• Transactions on Electrical and Electronic Materials
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• v.9 no.2
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• pp.52-56
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• 2008

Carbon nanotube films were fabricated by the catalytic CVD method. Plasma processed time effects on the field emission property were studied. The atomic structure was observed by using X-ray photoelectron spectroscopy (XPS). The surface composition changes were observed on the plasma processed CNT films. The O1s/C1s signal ratio and the Fls/Cls signal ratio changed from 1.1 % to 24.65 % and from 0 % to 3.1 % with plasma process time, respectively. We could guess it from these results that the Ar plasma process could change the surface composition effectively. In the case of the original-CNT film, no carbon shift was observed. In the case of the Ar plasma processed CNT films, however the oxygen related carbon shifts were observed. This oxygen related carbon shift at higher binding energy implies the increment of amount of the oxygen. It's possible that the increment of these bonds between carbon and oxygen results in the improvement of field emission performance.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.32-36
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• 2014

In this study, the etching characteristics of titanium dioxide ($TiO_2$) thin films were investigated with the addition of $N_2$ to CF4/Ar plasma. The crystal structure of the $TiO_2$ was amorphous. A maximum etch rate of 111.7 nm/min and selectivity of 0.37 were obtained in an $N_2/CF_4/Ar$ (= 6:16:4 sccm) gas mixture. The RF power was maintained at 700 W, the DC-bias voltage was - 150 V, and the process pressure was 2 Pa. In addition, the etch rate was measured as functions of the etching parameters, such as the gas mixture, RF power, DC-bias voltage, and process pressure. We used X-ray photoelectron spectroscopy to investigate the chemical state on the surface of the etched $TiO_2$ thin films. To determine the re-deposition and reorganization of residues on the surface, atomic force microscopy was used to examine the surface morphology and roughness of $TiO_2$ thin films.

• Journal of Digital Convergence
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• v.16 no.9
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• pp.413-419
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• 2018

Nowadays, smart phone became an important part of communication media and integrated into people's life. If callers rely on helmet-mounted display(HMD) augmented reality technique to add two-way user's facial expression, appearance, actions during the calling process, it will let callers have a visualized fantastic sensual experience. And through that method can break the limitations of vision, so research that technical problem can promote the development of visual arts, that is meaningful. This paper will choose and composite several existed technologies to set up two hypothesis, try to realize AR video calling. Through comparison and analysis to find those two hypothesis' problem, and create design solutions to solve problems. And use case study method to present two cases for prove my paper's result that is those two hypothesis can be realize in future. Use those technologies can bring more convenience and enjoyment to people's life. It can be predicted that AR video calling process can be successfully realized and will have unlimited development in future.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.438-444
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• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

• The Korea Journal of Herbology
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• v.31 no.3
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• pp.13-22
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• 2016

Objectives： Arachidonic acid is control the thromboxane A2 (TXA2) and prostacycline (PGI2) synthesis, TXA2 increase lead to thrombus produced by induces platelet aggregation and vasoconstriction. Angelicae gigantis radix (RAR) is mainly used blood deficiency and stagnation. In previous studies, RAR has been reported that a vasodilating and blood clotting delay effects. In this study, investigate that anti-oxidant and anti-thrombotic effects of RAR by heat-process.Methods： The heated angelicae gigantis radix sample were made by 140, 180, and 220 ℃ and 4, 6, 9 and 12 min using water or 30% ethanol. The anti-oxidant effects were measured by total polyphenol, total flavonoid, DPPH and ABTS radical scavening activation. Anti-thrombotic effect conducted in samples that are determined to be effective through the anti-oxidant experiment such as angelicae gigantis radix roasted 180℃, and 220℃ and angelicae gigantis radix roasted with 30% ethanol 180℃, and 220℃.Results： Anti-oxidant parameters were efficacious in high temperature roasted AR. Also AR and EAR increased a inhibitory activity of FXa compared with RAR. The blood coagulation time of administration groups were significantly increased compare with control group. The TXB2 was significantly decreased in AR and EAR.Conclusions : We confirmed that whether AR and EAR administration has anti-oxidant and anti-thrombotic effect or not. As the results, AR and EAR were improved anti-oxidant effects and blood biochemistry compare with control group. This study provides scientific evidence that AR and EAR are have an anti-oxidant effect and anti-thrombotic effect, it expected that there is no difference between the two.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.77-77
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• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

