• Journal of the Korean Ceramic Society
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• v.17 no.4
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• pp.203-207
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• 1980

The optical absorption of high index glasses of the system TiO2-BaO-B2O3 prepared from the raw materials for an optical waveguide glass has been measured in the near ultraviolet region. The amount of Ti3+ in the glass could be reduced to a level less than 5 ppm by melting a batch added with pure nitric acid, using a fused quartz crucible in an oxygen gas atmosphere. The ultra-pure glass of 10mm thick prepared in such a way did not show any appreciable color even for the one containing 30 mol% TiO2 and having refractive index nD of 1.84 and Abbe's number vD of 28.8. The wavelength of ultraviolet absorptin edge was longer for the glass of higher index and higher dispersdion. The melting of a TiO2 containing glass in a platinum crucible resulted in a coloration of the glass due to the dissolved plutinum from the crucible, which was more intense for the one containing larger amount of TiO2.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.11a
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• pp.960-963
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• 2007

In this paper, development of the noise barrier analysis program is described. The upper part of barriers may have complicated shapes like "Y", "T", inverted L, and other shapes. The insertion loss of the barrier is predicted by summation of multiple diffractions occurring at top edge points. In addition, the program considers diffractions occurring at both vertical sides, while reflections from ground due to mirror images are also included. In case of two barriers at both sides of the road, reflections from the other side of barriers are considered, in which magnitudes are decreased by the ratio of absorption coefficient.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.32.1-32.1
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• 2011

Ultra thin tantalum nitride (TaNx) films with various thicknesses (10 nm to 40 nm) have been deposited by rf magnetron sputtering technique on glass substrates. The as deposited films were systematically characterized by several analytical techniques such as X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, atomic force microscopy, UV-Vis-NIR double beam spectrophotometer and four point probe method. From the XRD results, the as deposited films are in amorphous nature, irrespective of the film thicknesses. The films composition was changed greatly with increasing the film thickness. SEM micrographs exhibited the densely pack microstructure, and homogeneous surface covered by small size grains at lower thickness deposited films. The surface roughness of the films was linearly increases with increasing the films thickness, consequently the transmittance decreased. The absorption edge was shifted towards higher wavelength as the film thickness increases.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1298-1300
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• 2007

The interface between SiNx and ZnO was investigated with Near Edge X-ray Absorption Fine Structure (NEXAFS) for ZnO based thin film transistor (TFT) applications. Impurity species were interstitial $N_2$ molecules at the SiNx / ZnO interface. The evolution of $N_2$ is decreased with increasing of anneal temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.40-43
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• 1995

In this paper, structual, optical and electrical properties of CdZnS thin films prepared by electron beam evaporation method were studied. The crysta1 structure of CdZnS films deposited was hexagonal type with preferential orientation of the (002) plane parallel to the substrate. The results of optical transmittance of the CdZnS film show that absorption edge is shifted to ZnS and optical bandgap was larger wish increasing ZnS content. The resistivity of the CdZnS film is decreasing with increasing ZnS content and mininum for 20 mole%.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.277-277
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• 2006

Conducting polymers (e.g. poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylen vinylene] (MEH-PPV)) confined in one-dimensional nanoscale channels of mesoporous materials, are expected to lead the novel applications for electroconductive and optoelectronic devices. We investigated the adsorption behavior of MEH-PPV on organically surface-modified mesoporous silica (FSM-16) and mesoporous organosilica. The amount of the confined MEH-PPV was found to strongly depend on the surface modifications of the mesoporous materials. The optical absorption edge of the confined MHE-PPV was clearly blue-shifted when compared to that of a free MHE-PPV.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.669-676
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• 1995

In this study, EO glass films were deposited by R.F. magnetron sputtering using EO glass target. The glass formation of the EO film was greatly dependent on the substrate temperature and the crystallization started at approximately 28$0^{\circ}C$. As the temperature of the substrate or the oxygen content in the sputtering gas increased, UV/VIS/NIR absorption edge moved toward longer wavelength. A wave guiding phenomenon was observed from the prism-coupler experiment and a fluorescence of 1.06${\mu}{\textrm}{m}$ originated from 4Fe3/2longrightarrow4I11/2 transition of Nd3+ was detected from the film containing Nd3+ ions.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.71-79
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• 1994

In this paper, $As_{40}Se_{50-x}S_[x}Ge_{10}$(x=0, 25, 35, at.%) bulk and thin films, to develope device of reversible hologram, proved amorphous by X-RD analysis. On the thin films with composition rate, as Se-doped-quantity increased, absorption edge shifted to long wavelength, and we found that reversible photodarkening effect occurred when thin films are exposed and annealed. Optical energy gap was larger when thin films are annealed than exposed. In this effect thin films structurally stabilized by annealing. It is to formed grating hologram by the bragg method on the $As_{40}Se_{15}S_[35}Ge_{10}$ thisn films with the best transmittance properties As polariging angle grew larger, we found that maximum diffraction efficiency became smaller, and obtained it of 4.5% on the thin fim thicknesss of 0.6 m, polarizing angle of 40$^[\circ}$ and exposing for 20sec.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.3 s.174
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• pp.685-690
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• 2000

This paper deals with the stress singularity induced at the interface corner between the viscoelastic thin film and the rigid substrate as the film absorbs moisture from the ambient environment. Th e time domain boundary element method is employed to investigate the behavior of interface stresses. The order of the free-edge singularity is obtained numerically for a given viscoelastic model. It is shown that the stress singularity factor is relaxed with time, while the order of the singularity increases with time for the viscoelastic model considered.

• Bulletin of the Korean Chemical Society
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• v.28 no.3
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• pp.413-416
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• 2007

The adsorption and surface reactions of NO on a VO/V(110) surface have been investigated using X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption fine structure, and temperature programmed desorption (TPD) technique. NO is molecularly adsorbed on VO/V(110) at 80 K. As the surface coverage of NO increases, the NO dimer is formed on the surface at 80 K. Both NO and (NO)2 are adsorbed on the surface with the N-O bond perpendicular to the surface. (NO)2 decomposes at ~100 K and the reaction product is desorbed as N2O. Decomposition of NO takes place when the surface temperature is higher than 273 K.