• 전기화학회지
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• 제14권2호
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• pp.83-91
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• 2011

Mesoporous titanium dioxide ($TiO_2$) thin films were prepared using poly(vinyl chloride)-graft-poly(N-vinyl pyrrolidone) (PVC-g-PVP) as a templating agent via sol-gel process. Grafting of PVC chains from PVC backbone was done by atom transfer radical polymerization (ATRP) technique. The successful grafting of PVP to synthesize PVC-g-PVP was checked by fourier-transform infrared spectroscopy (FT-IR) and gel permeation chromatography (GPC). The carbonyl group interaction of PVC-g-PVP graft copolymer with $TiO_2$ was confirmed by FT-IR. The porous morphologies of the $TiO_2$ films genereated after calcination at $450^{\circ}C$ was characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The mesoporous $TiO_2$ films with 580 nm in thickness were used as a photoelectrode for solid state dye sensitized solar cell (DSSC) and showed an energy conversion efficiency of 1.05% at 100 $mW/cm^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1127-1130
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• 2003

The characteristics of silicon nitride films deposited in a planar coil reactor using a simple high-density inductively coupled plasma chemical vapor deposition technique have been investigated. The process gases used during silicon nitride deposition cycle were pure nitrogen and a mixture of silane and helium. It has been pointed out that the strong H-atom released from the growing SiN film and Si-N bond healing are responsible for the improved electrical and passivation properties of SiN.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.166.2-166.2
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• 2014

In this work, we demonstrated a facile and effective method for deposition of metal tetraphenylporphyrin (MTPP) thin film by a combined a thermal evaporation (TE) and atomic layer deposition (ALD). For the deposition of Zn-TPP thin film, Tetraphenylporphyrin (TPP) and diethyl zinc (DEZ) were used as organic and inorganic materials, respectively. Optimum conditions for the deposition of Zn-TPP thin film were established systematically: (1) the exposure time of DEZ as inorganic precursor and (2) the substrate temperature were adjusted, respectively. As a result, we verified that the surface reaction between organic semiconductor (TPP) and metal atom (Zn) was ALD process. In addition, we calculated activation energy by using Arrhenius equation for the substrate temperature versus area change rate of pyrrolic nitrogen. The surface and interface reactions between TPP with Zn were investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, UV-vis spectroscopy, and scanning electron microscopy. These results show a facile and well-controllable fabrication technique for the metal-organic thin film for future electronic applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.157-157
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• 2011

Graphene has generated significant interest in the recent years as a functional material for electronics, sensing, and energy applications due to its unique electrical, optical, and mechanical properties. Much of the considerable interest in graphene stems from results obtained for samples mechanically exfoliated from graphite. Practical applications, however, require reliable and well-controlled methods for fabrication of large area graphene films. Recently high quality graphene layers were fabricated using chemical vapor deposition (CVD) on nickel and copper with methane as the source of the carbon atoms. Here, we report a simple and efficient method to synthesize graphene layers using solid carbon source. Few-layer graphene films are grown using filtered vacuum arc source (FVAS) technique by evaporation of carbon atom on Ni catalytic metal and subsequent annealing of the samples at 800$^{\circ}$C. In our system, carbon atoms diffuse into the Ni metal layer at elevated temperatures followed by their segregation as graphene on the free surface during the cooling down step as the solubility of carbon in the metal decrease. For a given annealing condition and cooling rate, the number of graphene layers is easily controlled by changing the thickness of the initially evaporated amorphous carbon film. Based on the Raman analysis, the quality of graphene is comparable to other synthesis methods found in the literature, such as CVD and chemical methods.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.249-249
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• 2012

The interaction of hydrogen with ZnO single crystal surfaces, ZnO(0001) and ZnO(000-1), has been investigated using a temperature programmed desorption (TPD) technique. Both surfaces do not interact with molecular hydrogen. When the ZnO(0001) is exposed to atomic hydrogen at 370 K, hydrogen is adsorbed in the surface and desorption takes place at around 460 K and 700 K. In ZnO(000-1), the desorption peaks are observed at around 440 K and 540 K. In both surfaces, as the atomic hydrogen exposure is further increased, the intensity of the low-temperature peak reaches maximum but the intensity of the high-temperature peak keeps increasing. In ZnO(000-1), the existence of hydrogen bonding to the surface O atoms and the bulk hydrogen has been confirmed by using X-ray photoelectron spectroscopy (XPS). When the Zn(0001) surface is exposed to atomic hydrogen at around 200 K, a new $H_2$ desorption peak has been observed at around 250 K. The intensity of the desorption feature at 250 K is much greater than that of the desorption feature at 460 K. This low-temperature desorption feature indicates hydrogen is bonded to surface Zn atoms. We will report the effect of the ZnO structure on the adsorption and bulk diffusion of hydrogen.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.15-19
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• 2006