• Spatial Information Research
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• v.22 no.2
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• pp.1-9
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• 2014

UN-REDD (United Nations programme on Reducing Emissions from Deforestation and forest Degradation in Developing Countries) and AR-CDM (Afforestation/Reforestation-Clean Development Mechanism) is currently being emerged as one of important mechanism to reduce carbon dioxide in relation to the deforestation. Discussion on North Korea as UN-REDD/AR-CDM project target continues with a view to preventing deforestation and to securing CER(certified emission reduction) for South Korea. The forests in Mt. Baekdu are degraded, deforestation is occurred, nevertheless, portion of forested area is still high, where both REDD and AR-CDM investment potential are quite high. Accordingly, this study is intended to explore a simultaneous registration potential to UNREDD/AR-CDM for Mt. Baekdu although separate registration to UN-REDD or AR-CDM has already gained worldwide recognition as a typical method in the process of GHG (Greenhouse Gas) reduction project. The results indicate that selecting UN-REDD or AR-CDM in accordance with sub-watershed forest condition could capture 53.2% more carbon dioxide than REDD alone and 21.9% more than AR-CDM alone. It is anticipated that this research output could be used as a realistic evidence to introduce carbon sequestering project in accordance with sub-watershed forest condition.

• Korean Journal of Construction Engineering and Management
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• v.18 no.2
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• pp.21-29
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• 2017

Recently, with having a great interest of the general public for the AR (Augmented Reality) technology, there have been lots of study to improve efficiency of a construction equipment with applying the AR technology to a construction equipment. The clear extrinsic calibration is essential to applying AR technology at the construction site without any error which came from superimposition between 'Real world' and 'Virtual world'. However, on the construction site, the clear extrinsic calibration is not possible, because of lack of time and budget for the specific survey, also, the huge error of the outdoor tracking system such as gyro, GPS system and so on. In this study, we do research about seamless superposition with unclear extrinsic calibration and the image process method for making AR navigator operating in the excavator. Based on this study, we figure that we can fully develop the AR navigator for the excavator. Furthermore, thereby operating AR navigator at many construction sites, we expect that the efficiency of the excavator will be improved. In addition, we can develop AR navigator for not only a excavator but all about construction equipment.

• Progress in Superconductivity
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• v.14 no.2
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• pp.116-121
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• 2012

Effect of mixed gas and additional Mg powder in an annealing process of the $MgB_2$ is investigated. Four different type of samples were prepared, each in different annealing environment of Ar, $Ar+4%H_2$, Ar with Mg powder and $Ar+4%H_2$ with Mg powder. Different annealing environment did not affect the electron-phonon interaction which is reflected from the same superconducting transition of 36.6 K for all samples. The reducing effect of hydrogen is clearly depicted from the presence of excess Mg in sample synthesized in $Ar+4%H_2$ gas implying the reduced rate of reaction between Mg and B. This has manifested itself in terms of slightly increased high-field critical current density of the sample. In contrast, the sample synthesized in $Ar+4%H_2$ with Mg powder, has shown overall enhancement in the superconducting properties as presented by higher diamagnetic saturation and critical current density.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.11-15
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• 2007

As preparing electrode for the OLED with the sputtering process, in order to be lower damage of the bottom organic layer and increase the life-time of the OLED, we prepared Al electrode for that by using Facing Targets Sputtering (FTS) system. Al electrode directly deposited on the cell (LiF/EML/HTL/Bottom electrode). Deposition condition was the working gas (Ar, Kr and Ar+Kr) and working gas pressure (1 and 6 mTorr). The film thickness and I-V curve of Al/cell were evaluated by a $\acute{a}$-step profiler and a semiconductor parameter (HP4156A) measurement. The thin film surface image was observed by a Atomic Force Microscope (AFM). In result, in comparison with about 11 [V] of the turn-on voltage of Al/cell with using the pure Ar gas, when Al thin film was deposited using the Ar-Kr mixture gas, the surface morphology was improved in some region and the turn-on voltage of Al/cell could be decreased to about 7 [V].