• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.2
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• pp.242-248
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• 1996

The properties of TiN/TiSi$_{2}$ bilayer formed by a rapid thermal annealing is investigated when thin SiO$_{2}$ film exists at the Ti-Si interface. The competitive reaction for the TiN/TiSi_2 bilayer occurs above 600 .deg. C. The thickness of the TiSi$_{2}$ layer decreases with increasing SiO$_{2}$ film thickness and also decreases with increasing anneal temperture When the competitive reaction for the TiN/TiSi$_{2}$ bilayer is occured by rapid thermal annealing, the composition of TiN layer represents TiN$_{x}$O$_{y}$ due to the SiO$_{2}$ layer at the Ti-Si interface but the structures of the TiN and TiSi$_{2}$ layers were not changed.d.d.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.124-128
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• 2000

Electrical properties of $ZrO_2-TiO_2Yb_2O_3$mixed conductor (Ti-YbSZ) were investigated. This mixed conductor can be applied as a membrane for gas separation at high temperatures. The total conductivity decreased with increasing the $TiO_2$concentration. At high temperatures, the rate of the conductivity degradation became smaller than that at low temperatures. From the oxygen partial pressure dependence of the total conductivity of Ti-YbSZ, the electronic conductivity increased with increasing $TiO_2$concentration at low oxygen partial pressures and at high temperatures. Both 15 and 20 mol% $TiO_2$doped YbSZ showed high oxygen permeability. Mixed conductors, which has high $TiO_2$concentration in YbSZ, are promising materials for using as a membrane for gas separation at high temperatures.

• Korean Journal of Materials Research
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• v.18 no.1
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• pp.51-56
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• 2008

The crystal structures and morphologies of precipitates in $L1_0$-ordered TiAl intermetallics containing nitrogen were investigated by transmission electron microscopy (TEM). Under aging at an approximate temperature of 1073 K after quenching from 1423 K, TiAl hardens appreciably due to the nitride precipitation. TEM observations revealed that needle-like precipitates, which lie only in one direction parallel to the [001] axis of the $L1_0$-TiAl matrix, appear in the matrix preferentially at the dislocations. Selected area electron diffraction (SAED) pattern analyses showed that the needle-shaped precipitate is perovskite-type $Ti_3AlN$ (P-phase). The orientation relationship between the P-phase and the $L1_0$-TiAl matrix was found to be $(001)_P//(001)_{TiAl}\;and\;[010]_P//[010]_{TiAl}$. By aging at higher temperatures or for longer periods at 1073 K, plate-like precipitates of $Ti_2AlN$ (H-phase) with a hexagonal structure formed on the {111} planes of the $L1_0$-TiAl matrix. The orientation relationship between the $Ti_2AlN$ and the $L1_0$-TiAl matrix is $(0001)_H//(111)_{TiAl}\;and\;_H//_{TiAl}$.

• Korean Journal of Materials Research
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• v.31 no.2
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• pp.97-100
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• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.87-95
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• 1995

The effect of stuffing of TiN on the diffusion barrier property between A1 and Si was investigated. The stuffing of TiN was performed by annealing in a Nz ambient at $450^{\circ}C$ for 30min. By TEM analysis, it is identified that there are solid-free or open spaces of a b u t 10-20$\AA$ between the grains of asdeposited TiN. In the case of stuffed TiN, the width of solid-free or open spaces has been reduced to about 10$\AA$ or below. The combination of RBS and AES analyses showed that the asdeposited TiN had about 7at.% of oxygen, and that the stuffed TiN had about 10-15at.% of oxygen. The diffusion barrier test result shows that after annealing at $650^{\circ}C$ for lhour, the asdeposited TiN fails due to the formation of A1 spikes and Si pits in the Si substrate. However, in the case of stuffed TiN, there is no indication of Al spikes and Si pits at the same annealing condition. Thus, it is concluded that this stuffing of TiN significantly improves the diffusion barrier property of TiN between A1 and Si. It is considered that the stuffing effect results from the reduced diffusion through grain boundaries due to the reduced spacing of grain boundaries.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1130-1140
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• 1998

