한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Investigation of the ZnO based TFT interface properties with synchrotron radiation analysis

  • Choi, Jong-Kwon (Devices & Materials Laboratory, LG Electronics Institute of Technology) ;
  • Baik, Min-Kyung (Devices & Materials Laboratory, LG Electronics Institute of Technology) ;
  • Joo, Min-Ho (Devices & Materials Laboratory, LG Electronics Institute of Technology) ;
  • Park, Kyu-Ho (Devices & Materials Laboratory, LG Electronics Institute of Technology) ;
  • Lee, Jay-Man (Digital Display Research Laboratory, LG Electronics) ;
  • Kim, Myung-Seop (Digital Display Research Laboratory, LG Electronics) ;
  • Yang, Joong-Hwan (Digital Display Research Laboratory, LG Electronics)
  • Published : 2007.08.27
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Abstract

The interface between SiNx and ZnO was investigated with Near Edge X-ray Absorption Fine Structure (NEXAFS) for ZnO based thin film transistor (TFT) applications. Impurity species were interstitial $N_2$ molecules at the SiNx / ZnO interface. The evolution of $N_2$ is decreased with increasing of anneal temperature.

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