• Bulletin of the Korean Chemical Society
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• 제6권4호
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• pp.218-221
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• 1985

Transient charging and discharging currents as well as space charge limited currents have been measured in biaxially stretched poly(vinylidene fluoride) film under various poling fields and temperatures. At low temperatures and short poling times, the I-V characteristics showed shallow trap behavior. When the current values extrapolated to the infinite time, the I-V characteristics indicate that the distribution of the trap energy levels is uniform or very broad. The abnormal suppression of current at higher poling voltages and the high discharge rate observed also in the same voltage range are attributed to the morphological changes due to dipole reorientation.

• The Korean Journal of Physiology and Pharmacology
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• 제12권1호
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• pp.31-35
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• 2008

Lysophosphatidylcholine (LPC), a metabolite of membrane phospholipids by phospholipase $A_2$, has been considered responsible for the development of abnormal vascular reactivity during atherosclerosis. $Ca^{2+}$ influx was shown to be augmented in atherosclerotic artery which might be responsible for abnormal vascular reactivity. However, the mechanism underlying $Ca^{2+}$ influx change in atherosclerotic artery remains undetermined. The purpose of the present study was to examine the effects of LPC on L-type $Ca^{2+}$ current $(I_{Ca(L)})$ activity and to elucidate the mechanism of LPC-induced change of $I_{Ca(L)}$ in rabbit portal vein smooth muscle cells using whole cell patch clamp. Extracellular application of LPC increased $I_{Ca(L)}$ through whole test potentials, and this effect was readily reversed by washout. Steady state voltage dependency of activation or inactivation properties of $I_{Ca(L)}$ was not significantly changed by LPC. Staurosporine (100 nM) or chelerythrine $(3{\mu}M)$, which is a potent inhibitor of PKC, significantly decreased basal $I_{Ca(L)}$, and LPC-induced increase of $I_{Ca(L)}$ was significantly suppressed in the presence of PKC inhibitors. On the other hand, application of PMA, an activator of PKC, increased basal $I_{Ca(L)}$ significantly, and LPC-induced enhancement of $I_{Ca(L)}$ was abolished by pretreatment of the cells with PMA. These findings suggest that LPC increased $I_{Ca(L)}$ in vascular smooth muscle cells by a pathway that involves PKC, and that LPC-induced increase of $I_{Ca(L)}$ might be, at least in part, responsible for increased $Ca^{2+}$ influx in atherosclerotic artery.

• 한국화재소방학회논문지
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• 제26권6호
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• pp.24-30
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• 2012

본 연구는 저압 선로의 접촉 부분에서 발생할 수 있는 접촉 불량과 그 부분의 진동이 결합될 경우 발생될 수 있는 불꽃 및 직렬 아크를 검출할 수 있는 방법에 대한 것이다. 일반적으로 전기화재의 원인은 과전류, 단락, 접촉불량 등 여러 가지가 있을 수 있다. 이 중 과전류 및 단락 등은 선로에 흐르는 순간 전류량을 검출하여 감지할 수 있으나, 접촉불량은 전압, 전류값의 초과분 및 파형의 왜곡으로는 검출하기가 어려운 점이 있다. 따라서 본 논문에서는 퍼지논리 및 다차원 기법을 이용하여 최적의 아크 판단 기법을 연구하고, 아크 검출 및 검증을 위한 모의실험과 제어기 실험 및 부하실험을 실시하였다. 그 결과 제어기 및 검출 알고리즘이 여러 가지 부하와 상관없이 정상적인 부하의 파형과 아크 발생시의 파형을 구분하여 성공적으로 직렬아크를 검출하였다.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2008년도 춘계학술대회논문집
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• pp.425-430
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• 2008

