• 한국재료학회지
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• 제33권4호
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• pp.142-150
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• 2023

AZO/Cu/AZO thin films were deposited on glass by RF magnetron sputtering. The specimens showed the preferred orientation of (0002) AZO and (111) Cu. The Cu crystal sizes increased from about 3.7 nm to about 8.5 nm with increasing Cu thickness, and from about 6.3 nm to about 9.5 nm with increasing heat treatment temperatures. The sizes of AZO crystals were almost independent of the Cu thickness, and increased slightly with heat treatment temperature. The residual stress of AZO after heat treatment also increased compressively from -4.6 GPa to -5.6 GPa with increasing heat treatment temperature. The increase in crystal size resulted from grain growth, and the increase in stress resulted from the decrease in defects that accompanied grain growth, and the thermal stress during cooling from heat treatment temperature to room temperature. From the PL spectra, the decrease in defects during heat treatment resulted in the increased intensity. The electrical resistivities of the 4 nm Cu film were 5.9×10^-4 Ω·cm and about 1.0×10^-4 Ω·cm for thicker Cu films. The resistivity decreased as the temperature of heat treatment increased. As the Cu thickness increased, an increase in carrier concentration resulted, as the fraction of AZO/Cu/AZO metal film increased. And the increase in carrier concentration with increasing heat treatment temperature might result from the diffusion of Cu ions into AZO. Transmittance decreased with increasing Cu thicknesses, and reached a maximum near the 500 nm wavelength after being heat treated at 200 ℃.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.339-344
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• 2017

An all-transparent photodetector was fabricated by structuring $Cu_2O$/ZnO/AZO/ITO on a glass substrate. The visible-range transmittance was as high as 80%, which ensures clear vision forhuman eyes. High-transparency metal conductive oxides (p-type $Cu_2O$ and n-type ZnO) were appliedto form the transparent p/n junction. The functional AZO layer was adopted to improve the transparent photodetector performance between the ZnO and ITO, improving the photoresponses because of its electrical conductivity. To clarify the AZO functionality, a comparator device was prepared without the AZO layer in the formation of $Cu_2O$/ZnO/ITO/Glass. The $Cu_2O$/ZnO/AZO/ITO device provided a rectifying ratio of 113.46, significantly better than the 9.44 of the $Cu_2O$/ZnO/ITO device. In addition, the $Cu_2O$/ZnO/AZO/ITO device's photoresponses at short wavelengths were better than those of the comparator. The functioning AZO layer provides ahigh-performing transparent Cu oxide photodetector and may suggest a route for the design of efficient photoelectric devices.

• 한국재료학회지
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• 제30권6호
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• pp.285-291
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• 2020

Recent advances in technology using ultra-thin noble metal film in oxide/metal/oxide structures have attracted attention because this material is a promising alternative to meet the needs of transparent conduction electrodes (TCE). AZO/Ag/AZO multilayer films are prepared by magnetron sputtering for Cu₂ZnSn(S,Se)₄ (CZTSSe) of kesterite solar cells. It is shown that the electrical and optical properties of the AZO/Ag/AZO multilayer films can be improved by the very low resistivity and surface plasmon effects due to the deposition of different thicknesses of Ag layer between oxide layers fixed at AZO 30 nm. The AZO/Ag/AZO multilayer films of Ag 15 nm show high mobility of 26.4 ㎠/Vs and low resistivity and sheet resistance of 3.58^⁎10^-5 Ωcm and 5.0 Ω/sq. Also, the AZO/Ag (15 nm)/AZO multilayer film shows relatively high transmittance of more than 65 % in the visible region. Through this, we fabricated CZTSSe thin film solar cells with 7.51 % efficiency by improving the short-circuit current density and fill factor to 27.7 mV/㎠ and 62 %, respectively.

