• 한국공작기계학회:학술대회논문집
• /
• 한국공작기계학회 1996년도 춘계학술대회 논문집
• /
• pp.24-29
• /
• 1996

The seniconductor, which is precision product, requires many inspection processes. The surface conditions of the semiconductor chip effect on the functions of the semiconductors. The defects of the chip surface is crack or void. Because general inspection method requires many inspection processes, the inspection system which searches immediately and preciselythe defects of the semiconductor chip surface. We propose the inspection method by using the computer vision system. This study presents an image processing algorithm for inspecting the surface defects(crack, void)of the semiconductor test samples. The proposed image processing algorithm aims to reduce inspection time, and to analyze those experienced operator. This paper regards the chip surface as random texture, and deals with the image modeling of randon texture image for searching the surface defects. For texture modeling, we consider the relation of a pixel and neighborhood pixels as noncasul model and extract the statistical characteristics from the radom texture field by using the 2D AR model(Aut oregressive). This paper regards on image as the output of linear system, and considers the fidelity or intelligibility criteria for measuring the quality of an image or the performance of the processing techinque. This study utilizes the variance of prediction error which is computed by substituting the gary level of pixel of another texture field into the two dimensional AR(autoregressive model)model fitted to the texture field, estimate the parameter us-ing the PAA(parameter adaptation algorithm) and design the defect detection filter. Later, we next try to study the defect detection search algorithm.

• 한국안전학회지
• /
• 제20권3호
• /
• pp.9-13
• /
• 2005

Inconel 625 is useful in variety of industrial applications because of the resistance to attack on various corrosive media at temperature from $200^{\circ}C$ to over $1090^{\circ}C$, in combination with good low and high temperature mechanical strength. Recently, this material is also used widely in offshore processing piping in order to extend the maintenance term and improvement the quality of anti-corrosion. In general, high quality weldments for this material are readily produced by commonly used processes. Not all processes are applicable to this material group, Ni-alloys. Metallurgical characteristics or the unavailability of matching, position or suitable welding process. Nowadays, the flux cored wire is developed and applied for the better productivity in several welding position including the vertical position. In this study, the weldability and weldment characteristics(mechanical properties) of inconel 625 are considered in FCAW(Flux Cored Arc Welding) associated with the severial shielding gases($80%Ar+20%CO_2,\;50%Ar+50%CO_2,\;100%CO_2$) in viewpoint of welding productivity.

• 한국해양학회지:바다
• /
• 제27권3호
• /
• pp.144-157
• /
• 2022

비활성기체는 화학적, 생물학적 반응을 하지 않는 보존적인 특성을 가지고 있어 해양에서 수온과 염분 변화, 기체 주입, 해수의 혼합과 빙하 융해수의 분포와 같은 물리적인 변화의 추적자로 활용되고 있다. Ne, Ar과 Kr을 정밀하게 분석하기 위해 사중극자 질량 분석기, 고진공 전처리 라인, 초저온 냉각 트랩과 동위원소 표준기체로 구성된 분석 시스템을 제작했다. 고진공 라인은 시료의 용존 기체를 추출하여 동위원소 표준기체와 혼합하는 시료추출부, 합금 물질을 이용하여 반응성 기체를 제거하고 초저온 냉각 트랩으로 비활성기체를 기화점에 따라 분별 증류하는 기체 준비부, 비활성기체를 원소별로 측정하는 기체 측정부로 구성하였다. 기체준비부에 결합한 초저온 냉각 트랩은 질량분석기 내 Ar와 CO₂의 부분압을 현저히 낮추어 Ne 동위원소 분석의 오차를 감소시켰다. 동위원소 표준기체는 ²²Ne, ³⁶Ar과 ⁸⁶Kr를 혼합하여 제작하였고, 혼합 표준 기체의 원소별 양은 대기를 반복 측정하여 역동위원소 희석법으로 결정했다. 대기 평형수 반복 분석의 상대 오차는 Ne, Ar과 Kr에 대해 각각 0.7%, 0.7%, 0.4%이었다. 반복 측정한 대기 평형수의 농도와 포화 농도의 차이로 확인한 분석시스템의 정확도는 Ne, Ar, Kr에 대해 각각 0.5%, 1.0%, 1.7%이었다.

