• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1649-1651
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• 2000

Optical properties of $Cd_{1-x}Zn_{x}S$ films deposited by :chemical bath deposition(CBD), which is a very attractive method for low-cost and large-area solar cells, are presented, Especially, in order to control more effectively the zinc component of the films, zinc acetate, which used as the zinc source, mixed in reaction solution after preheating and the pH of the reaction solution decreased with increasing the concentration of zinc acetate. The films prepared after preheating and pH control had larger zinc component and higher optical band gap. As the more zinc substituted for Cd in the films, the optical transmittance improved, while the absorption edge shifts to a shorter wavelength and the optical band gap increased. The photo conductivity of the films was larger than the dark conductivity, while the ratio of those increased with increasing the mole ratio of zinc acetate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.56-63
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• 2013

IGZO thin films have been prepared by RF magnetron sputtering. The structural, electrical and optical properties of the IGZO thin films have been investigated as a function of deposition condition. XRD analysis of IGZO thin films showed a typical crystallographic orientation with c-axis perpendicular regardless of deposition conditions. The carrier mobility, carrier concentration and resistivity of the IGZO films sputtered at 200 W, 1mTorr and $300^{\circ}C$ were $28.5cm^2/V{\cdot}sec$, $2.6{\times}10^{20}cm^3$, $8.8{\times}10^{-4}{\Omega}{\cdot}cm$ respectively. The optical transmittance were higher than 80% at visible region regardless of the deposition conditions under the experiments above, and specifically higher than 90% at wave length over 500 nm. The absorption edge was shifted to shorter wavelength with increase of carrier concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.818-824
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• 2008

The Separated Pulsed Laser Deposition (SPLD) technique uses two chambers that are separated by a conic metallic wall with a central orifice. The pressures of ablation chamber and deposition chamber were controlled by the differential vacuum system. We deposited zinc oxide (ZnO) thin films by SPLD method to obtain high quality thin films. When the bias voltage of +500 V was applied between a substrate and an orifice, the ZnO thin film was deposited efficiently. The deposited ZnO thin film at ablation chamber gas pressure of Ar 5 mTorr showed the sharpest ultraviolet absorption edge indicatory the band gap of about 3.1 eV. ZnO thin films were deposited using effect of electric and magnetic fields in the SPLD method. E${\times}$B drift happened by an electric fields and a magnetic fields, activated plasma plume, as a result the film surface became very smooth. When the bias voltage of +500 V and magnet of 0,1 T were applied the ZnO thin films surface state showed high quality. Grain size was 41.99 nm and RMS was 0.84 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.398-399
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• 2006

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light. in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ films to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of Ar:$O_2$=10:90~99.33:0.66 ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.202.2-202.2
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• 2013

Ti2O3 is known as a typical Mott insulator with a transition temperature of near $200^{\circ}C$. Unlike VO2, Ti2O3 does not have a structural phase transition near the metal-insulator-transition (MIT) temperature. We investigated the temperature-dependent thermal vibration change using temperature-dependent x-ray absorption fine structure (XAFS) at Ti K-edge in the temperature range of 300~600 K. Ti2O3 powder and films were synthesized using thermal chemical vapor deposition (CVD) at $800{\sim}900^{\circ}C$. X-ray diffraction measurements show a single phased Ti2O3 at room temperature. XAFS confirmed no structural phase transition in the temperature of 300~600 K. A small but distinguishable structural disorder change was observed near the transition temperature. We will discuss the MIT behavior with the change of structural disorder.

• Bulletin of the Korean Chemical Society
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• v.21 no.3
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• pp.317-320
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• 2000

Layered $K_2NiF_4$type ($C_nH_{2n+1}NH_3)_2PbCl_4$(n=6, 8 and 10) system, or alkylammonium tetrachloroplumbate compound, has been synthesized from $PbCl_2$ and $C_nH_{2n+1}NH_3Cl$ solutions under argon ambient pressure for 12hrs at $90^{\circ}C$. The crystal structure of the compound has been analyzed using X-ray powder diffaction in the range of $5^{\circ}{\leq}2{\theta}{\leq}55^{\circ}$, and all samples assigned to an orthorhombic system. Local distances of the Pb-Cl bond have been determined by Pb $L_{III}$-edge extended X-ray absorption fine structure (EXAFS) spectroscopy. The vibration modes of alkylammonium chains and the absorpton peaks of an excition have been examined by FT-IR and UV-Vis. reflectance spectra, respectively. The phase transition temperatures of the compounds have been studied by using DSC. According to the thermal analysis, two phase transition temperatures have been observed in the compositons of n=8 and 10.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.3
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• pp.122-126
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• 2003