Thin films of $Bi_4Ti_3O_{12}\;nBaTiO_3(n=1&2)$ were prepared using sols erived Ba-Bi-Ti complex alkoxides. The sols were spin-cast onto $Pt/Ti/SiO_2/Si$ substrates and followed by pyrolysis for 1 hr at $620^{\circ}C,\;700^{\circ}C\;and\;750^{\circ}C$ In the thin films a pyrochlore phase seemed to be formed at a lower temperature and then tran-formed to the layered perovskite phase as the heating temperature increased. In the thin films pyrolyzed at formed to the layered perovskte phase as the heating temperature increased. In the films pyrolyzed at $750^{\circ}C$ the amount of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ reached to 94% while $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ was 77% in composition. This result shows that the formation of the layered pervoskite phase becomes difficult as the amount of complexing $BaTiO_3$ increases. The microstructures and the electrical properties of the thin films were gen-erally improved with the incease of the heating temperature. However the presence of the pyrochlore phase could not be removed effectively. Our study showed that the electrical properties of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ were pronouncedly improved with complexing with BaTiO3 when compared to those of $Bi_4Ti_3O_{12}$ while the presence of the pyrochlore phase was detrimental to the those of $Bi_4Ti_3O_{12}{\cdot}2BaTiO_3$.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.96-101
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• 2000

Comparative studies on microstructure, and mechanical and anti-oxidation properties between TiN and Ti-Si-N films were performed. The Ti-Si-N films were deposited on high-speed steel and silicon wafer substrates by plasma-assisted chemcial vapor deposition(PACVD) technique. The Si addition to TiN film caused to change the microstructure such as grain size refinement, randomly multi-oriented microstructure, and nano-sized codeposition of silicon nitride in the TiN matrix. The Ti-Si-N film, contains Si content of ∼7 at.%, showed the micro-hardness value of ∼3400 HK, which was higher than the pure TiN film whose hardness was ∼1500HK. The Ti-Si(7 at.%)-N film also showed much improved anti-oxidation properties compared with those of the pure TiN film. These properties were also related to the microstructure of Ti-Si(7 at.%)-N film was formed and retarded further oxidation of the nitridelayer. These properties were also related to the microstructure of Ti-Si(7 at.%)-N film which was characterized by nano-sized precipitates of silicon nitride phase in the TiN matrix and randomly oriented grains.

• Proceedings of the KWS Conference
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• 2004.05a
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• pp.45-47
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• 2004

We have investigated the microstructures and the mechanical properties of TiA1/Cerameti1721 (Ag-Cu-Ti insert metal)/AISI4140 joints at 800$^{\circ}C$ for 60 to 300s using induction brazing method. Two continuous reaction layers of AICuTi and AICu$_2$Ti were formed at the interface between the braze and TiAl, whose thickness increased with the brazing time. The braze consisted of Ag-rich, Ti-rich, CuTi and CuTi$_2$ phases. The maximum tensile strength achieved 296MPa, which was 71% of that of TiAl base metal, for the specimen bonded at 800$^{\circ}C$. Further increase of the brazing temperature and time resulted in constant deterioration of its bonding strength due to large amount of brittle IMC.

• Applied Microscopy
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• v.29 no.2
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• pp.255-263
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• 1999

We have investigated the interfacial reactions in Co/Ti multilayer thin films prepared by DC Magnetron sputtering system. We observed that the amorphous Co-Ti phase formed by SSAR (Solid State Amorphization Reaction) upon annealing at $200^{\circ}C$. Upon annealing treatments at $300^{\circ}C\;and\;400^{\circ}C$, a crystalline phase of CoTi formed at the Co/Ti interface. The sheet resistance of Co/Ti multilayer thin film increased by the formation of the amorphous phase at the Co/Ti interface, which decreased by the formation of new crystalline compound CoTi.

• Journal of the Korean institute of surface engineering
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• v.34 no.2
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• pp.135-141
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• 2001

Arc-melted Ti-6Al-4V, Ti-4Fe and Ti-(1,2) Si alloys were oxidized at 700, 800, 900 and $1000^{\circ}C$ in air. The oxidation resistance of Ti-4Fe was comparable to that of Ti-6Al-4V, while the oxidation resistance of Ti-(1,2) Si was superior to that of Ti-6Al-4V. Ti-2Si displayed the best oxidation resistance among the four alloys, but failed after oxidation at $1000^{\circ}C$ for 17h. The oxide scale formed on Ti-6Al-4V, Ti-4Fe and Ti-(1,2)Si consisted of ($TiO_2$ and a small amount of $Al_2$$O_3$), ($TiO_2$ and a small amount of dissolved iron), and ($TiO_2$ plus a small concentration of amorphous $SiO_2$), respectively. The oxide grains of the surface scale of the four alloys were generally fine and round.