• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1996.03a
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• pp.24-29
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• 1996

The seniconductor, which is precision product, requires many inspection processes. The surface conditions of the semiconductor chip effect on the functions of the semiconductors. The defects of the chip surface is crack or void. Because general inspection method requires many inspection processes, the inspection system which searches immediately and preciselythe defects of the semiconductor chip surface. We propose the inspection method by using the computer vision system. This study presents an image processing algorithm for inspecting the surface defects(crack, void)of the semiconductor test samples. The proposed image processing algorithm aims to reduce inspection time, and to analyze those experienced operator. This paper regards the chip surface as random texture, and deals with the image modeling of randon texture image for searching the surface defects. For texture modeling, we consider the relation of a pixel and neighborhood pixels as noncasul model and extract the statistical characteristics from the radom texture field by using the 2D AR model(Aut oregressive). This paper regards on image as the output of linear system, and considers the fidelity or intelligibility criteria for measuring the quality of an image or the performance of the processing techinque. This study utilizes the variance of prediction error which is computed by substituting the gary level of pixel of another texture field into the two dimensional AR(autoregressive model)model fitted to the texture field, estimate the parameter us-ing the PAA(parameter adaptation algorithm) and design the defect detection filter. Later, we next try to study the defect detection search algorithm.

• Journal of the Korean Society of Safety
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• v.20 no.3 s.71
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• pp.9-13
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• 2005

Inconel 625 is useful in variety of industrial applications because of the resistance to attack on various corrosive media at temperature from $200^{\circ}C$ to over $1090^{\circ}C$, in combination with good low and high temperature mechanical strength. Recently, this material is also used widely in offshore processing piping in order to extend the maintenance term and improvement the quality of anti-corrosion. In general, high quality weldments for this material are readily produced by commonly used processes. Not all processes are applicable to this material group, Ni-alloys. Metallurgical characteristics or the unavailability of matching, position or suitable welding process. Nowadays, the flux cored wire is developed and applied for the better productivity in several welding position including the vertical position. In this study, the weldability and weldment characteristics(mechanical properties) of inconel 625 are considered in FCAW(Flux Cored Arc Welding) associated with the severial shielding gases($80%Ar+20%CO_2,\;50%Ar+50%CO_2,\;100%CO_2$) in viewpoint of welding productivity.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.27 no.3
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• pp.144-157
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• 2022

Noble gases, which are chemically inert and behave conservatively in marine environments, have been used as tracers of physical processes such as air-sea gas exchange, mixing of water masses, and distribution of glacial meltwater in the ocean. For precise measurements of Ne, Ar, and Kr, we developed a mass spectrometric system consisting of a quadrupole mass spectrometer (QMS), a high vacuum preparation line, an activated charcoal cryogenic trap (ACC), and a set of isotope standard gases. The high vacuum line consists of three sections: (1) a sample extraction section that extracts the dissolved gases in the sample and mixes them with the standard gases, (2) a gas preparation section that removes reactive gases using getters and separates the noble gases according to their evaporation points with the ACC, and (3) a gas analysis section that measures concentrations of each noble gas. The ACC attached to the gas preparation section markedly lowered the partial pressures of Ar and CO₂ in the QMS, which resulted in a reduced uncertainty of Ne isotope analysis. The isotope standard gases were prepared by mixing ²²Ne, ³⁶Ar, and ⁸⁶Kr. The amounts of each element in the mixed standard gases were determined by the reverse isotope dilution method with repeated measurements of the atmosphere. The analytical system achieved precisions for Ne, Ar, and Kr concentrations of 0.7%, 0.7%, and 0.4%, respectively. The accuracies confirmed by the analyses of air-equilibrated water were 0.5%, 1.0%, and 1.7% for Ne, Ar, and Kr, respectively.