• Journal of the Korean Statistical Society
• /
• 제26권1호
• /
• pp.31-46
• /
• 1997

Let $X_{t}$ = .beta. $X_{{t-1}}$ + .epsilon.$_{t}$ be an autoregressive process where $\mid$.beta.$\mid$ < 1 and {.epsilon.$_{t}$} is independent and identically distriubted with regularly varying tail probabilities. This process is called the asymptotically stationary first-order autoregressive process (AR(1)) with infinite variance. In this paper, we obtain a host of weak convergences of some point processes based on bootstrapping of { $X_{t}$}. These kinds of results can be generalized under the infinite variance assumption to ensure the asymptotic validity of the bootstrap method for various functionals of { $X_{t}$} such as partial sums, sample covariance and sample correlation functions, etc.ions, etc.

• 대한전기학회논문지
• /
• 제39권3호
• /
• pp.312-320
• /
• 1990

Analysis and lattice implementation of Extended Instrumental Variable (EIV) methods for high resolution spectral analysis are presented. The performance of EIV is improved by using prefilters and the unbiasness of EIV is proved by using the fact that residual processes are white. We derive the order and time update formulas for the covariance lattice algorithm which is particularly useful in case of short data or nonstationary processes. The ARMA model can be modeled as two channel AR processes. Using this model, the lattice algorithms of EIV are derived. Computer simulations are performed to show the usefulness of the proposed algorithms.

• 지질공학
• /
• 제8권2호
• /
• pp.175-188
• /
• 1998

선형계곡을 따라 발달하는 동래 단층대의 단층비지를 조사 연구하였다. 이 단층대는 내적으로 대상구조를 가지며 다중 단층핵의 형태로 산출된다. 단층핵은 비지대와 파쇄대로 구분되며 단층대의 최외곽부인 손상대에 의해 둘러싸인다. 변형작용과 변질작용의 강도는 모암으로부터 손상대 $\rightarrow}$ 파쇄대$\rightarrow}$ 비지대를 향해 증가한다. 비지대를 형성한 변형작용은 초기엔 취성변형작용의 파쇄작용(catalasis)이 주도적이었고, 단층슬립의 최대의 국지화 지역인 파쇄물질의 고변형지역(비지대)에서는 연속적인 취성단열작용의 파쇄유동으로 나아갔을 것으로 생각된다. 단층비지대의 분쇄물질의 높은 공극 및 투수성은 지하로부터 열수유체의 유입을 가능케하여 활발한 열수 변질작용이 일어남에 따라 변형작용 기구는 취성파괴로부터 유체도움 유동으로 일대변화를 겪게 되었다. 열수 유체에 의한 일라이트, 스멕타이트 등의 점토광물 생성과 철광물 및 기타원소의 침전은 단층비지대에 높은 유압을 발생시켜 단열작용과 변질작용을 반복적으로 발생시킬수 있다. 일라이트의 다형은 대부분 1Md형으로 구성된다. 암석이 분쇄되고 나서 변질작용으로 점토광물이 생성될 때까지의 시간은 매우 짧은 것으로 알려져 있다. K-Ar 연령 측정자료에 의할때 열수변질을 수반한 동래단층의 주요 단층활동 시기는 51.4~57.5Ma와 40.3~43.6Ma의 두 시기로 구분될 수 있으나 시.공간적 단층활동 형태를 구명하기 위해서는 더 많은 자료가 필요하다. 그리고 비지대 점토광물의 생성온도환경으로 판단할 때 고기운동의 열수변질이 신기운동에 비해 보다 고온에서 일어난 것으로 추정된다.