A pulsed laser ablation deposition (PLAD) technique is an excellent method for the fabrication of amorphous carbon (a-C) films, because it can generate highly energetic carbon clusters on a substrate. This paper was focused on the understanding and analysis of the motion of C particles in laser ablation assisted by Ar plasmas. The simulation has carried out under the pressure P=50 mTorr of Ar plasmas. Two-dimensional hybrid model consisting of fluid and Monte-Carlo models was developed and three kinds of the ablated particles which are carbon atom (C), ion ($C^+$) and electron were considered in the calculation of particle method. The motions of energetic $C^+$ and C deposited upon the substrate were investigated and compared. The interactions between the ablated particles and Ar gas plasmas were discussed.

• Bulletin of the Korean Chemical Society
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• 제34권11호
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• pp.3362-3366
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• 2013

A simple and quick separation technique for selenite in natural water was developed using $TiO_2$@$SiO_2/Fe_3O_4$ nanoparticles. For the synthesis of nanoparticles, a polymer-assisted sol-gel method using hydroxypropyl cellulose (HPC) was developed to control particle dispersion in the synthetic procedure. In addition, titanium butoxide (TBT) precursor, instead of the typical titanium tetra isopropoxide, was used for the formation of the $TiO_2$ shell. The synthesized nanoparticles were used to separate selenite ($Se^{4+}$) in the presence of $Se^{6+}$ or selenium anions for the photocatalytic reduction to $Se^0$ atom on the $TiO_2$ shell, followed by magnetic separation using $Fe_3O_4$ nanoparticles. The reduction efficiency of the photocatalytic reaction was 81.4% at a UV power of 6W for 3 h with a dark adsorption of 17.5% to the nanoparticles, as determined by inductively coupled plasma-mass spectrometry (ICP-MS). The developed separation method can be used for the speciation and preconcentration of selenium cations in environmental and biological analysis.

• 한국자기학회지
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• 제16권3호
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• pp.178-181
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• 2006

본 연구에선는 수직 Bridgman 법으로 묽은 자성 반도체 $Si_{1-x}Mn_xTe_{1.5} $ 단결정을 성장시켜 Mn의 조성비 변화에 따른 광학적, 전지적, 그리고 자기적 특성을 조사하였다. X-선 회절 실험으로부터 육방정계(hexagonal) 구조임을 확인하였다. 광흡수 측정으로부터 에너지 띠 간격은 조성비 x와 온도 증가에 대하여 감소함을 보였다. 성장시킨 시료의 경우 강자성 특성을 나타내었으며, Curie 온도는 80K 이상이었다. Mn의 조성비가 증가함에 따라 평균 자기 모멘트와 보자력 값은 증가하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2163-2165
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• 2005

A pulsed laser ablation deposition (PLAD) technique has been used for producing fine particle as well as thin film at relatively low substrate temperatures. However, in order to manufacture and evaluate such materials in detail, motions of plume particles generated by laser ablation have to be understood and interactions between the particles by ablation and gas plasma have to be clarified. Therefore, this paper was focused on the understanding of plume motion in laser ablation assisted by Ar plasma at 50(mTorr). Two-dimensional hybrid model consisting of fluid and particle models was developed and three kinds of plume particles which are carbon atom (C), ion $(C^+)$ and electron were considered in the calculation of particle method It was obtained that ablated $C^+$ was electrically captured in Ar plasmas by strong electric field (E). The difference between motions of the ablated electrons and $C^+$ made E strong and the collisional processes active.

• Bulletin of the Korean Chemical Society
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• 제22권7호
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• pp.703-708
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• 2001

K2NiF4-type organic-based perovskites of the (C4H9NH3)2FexPb1-xCl4 (x=0.00, 0.25, 0.50, and 0.75) system have been synthesized using a low-temperatu re solution method under a flowing argon gas. When stoichiometric butylamine, iron chloride, and lead chloride are mixed, a yellow solution are obtained from slow cooling of 90 to -10 $^{\circ}C.$ The final product is a plate-like yellow crystal. The X-ray crystallographic analysis has been carried out using XRD in the range of $5^{\circ}{\leq}$ 2${\theta}$ ${\leq}80^{\circ}.$ The local symmetry around the absorbing Pb atom of the samples has been determined by the EXAFS spectroscopic study. The crystals assign to orthorhombic system by the XRD analysis. The FT-IR spectra are analyzed in the range of 600 to 3300 cm-1 . DSC and TGA are measured to detect thermal stability between 30 and 300 $^{\circ}C.$ Two endothermic peaks are detected in all samples. The electrical conductivity has been measured using the four-probes technique for the (C4H9NH3)2FexPb1-xCl4 system in 300-460 K. Photoluminescence phenomenon was also investigated at room-temperature.