• Journal of the Korean Statistical Society
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• v.26 no.1
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• pp.31-46
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• 1997

Let $X_{t}$ = .beta. $X_{{t-1}}$ + .epsilon.$_{t}$ be an autoregressive process where $\mid$.beta.$\mid$ < 1 and {.epsilon.$_{t}$} is independent and identically distriubted with regularly varying tail probabilities. This process is called the asymptotically stationary first-order autoregressive process (AR(1)) with infinite variance. In this paper, we obtain a host of weak convergences of some point processes based on bootstrapping of { $X_{t}$}. These kinds of results can be generalized under the infinite variance assumption to ensure the asymptotic validity of the bootstrap method for various functionals of { $X_{t}$} such as partial sums, sample covariance and sample correlation functions, etc.ions, etc.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.3
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• pp.312-320
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• 1990

Analysis and lattice implementation of Extended Instrumental Variable (EIV) methods for high resolution spectral analysis are presented. The performance of EIV is improved by using prefilters and the unbiasness of EIV is proved by using the fact that residual processes are white. We derive the order and time update formulas for the covariance lattice algorithm which is particularly useful in case of short data or nonstationary processes. The ARMA model can be modeled as two channel AR processes. Using this model, the lattice algorithms of EIV are derived. Computer simulations are performed to show the usefulness of the proposed algorithms.

• The Journal of Engineering Geology
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• v.8 no.2
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• pp.175-188
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• 1998

This paper describes the internal structures and K-Ar ages of fault gouges collected from the Dongnae fault zone. This fault zone is internally zoned and occurs in the multiple fault cores. A fault core consists of thin gouge and narrow cataclastic zones that are bounded by a much thicker damage zone. Intensity of deformation and alteration increases from damage zone through cataclastic zone to gouge zone. It is thought that cataclasis of brittle deformation was the dominant strain-accomodation mechanism in the early stage of deformation to form the gouge zone and that crushed materials in the regions of maximum localization of fault slip subsequently moved by cataclastic flow. Deformation mechanism drastically changed from brittle processes to fluid-assisted flow along the gouge zone as the high porosity and permeability of pulverzied materials during faulting facilitated the influx of the hydrothermal fluids. Subsequently, the fluids reacted with gouge materials to form clay minerals. Fracturing and alteration could have repeatedly taken place in the gouge zone by elevated fluid pressures generated from the reduction of pore volume due to the formation of clay minerals and precipitation of other materials. XRD analysis revealed that the most common clay minerals of the gouge zones are illite and smectite with minor zeolite and kaolinite. Most of illites are composed of 1Md polytype, indicating the products of hydrothermal alteration. The major activities of the Dongnae fault can be divided into two periods based upon K-Ar age data of the fault gouges : 51.4∼57.5Ma and 40.3∼43.6Ma. Judging from the enviromental condition of clay mineral formation, it is inferred that the hydrothermal alteration of older period occured at higher temperature than that of younger period.

• The Plant Pathology Journal
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• v.28 no.3
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• pp.259-269
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• 2012

Protein phosphatase 2A (PP2A), a family of serine/threonine protein phosphatases, plays an important role in balancing the phosphorylation status of cellular proteins for regulating diverse biological functions in eukaryotic organisms. Despite intensive studies in mammals, limited information on its role is available in filamentous fungi. Here, we investigated the functional roles of genes for a putative B' delta regulatory subunit (FgPP2AR) and a catalytic subunit (FgPP2AC) of PP2A in a filamentous ascomycete, Fusarium graminearum. Molecular characterization of an insertional mutant of this plant pathogenic fungus allowed us to identify the roles of FgPP2AR. Targeted gene replacement and complementation analyses demonstrated that the deletion of FgPP2AR, which was constitutively expressed in all growth stages, caused drastic changes in hyphal growth, conidia morphology/germination, gene expression for mycotoxin production, sexual development and pathogenicity. In particular, overproduction of aberrant cylindrical-shaped conidia is suggestive of arthroconidial induction in the ${\Delta}FgPP2AR$ strain, which has never been described in F. graminearum. In contrast, the ${\Delta}FgPP2AC$ strain was not significantly different from its wild-type progenitor in conidiation, trichothecene gene expression, and pathogenicity; however, it showed reduced hyphal growth and no perithecial formation. The double-deletion ${\Delta}FgPP2AR;{\Delta}FgPP2AC$ strain had more severe defects than single-deletion strains in all examined phenotypes. Taken together, our results indicate that both the putative regulatory and catalytic subunits of PP2A are involved in various cellular processes for fungal development in F. graminearum.

