• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.157-160
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• 2021

As an insulator for a thin film transistor(TFT) and an encapsulation material of organic light emitting diode(OLED), aluminum oxide (Al₂O₃) has been widely studied using several technologies. Especially, in spite of low deposition rate, atomic layer deposition (ALD) has been used as a process method of Al₂O₃ because of its low process temperature and self-limiting reaction. In the Al₂O₃ deposition by ALD method, Ar Purge had some crucial effects on the film properties. After reaction gas is injected as a formation of pulse, an inert argon(Ar) purge gas is injected for gas desorption. Therefore, the process parameter of Ar purge gas has an influence on the ALD deposited film quality. In this study, Al₂O₃ was deposited on glass substrate at a different Ar purge time and its structural characteristics were investigated and analyzed. From the results, the growth rate of Al₂O₃ was decreased as the Ar purge time increases. The surface roughness was also reduced with increasing Ar purge time. In order to obtain the high quality Al₂O₃ film, it was known that Ar purge times longer than 15 sec was necessary resulting in the self-limiting reaction.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.249-256
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• 1997

The effect of process parameter of plasma assisted chemical vapor deposition (PACVD) on the variation of the ratio between cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) in the film was in-vestigated. The plasma was generated by electric power with the frequency between 100 and 500 KHz. BCl3 and NH3 were used as a boron and nitrogen source respectively and Ar and hydrogen were added as a car-rier gas. Films were composed of h-BN and c-BN and its ratio varied with the magnitude of process parameters, voltage of the electric power, substrate bias voltage, reaction pressure, gas composition, sub-strate temperature. TEM observation showed that h-BN phase was amorphous while crystalline c-BN par-ticle was imbedded in h-BN matrix in the case of c-BN and h-BN mixed film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1005-1008
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• 2009

In this study, adaptively coupled plasma (ACP) source was used for dry etching of $Al_2O_3$ thin film. During the etching process, the wafer surface temperature is an important parameter to influent the etching characteristics. Therefore, the experiments were carried out in ACP to measuring the etch rate, the selectivities of $Al_2O_3$ thin film to mask materials and the etch profile as functions of $Cl_2$/Ar gas ratio and substrate temperature. The highest etch rate of $Al_2O_3$ was 65.4 nm/min at 75% of $Cl_2/(Cl_2+Ar)$ gas mixing ratio. The etched profile was characterized using field effect scanning electron microscopy (FE-SEM). The chemical states of $Al_2O_3$ thin film surfaces were investigated with x-ray photoelectron spectroscopy (XPS).

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.43-47
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• 1996

$RuO_2$ thin films deposited directly on Si substrate by RF magnetron sputtering method using $RuO_2$ target have been investigated. Special interest was focused on the effect of process parameter on the surface roughness of $RuO_2$ films. Crystallization behavior and electrical properties of the films deposited at $300^{\circ}C$ were superior to those deposited at room temperature. Metallic Ru phase was formed in pure Ar and this phase had resulted poor adhesion after post annealing process in oxidizing ambient. Microstructural analysis reveals that the size of the $RuO_2$ crystallites gets smaller and the surface becomes smoother as the $O_2$ partial pressure or film thickness decreases. Irrespective of the $O_2/Ar$ ratio, resistivity of $RuO_2$ films ranged in $50~70 {\mu}{\Omega}-cm$. As the film thickness decreases, there is a thickness where the resistivity rises abruptly. Such an onset thickness turned out to be dependent n the $O_2$/Ar ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1123-1126
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• 2003

In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56MHz was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar- I line, luminance were investigated. At this time the input parameter for ICP RF plama, Ar gas pressure and RF power were applied in the range of $10{\sim}60m$ Torr, $10{\sim}300W$ respectively.

• The Journal of the Acoustical Society of Korea
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• v.15 no.4
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• pp.50-57
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• 1996

In this paper, we proposed the method of optimal wavelet selection and wavelet expansion of AR(autoregressive) parameters by selected wavelet using F-test. A cost function is introduced as a wavelet selection method. Using this cost function, wavelets (D4 to D20) are tested to the synthesized signal. With this selected wavelet, we get the wavelet coefficients of AR parameters to both synthesized signal and real speech signal. To evaluate the proposed method, this wavelet based algorithm is compared with the Kalman filering algorithm. As a results, the proposed method shows a better performance by about 5-10dB than the Kalman filter.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1996.03a
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• pp.119-123
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• 1996

The demands for robotic and automatic system are continually increasing in manufacturing fields. There were so many studies to monitor and predict system, but it were mainly relied upon measuring of cutting force, current of motor spindle and using acoustic sensor, etc. In this study digital image of time series sequence was acquired taking advantage of optical technique. Then, mean square error was obtained from it and was available for useful observation data. The parameter was estimated using PAA(parameter adaptation algorithm) from observation data. AR model was selected for system model, fifth order was decided according to parameter estimation. Uncorrelation test was also carried out to verify convergence of parameter. Through the proceedings, we found there was a system stability.

• Journal of Physiology & Pathology in Korean Medicine
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• v.18 no.4
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• pp.1140-1146
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• 2004

This study was carried out to investigate the comparison of immunomodualtory effects of water-extracted Ginseng Radix(GR), Pilose Asia-bell(PA), Astragali Radix(AR), Astractylodes Rhizoma alba(AA) and Dioscoreae Rhizoma (DR). The parameter examined to assess apparent immunomodulatory effect of the water-extracted GR, PA, AR, AA and DR included the regulation of Nitric oxide (NO), the expression of Th1/Th2 type cytokine, the change of B cell phenotype. The water-extracted GR, PA, AR, AA and DR inhibited NO production and iNOS protein expression in LPS stimulated RAW 264.7 macrophage cells. In the Th1 and Th2 cytokine expression, the water-extracted GR, PA, AR, AA and DR induced IL-2 and IFNr mRNA gene expression. Therefore, it seems that the water-extracted GR, PA, AR, AA and DR have a inducing effect of Th1 type cytokines. In the Flow cytometry analysis, the water-extracted GR, PA, AR, AA and DR did not change B cell phenotype (CD45R/B220). The water-extracted GR, PA, AR, AA and DR have a reducing effect of immune suppression cause by Methotrexate (MTX), an agent of immune suppression. These results suggest that the immunomodulatory effects of the water-extracted GR, PA, AR, AA and DR may be, in part, associated with the inducing IL-2 and IFNr mRNA gene expression in and regulation of NO production in macrophage cells.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.2
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• pp.535-541
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• 2013

The present study was carried out to investigate the effects of welding parameters such as current, voltage and shielding gases on the bead shape, microstructures and hardness. It was confirmed that bead height was lowered and bead depth was increased with increasing voltages while height, depth and width of beads increased with welding currents. The hardness of weld metals with Ar+10% $O_2$ and Ar+20% $CO_2$ was low due to the formation of grain boundary and polygonal ferrites while that of weld metals with Ar+2% $O_2$ was high due to the presence of acicular, bainitic and sideplate ferrites.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.7 no.1
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• pp.69-74
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• 1998

In order to monitor the tool wear in milling operation, cutting force is measured as the tool wear increased. The digital signal processing methods are used to detect the tool wear . As AR parameter extract the feature of tool wear , it can be used as input parameter of pattern classifier. The FFT monitor the tool wear exactly , but it can not do real time signal processing. The band energy method can be used to real time monitoring of tool wear ,but int can degrade the exact monitoring.