• Journal of the Speleological Society of Korea
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• no.82
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• pp.1-4
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• 2007

In this paper, the etching of Au films using photoresist masks on Si substrates was investigated using a capacitively coupled plasma etch reactor. The advantages of plasma etch techniques over current methods for Au metalization include the ability to simplify the metalization process flow with respect to resist lift-off schemes, and the ability to cleanly remove etched material without sidewall redeposition, as is seen in ion milling. The etch properties were measured for different gas mixing ratios of CF4/Ar, and chamber pressures while the other conditions were fixed. According to statistical design of experiment (DOE), etching process of Au films was characterized and also 20 samples were fabricated followed by measuring etch rate, selectivity and etch profile. There is a chemical reaction between CF4 and Au. Au- F is hard to remove from the surface because of its high melting point. The etching products can be sputtered by Ar ion bombardment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.66-66
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• 2006

Development of ArF Photo-lithography process has proceeded with the increase of numerical aperature (NA) and the decrease of resist thickness. It makes many problems such as cost and process complexity. A novel spin-on hard mask system is proposed to overcome many problems Spin-on hard mask composed of two layers of siloxane and carbon. The optical thickness of two layers is designed from reflectivity measurement at specified n, k respectively. The property of photo-resist shows different results according to Si contents. Si-contents was measured XPS(X-ray Photoelectron spectroscopy).

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.1001-1003
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• 1998

In this paper, $Ar^+$ ion laser etching process of single/poly crystalline silicon with $CCl_{2}F_{2}$ gas is studied for MEMS applications. To investigate the effects of process parameters, laser power, gas pressure, scanning speed were varied and multiple scanning was carried out to obtain high aspect ratio. In addition, scanning width was varied to observe the trench profile etched in repeating scanning cycle. From the etching of $2.6{\mu}m$ thick polycrystalline Si deposited on insulator, trench with flat bottom and vertical side wall was obtained and it is possible to apply this results for MEMS applications.

• Carbon letters
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• v.6 no.3
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• pp.173-180
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• 2005

In this study, AR (aromatic resin) pitch was employed as the matrix-precursor for carbon/carbon composite because it exhibits much higher coke yield than coal tar pitch. As a result, a fabrication process of carbon/carbon composites can be shortened. It has been known that the pitches may cause swolling problem during the carbonization process. In order to restrain the swelling occurrence, a small quantity of carbon black was added to the AR pitch. Due to addition of carbon black the swelling was decreased largely and the perform can be infiltrated with the AR pitch. The densification efficiency of the performs was compared with various matrix-precursors. The coke yield of matrixprecursors, the morphology and the degree of graphitization of carbon matrix were analyzed.

• Journal of Korean Society for Quality Management
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• v.35 no.2
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• pp.106-112
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• 2007

In statistical process control, it is assumed that the process data are independent. However, most of chemical processes such as semi-conduct processes do not satisfy the assumption because of presence of autocorrelation between process data. It causes abnormal out of control signal in the process control and misleading estimation in process capability. In this study, we adopted Shore's method to solve the problem and propose an optimal subgroup size to estimate the variance correctly for AR(1) processes. Especially, we focus on finding an actual subgroup size for small samples based on simulation study.

• Journal of the Korean Statistical Society
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• v.23 no.2
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• pp.483-498
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• 1994

Suppose that a stationary process ${X_t}$ has a marginal distribution whose support consists of sufficiently large integers. We are concerned with some analogous law of large numbers for such distribution function F. In particular, we determine a weak law of large numbers for maximum queueing length in $M/M\infty$ system. We also present a limiting behavior for the maxima based on AR(1) process with binomial thining and poisson marginals (INAR(1)) introduced by E. Mckenzie. It turns out that the result of AR(1) process is the same as that of $M/M/\infty$ queueing process in limit when we observe the queues at regularly spaced intervals of time.

• Journal of the Korean Data and Information Science Society
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• v.18 no.4
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• pp.963-972
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• 2007

When a control chart signals that a special cause is present, process engineers must initiate a search for and an identification of the special cause. Knowing the time of the process change could lead to identify the special cause more quickly, and to take the appropriate actions immediately to improve quality. In this paper, we propose the maximum likelihood estimator (MLE) for the process change point when a control chart is used in monitoring the parameters of a process in which the observations can be modeled as a first-order autoregressive(AR(1)) process plus an additional random error.

• Journal of the Korean Statistical Society
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• v.26 no.3
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• pp.407-416
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• 1997

Suppose that { $X_{i}$ } is a stationary AR(1) process and { $Y_{j}$ } is an ARX process with { $X_{i}$ } as exogeneous variables. Let $Y_{j}$ $^{*}$ be the stochastic process which is the sum of $Y_{j}$ and a nonstochastic trend. In this paper we consider the problem of estimating the conditional probability that $Y_{{n+1}}$$^{*}$ is bigger than $X_{{n+1}}$, given $X_{1}$, $Y_{1}$$^{*}$,..., $X_{n}$ , $Y_{n}$ $^{*}$. As an estimator for the tolerance probability, an Mann-Whitney statistic based on least squares residuars is suggested. It is shown that the deviations between the estimator and true probability are stochatically bounded with $n^{{-1}$2}/ order. The result may be applied to the stress-strength reliability theory when the stress and strength variables violate the classical iid assumption.umption.n.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.279-281
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• 1997

The properties of Platinum dry etching were investigated in MICP(Magnetized Inductively Coupled Plasma). The problem with Platinum etching is the redeposition of sputtered Platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned Platinum structure produce feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape.[1] Generally, $Cl_2$ plasma is used for the fence-free etching.[1][2][3] The main object of this study was to investigate a new process technology for the fence-free Pt etching. Platinum was etched with Ar plasma at the cryogenic temperature and with Ar/$SF_6$ plasma at room temperature. In cryogenic etching, the height of fence was reduced to 20% at $-190^{\circ}C$ compared with that of room temp., but the etch profile was not fence-free. In Ar/$SF_6$ Plasma, chemical reaction took part in etching process. The trend of properties of Ar/$SF_6$ Plasma etching is similar to that of $Cl_2$ Plasma etching. Fence-free etching was possible, but PR selectivity was very low. A new gas chemistry for fence-free Platinum etching was proposed in this study.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.415-415
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• 2012

ZnO nanostructures were synthesized by a vapor phase transport process in a single-zone furnace within a horizontal quartz tube with an inner diameter of 38 mm and a length of 485 mm. The ZnO nanostructures were grown on Au-catalyzed Si(100) substrates by using a mixture of zinc oxide and graphite powders. The growth of ZnO nanostructures was conducted at $800^{\circ}C$ for 30 min. High-purity Ar and $O_2$ gases were pushed through the quartz tube during the process at a flow rate of 100 and 10 sccm, respectively. The sequence of ON/OFF cycles of the Ar gas flow was repeated, while the $O_2$ flow is kept constant during the growth time. The Ar gas flow was ON for 1 min/cycle and that was OFF for 2 min/cycle. The structure and optical properties of the ZnO nanostructures were investigated by field-emission scanning electron microscope, X-ray diffraction, temperature-dependent photoluminescence. The preferred orientation of the ZnO nanostructures was along c-axis with hexagonal wurtzite structure.