• Electronics and Telecommunications Trends
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• v.35 no.4
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• pp.1-10
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• 2020

Since the 1960s, semiconductor packaging technology has developed into electrical joining techniques using lead frames or C4 bumps using tin-lead solder compositions based on traditional reflow processes. To meet the demands of a highly integrated semiconductor device, high reliability, high productivity, and an eco-friendly simplified process, packaging technology was required to use new materials and processes such as lead-free solder, epoxy-based non cleaning interconnection material, and laser based high-speed processes. For next generation semiconductor packaging, the study status of two epoxy-based interconnection materials such as fluxing and hybrid underfills along with a laser-assisted bonding process were introduced for fine pitch semiconductor applications. The fluxing underfill is a solvent-free and non-washing epoxy-based material, which combines the underfill role and fluxing function of the Surface Mounting Technology (SMT) process. The hybrid underfill is a mixture of the above fluxing underfill and lead-free solder powder. For low-heat-resistant substrate applications such as polyethylene terephthalate (PET) and high productivity, laser-assisted bonding technology is introduced with two epoxy-based underfill materials. Fluxing and hybrid underfills as next-generation semiconductor packaging materials along with laser-assisted bonding as a new process are expected to play an active role in next-generation large displays and Augmented Reality (AR) and Virtual Reality (VR) markets.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.281-289
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• 2004

The temperature hump is found to be most efficient in suppressing parasitic nucleation. With the temperature humps, there are found to be observed in undersaturations along the transport path for convective-diffusive processes ranging from $D_{AB}$ = 0.0584 $\textrm{cm}^2$/s to 0.584 $\textrm{cm}^2$/s, axial positions from 0 to 7.5 cm. With decreasing Ar = 5 to 3.5, the temperature difference is increased because of the imposed nonlinear temperature profile but the rate is decreased. For 2 $\leq$ Ar $\leq$ 3.5, the rate is increased with the aspect ratio as well as the temperature difference. Such an occurrence of a critical aspect ratio is likely to be due to the effect of sidewall and much small temperature difference. The rate is decreased exponentially with the aspect ratio for 2 $\leq$ Ar $\leq$ 10. Also, the rate is exponentially decreased with partial pressure of component B, P for 1 $\leq$ P $\leq$ 100 Torr.$ B/ $\leq$ 100 Torr.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.4
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• pp.149-156
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• 2006

For an aspect ratio (transport length-to-width) of 5, Pr = 2.89, Le = 0.018, Pe = 2.29, Cv = 1.11, $P_B$=40 Torr, solutally buoyancy-driven convection $(Gr_s=3.03{\times}10^5)$ due to the disparity in the molecular weights of the component A $(Hg_2Cl_2)$ and B (He) is stronger than thermally buoyancy-driven convection $(Cr_t=1.66{\times}10^4)$. The crystal growth rate is decreased exponentially for $2.5\;{\leq}\;Ar\;{\leq}\;5$, with (1) the linear temperature profile and a fixed temperature difference, (2) the imposed thermal profile, a fixed crystal region and varied temperature difference. This is related to the finding that the effects of side walls tend to stabilize convection in the growth reactor. But, with the imposed thermal profile, a fixed source region and varied temperature difference, the rate is increased far $2\;{\leq}\;Ar\;{\leq}\;3$, and remains nearly unchanged for $3\;{\leq}\;Ar\;{\leq}\;5$.