• The Plant Pathology Journal
• /
• 제28권3호
• /
• pp.259-269
• /
• 2012

Protein phosphatase 2A (PP2A), a family of serine/threonine protein phosphatases, plays an important role in balancing the phosphorylation status of cellular proteins for regulating diverse biological functions in eukaryotic organisms. Despite intensive studies in mammals, limited information on its role is available in filamentous fungi. Here, we investigated the functional roles of genes for a putative B' delta regulatory subunit (FgPP2AR) and a catalytic subunit (FgPP2AC) of PP2A in a filamentous ascomycete, Fusarium graminearum. Molecular characterization of an insertional mutant of this plant pathogenic fungus allowed us to identify the roles of FgPP2AR. Targeted gene replacement and complementation analyses demonstrated that the deletion of FgPP2AR, which was constitutively expressed in all growth stages, caused drastic changes in hyphal growth, conidia morphology/germination, gene expression for mycotoxin production, sexual development and pathogenicity. In particular, overproduction of aberrant cylindrical-shaped conidia is suggestive of arthroconidial induction in the ${\Delta}FgPP2AR$ strain, which has never been described in F. graminearum. In contrast, the ${\Delta}FgPP2AC$ strain was not significantly different from its wild-type progenitor in conidiation, trichothecene gene expression, and pathogenicity; however, it showed reduced hyphal growth and no perithecial formation. The double-deletion ${\Delta}FgPP2AR;{\Delta}FgPP2AC$ strain had more severe defects than single-deletion strains in all examined phenotypes. Taken together, our results indicate that both the putative regulatory and catalytic subunits of PP2A are involved in various cellular processes for fungal development in F. graminearum.

• 전자통신동향분석
• /
• 제35권4호
• /
• pp.1-10
• /
• 2020

Since the 1960s, semiconductor packaging technology has developed into electrical joining techniques using lead frames or C4 bumps using tin-lead solder compositions based on traditional reflow processes. To meet the demands of a highly integrated semiconductor device, high reliability, high productivity, and an eco-friendly simplified process, packaging technology was required to use new materials and processes such as lead-free solder, epoxy-based non cleaning interconnection material, and laser based high-speed processes. For next generation semiconductor packaging, the study status of two epoxy-based interconnection materials such as fluxing and hybrid underfills along with a laser-assisted bonding process were introduced for fine pitch semiconductor applications. The fluxing underfill is a solvent-free and non-washing epoxy-based material, which combines the underfill role and fluxing function of the Surface Mounting Technology (SMT) process. The hybrid underfill is a mixture of the above fluxing underfill and lead-free solder powder. For low-heat-resistant substrate applications such as polyethylene terephthalate (PET) and high productivity, laser-assisted bonding technology is introduced with two epoxy-based underfill materials. Fluxing and hybrid underfills as next-generation semiconductor packaging materials along with laser-assisted bonding as a new process are expected to play an active role in next-generation large displays and Augmented Reality (AR) and Virtual Reality (VR) markets.

• 한국결정성장학회지
• /
• 제14권6호
• /
• pp.281-289
• /
• 2004

The temperature hump is found to be most efficient in suppressing parasitic nucleation. With the temperature humps, there are found to be observed in undersaturations along the transport path for convective-diffusive processes ranging from $D_{AB}$ = 0.0584 $\textrm{cm}^2$/s to 0.584 $\textrm{cm}^2$/s, axial positions from 0 to 7.5 cm. With decreasing Ar = 5 to 3.5, the temperature difference is increased because of the imposed nonlinear temperature profile but the rate is decreased. For 2 $\leq$ Ar $\leq$ 3.5, the rate is increased with the aspect ratio as well as the temperature difference. Such an occurrence of a critical aspect ratio is likely to be due to the effect of sidewall and much small temperature difference. The rate is decreased exponentially with the aspect ratio for 2 $\leq$ Ar $\leq$ 10. Also, the rate is exponentially decreased with partial pressure of component B, P for 1 $\leq$ P $\leq$ 100 Torr.$ B/ $\leq$ 100 Torr.

• 한국결정성장학회지
• /
• 제16권4호
• /
• pp.149-156
• /
• 2006

For an aspect ratio (transport length-to-width) of 5, Pr = 2.89, Le = 0.018, Pe = 2.29, Cv = 1.11, $P_B$=40 Torr, solutally buoyancy-driven convection $(Gr_s=3.03{\times}10^5)$ due to the disparity in the molecular weights of the component A $(Hg_2Cl_2)$ and B (He) is stronger than thermally buoyancy-driven convection $(Cr_t=1.66{\times}10^4)$. The crystal growth rate is decreased exponentially for $2.5\;{\leq}\;Ar\;{\leq}\;5$, with (1) the linear temperature profile and a fixed temperature difference, (2) the imposed thermal profile, a fixed crystal region and varied temperature difference. This is related to the finding that the effects of side walls tend to stabilize convection in the growth reactor. But, with the imposed thermal profile, a fixed source region and varied temperature difference, the rate is increased far $2\;{\leq}\;Ar\;{\leq}\;3$, and remains nearly unchanged for $3\;{\leq}\;Ar\;{\leq}\;5$.