ bonding electron).

• Bulletin of the Korean Chemical Society
• /
• v.28 no.8
• /
• pp.1389-1395
• /
• 2007

Two series of new organic fluorophores such as asymmetrical 3-(benzimidazol-2-yl)-10-hexylphenothiazine derivatives 1 and symmetrical 3,7-bis(benzimidazol-2-yl)-10-hexylphenothiazine derivatives 2 have been synthesized. Electronic absorption, fluorescence, and electrochemistry measurements reveal that the electron withdrawing benzimidazole subunit directly connected to the phenothiazine core facilitates the charge transfer characters which were also verified by the theoretical calculations. Various substituents on the benzimidazole moieties can allow a fine-tuning of the LUMO energy levels of the molecules without significantly affecting the HOMO energy levels. The method provides a new route for designing ambipolar molecules whose energy levels are well-matched with the Fermi levels of the electrodes to facilitate the electron or hole injection/transfer in OLED devices.

• Korean Journal of Crystallography
• /
• v.11 no.3
• /
• pp.137-146
• /
• 2000

The stoichiometric mix of evaporating materials for he CuInS₂ single crystal thin films was prepared. To obtain the single crystal thin films, CuINS₂ mixed crystal was deposited on etched semi-insulator GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperature were 640℃ and 430℃, respectively and the thickness of the single crystal thin films was 2 ㎛. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility deduced from Hall data are 9.64x10/sup 22//㎥ and 2.95x10/sup -2/ ㎡/V·s, respectively at 293 K. he optical energy gap was found to be 1.53 eV at room temperature. From the photocurrent spectrum obtained by illuminating perpendicular light on the c-axis of the thin film, we have found that the values of spin orbit coupling splitting ΔSo and the crystal field splitting ΔCr were 0.0211 eV and 0.0045 eV at 10K, respectively. From PL peaks measured at 10K, were can assign the 807.7 nm (1.5350 eV) peak to E/sub x/ peak of the free exciton emission, the 810.3 nm(1.5301 eV) peak to I₂ peak of donar-bound exciton emission and the 815.6 nm(1.5201 eV) peak to I₁ peak of acceptor-bound excition emission. In addition, the peak observed at 862.0 nm(1.4383 eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.985-986
• /
• 2006

The epitaxial $KTa_{0.524}Nb_{0.446}Ti_{0.03}O_3$ films with 3% Ti were investigated. Titanium (+4) substitution on the Nb/Ta site should reduce dielectric losses of KTN: Ti film by introducing an acceptor state. This acceptor state traps electrons due to oxygen vacancies that form during oxide film growth. KTN:Ti films were grown using pulsed laser deposition, and then annealed at different temperatures in oxygen ambient. The crystallinity, and surface morphology of KTN:Ti film were investigated using x-ray diffraction, and atomic force microscopy. The dielectric properties of Ti doped KTN films measured for unannealed and annealed films will be reported. Tunability and dielectric loss of as-deposited KTN:Ti film were determined to be 10% and 0.0134, respectively. For films annealed at $800^{\circ}C$ and $900^{\circ}C$, the dielectric loss decreased but with a decrease in tunability as well.