In this study, $Zn_{0.86}Mn_{0.14}$Te epilayer of 0.7 $\mu\textrm{m}$-thickness was grown on GaAs(100) substrate by using hot wallepitaxy. GaAs(100) substrate was removed from $Zn_{0.86}Mn_{0.14}$Teepilayer by the selective etching solution. The crystal structure and the lattice constant of only Z $n_{0.86}$ M $n_{0.14}$Te epilayer were investigated to be zincblende and 6.140 $\AA$ from X-ray diffraction pattern, respectively. Mn composition x of $Zn_{1-x}Mn_x$Te epilayer was found to be 0.14 using this lattice constant and Vegard's law. The crystal quality of the epilayer was confirmed to be very good due to 256 arcsec-full-width at half-maximum of the double crystal rocking curve. The absorption spectra from the transmission ones were obtained to measure the band gap energy of $Zn_{0.86}Mn_{0.14}$Te epilayer from 300 K to 10 K. With the decreasing temperature,. strong absorption regions in the absorption spectra were shifted to higher energy side and the absorption peak meaning the free exciton formation appeared near the absorption edge. The band gap energy values of $Zn_{0.86}Mn_{0.14}$Te epilayer at 0 K and 300 K were found to be almost 2.4947 eV and 2.330 eV from the temperature dependence of the free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer, respectively. The free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer without GaAs substrate was larger 15.4 meV than photoluminescence peak position energy at 10 K. This energy difference between two peaks was analysed to be Stokes shift.

• Journal of the Mineralogical Society of Korea
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• v.24 no.2
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• pp.73-82
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• 2011

X-ray absorption spectroscopy (XAS) study was conducted using arsenite-sorbed two-line ferrihydrite to investigate the mechanism of surface interactions between two-line ferrihydrite and As(III) (arsenite) which are ubiquitous in nature. The two-line ferrihydrite used was synthesized in the laboratory and the study was undertaken at pHs 4 and 10 to compare the difference in mechanisms of surface interaction between acidic and alkaline environments. The effect of arsenite-adsorbed concentrations on surface complexation was investigated at each pH condition as well. From the results of XAS analyses, the structural parameters of arsenite in the EXAFS revealed that the coordination number and distanceof As-O were 3.1~3.3 and 1.74~1.79 ${\AA}$, respectively, which indicate that the unit structure of arsenite complex formed on the surface of two-line ferrihydrite is $AsO_3$. The dominant structures of As(III)-Fe complex were examined to be bidentate binuclear comer-sharing ($^2C$) and the mixture of bidentate mononuclear edge sharing ($^2E$) and $^2C$ appeared as well. At pH 4, arsenite complex showed different structures on the surface of two-line ferrihydrite, depending on the adsorbed concentrations. At pH 10, on the contrary, the surface structures of arsenite complexes were interpreted to be almost identical, irrespective of the adsorbed concentrations of arsenite. Consequently, this microscopic XAS results support the results of macroscopic adsorption experiments in which the surface interaction between arsenite and two-line ferrihydrite is significantly influenced by pH conditions as well as arsenite concentrations.

• Korean Journal of Remote Sensing
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• v.27 no.5
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• pp.613-623
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• 2011

This study assessed the feasibility to apply Two-band and Three-band reflectance models for chlorophyll-a estimation in turbid productive waters whose scale is smaller and narrower than ocean using a high spatial resolution image. Those band ratio models were successfully applied to analyzing chlorophyll-a concentrations of ocean or coastal water using Moderate Imaging Spectroradiometer(MODIS), Sea-viewing Wide Field-fo-view Sensor(SeaWiFS), Medium Resolution Imaging Spectrometer(MERIS), etc. Two-band and Three-band models based on band ratio such as Red and NIR band were generally used for the Chl-a in turbid waters. Two-band modes using Red and NIR bands of RapidEye image showed no significant results with $R^2$ 0.38. To enhance a band ratio between absorption and reflection peak, We used red-edge band(710 nm) of RapidEye image for Twoband and Three-band models. Red-RE Two-band and Red-RE-NIR Three-band reflectance model (with cubic equation) for the RapidEye image provided significance performances with $R^2$ 0.66 and 0.73, respectively. Their performance showed the 'Approximate Prediction' with RPD, 1.39 and 1.29 and RMSE, 24.8, 22.4, respectively. Another three-band model with quadratic equation showed similar performances to Red-RE two-band model. The findings in this study demonstrated that Two-band and Three-band reflectance models using a red-edge band can approximately estimate chlorophyll-a concentrations in a turbid river water using high-resolution satellite image. In the distribution map of estimated Chl-a concentrations, three-band model with cubic equation showed lower values than twoband model. In the further works, quantification and correction of spectral interferences caused by suspended sediments and colored dissolved organic matters will improve the accuracy of chlorophyll-a estimation in turbid waters.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.2
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• pp.49-55
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• 2001

ZnO films were fabricated on p-type Si(100) wafer ITO glass and quartz glass by the sol-gel process using zinc acetate dihydrate as starting material. A homogeneous and stable solution was prepared by dissolving the zinc acetate dihydrate in a solution of 2-methoxyethanol and monoethanolamine (MEA). ZnO films were deposited by spin-coating at 2800 rpm for 25 s and were dried on a hot plate at $250^{\circ}C$ for 10 min. Crystallization of the films was carried out at $400^{\circ}C$~$800^{\circ}C$ for 1 h in air. X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), UV-vis transmittance spectroscopy, FTIR transmittance spectroscopy and Photoluminescence (PL) spectroscopy measurements have been used to study the structural and optical properties of the films. ZnO films highly oriented along the (002)plane were obtained. In all cases the films were found to be transparent (above 70%) in visible range with a sharp absorption edge at wavelengths of about 380nm, which is very close to the intrinsic band-gap of ZnO(3.2 eV). The low temperature band-edge photoluminescence revealed a complicated multi-line structure in terms of bound exciton complexes and the phonon replicas.