• 한국표면공학회지
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• 제49권3호
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• pp.252-259
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• 2016

In order to form an aluminum-doped zinc oxide (AZO) transparent electrode film on a polyethylene terephthalate (PET) substrate used for a flexible display substrate, the AZO transparent electrode was produced at low temperature without substrate heating. Even though the produced electrode showed characteristic optical transmittance of 90 % (at 550 nm) and sheet resistance within $100{\Omega}/sq$, cracks occurred 10 minutes after loading applied 2 mm radius of curvature, and the sheet resistance increased linearly. An insertion layer of ZrCu was formed between the AZO film and the PET substrate to suppress the generation of cracks on the AZO film. It was verified that the crack was not generated 30 minutes after the loading of 2 mm radius of curvature, and no increase in sheet resistance was recorded. There was also not cracks in the dynamic bending test of 4 mm radius, but surface resistance was slightly increased. As a result, the ZrCu insertion film improved the interfacial adhesion between the substrate and AZO film layer without increasing sheet resistance and decreasing transmittance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.688-688
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• 2013

Al-doped ZnO (AZO) thin films have attracted a lot of attention as a cheap transparent conducting oxide (TCO) material that can replace the expensive Sn-doped In2O3. In particular, AZO thin films are widely used as a window layer of chalcogenide-based thin film solar cells such as Cu(In,Ga)Se2 and Cu2ZnSnS4 (CZTS). Mostly important requirements for the window layer material of the thin film solar cells are the high transparency and the low sheet resistance, because they influence the light absorption by the activelayer and the electron collection from the active layer, respectively. In this study, we prepared the AZO thin films by RF magnetron sputtering using a ZnO/Al2O3 (98：2wt%) ceramic target, and the effect of the sputtering condition such as the working pressure, RF power, and the working distance on the optical, electrical, and crystallographic properties of the AZO thin films was investigated. The AZO thin films with optimized properties were used as a window layer of CZTS thin film solar cells. The CZTS active layers were prepared by the electrochemical deposition and the subsequent sulfurization process, which is also one of the cost-effective synthetic approaches. In addition, the solar cell properties of the CZTS thin film solar cells, such as the photocurrent density-voltage (J-V) characteristics and the external quantum efficiency (EQE) were investigated.

• 한국세라믹학회지
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• 제48권4호
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• pp.328-333
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• 2011

The influence of Al-doped ZnO (AZO) thin films degraded under high temperature and damp heat on the performance deterioration of Cu(In,Ga)$Se_2$ (CIGS) solar cells was investigated. CIGS solar cells with AZO/CdS/CIGS/Mo structure were prepared on glass substrate and exposed to high temperature ($85^{\circ}C$) and damp heat ($85^{\circ}C$/85% RH) for 1000 h. As-prepared CIGS solar cells had 64.91% in fill factor (FF) and 12.04% in conversion efficiency. After exposed to high temperature, CIGS solar cell had 59.14% in FF and 9.78% in efficiency, while after exposed to damp heat, it had 54.00% in FF and 8.78% in efficiency. AZO thin films in the deteriorated CIGS solar cells showed increases in resistivity up to 3.1 times and 4.4 times compared to their initial resistivity after 1000 h of high temperature and damp heat exposure, respectively. These results can be explained by the decreases in carrier concentration and mobility due to diffusion or adsorption of oxygen and moisture in AZO thin films. It can be inferred that decreases in FF and conversion efficiency were caused by an increase in series resistance, which resulted from an increase in resistivity of AZO thin films degraded under high temperature and damp heat.

• 한국표면공학회지
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• 제51권2호
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• pp.116-125
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• 2018

Aluminum-doped zinc oxide (AZO) is a commonly used material for the front contact layer of chalcopyrite $CuInGaSe_2$ (CIGS) based thin film solar cells since it satisfies the requisite optical and electrical properties with low cost and abundant elemental availability. Low-resistivity and high-transmission front contacts have been developed for high-performance CIGS solar cells, and nearly meet the required performance. However, the durability of the cell especially for the corrosion resistance of AZO films has not been studied intensively. In this work, AZO films were prepared on Corning glass 7059 substrates by radio frequency magnetron sputtering depending on the hydrogen content. The electrical and optical properties and electrochemical corrosion resistance of the AZO films were evaluated as a function of the hydrogen content. With increasing hydrogen content to 6 wt%, the crystallinity, crystal size, and surface roughness of the films increased, and the resistivity decreased with increased carrier concentration, Hall mobility, oxygen vacancies, and $Zn(OH)_2$ binding on the AZO surface. At a hydrogen content of 6 wt%, the corrosion resistance was also relatively high with less columnar morphology, shallow pore channels, and lower grain boundary angles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.421-421
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• 2012