To verify the system performance of portable AE leak diagnosis system which can measure with moving conditions, AE activities such as RMS voltage level, AE signal trend, leak rate degree according to AE database, FFT spectrum were measured during operation on total 11 valves of the secondary system in nuclear power plant. AE activities were recorded and analyzed from various operating conditions including different temperature, type of valve, pressure difference, valve size and fluid. The results of this field study are utilized to select the type of sensors, the frequency band for filtering and thereby to improve the signal-to-noise ratio for diagnosis for diagnosis or monitoring of valves in operation. As the final result of application study above, portable type leak diagnosis system by AE was developed. The outcome of the study can be definitely applied as a means of the diagnosis or monitoring system for energy saving and prevention of accident for power plant valve. The purpose of this study is to verify availability of the acoustic emission in-situ monitoring method to the internal leak and operating conditions of the major valves at nuclear power plants. In this study, acoustic emission tests are performed when the pressurized temperature water and steam flowed through glove valve(main steam dump valve) and check valve(main steam outlet pump check valve) on the normal size of 12 and 18 ". The valve internal leak monitoring system for practical field was designed. The acoustic emission method was applied to the valves at the site, and the background noise was measured for the abnormal plant condition. To improve the reliability, a judgment of leak on the system was used various factors which are AE parameters, trend analysis, frequency analysis, voltage analysis and amplitude analysis of acoustic signal emitted from the valve operating condition internal leak.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2007년도 추계학술대회 논문집
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• pp.1482-1504
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• 2007

철도시스템은 열차견인을 위한 고전압시스템, 열차제어를 위한 저전압시스템을 사용하며, 철도를 구성하는 시스템이 지형적으로 광범위하게 분포되어 있다. 철도시스템에서 전차선의 지락에 의한 과대한 고장전류, 낙뢰 등에 의한 이상 고전압이 발생되어 사람의 사상 및 기기의 고장이 발생할 수 있는데, 지락에 의한 고장전류, 낙뢰에 의한 고전압으로부터 기기를 보호하기 위해서 접지를 설치한다. 각 시스템에 대한 단독접지를 하는 경우에는 기기 상호가 폐회로가 형성되어 이상전류가 흐르게 되어 기기를 정상적으로 작동시키지 못하는 경우가 있다. 따라서 이러한 해결책으로 등전위 접지시스템을 채용한다. 이러한 등전위 접지시스템은 매우 낮은 접지저항을 확보하여야 한다. 본 논문에서는 철도시스템에서 기존의 단독접지시스템에서 현재의 공통접지시스템으로의 변화 및 두 시스템의 시뮬레이션 비교분석과 앞으로의 새로운 접지시스템에 대한 방향에 대해 제시하였다.

• 한국진공학회지
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• 제19권1호
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• pp.72-80
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• 2010

KSTAR ICRF 시스템에서 안테나 전류띠 간 커플링에 의한 전류띠의 전압, 전류 분포 변화와 전류띠 간 전력 전달에 의한 공명현상 그리고 전송선상의 이상 전압 분포 등을 예측하거나 분석하는 것은 그것의 안정적이고 신뢰성 있는 운전을 위해 매우 중요하다. 본 연구에서는 이러한 전류띠 간 커플링에 의한 현상들을 이해하기 위해 ICRF 안테나에서 측정한 S-parameter를 커플링이 고려된 8포트 전송선회로 모델에 적용하여 전류띠의 전송선 회로 모델을 완성하였다. 완성된 전송선 회로모델의 자체유도계수, 상호유도계수, 전기용량성 등은 전류띠의 유한한 길이로 인하여 2D 모델의 값보다 작은 것으로 나타났다. 커플링이 고려된 전류띠의 전송선 회로모델은 공명루프와 결합되어 있는 KSTAR ICRF 시스템의 운전에 활용될 것이다.

• Clinical and Experimental Pediatrics
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• 제61권9호
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• pp.271-278
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• 2018

