• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2001.04a
• /
• pp.1117-1120
• /
• 2001

Chemical mechanical planarization(CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There have been serious problems in CMP in terms of repeatability and defects in patterned wafers. Since IBM's official announcement on Copper Dual Damascene(Cu2D) technology, the semiconductor world has been engaged in a Cu2D race. Today, even after~3years of extensive R&D work, the End-of-Line(EOL) yields are still too low to allow the transition of technology to manufacturing. One of the reasons behind this is the myriad of defects associated with Cu technology. Especially, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasive and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using Ce$O_2$ is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method for developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• Journal of the Korean Society for Precision Engineering
• /
• v.18 no.12
• /
• pp.192-199
• /
• 2001

Chemical mechanical planarization (CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There hale been serious problems in CMP in terms of repeatability and deflects in patterned wafers. Especial1y, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasives and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using CeO$_2$is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method fur developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.06a
• /
• pp.649-652
• /
• 2005

Abrasive jet machining is a well-known process for patterning window glass and mirrors. The technics is now being developed for the production structure with high precision. This paper describes erosion profile modeling of micro abrasive jet machining and compares with other researcher's model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.140-143
• /
• 2004

Chemical mechanical polishing(CMP) is essential technology to secure the depth of focus through the global planarization of wafer. But a variety of defects such as contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the resistance because they decrease the interconnect section area, and ultimately reduce the life time of the semiconductor. Due to this dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred over-polishing. Decreasing of abrasive concentration results in advanced pattern selectivity which can lead the uniform removal in chip and decrease of over-polishing. The fixed abrasive pad was applied and tested to reduce dishing and erosion in this paper. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed fixed abrasive pad and chemicals.

• Journal of the Korean Society for Precision Engineering
• /
• v.22 no.2
• /
• pp.38-45
• /
• 2005

Chemical mechanical polishing(CMP) has been widely accepted for the planarization of multi-layer structures in semiconductor fabrication. But a variety of defects such as abrasive contamination, scratch, dishing, erosion and corrosion are occurred during CMP. Especially, dishing and erosion defects increase the metal resistance because they decrease the interconnect section area, and ultimately reduce the lift time of the semiconductor. Due to this reason dishing and erosion must be prohibited. The pattern density and size in chip have a significant influence on dishing and erosion occurred by over-polishing. The fixed abrasive pad(FAP) was applied and tested to reduce dishing and erosion in this paper. The abrasive concentration decrease of FAP results in advanced pattern selectivity which can lead the uniform removal in chip and declining over-polishing. Consequently, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with proposed FAP and chemicals.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.10a
• /
• pp.488-491
• /
• 2005

Abrasive Jet Micromachining (AJM) is a process that uses high pressure air with micron-sized particles to erode a substrate. It has been considered as the most economic and appropriate technique to pattern glass surfaces for the flat panel applications. To accelerate the industrialization of AJM, it is necessary to understand the erosion mechanisms thoroughly. Thus, this paper introduces a new method to model the erosion mechanism in AJM. The model is developed by using the concept of the accumulation of the microdeformation caused by each particle. And this paper proposes the model added the effects of second impact. The developed model is used to simulate the erosion profile, and is compared with the model considered only first impact. It can be concluded that the proposed model predicts the erosion profile more accurately.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.2 no.4
• /
• pp.17-24
• /
• 2003

Chemical mechanical polishing(CMP) has been applied for planarization of topography after patterning process in semiconductor fabrication process. Tungsten CMP is necessary to build up interconnects of semiconductor device. But the tungsten dishing and the oxide erosion defects appear at end-point during tungsten CMP. It has been known that the generation of dishing and erosion is based on the over-polishing time, which is determined by pattern selectivity. Fixed abrasive pad takes advantage of decreasing the defects resulting flam reducing pattern selectivity because of the lower abrasive concentration. The manufacturing technique of fixed abrasive pad using hydrophilic polymers is introduced in this paper. For application to tungsten CMP, chemicals composed of oxidizer, catalyst, and acid were developed. In comparison of the general pad and slurry for tungsten CMP, the fixed abrasive pad and the chemicals resulted in appropriate performance in point of removal rate, uniformity, material selectivity and roughness.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2006.10a
• /
• pp.495-496
• /
• 2006

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2007.06a
• /
• pp.647-648
• /
• 2007

• International Journal of Fluid Machinery and Systems
• /
• v.10 no.2
• /
• pp.146-153
• /
• 2017

Sediment flow through hydropower components causes hydro-abrasive erosion resulting in loss of efficiency, interruptions in power production and downtime for repair/maintenance. Online instruments are required to measure/capture the variations in sediment parameters along with collecting samples manually to analyse in laboratory for verification. In this paper, various sediment parameters viz. size, concentration (TSS), shape and mineral composition relevant to hydro-abrasive erosion were measured and discussed with respect to a hydropower plant in Himalayan region, India. A multi-frequency acoustic instrument was installed at a desilting chamber to continuously monitor particle size distribution (PSD) and TSS entering the turbine during 27 May to 6 August 2015. The sediment parameters viz. TSS, size distribution, mineral composition and shape entering the turbine were also measured and analysed, using manual samples collected twice daily from hydropower plant, in laboratory with instruments based on laser diffraction, dynamic digital image processing, gravimetric method, conductivity, scanning electron microscope, X-ray diffraction and turbidity. The acoustic instrument was able to capture the variation in TSS; however, significant deviations were found between measured mean sediment sizes compared to values found in the laboratory. A good relation was found for turbidity ($R^2=0.86$) and laser diffraction ($R^2=0.93$) with TSS, which indicated that turbidimeter and laser diffraction instrument can be used for continuous monitoring of TSS at the plant. Total sediment load passed through penstock during study period was estimated to be 15,500 ton. This study shall be useful for researchers and hydropower managers in measuring/monitoring sediment for hydro-abrasive erosion study in hydropower plants.