Cu(In,Ga)$Se_2$ (CIGS) 화합물은 직접천이형 반도체로 열적으로 매우 안정하고 에너지밴드갭이 1.04 eV로 이상적인 값에 가깝고, 특히 높은 광흡수계수를 가지기 때문에 박막 태양전지로서 커다란 응용 잠재력을 갖고 있는 광흡수층 재료이다. CIGS 화합물 박막 태양전지의 효율은 연구실에서는 ~20%를 높은 효율을 보고하고 있으며, 모듈급에서도 ~13%의 효율을 보이고 있다. 그러나 CIGS 박막 태양전지를 대면적 또는 양산화에 적용하기 위해서는 20년 이상의 장기적인 수명을 보장할 수 있는 내구성을 갖추어야 한다. 본 연구에서는 CIGS 모듈의 장기적인 신뢰성을 평가하기 위해 CIGS PV 모듈을 대상으로 대표적인 고온 고습 조건인 IEC-61646 규격을 이용하여 $85^{\circ}C$/85% RH에서 1000시간 동안 가속시험이 수행되었고, 고온 환경하에서 모듈의 성능 저하에 미치는 영향을 고찰하기 위해 모듈을 $85^{\circ}C$에서 1000시간 노출시켰다. 두 종류의 가속 스트레스시험 후에 모듈들의 외형적인 노화현상 및 전기적 열화 성능을 분석하였다. 또한 모듈의 효율저하의 원인을 규명하기 위해 모듈 구성 재료 중 충진재료로 사용하는 EVA sheet와 투명전극 AZO를 대상으로 고장분석을 수행하였다. AZO의 미세구조 관찰, 결정상 분석, XPS 분석 및 전기적 분석과 EVA sheet의 FT-IR 분석과 TG-DSC 분석들을 종합하여 CIGS PV 모듈의 성능저하의 원인을 규명하였다.

• 상하수도학회지
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• 제23권4호
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• pp.431-438
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• 2009

The purpose of this study was to evaluate the performances of zero-valent iron (ZVI) combined SBR (Z-SBR) process in decolorization and organic removal of synthetic dye wastewater. The batch test for optimizing the operation parameters of ZVI column showed that the appropriate EBCT was around 11 min and the pH of the dye wastewater was below 7.0. During the step increase of influent color unit from 300 to 1,000cu, about 53 to 79% decolorization efficiency could be achieved in control SBR (C-SBR, without ZVI column), which resulted from destroying azo bond of synthetic dye in anaerobic condition. For the same influent color loading, Z-SBR showed always higher decolorization efficiency than C-SBR with an aid of ZVI reducing power. The TCOD concentration in Z-SBR effluent was 20-30mg/L lower than C-SBR effluent although the TCOD before and after ZVI column was nearly same. It means that breakdown of azo bond by ZVI reducing power could increase biodegradability of synthetic dye wastewater.

• Bulletin of the Korean Chemical Society
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• 제27권5호
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• pp.642-648
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• 2006

Mushroom tyrosinase (MT) structural changes in the presence of $Cu ^{2+}$ and $Ni ^{2+}$ were studied separately. Far-UV CD spectra of the incubated MT with the either of the metal ions indicated reduction of the well-ordered secondary structure of the enzyme. Increasing in the maximum fluorescence emission of anilinonaphthalene-8-sulfonic acid (ANS) was also revealing partial unfolding caused by the conformational changes in the tertiary structure of MT. Thermodynamic studies on the chemical denaturation of MT by dodecyl trimethylammonium bromide (DTAB) showed decrease in the stability of MT in the presence of $Cu ^{2+}$ or $Ni ^{2+}$ using their activation concentrations. Both activities of MT were also assessed in the presence of different concentrations of these ions, separately, with various monophenols and their corresponding diphenols. Kinetic studies revealed that cresolase activity on p-coumaric acid was boosted in the presence of either of the metal ions, but inhibited when phenol, L-tyrosine, or 4-[(4-methylphenyl)azo]-phenol was substrate. Similarly, catecholase activity on caffeic acid was enhanced in the presence of $Cu ^{2+}$ or $Ni ^{2+}$, but inhibited when catechol, L-DOPA, or 4-[(4-methylbenzo)azo]-1,2-benzenediol was substrate. Results of this study suggest that both cations make MT more fragile and less active. However, the effect of the substrate structure on the MT allosteric behavior can not be ignored.