• 한국진공학회지
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• 제21권4호
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• pp.212-218
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• 2012

RF 마그네트론 스퍼터에 의해 만들어진 AZO 박막을 기판의 화학적 특성에 따른 광학적 특성에 대하여 조사하였다. 기판은ICP-CVD방법으로 제작된 SiOC 박막으로 화학적 특성의 변화를 관찰하기 위해서 산소와 아르곤(DMDMOS)가스의 유량비를 다르게 하여 증착하였다. 아르곤의 유량이 증가할수록 Si-O 결합이 증가하였으며, 비정질구조가 증가되었다. 비정질도가 높은 SiOC 박막 위에 성장된 AZO 박막의 거칠기는 감소하였으며, 표면의 평탄도가 개선되었다. 더불어 비정질도가 높은 SiOC박막 위에 성장된 AZO 박막에서 자외선 영역의 방사 강도가 제일 높았다.

• 한국전기전자재료학회논문지
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• 제26권7호
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• pp.528-533
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• 2013

We focused on the development of red azo colorants with high thermal stability and good solubility for LCD color filter in this research. For the synthesis of hybrid azo colorants, we used the couplers of aniline, naphthol and benzoimidazol functional group. The synthesized hybrid azo colorants were charaterized by using NMR, UV/visible spectroscopy, FT-IR, EA and TGA. They represented the maximum absorption wavelengths which are longer than 500 nm in UV/visible spectrum. So they were confirmed to be suitable for red colorants of LCD color filter. Azo compound (1a, 1b) with aniline functional group had good solubility in organic solvents such as acetone, methanol, chloroform and PGMEA. Moreover azo compounds (1c, 1d and 1e) with naphthol and benzoimidazolone functional group gave excellent thermal stability higher than $250^{\circ}C$ in TGA thermograms.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.357-362
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• 2007

AZO(Aluminum-doped Zinc Oxide) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with ITO(Indium Tin Oxide). AZO films have been deposited on glass (corning 1737) substrates by RF magnetron sputtering. The AZO film was post-annealed at $600^{\circ}C$ for 2 hr with $N_2$ atmosphere. The AZO films were used as an anode contact to fabricate OLEDs(Organic Light Emitting Diodes). OLEDs with $AZO/TPD/Alq_3/Al$ configuration were fabricated by thermal evaporation. We investigated that the electric, structural and optical properties of AZO thin films, which measured using the methods of XRD, SEM, Hall measurement and Spectrophotometer. The current density-voltage and luminescence-voltage properties of devices were studied and compared with ITO devices fabricated under the same conditions.

• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.32-36
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• 2018

For various oxygen($O_2$) to argon(Ar) gas ratio, aluminum-doped zinc oxide(AZO) films were deposited for 3 min at different duty ratio by changing reverse pulse times. As the duty ratio increased, the thickness of the AZO film decreased and the sheet resistance increased. It can be concluded that When sputtering AZO Thin film, oxygen interfered with sputtering. When the reverse time was increased, the thickness of AZO was proportional to the real sputtering time and decreased. From the optical transmittance and sheet resistance, it was possible to obtain a higher figure of merits of AZO at a lower reverse pulse time. Even at the short reversed pulse time, it can be concluded that the accumulated charges on the AZO target are completely cleared. At a lower reverse pulse time, pulsed-DC sputtering of AZO is expected to be used instead of DC sputtering in the deposition of transparent conductive oxide(TCO) films without any degradation in thickness and structural/electrical characteristics.

• 한국재료학회지
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• 제21권6호
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• pp.341-346
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• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

• Biotechnology and Bioprocess Engineering:BBE
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• 제8권2호
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• pp.101-105
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• 2003

Recombinant bioluminescent bacteria were used to monitor and classify the to xicity of azo dyes. Two constitutive bioluminescent bacteria, Photobacterium phosphoreum and Es-Cherichia coli, E, coli GC2 (lac::luxCOABE), were used to detect the cellular toxicity of the azo dyes. In addition, four stress-inducible bioluminestent E. coli, DPD2794 (recA::luxCDABE), a DNA damage Sensitive strain; DPD2540 (fabA::luxCDABE), a membrane damage sensitive strain; DPD2511 (katG::luxCDABE), an oxidative damage sensitive strain; and TV1061 (grpE::luxCDABE), a protein damage sensitive strain, were used to provide information about the type of toxicity caused by crystal violet, the most toxic dye of the 16 azo dyes tested. These results suggest that azo dyes result in serious cellular toxicity in bacteria, and that toxicity monitoring and classific ation of some azo dyes, In the field, may be possible using these recombinant bioluminescent bacteria.

• 한국생물공학회:학술대회논문집
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• 한국생물공학회 2003년도 생물공학의 동향(XIII)
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• pp.398-401
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• 2003

Azo dyes are aromatic compounds characterized by one or more azo bonds $(R_l-N=N-R_2)$. More than 800,000 tons of dyes are produced annually worldwide, of which 60-70% are azo dyes. During manufacturing, an estimated 10-15% is released into the environment. Aside from their negative aesthetic effects, certain azo dyes have been shown to be toxic and, in some cases, these compounds are carcinogenic and mutagenic. To establish biological wastewater treatment of azo dye, it is essential to discover azo dye-degrading microorganisms. In this report, sludge-contaminated with dyes were gathered through wastewater outlets from the industrial regions. The following to separation of bacteria within them, bacteria which decolorize methyl red, a azo dye, were selected and destined.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.91-92
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• 2006

Aluminum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). AZO films have been deposited on glass (corning 1737) substrates by RF magnetron sputtering system. The electrical resistivity of AZO films was $1.81{\times}10^{-2}{\Omega}cm$ and the average transmittance in the visible range 400-800 nm was more than 76% Organic light-emitting diodes (OLEDs) with AZO/TPD/$Alq_3$/Al configuration were fabricated. The current density-voltage properties of devices were studied and compared with ITO devices fabricated under the same conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.290-291
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• 2006

We prepared the multilayer with Al doped ZnO (AZO)/Ag/AZO structure. The multilayer were deposited with various thickness of Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. To investigate the electrical, optical and structural properties, we used Hall Effect measurement system, four-point probes. UV-VIS spectrometer with a wavelength of 300 - 100nm, X-ray Diffractometer(XRD) and scanning electron microscopy (SEM). We obtained multilayer thin film with the low resistivity $5,9{\times}10^{-5}{\Omega}cm$ and the average transmittance of 86% m the visible range (400 - 800nm).

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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• pp.51-55
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• 2006

ITO/Ag/AZO and AZ0/Ag/ITO multi-layer films deposited on glass substrate by RF magnetron sputtering have a much better electrical properties than ITO and AZO single-layer films. The multi-layer structure was consisted of three layers of ITO, Ag and AZO. The optimum working pressure of AZO layers deposition was determined to be $1.0{\times}10^{-2}$ torr for high optical transmittance and good electrical conductivity. The electrical and optical properties of sub/IT0/Ag/AZO were higher than those of sub/AZ0/Ag/ITO multi-layer films.