Purpose: Abnormal potassium channels expression affects vessel function, including vascular tone and proliferation rate. Diverse potassium channels, including voltage-gated potassium (Kv) channels, are involved in pathological changes of pulmonary arterial hypertension (PAH). Since the role of the Kv1.7 channel in PAH has not been previously studied, we investigated whether Kv1.7 channel expression changes in the lung tissue of a monocrotaline (MCT)-induced PAH rat model and whether this change is influenced by the endothelin (ET)-1 and reactive oxygen species (ROS) pathways. Methods: Rats were separated into 2 groups: the control (C) group and the MCT (M) group (60 mg/kg MCT). A hemodynamic study was performed by catheterization into the external jugular vein to estimate the right ventricular pressure (RVP), and pathological changes in the lung tissue were investigated. Changes in protein and mRNA levels were confirmed by western blot and polymerase chain reaction analysis, respectively. Results: MCT caused increased RVP, medial wall thickening of the pulmonary arterioles, and increased expression level of ET-1, ET receptor A, and NADPH oxidase (NOX) 4 proteins. Decreased Kv1.7 channel expression was detected in the lung tissue. Inward-rectifier channel 6.1 expression in the lung tissue also increased. We confirmed that ET-1 increased NOX4 level and decreased glutathione peroxidase-1 level in pulmonary artery smooth muscle cells (PASMCs). ET-1 increased ROS level in PASMCs. Conclusion: Decreased Kv1.7 channel expression might be caused by the ET-1 and ROS pathways and contributes to MCT-induced PAH.

• Journal of the Optical Society of Korea
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• 제19권6호
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• pp.687-694
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• 2015

A photoluminescence (PL) imaging method using a vision camera was employed to inspect InGaN/GaN quantum-well light-emitting diode (LED) epi-wafers. The PL image revealed dark spot defective regions (DSDRs) as well as a spatial map of integrated PL intensity of the epi-wafer. The Shockley-Read-Hall (SRH) nonradiative recombination coefficient increased with the size of the DSDRs. The high nonradiative recombination rates of the DSDRs resulted in degradation of the optical properties of the LED chips fabricated at the defective regions. Abnormal current-voltage characteristics with large forward leakages were also observed for LED chips with DSDRs, which could be due to parallel resistances bypassing the junction and/or tunneling through defects in the active region. It was found that the SRH nonradiative recombination process was dominant in the voltage range where the forward leakage by tunneling was observed. The results indicated that the DSDRs observed by PL imaging of LED epi-wafers were high density SRH nonradiative recombination centers which could affect the optical and electrical properties of the LED chips, and PL imaging can be an inspection method for evaluation of the epi-wafers and estimation of properties of the LED chips before fabrication.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.533-533
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• 2007

The stress effect of SiGe p-type metal oxide semiconductors field effect transistors(MOSFETs) has been investigated to compare device properties using Si bulk and partially depleted silicon on insulator(PD SOI). The electrical properties in SiGe PD SOI presented enhancements in subthreshold slope and drain induced barrier lowering in comparison to SiGe bulk. The reliability of gate oxides on bulk Si and PD SOI has been evaluated using constant voltage stressing to investigate their breakdown (~ 8.5 V) characteristics. Gate leakage was monitored as a function of voltage stressing time to understand the breakdown phenomena for both structures. Stress induced leakage currents are obtained from I-V measurements at specified stress intervals. The 1/f noise was observed to follow the typical $1/f^{\gamma}$ (${\gamma}\;=\;1$) in SiGe bulk devices, but the abnormal behavior ${\gamma}\;=\;2$ in SiGe PD SOI. The difference of noise frequency exponent is mainly attributed to traps at silicon oxide interfaces. We will discuss stress induced instability in conjunction with the 1/f noise characteristics in detail.

• ETRI Journal
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• 제29권3호
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• pp.371-380
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• 2007

This paper proposes a new automatic compensation network (ACN) for a system-on-chip (SoC) transceiver. We built a 5 GHz low noise amplifier (LNA) with an on-chip ACN using 0.18 ${\mu}m$ SiGe technology. This network is extremely useful for today's radio frequency (RF) integrated circuit devices in a complete RF transceiver environment. The network comprises an RF design-for-testability (DFT) circuit, capacitor mirror banks, and a digital signal processor. The RF DFT circuit consists of a test amplifier and RF peak detectors. The RF DFT circuit helps the network to provide DC output voltages, which makes the compensation network automatic. The proposed technique utilizes output DC voltage measurements and these measured values are translated into the LNA specifications such as input impedance, gain, and noise figure using the developed mathematical equations. The ACN automatically adjusts the performance of the 5 GHz LNA with the processor in the SoC transceiver when the LNA goes out of the normal range of operation. The ACN compensates abnormal operation due to unusual thermal variation or unusual process variation. The ACN is simple, inexpensive and suitable for a complete RF transceiver environment.