• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.284-284
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• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.2
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• pp.49-54
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• 2013

Recently welding of aluminum material is actively carried out to make lightweight in the fields of LNG vessels, aircraft, chemical plants, etc. To obtain high strength, hardness and elongation, elements such as manganese, zinc, silicon, etc should be added in aluminum alloy, which has been improved on the mechanical properties like precipitation hardening, age hardening, loosening, corrosion resistance acid resistance. Ar gas is used as a shielding gas of MIG welding for aluminum, also $N_2$, $O_2$, $CO_2$, $H_2$ etc can be added depending on the composition of the alloy. In this study, Ar + $O_2$, Ar, and He were used for welding, hardness, penetration status and changes in composition of penetrated parts were compared and analyzed. This made it possible to know the status and changes of the process in the penetrated parts depending on used gas throughout this study.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1333-1334
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• 2007

Al thin film was the most popular electrode in semiconductor and flat panel display world, because of its electrical conductivity, selectivity and easy to apply to thin film. However, Al thin films were not good to use on the bottom electrode about the crystalline growth of inorganic compound materials such as ZnO, AlN and GaN, because of its surface roughness and melting points. In this paper, we investigated Ar plasma surface treatment of Al thin film to enhance the surface roughness and electrical conductivity using the reactive ion etching system. Several process conditions such as RF power, working pressure and process time were controlled. In results, the surface roughness showed $15.53\;{\AA}$ when RF power was 100 W, working pressure was 50 mTorr and process time was 10 min. Also, we tried to deposit ZnO thin films on the each Al thin films, the upper conditions showed the best crystalline characteristics by x-ray diffraction.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.67-70
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• 2013

In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.

• Communications for Statistical Applications and Methods
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• v.30 no.2
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• pp.163-178
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• 2023

GARCH-X(1, 1) model specifies that conditional variance follows an AR(1) process and includes a past exogenous variable. This study proposes a new class from that model by allowing a more general (non-linear) variance function to follow an AR(1) process. The functions applied to the variance equation include exponential, Tukey's ladder, and Yeo-Johnson transformations. In the framework of normal and student-t distributions for return errors, the empirical analysis focuses on two stock indices data in developed countries (FTSE100 and SP500) over the daily period from January 2000 to December 2020. This study uses 10-minute realized volatility as the exogenous component. The parameters of considered models are estimated using the adaptive random walk metropolis method in the Monte Carlo Markov chain algorithm and implemented in the Matlab program. The 95% highest posterior density intervals show that the three transformations are significant for the GARCHX(1, 1) model. In general, based on the Akaike information criterion, the GARCH-X(1, 1) model that has return errors with student-t distribution and variance transformed by Tukey's ladder function provides the best data fit. In forecasting value-at-risk with the 95% confidence level, the Christoffersen's independence test suggest that non-linear models is the most suitable for modeling return data, especially model with the Tukey's ladder transformation.

• Applied Chemistry for Engineering
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• v.25 no.4
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• pp.430-436
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• 2014

Allura Red (AR) is a water-soluble harmful tar-based food colorant (FD & C Red 40). Batch adsorption studies were performed for the removal of AR using bituminous coal based granular activated carbon as adsorbent by varying the operation parameters such as adsorbent dosage, initial concentration, contact time and temperature. Experimental equilibrium adsorption data were analyzed by Langmuir, Freundlich and Temkin isotherms. The equilibrium process was described well by Freundlich isotherm. From determined separation factor ($R_L$), adsorption of AR by granular activated carbon could be employed as effective treatment method. Temkin parameter, B was determined to 1.62~3.288 J/mol indicating a physical adsorption process. By estimation of adsorption rate experimental data, the value of intraparticle diffusion rate constant ($k_m$) increased with the increasing adsorption temperature. The adsorption process were found to confirm to the pseudo second order model with good correlation. Thermodynamic parameters like change of free energy, enthalpy, and entropy were also calculated to predict the nature adsorption in the temperature range of 298~318 K. The negative Gibbs free energy change (${\Delta}G$ = -2.16~-6.55 kJ/mol) and the positive enthalpy change (${\Delta}H$ = + 23.29 kJ/mol) indicated the spontaneous and endothermic nature of the adsorption process, respectively.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.24 no.67
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• pp.27-36
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• 2001

A standard assumption when using a control chart to monitor a process is that the observations from the process output are statistically independent. However, for many processes the observations are autocorrelated and this autocorrelation can have a significant effect on the performance of the control chart. In this paper, we consider combined control chart of monitoring the mean of a process in which the observations can be modeled as a first-order autoregressive process. The Shewhart control chart of residuals-EWMA control chart of the observations is considered and the method of combination is recommended. The performance of the proposed control chart is compared with the performance of other control charts using a simulation.

• Polymer(Korea)
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• v.34 no.5
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• pp.454-458
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• 2010

In this study, the microstructural changes in orthopaedic-grade ultra high molecular weight polyethylene (UHMWPE) were compartively investigated for six different gamma-irradiation methods. Compared with un-irradiation (UGI), conventional gamma-irradiation in air room temperature (AR) induced statistically significant increases of relative crystallinity and percent crosslinking in UHMWPE. Vacuum environment (VR) during gamma-irradiation significantly increased the percent crosslinking in UHMWPE. Vacuum extreme low temperature (V77) during gamma-irradiation induced no significant changes in both relative crystallinity and percent crosslinking of UHMWPE but the percent crosslinking of UHMWPE in VR and V77 was significantly larger than that in AR. Post-irradiation stabilization process significantly increased the relative crystallinity of UHMWPE in V77, and it also significantly increased the percent crosslinking of UHMWPE in AR and V77.

• Cartoon and Animation Studies
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• s.33
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• pp.503-529
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• 2013

The commemorative AR postage stamps which are the world first presented at The YEOSU EXPO 2012 has had meaning of communicating with future in this present from a convergence that the most analog medium is using now and that the AR is cutting edge of digital technology. The AR stamps printed 10 kind out of 33 commemorative stamps. These have great significance that is artistic value than that is world first. The applied AR images are not only expressed 3D real images but also artic represented and signifying each stamp images from visualized creativity process, and build 'new art space' that is new concept between on real(analog) and virtual(digital). This study analyzes meaning of images and then makes concept of AR contents design. The processing is designed and considered the meaning of architectures and environments, and the regional specific feature of the Yeosu with surrealistic graphic concept. The 10 of deducted images were expressed after AR coding such as visual arts. This study realized markerless 3D image tracking AR stamps and deducted research result are; the first, it was able to figure out how to realize AR in the process of registering the reference images, coordinating transformation, and hybriding AR on the stamps for the mobile devices. The second, it was able to be seeked a possibility of new virtual exhibition space. The third, it was able to know possibility of satisfaction of immersing with visual formativeness and usability with informativity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.175-175
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• 2010

The etching characteristics with etch rate of ITO thin films in an $O_2/BCl_3$/Ar plasma were investigated. The etch rate of ITO thin films increased with increasing $O_2$ content from 0 to 10 % in $BCl_3$/Ar plasma, whereas that of ITO decreased with increasing $O_2$ content from 10 % to 30 % in $BCl_3$/Ar plasma. The maximum etch rate of 65.9 nm/min for the ITO thin films was obtained at 10 % $O_2$ addition. The etch conditions were the RF power of 500 W, bias power of 200 W, and process pressure of 2 Pa. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of ITO thin films and etch species.